图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 20V 15A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,368 |
|
MOSFET (Metal Oxide) | 20V | 15A (Ta) | 4.5V, 10V | 3V @ 250µA | 42nC @ 4.5V | 3100pF @ 10V | ±20V | - | 2.5W (Ta) | 7 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Diodes Incorporated |
MOSFET P-CH 30V 10.6A TO252
|
封装: - |
库存3,408 |
|
- | - | - | - | - | - | - | - | - | - | - | -55°C ~ 150°C (TJ) | Surface Mount | - | - |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 25V 55A TO-252
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存77,976 |
|
MOSFET (Metal Oxide) | 25V | 18A (Ta), 46A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 40nC @ 10V | 2200pF @ 12.5V | ±20V | - | 2.5W (Ta), 50W (Tc) | 5.5 mOhm @ 30A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 30V 25A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存268,116 |
|
MOSFET (Metal Oxide) | 30V | 25A (Tc) | 4.5V, 10V | 1V @ 250µA | 40nC @ 4.5V | 4450pF @ 25V | ±18V | - | 3.2W (Tc) | 3.5 mOhm @ 12.5A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
IXYS |
MOSFET N-CH 600V 32A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存6,048 |
|
MOSFET (Metal Oxide) | 600V | 32A | 10V | 4.5V @ 8mA | 325nC @ 10V | 9000pF @ 25V | ±20V | - | 520W (Tc) | 250 mOhm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227B | SOT-227-4, miniBLOC |
||
EPC |
TRANS GAN 200V 22A BUMPED DIE
|
封装: Die |
库存4,864 |
|
GaNFET (Gallium Nitride) | 200V | 22A (Ta) | 5V | 2.5V @ 3mA | 3.7nC @ 5V | 380pF @ 100V | +6V, -4V | - | - | 25 mOhm @ 12A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die Outline (7-Solder Bar) | Die |
||
Rohm Semiconductor |
MOSFET N-CH 250V 12A TO-220FM
|
封装: TO-220-2 Full Pack |
库存16,992 |
|
MOSFET (Metal Oxide) | 250V | 12A (Ta) | 10V | - | - | - | ±30V | - | 2.23W (Ta), 40W (Tc) | - | 150°C (TJ) | Through Hole | TO-220FM | TO-220-2 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 55V 12A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存15,288 |
|
MOSFET (Metal Oxide) | 55V | 12A (Tc) | 10V | 4V @ 250µA | 19nC @ 10V | 350pF @ 25V | ±20V | - | 3.8W (Ta), 45W (Tc) | 175 mOhm @ 7.2A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
STMicroelectronics |
MOSFET N-CH 620V 2.7A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,232 |
|
MOSFET (Metal Oxide) | 620V | 2.7A (Tc) | 10V | 4.5V @ 50µA | 13nC @ 10V | 385pF @ 25V | ±30V | - | 45W (Tc) | 2.5 Ohm @ 1.4A, 10V | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 250V 4.4A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存143,760 |
|
MOSFET (Metal Oxide) | 250V | 4.4A (Tc) | 10V | 5V @ 250µA | 8.5nC @ 10V | 300pF @ 25V | ±30V | - | 2.5W (Ta), 45W (Tc) | 1 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET N-CH 250V 15A TO-247AC
|
封装: TO-247-3 |
库存6,372 |
|
MOSFET (Metal Oxide) | 250V | 15A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1400pF @ 25V | ±20V | - | 150W (Tc) | 280 mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 600V 23.8A TO220
|
封装: TO-220-3 |
库存37,932 |
|
MOSFET (Metal Oxide) | 600V | 23.8A (Tc) | 10V | 3.5V @ 750µA | 75nC @ 10V | 1660pF @ 100V | ±20V | - | 176W (Tc) | 160 mOhm @ 11.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO-220-3 | TO-220-3 |
||
STMicroelectronics |
MOSFET N-CH 650V 17A TO-220
|
封装: TO-220-3 |
库存50,352 |
|
MOSFET (Metal Oxide) | 650V | 17A (Tc) | 10V | 5V @ 250µA | 50nC @ 10V | 1950pF @ 100V | ±25V | - | 125W (Tc) | 190 mOhm @ 8.5A, 10V | 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET P-CH 100V 0.075A SOT23-3
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存1,558,044 |
|
MOSFET (Metal Oxide) | 100V | 75mA (Ta) | 10V | 3.5V @ 1mA | - | 50pF @ 25V | ±20V | - | 330mW (Ta) | 20 Ohm @ 150mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-3 | TO-236-3, SC-59, SOT-23-3 |
||
Vishay Siliconix |
MOSFET P-CH 20V 1.4A SC70
|
封装: SC-70, SOT-323 |
库存549,096 |
|
MOSFET (Metal Oxide) | 20V | 1.4A (Tc) | 1.8V, 4.5V | 800mV @ 250µA | 6.5nC @ 4.5V | 272pF @ 10V | ±8V | - | 400mW (Ta), 500mW (Tc) | 150 mOhm @ 1.4A, 4.5V | -50°C ~ 150°C (TJ) | Surface Mount | SOT-323 | SC-70, SOT-323 |
||
Central Semiconductor Corp |
MOSFET P-CH 40V 6A DIE
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 40 V | 6A (Ta) | - | 3V @ 250µA | 6.5 nC @ 4.5 V | 750 pF @ 25 V | ±25V | - | - | 65mOhm @ 6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Die | Die |
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Vishay Siliconix |
P-CHANNEL 40 V (D-S) MOSFET POWE
|
封装: - |
库存18,000 |
|
MOSFET (Metal Oxide) | 40 V | 17.2A (Ta), 59.2A (Tc) | 4.5V, 10V | 2.3V @ 250µA | 126 nC @ 10 V | 5670 pF @ 20 V | ±20V | - | 4.8W (Ta), 56.8W (Tc) | 9mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S |
||
onsemi |
MOSFET N-CH 30V 22A/106A 5DFN
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET N-CH 500V 18.5A TO220-3
|
封装: - |
库存2,952 |
|
MOSFET (Metal Oxide) | 500 V | 18.5A (Tc) | 13V | 3.5V @ 510µA | 47.2 nC @ 10 V | 1137 pF @ 100 V | ±20V | - | 127W (Tc) | 190mOhm @ 6.2A, 13V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220-3 | TO-220-3 |
||
onsemi |
MOSFET N-CH 30V 10.2A 8SOIC
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 30 V | 10.2A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 26 nC @ 10 V | 897 pF @ 15 V | ±20V | - | 2.5W (Ta) | 14mOhm @ 10.2A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC | 8-SOIC (0.154", 3.90mm Width) |
||
onsemi |
POWER MOSFET, 150V SINGLE N CHAN
|
封装: - |
库存1,086 |
|
MOSFET (Metal Oxide) | 150 V | 7.3A (Ta), 41.9A (Tc) | 8V, 10V | 4.5V @ 100µA | 17 nC @ 10 V | 1315 pF @ 75 V | ±20V | - | 2.5W (Ta), 80.6W (Tc) | 22mOhm @ 18A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PQFN (5x6) | 8-PowerTDFN |
||
Diotec Semiconductor |
MOSFET, POWERQFN 3X3, -40V, -40A
|
封装: - |
库存14,970 |
|
MOSFET (Metal Oxide) | 40 V | 40A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 59 nC @ 10 V | 3538 pF @ 20 V | ±20V | - | 22.7W (Tc) | 15mOhm @ 10A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-QFN (3x3) | 8-PowerVDFN |
||
Toshiba Semiconductor and Storage |
MOSFET P-CHANNEL 12V 4.8A ES6
|
封装: - |
库存2,400 |
|
MOSFET (Metal Oxide) | 12 V | 4.8A (Ta) | 1.5V, 4.5V | 1V @ 1mA | 12.7 nC @ 4.5 V | 1040 pF @ 12 V | ±8V | - | 700mW (Ta) | 32mOhm @ 3.5A, 4.5V | 150°C | Surface Mount | ES6 | SOT-563, SOT-666 |
||
GeneSiC Semiconductor |
SIC MOSFET N-CH 71A TO247-4
|
封装: - |
库存2,850 |
|
SiCFET (Silicon Carbide) | 1200 V | 71A (Tc) | 15V | 2.69V @ 10mA | 106 nC @ 15 V | 2929 pF @ 800 V | ±15V | - | 333W (Tc) | 48mOhm @ 35A, 15V | -55°C ~ 175°C (TJ) | Through Hole | TO-247-4 | TO-247-4 |
||
Panjit International Inc. |
100V/ 7.4M/ EXCELLECT LOW FOM MO
|
封装: - |
库存18,000 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Infineon Technologies |
MOSFET P-CH 20V 3.7A SOT23
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 20 V | 3.7A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 12 nC @ 5 V | 633 pF @ 10 V | ±12V | - | 1.3W (Ta) | 65mOhm @ 3.7A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | Micro3™/SOT-23 | TO-236-3, SC-59, SOT-23-3 |
||
Alpha & Omega Semiconductor Inc. |
N
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 150 V | 6.2A (Ta), 19A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 20 nC @ 10 V | 675 pF @ 75 V | ±20V | - | 5W (Ta), 48W (Tc) | 58mOhm @ 5A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-DFN (5x6) | 8-PowerSMD, Flat Leads |
||
Vishay Siliconix |
MOSFET N-CH 60V 6.3A 1212-8
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 60 V | 6.3A (Ta) | - | 3.5V @ 250µA | 45 nC @ 10 V | - | - | - | - | 19mOhm @ 10A, 10V | - | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 |
||
IXYS |
MOSFET N-CH 650V 18A TO263
|
封装: - |
Request a Quote |
|
MOSFET (Metal Oxide) | 650 V | 18A (Tc) | 10V | 5V @ 1.5mA | 29 nC @ 10 V | 1520 pF @ 25 V | ±30V | - | 290W (Tc) | 200mOhm @ 9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D2PAK) | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
||
Renesas Electronics Corporation |
P-CHANNEL MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |