图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET P-CH 60V 1.9A SOT223
|
封装: TO-261-4, TO-261AA |
库存5,152 |
|
MOSFET (Metal Oxide) | 60V | 1.9A (Ta) | 4.5V, 10V | 2V @ 460µA | 20nC @ 10V | 460pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Vishay Siliconix |
MOSFET N-CH 100V 85A TO220AB
|
封装: TO-220-3 |
库存42,000 |
|
MOSFET (Metal Oxide) | 100V | 85A (Tc) | 4.5V, 10V | 3V @ 250µA | 160nC @ 10V | 6550pF @ 25V | ±20V | - | 3.75W (Ta), 250W (Tc) | 10.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 20A TO-220
|
封装: TO-220-3 |
库存2,704 |
|
MOSFET (Metal Oxide) | 600V | 20A (Tc) | 10V | 5V @ 250µA | 98nC @ 10V | 3080pF @ 25V | ±30V | - | 208W (Tc) | 190 mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 15A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存12,396 |
|
MOSFET (Metal Oxide) | 60V | 15A (Tc) | 10V | 4V @ 250µA | 17nC @ 10V | 450pF @ 25V | ±20V | - | 50W (Tc) | 100 mOhm @ 7.5A, 10V | -65°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
ON Semiconductor |
MOSFET N-CH 40V 100A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,072 |
|
MOSFET (Metal Oxide) | 40V | 24A (Ta), 123A (Tc) | 10V | 3.5V @ 250µA | 100nC @ 10V | 4760pF @ 25V | ±20V | - | 4W (Ta), 107W (Tc) | 3.7 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | DPAK-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8
|
封装: PowerPAK? SO-8 |
库存8,352 |
|
MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 160nC @ 10V | 7150pF @ 15V | ±20V | - | 6.25W (Ta), 104W (Tc) | 2.9 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
STMicroelectronics |
MOSFET N-CH 30V 52A TO220
|
封装: TO-220-3 |
库存3,408 |
|
MOSFET (Metal Oxide) | 30V | 52A | 4.5V, 10V | - | - | - | - | - | - | - | - | Through Hole | TO-220 | TO-220-3 |
||
IXYS |
MOSFET N-CH 500V 82A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存4,416 |
|
MOSFET (Metal Oxide) | 500V | 82A | 10V | 6.5V @ 8mA | 255nC @ 10V | 13800pF @ 25V | ±30V | - | 960W (Tc) | 49 mOhm @ 50A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 40V 100A
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存4,272 |
|
MOSFET (Metal Oxide) | 40V | 100A (Tc) | 10V | 3V @ 250µA | 125nC @ 10V | 6700pF @ 25V | ±20V | - | 227W (Tj) | 2.4 mOhm @ 80A, 4.5V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 80V 6-SSOT
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存1,446,696 |
|
MOSFET (Metal Oxide) | 80V | 2.1A (Ta) | 4.5V, 10V | 3V @ 250µA | 20nC @ 10V | 880pF @ 40V | ±20V | - | 1.6W (Ta) | 183 mOhm @ 2.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
IXYS |
MOSFET N-CH 1KV 21A PLUS247-3
|
封装: TO-247-3 |
库存103,464 |
|
MOSFET (Metal Oxide) | 1000V | 21A (Tc) | 10V | 5.5V @ 4mA | 160nC @ 10V | 5500pF @ 25V | ±20V | - | 500W (Tc) | 500 mOhm @ 10.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PLUS247?-3 | TO-247-3 |
||
STMicroelectronics |
MOSFET N-CH 60V 55A TO-220
|
封装: TO-220-3 |
库存814,104 |
|
MOSFET (Metal Oxide) | 60V | 55A (Tc) | 10V, 5V | 1.7V @ 250µA | 37nC @ 4.5V | 1700pF @ 25V | ±16V | - | 95W (Tc) | 18 mOhm @ 27.5A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
EPC |
TRANS GAN 150V 31A BUMPED DIE
|
封装: Die |
库存14,268 |
|
GaNFET (Gallium Nitride) | 150V | 31A (Ta) | 5V | 2.5V @ 9mA | 10nC @ 5V | 1140pF @ 75V | +6V, -4V | - | - | 7 mOhm @ 25A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Diodes Incorporated |
MOSFET N-CH 60V 3A 6-DFN
|
封装: 6-PowerUFDFN |
库存26,880 |
|
MOSFET (Metal Oxide) | 60V | 3A (Ta) | 4V, 10V | 3V @ 250µA | 12.3nC @ 10V | 606pF @ 20V | ±20V | - | 600mW (Ta) | 85 mOhm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | X1-DFN1616-6 (Type E) | 6-PowerUFDFN |
||
Rohm Semiconductor |
MOSFET P-CH 30V 1.5A TUMT3
|
封装: 3-SMD, Flat Leads |
库存142,440 |
|
MOSFET (Metal Oxide) | 30V | 1.5A (Ta) | 4V, 10V | 2.5V @ 1mA | 6.4nC @ 10V | 230pF @ 10V | ±20V | - | 320mW (Ta) | 160 mOhm @ 1.5A, 10V | 150°C (TJ) | Surface Mount | TUMT3 | 3-SMD, Flat Leads |
||
Infineon Technologies |
MOSFET N-CH 100V 0.19A SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存27,900 |
|
MOSFET (Metal Oxide) | 100V | 190mA (Ta) | 4.5V, 10V | 2.3V @ 13µA | 0.6nC @ 10V | 20.9pF @ 25V | ±20V | - | 500mW (Ta) | 6 Ohm @ 190mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Goford Semiconductor |
P-150V,-2.2A,RD(MAX)<310M@-10V,V
|
封装: - |
库存11,049 |
|
MOSFET (Metal Oxide) | 150 V | 2.2A (Tc) | 10V | 3.5V @ 250µA | 11 nC @ 10 V | 966 pF @ 75 V | ±20V | - | 2.5W (Tc) | 310mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
MOSLEADER |
P-Channel -20V -4.1A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Rohm Semiconductor |
PCH -40V -35A POWER MOSFET - RD3
|
封装: - |
库存13,857 |
|
MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 2.5V @ 1mA | 38 nC @ 10 V | 2100 pF @ 20 V | ±20V | - | 56W (Tc) | 19.1mOhm @ 35A, 10V | 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Goford Semiconductor |
N60V,RD(MAX)<15M@-4.5V,RD(MAX)<1
|
封装: - |
库存15,084 |
|
MOSFET (Metal Oxide) | 60 V | 14A (Tc) | 4.5V, 10V | 2.4V @ 250µA | 24 nC @ 10 V | 1300 pF @ 25 V | ±20V | - | 3W (Tc) | 11mOhm @ 14A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOP | 8-SOIC (0.154", 3.90mm Width) |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 10A (Ta) | 10V | 4V @ 1mA | 40 nC @ 10 V | 1300 pF @ 25 V | ±30V | - | 45W (Tc) | 750mOhm @ 5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Good-Ark Semiconductor |
MOSFET, N-CH, SINGLE, 4A, 150V,
|
封装: - |
库存14,610 |
|
MOSFET (Metal Oxide) | 150 V | 4A (Ta) | 10V | 2.5V @ 250µA | 19 nC @ 10 V | 900 pF @ 25 V | ±20V | - | - | 160mOhm @ 4A, 10V | 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 650V 7.3A TO251-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 7.3A (Tc) | 10V | 3.9V @ 350µA | 27 nC @ 10 V | 790 pF @ 25 V | ±20V | - | 83W (Tc) | 600mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO251-3-21 | TO-251-3 Short Leads, IPAK, TO-251AA |
||
Infineon Technologies |
MOSFET N-CH 30V 30A TO252-3
|
封装: - |
库存144,219 |
|
MOSFET (Metal Oxide) | 30 V | 30A (Tc) | 4.5V, 10V | 2.2V @ 13µA | 20 nC @ 10 V | 1520 pF @ 15 V | ±16V | - | 42W (Tc) | 9mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-11 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
TRENCH 40<-<100V
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 195A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 140 nC @ 4.5 V | 11210 pF @ 50 V | ±16V | - | 380W (Tc) | 2.4mOhm @ 165A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Renesas Electronics Corporation |
N-CHANNEL POWER MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |