图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存88,584 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 5V | 2V @ 250µA | 20nC @ 5V | 440pF @ 25V | ±10V | - | 48.4W (Tc) | 100 mOhm @ 7.5A, 5V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 250V 2.2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,776 |
|
MOSFET (Metal Oxide) | 250V | 2.2A (Tc) | 10V | 4V @ 250µA | 8.2nC @ 10V | 140pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 2 Ohm @ 1.3A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO220FP
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存5,296 |
|
MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 4V @ 250µA | 39nC @ 10V | 1100pF @ 25V | ±30V | - | 40W (Tc) | 850 mOhm @ 2.7A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
||
Vishay Siliconix |
MOSFET N-CH 500V 5A TO-220AB
|
封装: TO-220-3 |
库存10,992 |
|
MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 4.5V @ 250µA | 24nC @ 10V | 620pF @ 25V | ±30V | - | 74W (Tc) | 1.4 Ohm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
SUPERFET3 650V 250 MOHM, TO220F
|
封装: - |
库存6,400 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 80V 20.5A TO220
|
封装: TO-220-3 |
库存4,576 |
|
MOSFET (Metal Oxide) | 80V | 20.5A (Ta), 140A (Tc) | 6V, 10V | 3.4V @ 250µA | 224nC @ 10V | 11135pF @ 40V | ±20V | - | 2.1W (Ta), 333W (Tc) | 2.7 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 6A TO-220SIS
|
封装: TO-220-3 Full Pack |
库存4,880 |
|
MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | 4.4V @ 1mA | 11nC @ 10V | 540pF @ 25V | ±30V | - | 35W (Tc) | 1.4 Ohm @ 3A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Microchip Technology |
MOSFET N-CH 500V 30MA TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存3,792 |
|
MOSFET (Metal Oxide) | 500V | 30mA (Tj) | 0V | - | - | 10pF @ 25V | ±20V | Depletion Mode | 740mW (Ta) | 1000 Ohm @ 500µA, 0V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, PLANA
|
封装: TO-220-3 Full Pack, Isolated Tab |
库存6,544 |
|
MOSFET (Metal Oxide) | 800V | 3A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 696pF @ 25V | ±30V | - | 94W (Tc) | 4.2 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220 | TO-220-3 Full Pack, Isolated Tab |
||
Texas Instruments |
MOSFET N-CH 100V 100A VSONP
|
封装: 8-PowerTDFN |
库存16,416 |
|
MOSFET (Metal Oxide) | 100V | 100A (Ta) | 6V, 10V | 3.4V @ 250µA | 35nC @ 10V | 2670pF @ 50V | ±20V | - | 3.2W (Ta), 96W (Tc) | 9.4 mOhm @ 13A, 6V | -55°C ~ 150°C (TJ) | Surface Mount | 8-VSONP (5x6) | 8-PowerTDFN |
||
STMicroelectronics |
MOSFET N-CH 80V 80A TO-220
|
封装: TO-220-3 |
库存13,608 |
|
MOSFET (Metal Oxide) | 80V | 80A (Tc) | 10V | 4.5V @ 250µA | 46.8nC @ 10V | 3435pF @ 40V | ±20V | - | 170W (Tc) | 7.5 mOhm @ 40A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 11.4A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存31,560 |
|
MOSFET (Metal Oxide) | 60V | 11.4A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 550pF @ 25V | ±25V | - | 3.13W (Ta), 53W (Tc) | 175 mOhm @ 5.7A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V 74A MAX247
|
封装: TO-247-3 |
库存90,528 |
|
MOSFET (Metal Oxide) | 600V | 74A (Tc) | 10V | 4V @ 250µA | 360nC @ 10V | 10100pF @ 50V | ±25V | - | 447W (Tc) | 35 mOhm @ 37A, 10V | 150°C (TJ) | Through Hole | MAX247? | TO-247-3 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V LFPAK
|
封装: SC-100, SOT-669 |
库存17,076 |
|
MOSFET (Metal Oxide) | 30V | 71A (Tc) | 4.5V, 10V | 1.95V @ 1mA | 19nC @ 10V | 1088pF @ 15V | ±20V | - | 58W (Tc) | 6.5 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Infineon Technologies |
MOSFET N-CH 650V 15A TO-247
|
封装: TO-247-3 |
库存121,836 |
|
MOSFET (Metal Oxide) | 650V | 15A (Tc) | 10V | 3.9V @ 675µA | 63nC @ 10V | 1660pF @ 25V | ±20V | - | 156W (Tc) | 280 mOhm @ 9.4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 25V 220MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存7,609,752 |
|
MOSFET (Metal Oxide) | 25V | 220mA (Ta) | 2.7V, 4.5V | 1.06V @ 250µA | 0.7nC @ 4.5V | 9.5pF @ 10V | ±8V | - | 350mW (Ta) | 4 Ohm @ 400mA, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
STMicroelectronics |
MOSFET N-CH 600V 21A TO-220
|
封装: TO-220-3 |
库存4,992 |
|
MOSFET (Metal Oxide) | 600V | 21A (Tc) | 10V | 5V @ 250µA | 80nC @ 10V | 2400pF @ 50V | ±25V | - | 160W (Tc) | 160 mOhm @ 10.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Goford Semiconductor |
MOSFET N-CH 100V 120A DFN5*6-8L
|
封装: - |
库存14,550 |
|
MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 4V @ 250µA | 60 nC @ 10 V | 4217 pF @ 50 V | ±20V | - | 180W (Tc) | 5mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
||
Rohm Semiconductor |
NCH 60V 2.5A, TUMT6, POWER MOSFE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 2.5A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 3.1 nC @ 10 V | 135 pF @ 30 V | ±20V | - | 910mW (Ta) | 91mOhm @ 2.5A, 10V | 150°C (TJ) | Surface Mount | TUMT6 | 6-SMD, Flat Leads |
||
Rohm Semiconductor |
600V 24A TO-220FM, LOW-NOISE POW
|
封装: - |
库存2,940 |
|
MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 4V @ 1mA | 70 nC @ 10 V | 1650 pF @ 25 V | ±20V | - | 74W (Tc) | 165mOhm @ 11.3A, 10V | 150°C (TJ) | Through Hole | TO-220FM | TO-220-3 Full Pack |
||
Taiwan Semiconductor Corporation |
MOSFET N-CH 600V 24A ITO220S
|
封装: - |
库存45 |
|
MOSFET (Metal Oxide) | 600 V | 24A (Tc) | 10V | 4V @ 250µA | 43 nC @ 10 V | 1765 pF @ 100 V | ±30V | - | 62.5W (Tc) | 150mOhm @ 4.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | ITO-220S | TO-220-3 Full Pack |
||
Panjit International Inc. |
60V N-CHANNEL ENHANCEMENT MODE M
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 6A (Ta) | 10V | 2.5V @ 250µA | 20 nC @ 10 V | 1173 pF @ 25 V | ±20V | - | 2.5W (Ta) | 34mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Microchip Technology |
MOSFET N-CH 600V 54A TO264
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 54A (Tc) | - | 5V @ 2.5mA | 150 nC @ 10 V | 6710 pF @ 25 V | - | - | - | 100mOhm @ 27A, 10V | - | Through Hole | TO-264 [L] | TO-264-3, TO-264AA |
||
Infineon Technologies |
MOSFET N-CH 100V 300A HDSOP-16-2
|
封装: - |
库存5,730 |
|
MOSFET (Metal Oxide) | 100 V | 300A (Tj) | 6V, 10V | 3.8V @ 275µA | 216 nC @ 10 V | 16011 pF @ 50 V | ±20V | - | 375W (Tc) | 1.5mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-HDSOP-16-2 | 16-PowerSOP Module |
||
Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR
|
封装: - |
库存63 |
|
MOSFET (Metal Oxide) | 600 V | 20A (Ta) | 10V | 3.7V @ 1mA | 48 nC @ 10 V | 1680 pF @ 300 V | ±30V | - | 165W (Tc) | 155mOhm @ 10A, 10V | 150°C | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 37.9A TO220-FP
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 37.9A (Tc) | 10V | 3.5V @ 1.21mA | 119 nC @ 10 V | 2660 pF @ 100 V | ±20V | - | 35W (Tc) | 99mOhm @ 18.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-FP | TO-220-3 Full Pack |
||
onsemi |
MOSFET N-CH 60V 3.9A/113A 8LFPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 3.9A (Ta), 113A (Tc) | 4.5V, 10V | 2V @ 135µA | 52 nC @ 10 V | 3600 pF @ 25 V | ±20V | - | 3.9W (Ta), 113A (Tc) | 2.4mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-LFPAK | SOT-1205, 8-LFPAK56 |
||
Infineon Technologies |
MOSFET N-CH 600V 8.1A TO220-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 8.1A (Tc) | 10V | 3.5V @ 230µA | 23.4 nC @ 10 V | 512 pF @ 100 V | ±20V | - | 66W (Tc) | 520mOhm @ 2.8A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
Vishay Siliconix |
N-CHANNEL 40-V (D-S) MOSFET
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 3.2A (Ta), 4.3A (Tc) | 2.5V, 10V | 1.5V @ 250µA | 13 nC @ 10 V | 370 pF @ 20 V | ±12V | - | 960mW (Ta), 1.7W (Tc) | 51mOhm @ 3.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Diodes Incorporated |
MOSFET BVDSS: 31V~40V TO252 T&R
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 75A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 112 nC @ 10 V | 5697 pF @ 20 V | ±20V | - | 4W (Ta), 113W (Tc) | 11mOhm @ 9.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |