图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 100V 180A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,584 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | ±16V | - | 370W (Tc) | 4.3 mOhm @ 110A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 100V 1.7A SOT-223
|
封装: TO-261-4, TO-261AA |
库存6,912 |
|
MOSFET (Metal Oxide) | 100V | 1.7A (Ta) | 10V | 4V @ 1mA | - | 550pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET P-CH 20V 5.3A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存267,324 |
|
MOSFET (Metal Oxide) | 20V | 5.3A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 25nC @ 10V | 860pF @ 10V | ±12V | - | 2.5W (Tc) | 60 mOhm @ 5.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH
|
封装: - |
库存3,296 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Vishay Siliconix |
MOSFET N-CH 60V 60A TO220AB
|
封装: TO-220-3 |
库存6,288 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 10V | 4.5V @ 250µA | 55nC @ 10V | 1970pF @ 30V | ±20V | - | 3.25W (Ta), 100W (Tc) | 12 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 2.9A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存288,600 |
|
MOSFET (Metal Oxide) | 20V | 2.9A (Ta) | 1.8V, 4.5V | 900mV @ 250µA | 13nC @ 4.5V | 715pF @ 6V | ±8V | - | 710mW (Ta) | 57 mOhm @ 3.3A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.6A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存3,744 |
|
MOSFET (Metal Oxide) | 200V | 4.6A (Tc) | 10V | 4V @ 250µA | 16nC @ 10V | 390pF @ 25V | ±30V | - | 2.5W (Ta), 40W (Tc) | 800 mOhm @ 2.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Panasonic Electronic Components |
MOSFET N-CH 80V 0.5A MINIP-3
|
封装: TO-243AA |
库存2,576 |
|
MOSFET (Metal Oxide) | 80V | 500mA (Ta) | 10V | 3.5V @ 1mA | - | 45pF @ 10V | 20V | - | 1W (Ta) | 4 Ohm @ 500mA, 10V | 150°C (TJ) | Surface Mount | MiniP3-F2 | TO-243AA |
||
Alpha & Omega Semiconductor Inc. |
MOSFET P-CH 12V 11A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存120,084 |
|
MOSFET (Metal Oxide) | 12V | 11A (Ta) | 1.8V, 4.5V | 1V @ 250µA | 47nC @ 4.5V | 4750pF @ 6V | ±8V | - | 3W (Ta) | 16 mOhm @ 11A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 5.8A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,160 |
|
MOSFET (Metal Oxide) | 900V | 5.8A (Tc) | 10V | 5V @ 250µA | 52nC @ 10V | 1880pF @ 25V | ±30V | - | 3.13W (Ta), 167W (Tc) | 1.9 Ohm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 150V 6.7A D-PAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,640 |
|
MOSFET (Metal Oxide) | 150V | 6.7A (Ta) | 6V, 10V | 4V @ 250µA | 11nC @ 10V | 344pF @ 75V | ±20V | - | 42W (Ta) | 420 mOhm @ 2.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 500V 15A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,008 |
|
MOSFET (Metal Oxide) | 500V | 15A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1200pF @ 50V | ±25V | - | 125W (Tc) | 260 mOhm @ 7.5A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH BARE DIE
|
封装: - |
库存7,792 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
IXYS |
MOSFET N-CH 900V 24A TO-264
|
封装: TO-264-3, TO-264AA |
库存5,856 |
|
MOSFET (Metal Oxide) | 900V | 24A (Tc) | 10V | 4.5V @ 4mA | 170nC @ 10V | 5900pF @ 25V | ±20V | - | 500W (Tc) | 450 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-264AA (IXFK) | TO-264-3, TO-264AA |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 9A TO220F
|
封装: TO-220-3 Full Pack, Formed Leads |
库存6,928 |
|
MOSFET (Metal Oxide) | 600V | 9A (Tc) | 10V | 4V @ 250µA | 29nC @ 10V | 1240pF @ 100V | ±30V | - | 29.8W (Tc) | 385 mOhm @ 4.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F-3 (Y-Forming) | TO-220-3 Full Pack, Formed Leads |
||
Vishay Siliconix |
MOSFET N-CH 100V 5.6A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,528 |
|
MOSFET (Metal Oxide) | 100V | 5.6A (Tc) | 4V, 5V | 2V @ 250µA | 6.1nC @ 5V | 250pF @ 25V | ±10V | - | 3.7W (Ta), 43W (Tc) | 540 mOhm @ 3.4A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 43.4A TO220AB
|
封装: TO-220-3 |
库存6,144 |
|
MOSFET (Metal Oxide) | 30V | 43.4A (Tc) | 4.5V, 10V | 2V @ 250µA | 18.5nC @ 10V | 690pF @ 25V | ±20V | - | 57.6W (Tc) | 17 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 20V 3.2A DFN1010D-3G
|
封装: 3-XDFN Exposed Pad |
库存3,776 |
|
MOSFET (Metal Oxide) | 20V | 3.2A (Ta) | 1.5V, 4.5V | 900mV @ 250µA | 10nC @ 4.5V | 551pF @ 10V | ±8V | - | 400mW (Ta), 8.33W (Tc) | 54 mOhm @ 3.2A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | DFN1010D-3 | 3-XDFN Exposed Pad |
||
IXYS |
MOSFET N-CH 650V 8A X2 TO-220
|
封装: TO-220-3 |
库存4,160 |
|
MOSFET (Metal Oxide) | 650V | 8A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 800pF @ 25V | ±30V | - | 150W (Tc) | 500 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 60V 3.3A 8DFN
|
封装: 8-PowerSMD, Flat Leads |
库存180,000 |
|
MOSFET (Metal Oxide) | 60V | 3.3A (Ta), 8A (Tc) | 7V, 10V | 3.3V @ 250µA | 5.3nC @ 10V | 285pF @ 30V | ±20V | - | 3.1W (Ta), 16.7W (Tc) | 145 mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (3x3) | 8-PowerSMD, Flat Leads |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 150V 1A MLP
|
封装: 8-PowerWDFN |
库存2,400 |
|
MOSFET (Metal Oxide) | 150V | 1A (Ta), 1.8A (Tc) | 6V, 10V | 4V @ 250µA | 4nC @ 10V | 210pF @ 75V | ±25V | - | 2.3W (Ta), 16W (Tc) | 1.2 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-MLP (3.3x3.3), Power33 | 8-PowerWDFN |
||
Diodes Incorporated |
MOSFET N-CH 100V 1.6A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存95,730 |
|
MOSFET (Metal Oxide) | 100V | 1.4A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 8.3nC @ 10V | 401pF @ 25V | ±16V | - | 1.3W (Ta) | 220 mOhm @ 1.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 50V 16A TO-252AA
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存444,636 |
|
MOSFET (Metal Oxide) | 50V | 16A (Tc) | 10V | 4V @ 250µA | 80nC @ 20V | 900pF @ 25V | ±20V | - | 72W (Tc) | 47 mOhm @ 16A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 600V 20A TO3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 20A (Tc) | 10V | 4.15V @ 1mA | 65 nC @ 10 V | 2040 pF @ 25 V | ±30V | - | 120W (Tc) | 220mOhm @ 10A, 10V | 150°C | Through Hole | TO-3PF | TO-3P-3 Full Pack |
||
onsemi |
NTND31215 - COMPLEMENTARY, SMALL
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
MOSFET P-CH 30V 22A/76A 8HSOP
|
封装: - |
库存32,019 |
|
MOSFET (Metal Oxide) | 30 V | 22A (Ta), 76A (Tc) | 4.5V, 10V | 2.5V @ 2mA | 130 nC @ 10 V | 5850 pF @ 15 V | ±20V | - | 3W (Ta) | 4.1mOhm @ 22A, 10V | 150°C (TJ) | Surface Mount | 8-HSOP | 8-PowerTDFN |
||
IXYS |
MOSFET N-CH 1200V 1.4A TO252
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 1200 V | 1.4A (Tc) | 10V | 4.5V @ 100µA | 24.8 nC @ 10 V | 666 pF @ 25 V | ±30V | - | 86W (Tc) | 13Ohm @ 700mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 200V 130A TO3P
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 200 V | 130A (Tc) | 10V | 5V @ 1mA | 150 nC @ 10 V | 8800 pF @ 25 V | ±20V | - | 830W (Tc) | 16mOhm @ 65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Renesas Electronics Corporation |
P-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
AUTOMOTIVE_COOLMOS PG-TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 96A (Tc) | 10V | 4.5V @ 2.91mA | 234 nC @ 10 V | 11659 pF @ 400 V | ±30V | - | 446W (Tc) | 22mOhm @ 58.2A, 10V | -40°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-31 | TO-247-3 |