页 105 - 晶体管 - FET,MOSFET - 阵列 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET,MOSFET - 阵列

记录 3,259
页  105/109
图片
零件编号
制造商
描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
AUIRF7313Q
Infineon Technologies

MOSFET 2N-CH 30V 6.5A 8SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 6.9A
  • Rds On (Max) @ Id, Vgs: 29 mOhm @ 6.9A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 755pF @ 25V
  • Power - Max: 2.4W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC
  • Supplier Device Package: 8-SO
封装: 8-SOIC
库存6,384
Logic Level Gate
30V
6.9A
29 mOhm @ 6.9A, 10V
3V @ 250µA
33nC @ 10V
755pF @ 25V
2.4W
-55°C ~ 175°C (TJ)
Surface Mount
8-SOIC
8-SO
hot IPG20N06S3L-35
Infineon Technologies

MOSFET 2N-CH 55V 20A TDSON-8

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 11A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 15µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
  • Power - Max: 30W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-4
封装: 8-PowerVDFN
库存37,920
Logic Level Gate
55V
20A
35 mOhm @ 11A, 10V
2.2V @ 15µA
23nC @ 10V
1730pF @ 25V
30W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-4
hot IRF7751
Infineon Technologies

MOSFET 2P-CH 30V 4.5A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1464pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存34,716
Logic Level Gate
30V
4.5A
35 mOhm @ 4.5A, 10V
2.5V @ 250µA
44nC @ 10V
1464pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IRF7752
Infineon Technologies

MOSFET 2N-CH 30V 4.6A 8-TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存2,480
Logic Level Gate
30V
4.6A
30 mOhm @ 4.6A, 10V
2V @ 250µA
9nC @ 4.5V
861pF @ 25V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI6966DQ-T1-GE3
Vishay Siliconix

MOSFET 2N-CH 20V 4A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存390,384
Logic Level Gate
20V
4A
30 mOhm @ 4.5A, 4.5V
1.4V @ 250µA
20nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
hot SI5947DU-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 20V 6A PPAK CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A
  • Rds On (Max) @ Id, Vgs: 58 mOhm @ 3.6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
  • Power - Max: 10.4W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? ChipFET? Dual
  • Supplier Device Package: PowerPAK? ChipFet Dual
封装: PowerPAK? ChipFET? Dual
库存470,784
Logic Level Gate
20V
6A
58 mOhm @ 3.6A, 4.5V
1.5V @ 250µA
17nC @ 10V
480pF @ 10V
10.4W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? ChipFET? Dual
PowerPAK? ChipFet Dual
hot CSD75205W1015
Texas Instruments

MOSFET 2P-CH 20V 1.2A 6DSBGA

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.2A
  • Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 850mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 265pF @ 10V
  • Power - Max: 750mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UFBGA, DSBGA
  • Supplier Device Package: 6-DSBGA (1x1.5)
封装: 6-UFBGA, DSBGA
库存17,808
Logic Level Gate
20V
1.2A
120 mOhm @ 1A, 4.5V
850mV @ 250µA
2.2nC @ 4.5V
265pF @ 10V
750mW
-55°C ~ 150°C (TJ)
Surface Mount
6-UFBGA, DSBGA
6-DSBGA (1x1.5)
GWM120-0075P3
IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 118A
  • Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: ISOPLUS-DIL?
  • Supplier Device Package: ISOPLUS-DIL?
封装: ISOPLUS-DIL?
库存5,376
Standard
75V
118A
5.5 mOhm @ 60A, 10V
4V @ 1mA
100nC @ 10V
-
-
-55°C ~ 175°C (TJ)
Surface Mount
ISOPLUS-DIL?
ISOPLUS-DIL?
2N7002VA-7-F
Diodes Incorporated

MOSFET 2N-CH 60V 0.28A SOT-563

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 280mA
  • Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
  • Power - Max: 150mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存4,848
Standard
60V
280mA
7.5 Ohm @ 50mA, 5V
2.5V @ 250µA
-
50pF @ 25V
150mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
hot FDW2520C
Fairchild/ON Semiconductor

MOSFET N/P-CH 20V 6A/4.4A 8TSSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6A, 4.4A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1325pF @ 10V
  • Power - Max: 600mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存14,760
Logic Level Gate
20V
6A, 4.4A
18 mOhm @ 6A, 4.5V
1.5V @ 250µA
20nC @ 4.5V
1325pF @ 10V
600mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
IPG16N10S4L61AATMA1
Infineon Technologies

MOSFET 2N-CH 8TDSON

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 16A
  • Rds On (Max) @ Id, Vgs: 61 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 845pF @ 25V
  • Power - Max: 29W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-10
封装: 8-PowerVDFN
库存3,104
Logic Level Gate
100V
16A
61 mOhm @ 16A, 10V
2.1V @ 90µA
11nC @ 10V
845pF @ 25V
29W
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-10
APTC80A10SCTG
Microsemi Corporation

MOSFET 2N-CH 800V 42A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 42A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 273nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6761pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存3,040
Standard
800V
42A
100 mOhm @ 21A, 10V
3.9V @ 3mA
273nC @ 10V
6761pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTC60HM70BT3G
Microsemi Corporation

MOSFET 4N-CH 600V 39A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存4,304
Logic Level Gate
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
700pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
TPC8223-H,LQ(S
Toshiba Semiconductor and Storage

MOSFET 2N-CH 30V 9A 8SOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9A
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 4.5A, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1190pF @ 10V
  • Power - Max: 450mW
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,968
Logic Level Gate
30V
9A
17 mOhm @ 4.5A, 10V
2.3V @ 100µA
17nC @ 10V
1190pF @ 10V
450mW
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
ECH8661-TL-H
ON Semiconductor

MOSFET N/P-CH 30V 7A/5.5A ECH8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 7A, 5.5A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: 11.8nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 10V
  • Power - Max: 1.5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 8-ECH
封装: 8-SMD, Flat Lead
库存6,976
Logic Level Gate
30V
7A, 5.5A
24 mOhm @ 3.5A, 10V
-
11.8nC @ 10V
710pF @ 10V
1.5W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
8-ECH
SIA915DJ-T1-GE3
Vishay Siliconix

MOSFET 2P-CH 30V 4.5A SC-70-6L

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 87 mOhm @ 2.9A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 275pF @ 15V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封装: PowerPAK? SC-70-6 Dual
库存4,080
Logic Level Gate
30V
4.5A
87 mOhm @ 2.9A, 10V
2.2V @ 250µA
9nC @ 10V
275pF @ 15V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
NTLUD4C26NTAG
ON Semiconductor

MOSFET 2N-CH 30V 9.1A 6UDFN

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 460pF @ 15V
  • Power - Max: 2.63W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-UDFN Exposed Pad
  • Supplier Device Package: 6-UDFN (2x2)
封装: 6-UDFN Exposed Pad
库存6,016
Standard
30V
9.1A (Ta)
21 mOhm @ 6A, 10V
1.1V @ 250µA
9nC @ 4.5V
460pF @ 15V
2.63W
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN Exposed Pad
6-UDFN (2x2)
hot AO9926B
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 7.6A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 7.6A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 1.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 15V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存1,699,848
Logic Level Gate
20V
7.6A
23 mOhm @ 7.6A, 10V
1.1V @ 250µA
12.5nC @ 10V
630pF @ 15V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
DMG1026UVQ-7
Diodes Incorporated

MOSFET BVDSS: 41V 60V SOT563 T&R

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 440mA (Ta)
  • Rds On (Max) @ Id, Vgs: 1.8 Ohm @ 500mA, 10V
  • Vgs(th) (Max) @ Id: 1.8V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.45pC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 32pF @ 25V
  • Power - Max: 650mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存3,856
Logic Level Gate
60V
440mA (Ta)
1.8 Ohm @ 500mA, 10V
1.8V @ 250µA
0.45pC @ 4.5V
32pF @ 25V
650mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
BSS138DWQ-13
Diodes Incorporated

MOSFET 2NCH 50V 200MA SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 200mA
  • Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 220mA, 10V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
  • Power - Max: 200mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存4,992
Standard
50V
200mA
3.5 Ohm @ 220mA, 10V
1.5V @ 250µA
-
50pF @ 10V
200mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
VEC2616-TL-W
ON Semiconductor

MOSFET N/P-CH 60V 3A/2.5A VEC8

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate, 4V Drive
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
  • Rds On (Max) @ Id, Vgs: 80 mOhm @ 1.5A, 10V
  • Vgs(th) (Max) @ Id: 2.6V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
  • Power - Max: 1W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: SOT-28FL/VEC8
封装: 8-SMD, Flat Lead
库存6,832
Logic Level Gate, 4V Drive
60V
3A, 2.5A
80 mOhm @ 1.5A, 10V
2.6V @ 1mA
10nC @ 10V
505pF @ 20V
1W
150°C (TJ)
Surface Mount
8-SMD, Flat Lead
SOT-28FL/VEC8
BUK9K18-40E,115
Nexperia USA Inc.

MOSFET 2N-CH 40V 30A LFPAK56D

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 30A
  • Rds On (Max) @ Id, Vgs: 16 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.1V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1061pF @ 25V
  • Power - Max: 38W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: LFPAK56D
封装: SOT-1205, 8-LFPAK56
库存7,312
Logic Level Gate
40V
30A
16 mOhm @ 10A, 10V
2.1V @ 1mA
14.5nC @ 10V
1061pF @ 25V
38W
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
LFPAK56D
hot SI3585DV-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 20V 2A 6-TSOP

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 2A, 1.5A
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
  • Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 3.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: 6-TSOP
封装: SOT-23-6 Thin, TSOT-23-6
库存658,140
Logic Level Gate
20V
2A, 1.5A
125 mOhm @ 2.4A, 4.5V
600mV @ 250µA (Min)
3.2nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23-6 Thin, TSOT-23-6
6-TSOP
BSM180D12P3C007
Rohm Semiconductor

SIC POWER MODULE

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: 5.6V @ 50mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 880W
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存4,144
Standard
1200V (1.2kV)
-
-
5.6V @ 50mA
-
900pF @ 10V
880W
175°C (TJ)
Surface Mount
Module
Module
STL40C30H3LL
STMicroelectronics

MOSFET N/P-CH 30V POWERFLAT

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 40A, 30A
  • Rds On (Max) @ Id, Vgs: 21 mOhm @ 4A, 10V
  • Vgs(th) (Max) @ Id: 1V @ 250µA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 24V
  • Power - Max: 60W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
封装: 8-PowerVDFN
库存5,008
Logic Level Gate
30V
40A, 30A
21 mOhm @ 4A, 10V
1V @ 250µA (Min)
4.6nC @ 4.5V
475pF @ 24V
60W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
SI4554DY-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 40V 8A 8SO

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 8A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 6.8A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 20V
  • Power - Max: 3.1W, 3.2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存7,200
Logic Level Gate
40V
8A
24 mOhm @ 6.8A, 10V
2.2V @ 250µA
20nC @ 10V
690pF @ 20V
3.1W, 3.2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
SLA5068-LF830
Sanken

MOSFET 6N-CH 60V 7A 15-SIP

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 7A
  • Rds On (Max) @ Id, Vgs: 100 mOhm @ 3.5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 10V
  • Power - Max: 5W
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 15-SIP, Exposed Tab, Formed Leads
  • Supplier Device Package: 15-SIP
封装: 15-SIP, Exposed Tab, Formed Leads
库存14,868
Standard
60V
7A
100 mOhm @ 3.5A, 10V
2V @ 250µA
-
660pF @ 10V
5W
150°C (TJ)
Through Hole
15-SIP, Exposed Tab, Formed Leads
15-SIP
hot FDS4501H
Fairchild/ON Semiconductor

MOSFET N/P-CH 30V/20V 8SOIC

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V, 20V
  • Current - Continuous Drain (Id) @ 25°C: 9.3A, 5.6A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 9.3A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1958pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存512,832
Logic Level Gate
30V, 20V
9.3A, 5.6A
18 mOhm @ 9.3A, 10V
3V @ 250µA
27nC @ 4.5V
1958pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot FDMA3028N
Fairchild/ON Semiconductor

MOSFET 2N-CH 30V 3.8A 6MICROFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 3.8A
  • Rds On (Max) @ Id, Vgs: 68 mOhm @ 3.8A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 375pF @ 15V
  • Power - Max: 700mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-MicroFET (2x2)
封装: 6-VDFN Exposed Pad
库存435,192
Logic Level Gate
30V
3.8A
68 mOhm @ 3.8A, 4.5V
1.5V @ 250µA
5.2nC @ 5V
375pF @ 15V
700mW
-55°C ~ 150°C (TJ)
Surface Mount
6-VDFN Exposed Pad
6-MicroFET (2x2)
hot SI6926ADQ-T1-E3
Vishay Siliconix

MOSFET 2N-CH 20V 4.1A 8TSSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 4.1A
  • Rds On (Max) @ Id, Vgs: 30 mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 830mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存7,280
Logic Level Gate
20V
4.1A
30 mOhm @ 4.5A, 4.5V
1V @ 250µA
10.5nC @ 4.5V
-
830mW
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP