页 102 - 晶体管 - FET,MOSFET - 射频 | 分立半导体产品 | 黑森尔电子
联系我们
SalesDept@heisener.com +86-755-83210559 ext. 887
Language Translation

* Please refer to the English Version as our Official Version.

晶体管 - FET,MOSFET - 射频

记录 3,855
页  102/138
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFA191001EV4R250XTMA1
Infineon Technologies

IC FET RF LDMOS 100W H-36248-2

  • Transistor Type: LDMOS
  • Frequency: 1.96GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 44dBm
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36248-2
封装: 2-Flatpack, Fin Leads
库存5,024
1.96GHz
17dB
30V
10µA
-
900mA
44dBm
65V
2-Flatpack, Fin Leads
H-36248-2
BF1005SE6433XT
Infineon Technologies

MOSFET N-CH 8V 25MA SOT-143

  • Transistor Type: N-Channel
  • Frequency: 800MHz
  • Gain: 22dB
  • Voltage - Test: 5V
  • Current Rating: 25mA
  • Noise Figure: 1.6dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 8V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封装: TO-253-4, TO-253AA
库存2,592
800MHz
22dB
5V
25mA
1.6dB
-
-
8V
TO-253-4, TO-253AA
PG-SOT143-4
BLF8G22LS-310AVU
NXP

IC TRANS LDMOS 140W ACC-8L

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,800
-
-
-
-
-
-
-
-
-
-
MAGX-000040-00500P
M/A-Com Technology Solutions

FET RF 65V 4GHZ SOT-89

  • Transistor Type: HEMT
  • Frequency: 4GHz
  • Gain: 15.6dB
  • Voltage - Test: 50V
  • Current Rating: 300mA
  • Noise Figure: -
  • Current - Test: 17mA
  • Power - Output: 5W
  • Voltage - Rated: 65V
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: TO-243AA
库存4,768
4GHz
15.6dB
50V
300mA
-
17mA
5W
65V
TO-243AA
SOT-89
BLF7G22L-250P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18.5DB SOT539A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.5dB
  • Voltage - Test: 28V
  • Current Rating: 65A
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 70W
  • Voltage - Rated: 65V
  • Package / Case: SOT539A
  • Supplier Device Package: SOT539A
封装: SOT539A
库存3,776
2.11GHz ~ 2.17GHz
18.5dB
28V
65A
-
1.9A
70W
65V
SOT539A
SOT539A
BLF6G20-180RN,112
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT502A

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 17.2dB
  • Voltage - Test: 30V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502A
  • Supplier Device Package: LDMOST
封装: SOT-502A
库存3,664
1.93GHz ~ 1.99GHz
17.2dB
30V
49A
-
1.4A
40W
65V
SOT-502A
LDMOST
PD55008
STMicroelectronics

FET RF 40V 500MHZ POWERFLAT

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 4A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
封装: PowerSO-10 Exposed Bottom Pad
库存6,832
500MHz
17dB
12.5V
4A
-
150mA
8W
40V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MRF21085LSR3
NXP

FET RF 65V 2.17GHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.6dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1A
  • Power - Output: 19W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存7,264
2.11GHz ~ 2.17GHz
13.6dB
28V
-
-
1A
19W
65V
NI-780S
NI-780S
MRF6S9160HR3
NXP

FET RF 68V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 20.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 35W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封装: NI-780
库存2,576
880MHz
20.9dB
28V
-
-
1.2A
35W
68V
NI-780
NI-780
MRF6S9130HR5
NXP

FET RF 68V 880MHZ NI-780

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 950mA
  • Power - Output: 27W
  • Voltage - Rated: 68V
  • Package / Case: NI-780
  • Supplier Device Package: NI-780
封装: NI-780
库存5,088
880MHz
19.2dB
28V
-
-
950mA
27W
68V
NI-780
NI-780
MRF5S21130HSR5
NXP

FET RF 65V 2.17GHZ NI-880S

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 13.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: NI-880S
  • Supplier Device Package: NI-880S
封装: NI-880S
库存3,536
2.11GHz ~ 2.17GHz
13.5dB
28V
-
-
1.2A
28W
65V
NI-880S
NI-880S
PTFA211801EV5R250XTMA1
Infineon Technologies

FET RF 65V 2.14GHZ H36260-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 15.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.2A
  • Power - Output: 140W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36260-2
封装: 2-Flatpack, Fin Leads
库存4,080
2.14GHz
15.5dB
28V
-
-
1.2A
140W
65V
2-Flatpack, Fin Leads
H-36260-2
PTVA030121EAV1R0XTMA1
Infineon Technologies

IC AMP RF LDMOS H-36265-2

  • Transistor Type: LDMOS
  • Frequency: 390MHz ~ 450MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 12W
  • Voltage - Rated: 105V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-36265-2
封装: 2-Flatpack, Fin Leads
库存7,856
390MHz ~ 450MHz
25dB
50V
-
-
50mA
12W
105V
2-Flatpack, Fin Leads
H-36265-2
BLS6G2731P-200,117
Ampleon USA Inc.

RF FET LDMOS 32V SOM038

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: -
  • Voltage - Rated: 32V
  • Package / Case: SOM038
  • Supplier Device Package: LDMOST
封装: SOM038
库存6,832
-
-
32V
-
-
100mA
-
32V
SOM038
LDMOST
MRF6P24190HR6
NXP

FET RF 68V 2.39GHZ NI-1230

  • Transistor Type: LDMOS
  • Frequency: 2.39GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.9A
  • Power - Output: 40W
  • Voltage - Rated: 68V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
封装: NI-1230
库存7,552
2.39GHz
14dB
28V
-
-
1.9A
40W
68V
NI-1230
NI-1230
AFT21S140W02GSR3
NXP

FET RF 65V 2.14GHZ NI-780S-2

  • Transistor Type: LDMOS
  • Frequency: 2.14GHz
  • Gain: 19.3dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 800mA
  • Power - Output: 32W
  • Voltage - Rated: 65V
  • Package / Case: NI-780GS-2
  • Supplier Device Package: NI-780GS-2
封装: NI-780GS-2
库存6,672
2.14GHz
19.3dB
28V
-
-
800mA
32W
65V
NI-780GS-2
NI-780GS-2
BLF8G27LS-150VJ
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1244B

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz ~ 2.7GHz
  • Gain: 18dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.3A
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1244B
  • Supplier Device Package: CDFM6
封装: SOT-1244B
库存6,512
2.6GHz ~ 2.7GHz
18dB
28V
-
-
1.3A
45W
65V
SOT-1244B
CDFM6
BLM8D1822S-50PBGY
Ampleon USA Inc.

BLM8D1822S-50PBG/SOT1212/REELD

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,016
-
-
-
-
-
-
-
-
-
-
PD55035STR-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 16.9dB
  • Voltage - Test: 12.5V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 35W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
封装: PowerSO-10 Exposed Bottom Pad
库存2,288
500MHz
16.9dB
12.5V
7A
-
200mA
35W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
BLC8G27LS-140AVY
Ampleon USA Inc.

RF FET LDMOS 65V 14.5DB SOT12751

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 14.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 320mA
  • Power - Output: 28W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-1
  • Supplier Device Package: 6-DFM
封装: SOT1275-1
库存2,320
2.5GHz ~ 2.69GHz
14.5dB
28V
-
-
320mA
28W
65V
SOT1275-1
6-DFM
PD54008-E
STMicroelectronics

FET RF 25V 500MHZ PWRSO10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 11.5dB
  • Voltage - Test: 7.5V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 8W
  • Voltage - Rated: 25V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: 10-PowerSO
封装: PowerSO-10 Exposed Bottom Pad
库存18,804
500MHz
11.5dB
7.5V
5A
-
150mA
8W
25V
PowerSO-10 Exposed Bottom Pad
10-PowerSO
MMRF2010NR1
NXP

TRANS RF LDMOS 250W 50V

  • Transistor Type: LDMOS
  • Frequency: 1.09GHz
  • Gain: 32.1dB
  • Voltage - Test: 50V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 80mA
  • Power - Output: 250W
  • Voltage - Rated: 100V
  • Package / Case: TO-270-14 Variant, Flat Leads
  • Supplier Device Package: TO-270 WB-14 GULL
封装: TO-270-14 Variant, Flat Leads
库存15,324
1.09GHz
32.1dB
50V
10µA
-
80mA
250W
100V
TO-270-14 Variant, Flat Leads
TO-270 WB-14 GULL
PD85025TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 17.3dB
  • Voltage - Test: 13.6V
  • Current Rating: 7A
  • Noise Figure: -
  • Current - Test: 300mA
  • Power - Output: 10W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存15,768
870MHz
17.3dB
13.6V
7A
-
300mA
10W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
BLP27M810Z
Ampleon USA Inc.

RF FET LDMOS 65V 17DB 16VDFN

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.14GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 110mA
  • Power - Output: 2W
  • Voltage - Rated: 65V
  • Package / Case: 16-VDFN Exposed Pad
  • Supplier Device Package: 16-HVSON (4x6)
封装: 16-VDFN Exposed Pad
库存16,824
2.14GHz
17dB
28V
-
-
110mA
2W
65V
16-VDFN Exposed Pad
16-HVSON (4x6)
RFM01U7P-TE12L-F
Toshiba Semiconductor and Storage

RF MOSFET 7.2V PW-MINI

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 520MHz
  • Gain: 10.8dB
  • Voltage - Test: 7.2 V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 1.2W
  • Voltage - Rated: 20 V
  • Package / Case: TO-243AA
  • Supplier Device Package: PW-MINI
封装: -
Request a Quote
520MHz
10.8dB
7.2 V
1A
-
100 mA
1.2W
20 V
TO-243AA
PW-MINI
MRF18060BLSR3
Freescale Semiconductor

RF MOSFET 26V NI780

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 1.93GHz ~ 1.99GHz
  • Gain: 13dB
  • Voltage - Test: 26 V
  • Current Rating: 6µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 60W
  • Voltage - Rated: 65 V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: -
Request a Quote
1.93GHz ~ 1.99GHz
13dB
26 V
6µA
-
500 mA
60W
65 V
NI-780S
NI-780S
ST50V10100
STMicroelectronics

RF MOSFET LDMOS M243

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 100W
  • Voltage - Rated: 110 V
  • Package / Case: M243
  • Supplier Device Package: M243
封装: -
Request a Quote
-
18dB
-
18A
-
-
100W
110 V
M243
M243
PXAE183708NB-V1-R2
MACOM Technology Solutions

RF MOSFET LDMOS 28V 8HB2SOF

  • Transistor Type: LDMOS
  • Frequency: 1.805GHz ~ 1.88GHz
  • Gain: 16dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 800 mA
  • Power - Output: 320W
  • Voltage - Rated: 65 V
  • Package / Case: PG-HB2SOF-8-1
  • Supplier Device Package: PG-HB2SOF-8-1
封装: -
Request a Quote
1.805GHz ~ 1.88GHz
16dB
28 V
10µA
-
800 mA
320W
65 V
PG-HB2SOF-8-1
PG-HB2SOF-8-1