图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET COOL MOS SAWED WAFER
|
封装: - |
库存2,560 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 30V 22A DIRECTFET
|
封装: DirectFET? Isometric MX |
库存2,432 |
|
MOSFET (Metal Oxide) | 30V | 22A (Ta), 160A (Tc) | 4.5V, 10V | 2.4V @ 150µA | 130nC @ 10V | 7305pF @ 15V | ±20V | - | 2.1W (Ta), 113W (Tc) | 2.9 mOhm @ 22A, 10V | -40°C ~ 150°C (TJ) | Surface Mount | DIRECTFET? MX | DirectFET? Isometric MX |
||
Infineon Technologies |
MOSFET N-CH 60V 2.9A SOT-223
|
封装: TO-261-4, TO-261AA |
库存3,200 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 4V @ 20µA | 12nC @ 10V | 340pF @ 25V | ±20V | - | 1.8W (Ta) | 120 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223
|
封装: TO-261-4, TO-261AA |
库存3,488 |
|
MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 2.3V @ 94µA | 6.6nC @ 10V | 150pF @ 25V | ±20V | - | 1.8W (Ta) | 45 Ohm @ 120mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 49V 80A TO220-7
|
封装: TO-220-7 (Formed Leads) |
库存7,920 |
|
MOSFET (Metal Oxide) | 49V | 80A (Tc) | 4.5V, 10V | 2V @ 240µA | 232nC @ 10V | 4800pF @ 25V | ±20V | Temperature Sensing Diode | 300W (Tc) | 6.5 mOhm @ 36A, 10V | -40°C ~ 175°C (TJ) | Through Hole | PG-TO220-7 | TO-220-7 (Formed Leads) |
||
Vishay Siliconix |
MOSFET N-CH 75V 90A TO220AB
|
封装: TO-220-3 |
库存4,800 |
|
MOSFET (Metal Oxide) | 75V | 90A (Tc) | 10V | 4.5V @ 250µA | 115nC @ 10V | 4620pF @ 30V | ±20V | - | 3.75W (Ta), 272W (Tc) | 6.8 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 100V 2.6A 6-SSOT
|
封装: SOT-23-6 Thin, TSOT-23-6 |
库存6,704 |
|
MOSFET (Metal Oxide) | 100V | 2.6A (Ta) | 6V, 10V | 4V @ 250µA | 20nC @ 10V | 660pF @ 50V | ±20V | - | 1.6W (Ta) | 125 mOhm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SuperSOT?-6 | SOT-23-6 Thin, TSOT-23-6 |
||
Renesas Electronics America |
MOSFET N-CH 100V 15A 5LFPAK
|
封装: SC-100, SOT-669 |
库存75,972 |
|
MOSFET (Metal Oxide) | 100V | 15A (Ta) | 7V, 10V | - | 46nC @ 10V | 3200pF @ 10V | ±20V | - | 20W (Tc) | 27.5 mOhm @ 7.5A, 10V | 150°C (TJ) | Surface Mount | LFPAK | SC-100, SOT-669 |
||
ON Semiconductor |
MOSFET N-CH 30V 11A SO-8FL
|
封装: 8-PowerTDFN, 5 Leads |
库存40,548 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta), 90A (Tc) | 4.5V, 11.5V | 2.5V @ 250µA | 28nC @ 4.5V | 2677pF @ 12V | ±20V | - | 890mW (Ta), 55.6W (Tc) | 4 mOhm @ 30A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 5-DFN (5x6) (8-SOFL) | 8-PowerTDFN, 5 Leads |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 200V 4.5A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,800 |
|
MOSFET (Metal Oxide) | 200V | 4.5A (Tc) | 10V | 5V @ 250µA | 7.5nC @ 10V | 270pF @ 25V | ±30V | - | 3.13W (Ta), 52W (Tc) | 1.2 Ohm @ 2.25A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 9.3A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,936 |
|
MOSFET (Metal Oxide) | 80V | 9.3A (Tc) | 10V | 4V @ 250µA | 7.7nC @ 10V | 250pF @ 25V | ±25V | - | 3.75W (Ta), 40W (Tc) | 210 mOhm @ 4.65A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK (TO-263AB) | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-220AB
|
封装: TO-220-3 |
库存16,800 |
|
MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 4.5V @ 250µA | 17nC @ 10V | 340pF @ 25V | ±30V | - | 50W (Tc) | 3 Ohm @ 1.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V BARE DIE
|
封装: Die |
库存6,560 |
|
MOSFET (Metal Oxide) | 100V | 1A (Tj) | 10V | 3.5V @ 302µA | - | - | - | - | - | 100 mOhm @ 2A, 10V | - | Surface Mount | Sawn on foil | Die |
||
Infineon Technologies |
MOSFET N-CH TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存5,648 |
|
MOSFET (Metal Oxide) | 250V | 5A (Tc) | 10V | 4V @ 13µA | 6.2nC @ 10V | 422pF @ 25V | ±20V | - | 41W (Tc) | 430 mOhm @ 5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3-313 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 120A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,776 |
|
MOSFET (Metal Oxide) | 30V | 120A (Tc) | 4.5V, 10V | 2.8V @ 1mA | 168nC @ 10V | 10918pF @ 25V | ±16V | - | 263W (Tc) | 1.9 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 30V 80A IPAK
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存14,748 |
|
MOSFET (Metal Oxide) | 30V | 80A (Tc) | 5V, 10V | 2.5V @ 250µA | 14nC @ 5V | 1850pF @ 25V | ±22V | - | 70W (Tc) | 5.4 mOhm @ 40A, 10V | 175°C (TJ) | Through Hole | I-Pak | TO-251-3 Short Leads, IPak, TO-251AA |
||
Central Semiconductor Corp |
MOSFET N-CH 30V 11A 8SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存5,472 |
|
MOSFET (Metal Oxide) | 30V | 11A (Ta) | 4.5V, 10V | 3V @ 250µA | 6.3nC @ 5V | 860pF @ 15V | 20V | - | 2.5W (Ta) | 20 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
Rohm Semiconductor |
MOSFET N-CH 30V 13A 8PSOP
|
封装: 8-SMD, Flat Lead |
库存21,498 |
|
MOSFET (Metal Oxide) | 30V | 13A (Ta) | 4.5V, 10V | 2.5V @ 1mA | 12nC @ 10V | 650pF @ 15V | ±20V | - | 3W (Ta) | 12.6 mOhm @ 13A, 10V | 150°C (TJ) | Surface Mount | 8-PSOP | 8-SMD, Flat Lead |
||
Toshiba Semiconductor and Storage |
MOSFET N CH 30V 32A 8SOP
|
封装: 8-PowerVDFN |
库存28,476 |
|
MOSFET (Metal Oxide) | 30V | 32A (Ta) | 4.5V, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | ±20V | - | 1.6W (Ta), 21W (Tc) | 11 mOhm @ 5.5A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Nexperia USA Inc. |
PSMN1R9-40YSB/SOT669/LFPAK
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 200A (Ta) | 10V | 3.6V @ 1mA | 78 nC @ 10 V | 6297 pF @ 20 V | ±20V | Schottky Diode (Body) | 194W (Ta) | 1.9mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Rohm Semiconductor |
1200V, 43A, 3-PIN THD, TRENCH-ST
|
封装: - |
Request a Quote |
|
SiCFET (Silicon Carbide) | 1200 V | 43A (Tc) | 18V | 4.8V @ 11.1mA | 91 nC @ 18 V | 2335 pF @ 800 V | +21V, -4V | - | 176W | 47mOhm @ 21A, 18V | 175°C (TJ) | Through Hole | TO-247N | TO-247-3 |
||
EPC Space, LLC |
GAN FET HEMT 40V 8A 4FSMD-A
|
封装: - |
Request a Quote |
|
GaNFET (Gallium Nitride) | 40 V | 8A (Tc) | 5V | 2.5V @ 2mA | 2.8 nC @ 5 V | 312 pF @ 20 V | +6V, -4V | - | - | 24mOhm @ 8A, 5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-SMD | 4-SMD, No Lead |
||
Sanyo |
MOSFET P-CH
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Alpha & Omega Semiconductor Inc. |
N
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 37A (Ta), 85A (Tc) | 4.5V, 10V | 1.9V @ 250µA | 60 nC @ 10 V | 2430 pF @ 15 V | ±20V | - | 6.2W (Ta), 42W (Tc) | 3mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Infineon Technologies |
MOSFET_(120V 300V)
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 120 V | 100A (Tc) | 10V | 4V @ 240µA | 185 nC @ 10 V | 11570 pF @ 25 V | ±20V | - | 300W (Tc) | 5.1mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 600V TO220
|
封装: - |
库存1,869 |
|
MOSFET (Metal Oxide) | 600 V | 17A (Tj) | 10V | 4.75V @ 250µA | 23 nC @ 10 V | 960 pF @ 100 V | ±25V | - | 130W (Tc) | 190mOhm @ 8.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
Infineon Technologies |
SICFET N-CH 1.2KV 36A TO247-4
|
封装: - |
库存1,335 |
|
SiCFET (Silicon Carbide) | 1200 V | 36A (Tc) | 15V, 18V | 5.7V @ 5.6mA | 31 nC @ 18 V | 1060 pF @ 800 V | +23V, -7V | - | 150W (Tc) | 78mOhm @ 13A, 18V | -55°C ~ 175°C (TJ) | Through Hole | PG-TO247-4-1 | TO-247-4 |
||
Taiwan Semiconductor Corporation |
600V, 9.5A, SINGLE N-CHANNEL POW
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 600 V | 9.5A (Tc) | 10V | 4V @ 250µA | 19.4 nC @ 10 V | 795 pF @ 100 V | ±30V | - | 83W (Tc) | 380mOhm @ 2.85A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
Goford Semiconductor |
P100V,RD(MAX)<200M@-10V,RD(MAX)<
|
封装: - |
库存3,471 |
|
MOSFET (Metal Oxide) | 100 V | 12A | - | 3V @ 250µA | 33 nC @ 10 V | 1720 pF @ 50 V | ±20V | - | 57W | 200mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 (DPAK) | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
||
onsemi |
FDC6N50NZFTM
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |