图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 30V 80A TO-220
|
封装: TO-220-3 |
库存10,668 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 2V @ 250µA | 220nC @ 10V | 8180pF @ 25V | ±20V | - | 300W (Tc) | 3.1 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO220-3-1 | TO-220-3 |
||
IXYS |
MOSFET N-CH ISOPLUS247
|
封装: - |
库存3,392 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
P CHANNEL MOSFET
|
封装: TO-204AA, TO-3 |
库存5,088 |
|
MOSFET (Metal Oxide) | 100V | 25A (Tc) | 10V | 4V @ 250µA | - | 3000pF @ 25V | ±20V | - | 150W (Tc) | 200 mOhm @ 15.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3 | TO-204AA, TO-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 120A TO-220-3
|
封装: TO-220-3 |
库存18,768 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 10V | 4V @ 250µA | 74nC @ 10V | 5270pF @ 50V | ±20V | - | 263W (Tc) | 4.5 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
ON Semiconductor |
MOSFET N-CH 100V 13A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,248 |
|
MOSFET (Metal Oxide) | 100V | 13A (Ta) | 10V | 4V @ 250µA | 20nC @ 10V | 550pF @ 25V | ±20V | - | 64.7W (Ta) | 165 mOhm @ 6.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 100V 41A TO-247AC
|
封装: TO-247-3 |
库存10,632 |
|
MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 4V @ 250µA | 140nC @ 10V | 2800pF @ 25V | ±20V | - | 230W (Tc) | 55 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Vishay Siliconix |
MOSFET N-CH 100V 1.3A 4-DIP
|
封装: 4-DIP (0.300", 7.62mm) |
库存7,824 |
|
MOSFET (Metal Oxide) | 100V | 1.3A (Ta) | 4V, 5V | 2V @ 250µA | 12nC @ 5V | 490pF @ 25V | ±10V | - | 1.3W (Ta) | 270 mOhm @ 780mA, 5V | -55°C ~ 175°C (TJ) | Through Hole | 4-DIP, Hexdip, HVMDIP | 4-DIP (0.300", 7.62mm) |
||
STMicroelectronics |
MOSFET N-CH 500V 14A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,024 |
|
MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 4.5V @ 100µA | 106nC @ 10V | 2260pF @ 25V | ±30V | - | 160W (Tc) | 340 mOhm @ 7A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
LOW POWER_LEGACY
|
封装: - |
库存7,856 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 30V 10.8A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存17,652 |
|
MOSFET (Metal Oxide) | 30V | 10.8A (Ta) | 4.5V | 3V @ 250µA | 26nC @ 5V | 1801pF @ 10V | ±20V | - | 2.5W (Ta) | 14 mOhm @ 15A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
STMicroelectronics |
MOSFET N-CH 30V 80A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,752 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 4.5V, 10V | 1.2V @ 1mA | 13.7nC @ 4.5V | 2110pF @ 25V | ±20V | Schottky Diode (Body) | 57W (Tc) | 3.4 mOhm @ 40A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Diodes Incorporated |
MOSFET N-CH 70V 6.1A D-PAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存154,116 |
|
MOSFET (Metal Oxide) | 70V | 4.2A (Ta) | 4.5V, 10V | 1V @ 250µA | 7.4nC @ 10V | 298pF @ 40V | ±20V | - | 2.11W (Ta) | 130 mOhm @ 4.4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 500V 1.6A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存21,048 |
|
MOSFET (Metal Oxide) | 500V | 1.6A (Tc) | - | - | 23.7nC @ 5V | 645pF @ 25V | ±20V | Depletion Mode | 100W (Tc) | 2.3 Ohm @ 800mA, 0V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 100V 71A TDSON-8
|
封装: 8-PowerTDFN |
库存7,728 |
|
MOSFET (Metal Oxide) | 100V | 11A (Ta), 71A (Tc) | 10V | 4V @ 70µA | 56nC @ 10V | 3700pF @ 50V | ±20V | - | 114W (Tc) | 11.8 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8 | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 400V 38A
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,504 |
|
MOSFET (Metal Oxide) | 400V | 38A (Tc) | 10V | 5V @ 250µA | 56nC @ 10V | 2600pF @ 100V | ±25V | - | 250W (Tc) | 72 mOhm @ 19A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 4A TO-220
|
封装: TO-220-3 |
库存23,988 |
|
MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 5V @ 250µA | 101nC @ 10V | 5690pF @ 25V | ±30V | - | 403W (Tc) | 47 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Vishay Siliconix |
MOSFET N-CH 500V 5A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存407,268 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 24nC @ 10V | 490pF @ 25V | ±30V | - | 110W (Tc) | 1.7 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Rohm Semiconductor |
MOSFET N-CH 30V 10A HSMT8
|
封装: 8-PowerVDFN |
库存29,994 |
|
MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 9.9nC @ 10V | 520pF @ 15V | ±20V | - | 2W (Ta) | 12.3 mOhm @ 10A, 10V | 150°C (TJ) | Surface Mount | 8-HSMT (3.2x3) | 8-PowerVDFN |
||
IXYS |
MOSFET N-CH 100V 180A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存6,876 |
|
MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 4.5V @ 250µA | 151nC @ 10V | 6900pF @ 25V | ±30V | - | 480W (Tc) | 6.4 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Rohm Semiconductor |
MOSFET P-CH 100V 1.5A TSMT6
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存73,560 |
|
MOSFET (Metal Oxide) | 100V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 17nC @ 5V | 950pF @ 25V | ±20V | - | 600mW (Ta) | 470 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TSMT6 (SC-95) | SOT-23-6 Thin, TSOT-23-6 |
||
onsemi |
SIC 1700V MOS 1O IN TO247-3L
|
封装: - |
Request a Quote |
|
SiC (Silicon Carbide Junction Transistor) | 1700 V | 4.2A (Tc) | 20V | 4.3V @ 640µA | 14 nC @ 20 V | 150 pF @ 1000 V | +25V, -15V | - | 48W (Tc) | 1.43Ohm @ 2A, 20V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 9A TO247-3
|
封装: - |
库存4,722 |
|
SiCFET (Silicon Carbide) | 1700 V | 9A (Tc) | 15V | 2.7V @ 2mA | 18 nC @ 15 V | 454 pF @ 1000 V | ±15V | - | 88W (Tc) | 585mOhm @ 4A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Panjit International Inc. |
40V P-CHANNEL ENHANCEMENT MODE M
|
封装: - |
库存15,000 |
|
MOSFET (Metal Oxide) | 40 V | 12A (Ta), 60A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 59 nC @ 10 V | 3300 pF @ 25 V | ±25V | - | 2.5W (Ta), 63W (Tc) | 9.8mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DFN3333-8 | 8-PowerVDFN |
||
Diodes Incorporated |
MOSFET N-CH 30V 1.7A SOT23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 1.7A (Ta) | 2.5V, 4.5V | 700mV @ 250µA (Min) | 2.93 nC @ 4.5 V | 258 pF @ 15 V | ±12V | - | 625mW (Ta) | 150mOhm @ 1.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Qorvo |
SICFET N-CH 1200V 7.6A D2PAK-7
|
封装: - |
库存4,488 |
|
SiCFET (Cascode SiCJFET) | 1200 V | 7.6A (Tc) | 12V | 6V @ 10mA | 22.5 nC @ 15 V | 739 pF @ 800 V | ±25V | - | 100W (Tc) | 515mOhm @ 5A, 12V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK-7 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Vishay Siliconix |
MOSFET N-CH 30V 120A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 120A (Tc) | 10V | 2.5V @ 250µA | 450 nC @ 10 V | 28000 pF @ 15 V | ±20V | - | 375W (Tc) | 1.35mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
onsemi |
MOSFET N-CH 30V 5DFN
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 8.2A (Ta), 46A (Tc) | 4.5V, 10V | 2.2V @ 250µA | 18.6 nC @ 10 V | 987 pF @ 15 V | ±20V | - | 750mW (Ta), 23.6W (Tc) | 5.88mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Diodes Incorporated |
MOSFET N-CH 30V 15A 8SO T&R 2
|
封装: - |
库存13,926 |
|
MOSFET (Metal Oxide) | 30 V | 15A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 42 nC @ 10 V | 2000 pF @ 15 V | ±20V | - | 1.4W (Ta) | 5.5mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 800MA UFM
|
封装: - |
库存19,170 |
|
MOSFET (Metal Oxide) | 20 V | 800mA (Ta) | 1.2V, 4.5V | 1V @ 1mA | 2 nC @ 4.5 V | 177 pF @ 10 V | ±8V | - | 1W (Ta) | 57mOhm @ 800mA, 4.5V | 150°C | Surface Mount | UFM | 3-SMD, Flat Lead |
||
onsemi |
MOSFET N-CH 40V 80A POWER56
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 80A (Tc) | 10V | 4V @ 250µA | 92 nC @ 10 V | 5150 pF @ 20 V | ±20V | - | 214W (Tj) | 1.8mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |