图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 17A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,104 |
|
MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 4V @ 250µA | 20nC @ 10V | 370pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 70 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 150V 88A TO-247AD
|
封装: TO-247-3 |
库存7,280 |
|
MOSFET (Metal Oxide) | 150V | 88A (Tc) | 10V | 4V @ 250µA | 170nC @ 10V | 4000pF @ 25V | ±20V | - | 400W (Tc) | 22 mOhm @ 44A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247 (IXTH) | TO-247-3 |
||
ON Semiconductor |
MOSFET N-CH 100V 52A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存395,556 |
|
MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 4V @ 250µA | 135nC @ 10V | 3150pF @ 25V | ±20V | - | 2W (Ta), 178W (Tc) | 30 mOhm @ 26A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 9.3A I2PAK
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存5,952 |
|
MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | ±25V | - | 3.75W (Ta), 40W (Tc) | 210 mOhm @ 4.65A, 10V | -55°C ~ 175°C (TJ) | Through Hole | I2PAK (TO-262) | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Vishay Siliconix |
MOSFET N-CH 800V 4.1A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,408 |
|
MOSFET (Metal Oxide) | 800V | 4.1A (Tc) | 10V | 4V @ 250µA | 78nC @ 10V | 1300pF @ 25V | ±20V | - | 125W (Tc) | 3 Ohm @ 2.5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 800V 11A TO220
|
封装: TO-220-3 Isolated Tab |
库存4,848 |
|
MOSFET (Metal Oxide) | 800V | 11A (Tc) | 10V | 3.9V @ 680µA | 85nC @ 10V | 1600pF @ 100V | ±20V | - | 34W (Tc) | 450 mOhm @ 7.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 Isolated Tab |
||
Infineon Technologies |
MOSFET N-CH 40V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,528 |
|
MOSFET (Metal Oxide) | 40V | 120A (Tc) | 10V | 4V @ 150µA | 150nC @ 10V | 4340pF @ 25V | ±20V | - | 200W (Tc) | 3.7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
IXYS |
MOSFET N-CH 500V 24A TO-3P
|
封装: TO-3P-3, SC-65-3 |
库存3,264 |
|
MOSFET (Metal Oxide) | 500V | 24A (Tc) | - | - | - | - | - | - | - | - | - | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
||
Nexperia USA Inc. |
BSS84AK/SOT23/TO-236AB
|
封装: - |
库存6,320 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
ON Semiconductor |
TRENCH 6 60V FET
|
封装: - |
库存7,104 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
MOSFET N-CH 950V 8A TO-220FP
|
封装: TO-220-3 Full Pack |
库存60,000 |
|
MOSFET (Metal Oxide) | 950V | 8A (Tc) | 10V | 5V @ 100µA | 22nC @ 10V | 630pF @ 100V | ±30V | - | 30W (Tc) | 800 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET N-CH 55V 53A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存9,864 |
|
MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | - | 3.8W (Ta), 107W (Tc) | 16.5 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 600V 15.8A TO-220SIS
|
封装: TO-220-3 Full Pack |
库存8,520 |
|
MOSFET (Metal Oxide) | 600V | 15.8A (Ta) | 10V | 3.7V @ 790µA | 38nC @ 10V | 1350pF @ 300V | ±30V | Super Junction | 40W (Tc) | 190 mOhm @ 7.9A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 60V 60A SOP ADV
|
封装: 8-PowerVDFN |
库存46,728 |
|
MOSFET (Metal Oxide) | 60V | 60A (Tc) | 6.5V, 10V | 4V @ 1mA | 72nC @ 10V | 6100pF @ 30V | ±20V | - | 1.6W (Ta), 78W (Tc) | 2.3 mOhm @ 30A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET N-CH 20V 5.4A 1206-8
|
封装: 8-SMD, Flat Lead |
库存176,508 |
|
MOSFET (Metal Oxide) | 20V | 5.4A (Ta) | 2.5V, 4.5V | 1.5V @ 250µA | 11nC @ 4.5V | - | ±12V | - | 1.3W (Ta) | 28 mOhm @ 5.4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 1206-8 ChipFET? | 8-SMD, Flat Lead |
||
STMicroelectronics |
MOSFET N-CH 600V 23A TO220FP
|
封装: TO-220-3 Full Pack |
库存3,456 |
|
