页 8 - Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 单 | 黑森尔电子
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Diodes Incorporated 产品 - 晶体管 - FET，MOSFET - 单

记录 2,523
页  8/85
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Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
DMT10H015SK3-13
Diodes Incorporated

MOSFET N-CH 100V 54A TO252

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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MOSFET (Metal Oxide)
100 V
54A (Tc)
6V, 10V
4V @ 250µA
30.1 nC @ 10 V
2343 pF @ 50 V
±20V
-
1.8W (Ta), 4.2W (Tc)
14mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMN2055U-13
Diodes Incorporated

MOSFET N-CH 20V 4.8A SOT23 T&R 1

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 400 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 3.6A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存29,793
MOSFET (Metal Oxide)
20 V
4.8A (Ta)
2.5V, 4.5V
1V @ 250µA
4.3 nC @ 4.5 V
400 pF @ 10 V
±8V
-
800mW (Ta)
38mOhm @ 3.6A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMTH43M7LFGQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2182 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 65.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: POWERDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
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MOSFET (Metal Oxide)
40 V
100A (Tc)
5V, 10V
2.5V @ 250µA
30 nC @ 10 V
2182 pF @ 20 V
±20V
-
3.5W (Ta), 65.2W (Tc)
3mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
POWERDI3333-8
8-PowerVDFN
BSS138TA-79
Diodes Incorporated

MOSFET N-CH SOT23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
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-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMJ70H600HK3-13
Diodes Incorporated

MOSFET BVDSS: 651V~800V TO252 T&

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 700 V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 600mOhm @ 2.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
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MOSFET (Metal Oxide)
700 V
7.6A (Tc)
10V
5V @ 250µA
17.4 nC @ 10 V
570 pF @ 25 V
±30V
-
90W (Tc)
600mOhm @ 2.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMNH15H110SPS-13
Diodes Incorporated

MOSFET BVDSS: 101V~250V POWERDI5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150 V
  • Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 989 pF @ 75 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
150 V
27A (Tc)
6V, 10V
4V @ 250µA
25.5 nC @ 10 V
989 pF @ 75 V
±20V
-
1.5W (Ta)
90mOhm @ 2A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMN4060SVTQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V TSOT26 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 45 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1159 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 46mOhm @ 4.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
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MOSFET (Metal Oxide)
45 V
4.3A (Ta)
4.5V, 10V
3V @ 250µA
20 nC @ 10 V
1159 pF @ 25 V
±20V
-
1.2W (Ta)
46mOhm @ 4.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMTH6006SPS-13
Diodes Incorporated

MOSFET N-CH 60V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 17.8A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27.9 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.94W (Ta), 107W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.2mOhm @ 10.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
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MOSFET (Metal Oxide)
60 V
17.8A (Ta), 100A (Tc)
10V
4V @ 250µA
27.9 nC @ 10 V
1721 pF @ 30 V
±20V
-
2.94W (Ta), 107W (Tc)
6.2mOhm @ 10.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
DMP31D1UFB4-7B
Diodes Incorporated

MOSFET BVDSS: 8V~24V X2-DFN1006-

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 8 V
  • Input Capacitance (Ciss) (Max) @ Vds: 54 pF @ 15 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 500mW (Ta)
  • Rds On (Max) @ Id, Vgs: 1Ohm @ 400mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-DFN1006-3
  • Package / Case: 3-XFDFN
封装: -
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MOSFET (Metal Oxide)
30 V
900mA (Ta)
1.8V, 4.5V
1.1V @ 250µA
1.6 nC @ 8 V
54 pF @ 15 V
±8V
-
500mW (Ta)
1Ohm @ 400mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-DFN1006-3
3-XFDFN
DMT10H025SK3-13
Diodes Incorporated

MOSFET N-CH 100V 41.2A TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 41.2A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1544 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.4W (Ta)
  • Rds On (Max) @ Id, Vgs: 23mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存7,500
MOSFET (Metal Oxide)
100 V
41.2A (Tc)
6V, 10V
4V @ 250µA
21.4 nC @ 10 V
1544 pF @ 50 V
±20V
-
1.4W (Ta)
23mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMPH4026SFVWQ-7
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2064 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2W (Ta)
  • Rds On (Max) @ Id, Vgs: 25mOhm @ 3A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
9.3A (Ta), 52A (Tc)
4.5V, 10V
1.8V @ 250µA
45.8 nC @ 10 V
2064 pF @ 20 V
±20V
-
2W (Ta)
25mOhm @ 3A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMTH8003SPS-13
Diodes Incorporated

MOSFET N-CH 80V 100A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 124.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 8952 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.9W
  • Rds On (Max) @ Id, Vgs: 3.9mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
封装: -
库存36,285
MOSFET (Metal Oxide)
80 V
100A (Tc)
6V, 10V
4V @ 250µA
124.3 nC @ 10 V
8952 pF @ 40 V
±20V
-
2.9W
3.9mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
DMTH47M2SK3-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V TO252 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 897 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.5W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 7.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
62A (Tc)
10V
4V @ 250µA
12.1 nC @ 10 V
897 pF @ 20 V
±20V
-
3.5W (Ta), 50W (Tc)
7.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMP2100UQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 216 pF @ 15 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存9,000
MOSFET (Metal Oxide)
20 V
4.3A (Ta)
1.8V, 10V
1.4V @ 250µA
9.1 nC @ 4.5 V
216 pF @ 15 V
±10V
-
800mW (Ta)
38mOhm @ 3.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMT3009LFVWQ-7
Diodes Incorporated

MOSFET N-CH 30V 12A PWRDI3333

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 3.8V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 823 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.3W (Ta), 35.7W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 14.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI3333-8 (SWP) Type UX
  • Package / Case: 8-PowerVDFN
封装: -
库存3,870
MOSFET (Metal Oxide)
30 V
12A (Ta), 50A (Tc)
3.8V, 10V
3V @ 250µA
12 nC @ 10 V
823 pF @ 15 V
±20V
-
2.3W (Ta), 35.7W (Tc)
11mOhm @ 14.4A, 10V
-55°C ~ 150°C (TJ)
Surface Mount, Wettable Flank
PowerDI3333-8 (SWP) Type UX
8-PowerVDFN
DMP4011SK3-13
Diodes Incorporated

MOSFET P-CH 40V 14A/74A TO252

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2747 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta), 4.2W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存7,500
MOSFET (Metal Oxide)
40 V
14A (Ta), 74A (Tc)
4.5V, 10V
2.5V @ 250µA
52 nC @ 10 V
2747 pF @ 20 V
±20V
-
1.8W (Ta), 4.2W (Tc)
11mOhm @ 9.8A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
DMTH41M8SPS-13
Diodes Incorporated

MOSFET N-CH 40V 100A PWRDI5060-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79.5 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6968 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.03W
  • Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8 (Type K)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
100A (Tc)
10V
4V @ 250µA
79.5 nC @ 10 V
6968 pF @ 20 V
±20V
-
3.03W
1.8mOhm @ 30A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8 (Type K)
8-PowerTDFN
DMP2075UVT-13
Diodes Incorporated

MOSFET P-CH 20V 3.8A TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
Request a Quote
MOSFET (Metal Oxide)
20 V
3.8A (Ta)
2.5V, 4.5V
1V @ 250µA
8.8 nC @ 4.5 V
642 pF @ 10 V
±8V
-
1.2W (Ta)
75mOhm @ 4A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
DMP3165LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta)
  • Rds On (Max) @ Id, Vgs: 90mOhm @ 2.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
库存8,400
MOSFET (Metal Oxide)
30 V
3.3A (Ta)
4.5V, 10V
2.1V @ 250µA
2 nC @ 10 V
300 pF @ 10 V
±20V
-
800mW (Ta)
90mOhm @ 2.7A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP31D7LW-7
Diodes Incorporated

MOSFET BVDSS: 25V-30V SOT323

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 380mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-323
  • Package / Case: SC-70, SOT-323
封装: -
库存10,854
MOSFET (Metal Oxide)
30 V
380mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.36 nC @ 4.5 V
19 pF @ 15 V
±20V
-
290mW (Ta)
900mOhm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-323
SC-70, SOT-323
DMN2310UTQ-13
Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 950mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 290mW (Ta)
  • Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封装: -
Request a Quote
MOSFET (Metal Oxide)
20 V
1.2A (Ta)
1.8V, 4.5V
950mV @ 250µA
0.7 nC @ 4.5 V
38 pF @ 10 V
±8V
-
290mW (Ta)
240mOhm @ 300mA, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMPH4009SPSW-13
Diodes Incorporated

MOSFET BVDSS: 31V~40V POWERDI506

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 83.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 5697 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.6W (Ta), 143W (Tc)
  • Rds On (Max) @ Id, Vgs: 11mOhm @ 9.8A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
83.4A (Tc)
4.5V, 10V
2.5V @ 250µA
112 nC @ 10 V
5697 pF @ 20 V
±20V
-
4.6W (Ta), 143W (Tc)
11mOhm @ 9.8A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
DMT4011LSS-13
Diodes Incorporated

MOSFET N-CH 40V 10.8A 8SO

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 829 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.31W (Ta)
  • Rds On (Max) @ Id, Vgs: 11.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SOP
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
10.8A (Ta)
4.5V, 10V
2.4V @ 250µA
14.3 nC @ 10 V
829 pF @ 20 V
±20V
-
1.31W (Ta)
11.5mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SOP
8-SOIC (0.154", 3.90mm Width)
DMP1045UCB4-7
Diodes Incorporated

MOSFET P-CH 12V 2.6A X2-WLB0808

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 12 V
  • Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 6 V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 530mW
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: X2-WLB0808-4 (Type C)
  • Package / Case: 4-XFBGA, WLBGA
封装: -
Request a Quote
MOSFET (Metal Oxide)
12 V
2.6A (Ta)
1.8V, 4.5V
1V @ 250µA
6.1 nC @ 4.5 V
535 pF @ 6 V
±8V
-
530mW
50mOhm @ 2A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
X2-WLB0808-4 (Type C)
4-XFBGA, WLBGA
DMT10H9M9SSS-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V SO-8 T&R

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP3011SFVWQ-7
Diodes Incorporated

MOSFET P-CH 30V 11.5A PWRDI3333

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 980mW (Ta)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
封装: -
库存6,000
MOSFET (Metal Oxide)
30 V
19.8A (Ta), 50A (Tc)
4.5V, 10V
3V @ 250µA
46 nC @ 10 V
2380 pF @ 15 V
±25V
-
980mW (Ta)
10mOhm @ 11.5A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
DMN2025U-13
Diodes Incorporated

MOSFET BVDSS: 8V-24V SOT23 T&R 1

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMP31D7LQ-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT23 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 430mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23-3
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
580mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.36 nC @ 4.5 V
19 pF @ 15 V
±20V
-
430mW (Ta)
900mOhm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-3
TO-236-3, SC-59, SOT-23-3
DMP31D7LT-7
Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT523 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 15 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 260mW (Ta)
  • Rds On (Max) @ Id, Vgs: 900mOhm @ 420mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-523
  • Package / Case: SOT-523
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
360mA (Ta)
4.5V, 10V
2.6V @ 250µA
0.36 nC @ 4.5 V
19 pF @ 15 V
±20V
-
260mW (Ta)
900mOhm @ 420mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-523
SOT-523
DMP3068LVT-13
Diodes Incorporated

MOSFET P-CH 30V 2.8A TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
  • Vgs(th) (Max) @ Id: 1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 708 pF @ 15 V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 1.25W (Ta)
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 4.2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
Request a Quote
MOSFET (Metal Oxide)
30 V
2.8A (Ta)
2.5V, 10V
1.3V @ 250µA
7.3 nC @ 4.5 V
708 pF @ 15 V
±12V
-
1.25W (Ta)
75mOhm @ 4.2A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6