页 359 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

APT10M11JVR

Microsemi Corporation

MOSFET N-CH 100V 144A ISOTOP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 144A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 450W (Tc)
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP?
Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

库存2,384

MOSFET (Metal Oxide)

100V

144A (Tc)

10V

4V @ 2.5mA

450nC @ 10V

10300pF @ 25V

±30V

-

450W (Tc)

-

-55°C ~ 150°C (TJ)

Chassis Mount

ISOTOP?

SOT-227-4, miniBLOC

AOT440L

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 40V TO220

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Through Hole
Supplier Device Package: TO-220
Package / Case: TO-220-3

封装: TO-220-3

库存2,304

-

Through Hole

TO-220

TO-220-3

PMPB12UN,115

NXP

MOSFET N-CH 20V 7.9A 6DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.9A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-DFN2020MD (2x2)
Package / Case: 6-UDFN Exposed Pad

封装: 6-UDFN Exposed Pad

库存3,952

MOSFET (Metal Oxide)

20V

7.9A (Ta)

1.8V, 4.5V

1V @ 250µA

13nC @ 4.5V

886pF @ 10V

±8V

-

1.7W (Ta), 12.5W (Tc)

18 mOhm @ 7.9A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

6-DFN2020MD (2x2)

6-UDFN Exposed Pad

NTD65N03RG

ON Semiconductor

MOSFET N-CH 25V 9.5A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存61,404

MOSFET (Metal Oxide)

25V

9.5A (Ta), 32A (Tc)

4.5V, 10V

2V @ 250µA

16nC @ 5V

1400pF @ 20V

±20V

-

1.3W (Ta), 50W (Tc)

8.4 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

FQD20N06LTF

Fairchild/ON Semiconductor

MOSFET N-CH 60V 17.2A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 60 mOhm @ 8.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,024

MOSFET (Metal Oxide)

60V

17.2A (Tc)

5V, 10V

2.5V @ 250µA

13nC @ 5V

630pF @ 25V

±20V

-

2.5W (Ta), 38W (Tc)

60 mOhm @ 8.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

BTS247ZE3062AATMA2

Infineon Technologies

MOSFET N-CH 55V 33A TO220-5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
Vgs (Max): ±20V
FET Feature: Temperature Sensing Diode
Power Dissipation (Max): 120W (Tc)
Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-5
Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

库存5,440

MOSFET (Metal Oxide)

55V

33A (Tc)

4.5V, 10V

2V @ 90µA

90nC @ 10V

1730pF @ 25V

±20V

Temperature Sensing Diode

120W (Tc)

18 mOhm @ 12A, 10V

-40°C ~ 175°C (TJ)

Surface Mount

PG-TO263-5

TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

BSC094N06LS5ATMA1

Infineon Technologies

DIFFERENTIATED MOSFETS

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,296

-

IXFR30N50Q

IXYS

MOSFET N-CH 500V 30A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 310W (Tc)
Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

封装: ISOPLUS247?

库存6,080

MOSFET (Metal Oxide)

500V

30A (Tc)

10V

4V @ 4mA

150nC @ 10V

3950pF @ 25V

±20V

-

310W (Tc)

160 mOhm @ 15A, 10V

-55°C ~ 150°C (TJ)

Through Hole

ISOPLUS247?

IXTR200N10P

IXYS

MOSFET N-CH 100V 120A ISOPLUS247

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: ISOPLUS247?
Package / Case: ISOPLUS247?

封装: ISOPLUS247?

库存3,248

MOSFET (Metal Oxide)

100V

120A (Tc)

10V

5V @ 500µA

235nC @ 10V

7600pF @ 25V

±20V

-

300W (Tc)

8 mOhm @ 60A, 10V

-55°C ~ 175°C (TJ)

Through Hole

ISOPLUS247?

NVMFS5844NLWFT3G

ON Semiconductor

MOSFET N-CH 60V 61A SO8FL

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 107W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存7,936

MOSFET (Metal Oxide)

60V

11.2A (Ta)

4.5V, 10V

2.3V @ 250µA

30nC @ 10V

1460pF @ 25V

±20V

-

3.7W (Ta), 107W (Tc)

12 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

5-DFN (5x6) (8-SOFL)

8-PowerTDFN

SI7726DN-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 35A 1212-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 1212-8
Package / Case: PowerPAK? 1212-8

封装: PowerPAK? 1212-8

库存609,132

MOSFET (Metal Oxide)

30V

35A (Tc)

4.5V, 10V

2.6V @ 250µA

43nC @ 10V

1765pF @ 15V

±20V

-

3.8W (Ta), 52W (Tc)

9.5 mOhm @ 10A, 10V

-50°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8

CSD25484F4

Texas Instruments

P-CHANNEL FEMTOFET MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.42nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V
Vgs (Max): -12V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 94 mOhm @ 500mA, 8V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 3-PICOSTAR
Package / Case: 3-XFDFN

封装: 3-XFDFN

库存2,016

MOSFET (Metal Oxide)

20V

2.5A (Ta)

1.8V, 8V

1.2V @ 250µA

1.42nC @ 4.5V

230pF @ 10V

-12V

-

500mW (Ta)

94 mOhm @ 500mA, 8V

-55°C ~ 150°C (TJ)

Surface Mount

3-PICOSTAR

3-XFDFN

ZXMP6A17GQTA

Diodes Incorporated

MOSFET P-CH 60V 3A SOT223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存4,544

MOSFET (Metal Oxide)

60V

3A (Ta)

4.5V, 10V

1V @ 250µA

17.7nC @ 10V

637pF @ 30V

±20V

-

2W (Ta)

125 mOhm @ 2.2A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

IRF610PBF

Vishay Siliconix

MOSFET N-CH 200V 3.3A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存114,396

MOSFET (Metal Oxide)

200V

3.3A (Tc)

10V

4V @ 250µA

8.2nC @ 10V

140pF @ 25V

±20V

-

36W (Tc)

1.5 Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

FDBL0240N100

Fairchild/ON Semiconductor

MOSFET N-CH 100V 210A POWER56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 8755pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Ta), 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-PSOF
Package / Case: 8-PowerSFN

封装: 8-PowerSFN

库存7,888

MOSFET (Metal Oxide)

100V

210A (Tc)

10V

4V @ 250µA

111nC @ 10V

8755pF @ 50V

±20V

-

3.5W (Ta), 300W (Tc)

2.8 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-PSOF

8-PowerSFN

FDC642P

Fairchild/ON Semiconductor

MOSFET P-CH 20V 4A SSOT-6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SuperSOT?-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存1,285,920

MOSFET (Metal Oxide)

20V

4A (Ta)

2.5V, 4.5V

1.5V @ 250µA

16nC @ 4.5V

925pF @ 10V

±8V

-

1.6W (Ta)

65 mOhm @ 4A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SuperSOT?-6

SOT-23-6 Thin, TSOT-23-6

DMN3024SFG-7

Diodes Incorporated

MOSFET N-CH 30V 7.5A PWRDI3333-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 15V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerDI3333-8
Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

库存2,144

MOSFET (Metal Oxide)

30V

7.5A (Ta)

4.5V, 10V

2.4V @ 250µA

10.5nC @ 10V

478.9pF @ 15V

±25V

-

900mW (Ta)

23 mOhm @ 10A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PowerDI3333-8

8-PowerWDFN

IRFI540GPBF

Vishay Siliconix

MOSFET N-CH 100V 17A TO220FP

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3 Full Pack, Isolated Tab

封装: TO-220-3 Full Pack, Isolated Tab

库存126,480

MOSFET (Metal Oxide)

100V

17A (Tc)

10V

4V @ 250µA

72nC @ 10V

1700pF @ 25V

±20V

-

48W (Tc)

77 mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220-3

TO-220-3 Full Pack, Isolated Tab

IRFR3410PBF

Infineon Technologies

MOSFET N-CH 100V 31A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3W (Ta), 110W (Tc)
Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存13,884

MOSFET (Metal Oxide)

100V

31A (Tc)

10V

4V @ 250µA

56nC @ 10V

1690pF @ 25V

±20V

-

3W (Ta), 110W (Tc)

39 mOhm @ 18A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

BSC046N10NS3GATMA1

Infineon Technologies

MOSFET N-CH 100V 100A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存262,650

MOSFET (Metal Oxide)

100V

17A (Ta), 100A (Tc)

6V, 10V

3.5V @ 120µA

63nC @ 10V

4500pF @ 50V

±20V

-

156W (Tc)

4.6 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

DMP22D6UT-7

Diodes Incorporated

MOSFET P-CH 20V 0.43A SOT-523

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V
Vgs (Max): ±8V
FET Feature: -
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-523
Package / Case: SOT-523

封装: SOT-523

库存24,510

MOSFET (Metal Oxide)

20V

430mA (Ta)

1.8V, 4.5V

1V @ 250µA

-

175pF @ 16V

±8V

-

150mW (Ta)

1.1 Ohm @ 430mA, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-523

NTE2933

NTE Electronics, Inc

MOSFET N-CHANNEL 400V 8A TO3PML

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 85W (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3PML
Package / Case: TO-3P-3 Full Pack

封装: -

Request a Quote

MOSFET (Metal Oxide)

400 V

8A (Tc)

10V

4V @ 250µA

75 nC @ 10 V

1530 pF @ 25 V

±30V

-

85W (Tc)

550mOhm @ 4A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-3PML

TO-3P-3 Full Pack

NVH4L027N65S3F

onsemi

SF3 FRFET AUTO 27MOHM TO-247-4L

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 595W (Tc)
Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247-4L
Package / Case: TO-247-4

封装: -

库存1,047

MOSFET (Metal Oxide)

650 V

75A (Tc)

10V

5V @ 3mA

227 nC @ 10 V

7780 pF @ 400 V

±30V

-

595W (Tc)

27.4mOhm @ 35A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247-4L

TO-247-4

IRFZ44RPBF-BE3

Vishay Siliconix

MOSFET N-CH 60V 50A TO220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

库存1,653

MOSFET (Metal Oxide)

60 V

50A (Tc)

-

4V @ 250µA

67 nC @ 10 V

1900 pF @ 25 V

±20V

-

150W (Tc)

28mOhm @ 31A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

NTMTS0D6N04CLTXG

onsemi

MOSFET N-CH 40V 554.5A

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W
Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFNW (8.3x8.4)
Package / Case: 8-PowerTDFN

封装: -

库存15,888

MOSFET (Metal Oxide)

40 V

554.5A (Tc)

4.5V, 10V

2V @ 250µA

126 nC @ 4.5 V

16013 pF @ 20 V

±20V

-

5W

0.42mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-DFNW (8.3x8.4)

8-PowerTDFN

SM2306NSAC-TRG-ML

MOSLEADER

N 30V 4.7A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

PSMN011-100YSFX

Nexperia USA Inc.

MOSFET N-CH 100V 79.5A LFPAK56

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 79.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2258 pF @ 50 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 152W (Ta)
Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: LFPAK56, Power-SO8
Package / Case: SC-100, SOT-669

封装: -

库存4,035

MOSFET (Metal Oxide)

100 V

79.5A (Ta)

7V, 10V

4V @ 1mA

34.3 nC @ 10 V

2258 pF @ 50 V

±20V

-

152W (Ta)

10.9mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

LFPAK56, Power-SO8

SC-100, SOT-669

IRLML0030TRPBF-1-ML

MOSLEADER

N 30V SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

STS3405-ML

MOSLEADER

Single-P -30V -3A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

EC4409C-TL-H

onsemi

NCH 1.8V DRIVE SERIES

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

零件编号	制造商	描述	封装	库存	Technology	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Feature	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature	Mounting Type	Supplier Device Package	Package / Case
APT10M11JVR	Microsemi Corporation	MOSFET N-CH 100V 144A ISOTOP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 144A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 2.5mA Gate Charge (Qg) (Max) @ Vgs: 450nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 450W (Tc) Rds On (Max) @ Id, Vgs: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Chassis Mount Supplier Device Package: ISOTOP? Package / Case: SOT-227-4, miniBLOC	封装: SOT-227-4, miniBLOC	库存2,384	MOSFET (Metal Oxide)	100V	144A (Tc)	10V	4V @ 2.5mA	450nC @ 10V	10300pF @ 25V	±30V	-	450W (Tc)	-	-55°C ~ 150°C (TJ)	Chassis Mount	ISOTOP?	SOT-227-4, miniBLOC
AOT440L	Alpha & Omega Semiconductor Inc.	MOSFET N-CH 40V TO220 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Through Hole Supplier Device Package: TO-220 Package / Case: TO-220-3	封装: TO-220-3	库存2,304	-	-	-	-	-	-	-	-	-	-	-	-	Through Hole	TO-220	TO-220-3
PMPB12UN,115	NXP	MOSFET N-CH 20V 7.9A 6DFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 886pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 7.9A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-DFN2020MD (2x2) Package / Case: 6-UDFN Exposed Pad	封装: 6-UDFN Exposed Pad	库存3,952	MOSFET (Metal Oxide)	20V	7.9A (Ta)	1.8V, 4.5V	1V @ 250µA	13nC @ 4.5V	886pF @ 10V	±8V	-	1.7W (Ta), 12.5W (Tc)	18 mOhm @ 7.9A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	6-DFN2020MD (2x2)	6-UDFN Exposed Pad
NTD65N03RG	ON Semiconductor	MOSFET N-CH 25V 9.5A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 32A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 20V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 1.3W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 8.4 mOhm @ 30A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存61,404	MOSFET (Metal Oxide)	25V	9.5A (Ta), 32A (Tc)	4.5V, 10V	2V @ 250µA	16nC @ 5V	1400pF @ 20V	±20V	-	1.3W (Ta), 50W (Tc)	8.4 mOhm @ 30A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	DPAK	TO-252-3, DPak (2 Leads + Tab), SC-63
FQD20N06LTF	Fairchild/ON Semiconductor	MOSFET N-CH 60V 17.2A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 630pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.5W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 60 mOhm @ 8.6A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,024	MOSFET (Metal Oxide)	60V	17.2A (Tc)	5V, 10V	2.5V @ 250µA	13nC @ 5V	630pF @ 25V	±20V	-	2.5W (Ta), 38W (Tc)	60 mOhm @ 8.6A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BTS247ZE3062AATMA2	Infineon Technologies	MOSFET N-CH 55V 33A TO220-5 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 90µA Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Vgs (Max): ±20V FET Feature: Temperature Sensing Diode Power Dissipation (Max): 120W (Tc) Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-5 Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB	库存5,440	MOSFET (Metal Oxide)	55V	33A (Tc)	4.5V, 10V	2V @ 90µA	90nC @ 10V	1730pF @ 25V	±20V	Temperature Sensing Diode	120W (Tc)	18 mOhm @ 12A, 10V	-40°C ~ 175°C (TJ)	Surface Mount	PG-TO263-5	TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
BSC094N06LS5ATMA1	Infineon Technologies	DIFFERENTIATED MOSFETS FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	库存7,296	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IXFR30N50Q	IXYS	MOSFET N-CH 500V 30A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 4mA Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 310W (Tc) Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	封装: ISOPLUS247?	库存6,080	MOSFET (Metal Oxide)	500V	30A (Tc)	10V	4V @ 4mA	150nC @ 10V	3950pF @ 25V	±20V	-	310W (Tc)	160 mOhm @ 15A, 10V	-55°C ~ 150°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
IXTR200N10P	IXYS	MOSFET N-CH 100V 120A ISOPLUS247 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 500µA Gate Charge (Qg) (Max) @ Vgs: 235nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 7600pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: ISOPLUS247? Package / Case: ISOPLUS247?	封装: ISOPLUS247?	库存3,248	MOSFET (Metal Oxide)	100V	120A (Tc)	10V	5V @ 500µA	235nC @ 10V	7600pF @ 25V	±20V	-	300W (Tc)	8 mOhm @ 60A, 10V	-55°C ~ 175°C (TJ)	Through Hole	ISOPLUS247?	ISOPLUS247?
NVMFS5844NLWFT3G	ON Semiconductor	MOSFET N-CH 60V 61A SO8FL FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.7W (Ta), 107W (Tc) Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 5-DFN (5x6) (8-SOFL) Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存7,936	MOSFET (Metal Oxide)	60V	11.2A (Ta)	4.5V, 10V	2.3V @ 250µA	30nC @ 10V	1460pF @ 25V	±20V	-	3.7W (Ta), 107W (Tc)	12 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	5-DFN (5x6) (8-SOFL)	8-PowerTDFN
SI7726DN-T1-GE3	Vishay Siliconix	MOSFET N-CH 30V 35A 1212-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 10A, 10V Operating Temperature: -50°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerPAK? 1212-8 Package / Case: PowerPAK? 1212-8	封装: PowerPAK? 1212-8	库存609,132	MOSFET (Metal Oxide)	30V	35A (Tc)	4.5V, 10V	2.6V @ 250µA	43nC @ 10V	1765pF @ 15V	±20V	-	3.8W (Ta), 52W (Tc)	9.5 mOhm @ 10A, 10V	-50°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8	PowerPAK? 1212-8
CSD25484F4	Texas Instruments	P-CHANNEL FEMTOFET MOSFET FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.42nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 10V Vgs (Max): -12V FET Feature: - Power Dissipation (Max): 500mW (Ta) Rds On (Max) @ Id, Vgs: 94 mOhm @ 500mA, 8V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 3-PICOSTAR Package / Case: 3-XFDFN	封装: 3-XFDFN	库存2,016	MOSFET (Metal Oxide)	20V	2.5A (Ta)	1.8V, 8V	1.2V @ 250µA	1.42nC @ 4.5V	230pF @ 10V	-12V	-	500mW (Ta)	94 mOhm @ 500mA, 8V	-55°C ~ 150°C (TJ)	Surface Mount	3-PICOSTAR	3-XFDFN
ZXMP6A17GQTA	Diodes Incorporated	MOSFET P-CH 60V 3A SOT223 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 637pF @ 30V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2W (Ta) Rds On (Max) @ Id, Vgs: 125 mOhm @ 2.2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	封装: TO-261-4, TO-261AA	库存4,544	MOSFET (Metal Oxide)	60V	3A (Ta)	4.5V, 10V	1V @ 250µA	17.7nC @ 10V	637pF @ 30V	±20V	-	2W (Ta)	125 mOhm @ 2.2A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-223	TO-261-4, TO-261AA
IRF610PBF	Vishay Siliconix	MOSFET N-CH 200V 3.3A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 3.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 2A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存114,396	MOSFET (Metal Oxide)	200V	3.3A (Tc)	10V	4V @ 250µA	8.2nC @ 10V	140pF @ 25V	±20V	-	36W (Tc)	1.5 Ohm @ 2A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-220AB	TO-220-3
FDBL0240N100	Fairchild/ON Semiconductor	MOSFET N-CH 100V 210A POWER56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 210A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 8755pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.5W (Ta), 300W (Tc) Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 80A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-PSOF Package / Case: 8-PowerSFN	封装: 8-PowerSFN	库存7,888	MOSFET (Metal Oxide)	100V	210A (Tc)	10V	4V @ 250µA	111nC @ 10V	8755pF @ 50V	±20V	-	3.5W (Ta), 300W (Tc)	2.8 mOhm @ 80A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-PSOF	8-PowerSFN
FDC642P	Fairchild/ON Semiconductor	MOSFET P-CH 20V 4A SSOT-6 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 16nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 925pF @ 10V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 1.6W (Ta) Rds On (Max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SuperSOT?-6 Package / Case: SOT-23-6 Thin, TSOT-23-6	封装: SOT-23-6 Thin, TSOT-23-6	库存1,285,920	MOSFET (Metal Oxide)	20V	4A (Ta)	2.5V, 4.5V	1.5V @ 250µA	16nC @ 4.5V	925pF @ 10V	±8V	-	1.6W (Ta)	65 mOhm @ 4A, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SuperSOT?-6	SOT-23-6 Thin, TSOT-23-6
DMN3024SFG-7	Diodes Incorporated	MOSFET N-CH 30V 7.5A PWRDI3333-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 15V Vgs (Max): ±25V FET Feature: - Power Dissipation (Max): 900mW (Ta) Rds On (Max) @ Id, Vgs: 23 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PowerDI3333-8 Package / Case: 8-PowerWDFN	封装: 8-PowerWDFN	库存2,144	MOSFET (Metal Oxide)	30V	7.5A (Ta)	4.5V, 10V	2.4V @ 250µA	10.5nC @ 10V	478.9pF @ 15V	±25V	-	900mW (Ta)	23 mOhm @ 10A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PowerDI3333-8	8-PowerWDFN
IRFI540GPBF	Vishay Siliconix	MOSFET N-CH 100V 17A TO220FP FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 77 mOhm @ 10A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3 Full Pack, Isolated Tab	封装: TO-220-3 Full Pack, Isolated Tab	库存126,480	MOSFET (Metal Oxide)	100V	17A (Tc)	10V	4V @ 250µA	72nC @ 10V	1700pF @ 25V	±20V	-	48W (Tc)	77 mOhm @ 10A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220-3	TO-220-3 Full Pack, Isolated Tab
IRFR3410PBF	Infineon Technologies	MOSFET N-CH 100V 31A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 31A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3W (Ta), 110W (Tc) Rds On (Max) @ Id, Vgs: 39 mOhm @ 18A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存13,884	MOSFET (Metal Oxide)	100V	31A (Tc)	10V	4V @ 250µA	56nC @ 10V	1690pF @ 25V	±20V	-	3W (Ta), 110W (Tc)	39 mOhm @ 18A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	D-Pak	TO-252-3, DPak (2 Leads + Tab), SC-63
BSC046N10NS3GATMA1	Infineon Technologies	MOSFET N-CH 100V 100A TDSON-8 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs(th) (Max) @ Id: 3.5V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 156W (Tc) Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 50A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TDSON-8 Package / Case: 8-PowerTDFN	封装: 8-PowerTDFN	库存262,650	MOSFET (Metal Oxide)	100V	17A (Ta), 100A (Tc)	6V, 10V	3.5V @ 120µA	63nC @ 10V	4500pF @ 50V	±20V	-	156W (Tc)	4.6 mOhm @ 50A, 10V	-55°C ~ 150°C (TJ)	Surface Mount	PG-TDSON-8	8-PowerTDFN
DMP22D6UT-7	Diodes Incorporated	MOSFET P-CH 20V 0.43A SOT-523 FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 430mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 175pF @ 16V Vgs (Max): ±8V FET Feature: - Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 430mA, 4.5V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-523 Package / Case: SOT-523	封装: SOT-523	库存24,510	MOSFET (Metal Oxide)	20V	430mA (Ta)	1.8V, 4.5V	1V @ 250µA	-	175pF @ 16V	±8V	-	150mW (Ta)	1.1 Ohm @ 430mA, 4.5V	-55°C ~ 150°C (TJ)	Surface Mount	SOT-523	SOT-523
NTE2933	NTE Electronics, Inc	MOSFET N-CHANNEL 400V 8A TO3PML FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 400 V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1530 pF @ 25 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 85W (Tc) Rds On (Max) @ Id, Vgs: 550mOhm @ 4A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3PML Package / Case: TO-3P-3 Full Pack	封装: -	Request a Quote	MOSFET (Metal Oxide)	400 V	8A (Tc)	10V	4V @ 250µA	75 nC @ 10 V	1530 pF @ 25 V	±30V	-	85W (Tc)	550mOhm @ 4A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-3PML	TO-3P-3 Full Pack
NVH4L027N65S3F	onsemi	SF3 FRFET AUTO 27MOHM TO-247-4L FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 227 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7780 pF @ 400 V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 595W (Tc) Rds On (Max) @ Id, Vgs: 27.4mOhm @ 35A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-247-4L Package / Case: TO-247-4	封装: -	库存1,047	MOSFET (Metal Oxide)	650 V	75A (Tc)	10V	5V @ 3mA	227 nC @ 10 V	7780 pF @ 400 V	±30V	-	595W (Tc)	27.4mOhm @ 35A, 10V	-55°C ~ 150°C (TJ)	Through Hole	TO-247-4L	TO-247-4
IRFZ44RPBF-BE3	Vishay Siliconix	MOSFET N-CH 60V 50A TO220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60 V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 150W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 31A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: -	库存1,653	MOSFET (Metal Oxide)	60 V	50A (Tc)	-	4V @ 250µA	67 nC @ 10 V	1900 pF @ 25 V	±20V	-	150W (Tc)	28mOhm @ 31A, 10V	-55°C ~ 175°C (TJ)	Through Hole	TO-220AB	TO-220-3
NTMTS0D6N04CLTXG	onsemi	MOSFET N-CH 40V 554.5A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40 V Current - Continuous Drain (Id) @ 25°C: 554.5A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 16013 pF @ 20 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 5W Rds On (Max) @ Id, Vgs: 0.42mOhm @ 50A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-DFNW (8.3x8.4) Package / Case: 8-PowerTDFN	封装: -	库存15,888	MOSFET (Metal Oxide)	40 V	554.5A (Tc)	4.5V, 10V	2V @ 250µA	126 nC @ 4.5 V	16013 pF @ 20 V	±20V	-	5W	0.42mOhm @ 50A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	8-DFNW (8.3x8.4)	8-PowerTDFN
SM2306NSAC-TRG-ML	MOSLEADER	N 30V 4.7A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
PSMN011-100YSFX	Nexperia USA Inc.	MOSFET N-CH 100V 79.5A LFPAK56 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100 V Current - Continuous Drain (Id) @ 25°C: 79.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 34.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2258 pF @ 50 V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 152W (Ta) Rds On (Max) @ Id, Vgs: 10.9mOhm @ 20A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: LFPAK56, Power-SO8 Package / Case: SC-100, SOT-669	封装: -	库存4,035	MOSFET (Metal Oxide)	100 V	79.5A (Ta)	7V, 10V	4V @ 1mA	34.3 nC @ 10 V	2258 pF @ 50 V	±20V	-	152W (Ta)	10.9mOhm @ 20A, 10V	-55°C ~ 175°C (TJ)	Surface Mount	LFPAK56, Power-SO8	SC-100, SOT-669
IRLML0030TRPBF-1-ML	MOSLEADER	N 30V SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
STS3405-ML	MOSLEADER	Single-P -30V -3A SOT-23 FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
EC4409C-TL-H	onsemi	NCH 1.8V DRIVE SERIES FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: - Supplier Device Package: - Package / Case: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-