MOSFET (Metal Oxide) | 600V | 23A (Tc) | 10V | 5V @ 250µA | 62.5nC @ 10V | 2090pF @ 100V | ±25V | - | 35W (Tc) | 150 mOhm @ 11.5A, 10V | 150°C (TJ) | Through Hole | TO-220FP | TO-220-3 Full Pack |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 30V 3.6A SOT23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存5,053,920 |
|
MOSFET (Metal Oxide) | 30V | 3.6A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 5nC @ 10V | 210pF @ 15V | ±20V | - | 1.4W (Ta) | 50 mOhm @ 3.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3L | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET N-CH 20V 3.9A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,757,004 |
|
MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.8V, 4.5V | 850mV @ 250µA | 12nC @ 4.5V | - | ±8V | - | 750mW (Ta) | 31 mOhm @ 5A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 (TO-236) | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
SILICON CARBIDE MOSFET PG-TO263-
|
封装: - |
库存2,466 |
|
SiCFET (Silicon Carbide) | 650 V | 33A (Tc) | 18V | 5.7V @ 4mA | 22 nC @ 18 V | 744 pF @ 400 V | +23V, -5V | - | 140W (Tc) | 94mOhm @ 13.3A, 18V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-7-12 | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
||
Diodes Incorporated |
MOSFET BVDSS: 61V~100V POWERDI33
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 100 V | 11A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 6.7 nC @ 10 V | 366 pF @ 50 V | ±20V | - | 2.4W (Ta), 41W (Tc) | 222mOhm @ 2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount, Wettable Flank | PowerDI3333-8 (SWP) Type UX | 8-PowerVDFN |
||
Infineon Technologies |
MOSFET N-CH 650V 17.5A TO247-3
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 17.5A (Tc) | 10V | 4.5V @ 730µA | 68 nC @ 10 V | 1850 pF @ 100 V | ±20V | - | 151W (Tc) | 190mOhm @ 7.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3-1 | TO-247-3 |
||
Panjit International Inc. |
SOT-23, MOSFET
|
封装: - |
库存68,214 |
|
MOSFET (Metal Oxide) | 40 V | 3.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 6 nC @ 4.5 V | 505 pF @ 20 V | ±20V | - | 1.25W (Ta) | 88mOhm @ 3.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
N-CHANNEL 500V
|
封装: - |
库存2,946 |
|
MOSFET (Metal Oxide) | 500 V | 10.5A (Tc) | 10V | 4V @ 250µA | 50 nC @ 10 V | 886 pF @ 100 V | ±30V | - | 114W (Tc) | 380mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
onsemi |
MOSFET N-CH 60V 500MA TO92-3
|
封装: - |
库存63,876 |
|
MOSFET (Metal Oxide) | 60 V | 500mA (Ta) | 10V | 3V @ 1mA | - | 40 pF @ 10 V | ±20V | - | 830mW (Ta) | 5Ohm @ 200mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
||
Infineon Technologies |
MOSFET N-CH 650V 68.5A TO247-3
|
封装: - |
库存417 |
|
MOSFET (Metal Oxide) | 650 V | 68.5A (Tc) | 10V | 4.5V @ 3.3mA | 300 nC @ 10 V | 8400 pF @ 100 V | ±20V | - | 500W (Tc) | 41mOhm @ 33.1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-3 | TO-247-3 |
||
Central Semiconductor Corp |
MOSFET N-CH 800V 6A TO220
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 4V @ 250µA | 24.3 nC @ 10 V | 474.7 pF @ 100 V | 30V | - | 110W (Tc) | 950mOhm @ 3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
||
Renesas Electronics Corporation |
MOSFET N-CH 16V 3.2A UPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 16 V | 3.2A (Ta) | - | 800mV @ 1mA | - | 76 pF @ 0 V | ±5V | - | 15W (Tc) | - | 150°C | Surface Mount | UPAK | TO-243AA |
||
EPC |
TRANS GAN 170V DIE .009OHM
|
封装: - |
库存86,190 |
|
GaNFET (Gallium Nitride) | 170 V | 24A (Ta) | 5V | 2.5V @ 3mA | 7.4 nC @ 5 V | 836 pF @ 85 V | +6V, -4V | - | - | 9mOhm @ 10A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Goford Semiconductor |
N40V,100A,RD<1.3M@10V,VTH1.0V~2.
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 45 V | 100A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 86 nC @ 10 V | 6864 pF @ 20 V | ±20V | - | 125W (Tc) | 1.3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (4.9x5.75) | 8-PowerTDFN |
||
MOSLEADER |
P -30V -3.6A SOT-23
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |