ISSI, Integrated Silicon Solution Inc 产品

IS42VM16800G-6BL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 166MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

IS42R32800J-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256M 133MHZ 90BGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IS49NLC36160-25B

ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT 400MHZ 144BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: DRAM
• Memory Size: 576Mb (16M x 36)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: -
• Access Time: 20ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-FCBGA (11x18.5)

封装: 144-TFBGA

IS42SM32800E-75BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 133MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS42S16100C1-6TL-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 166MHZ 50TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 16Mb (1M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.5ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 50-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 50-TSOP II

封装: 50-TSOP (0.400", 10.16mm Width)

IS61DDB21M18A-300B4L

ISSI, Integrated Silicon Solution Inc

IC SDRAM 18MBIT 300MHZ 165BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous, DDR II
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 300MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.71 V ~ 1.89 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-LBGA
• Supplier Device Package: 165-LFBGA (13x15)

封装: 165-LBGA

IS43LR32160C-6BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 166MHZ 90BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile DDR
• Memory Size: 512Mb (16M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 12ns
• Access Time: 5.5ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-TFBGA
• Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

IS43TR16128BL-15HBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 2GBIT 667MHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

IS45S16160G-7BLA1-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 256Mb (16M x 16)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-TFBGA
• Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

IS42S32400F-7TLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 128MBIT 143MHZ 86TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM
• Memory Size: 128Mb (4M x 32)
• Memory Interface: Parallel
• Clock Frequency: 143MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5.4ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 86-TFSOP (0.400", 10.16mm Width)
• Supplier Device Package: 86-TSOP II

封装: 86-TFSOP (0.400", 10.16mm Width)

IS64WV3216BLL-15CTLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 512KBIT 15NS 44TSOP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 512Kb (32K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 15ns
• Access Time: 15ns
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

IS61WV6416DBLL-10BLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 10NS 48BGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x8)

封装: 48-TFBGA

IS63WV1288DBLL-10JLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 10NS 32SOIC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (128K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10ns
• Voltage - Supply: 2.4 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-BSOJ (0.300", 7.62mm Width)
• Supplier Device Package: 32-SOJ

封装: 32-BSOJ (0.300", 7.62mm Width)

IS61WV6416BLL-12BLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 48MINIBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (64K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-miniBGA (6x8)

封装: 48-TFBGA

IS49FL004T-33VCE

ISSI, Integrated Silicon Solution Inc

IC FLASH 4MBIT 33MHZ 32VSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: 33MHz
• Write Cycle Time - Word, Page: -
• Access Time: 120ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-TFSOP (0.488", 12.40mm Width)
• Supplier Device Package: 32-VSOP

封装: 32-TFSOP (0.488", 12.40mm Width)

IS43TR16640BL-125JBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 96BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 800MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

IS61C1024AL-12KLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 32SOJ

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 1Mb (128K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 12ns
• Access Time: 12ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 32-BSOJ (0.400", 10.16mm Width)
• Supplier Device Package: 32-SOJ

封装: 32-BSOJ (0.400", 10.16mm Width)

IS46TR16640B-15GBLA2-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1G PARALLEL 667MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3
• Memory Size: 1Gb (64M x 16)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20ns
• Voltage - Supply: 1.425 V ~ 1.575 V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

IS61LPS12836EC-200B3LI

ISSI, Integrated Silicon Solution Inc

IC SRAM 4.5M PARALLEL 200MHZ

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 4.5Mb (128K x 36)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TFBGA
• Supplier Device Package: 165-TFBGA (13x15)

封装: 165-TFBGA

IS43R16320E-6BLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 60-TFBGA
• Supplier Device Package: 60-TFBGA (13x8)

封装: 60-TFBGA

IS43DR16320E-25DBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 84TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 512Mb (32M x 16)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ns
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 84-TFBGA
• Supplier Device Package: 84-TWBGA (8x12.5)

封装: 84-TFBGA

IS61NVP102418-200TQLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 18M PARALLEL 100LQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Synchronous
• Memory Size: 18Mb (1M x 18)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.1ns
• Voltage - Supply: 2.375 V ~ 2.625 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-LQFP (14x20)

封装: 100-LQFP

IS43R32800D-5BI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 256M PARALLEL 144LFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (8M x 32)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.3 V ~ 2.7 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 144-LFBGA
• Supplier Device Package: 144-LFBGA (12x12)

封装: 144-LFBGA

IS64WV102416FBLL-10CTLA3

ISSI, Integrated Silicon Solution Inc

16Mb,High-Speed-Automotive,Async

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 16Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 10ns
• Access Time: 10 ns
• Voltage - Supply: 2.4V ~ 3.6V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: -

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IS46LQ32128A-062TBLA1

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +95C), 4G

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 4Gbit
• Memory Interface: LVSTL
• Clock Frequency: 1.6 GHz
• Write Cycle Time - Word, Page: 18ns
• Access Time: 3.5 ns
• Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-VFBGA
• Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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IS43TR82560DL-125KBLI-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 78TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gbit
• Memory Interface: Parallel
• Clock Frequency: 800 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-TWBGA (8x10.5)

封装: -

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IS49NLS96400A-25EWBL

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 576Mbit, x9, Sep

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: RLDRAM 2
• Memory Size: 576Mbit
• Memory Interface: HSTL
• Clock Frequency: 400 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 15 ns
• Voltage - Supply: 1.7V ~ 1.9V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 144-TFBGA
• Supplier Device Package: 144-TWBGA (11x18.5)

封装: -

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IS43TR81280CL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 78TWBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 1Gbit
• Memory Interface: Parallel
• Clock Frequency: 933 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 78-TFBGA
• Supplier Device Package: 78-TWBGA (8x10.5)

封装: -

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IS62WV25616EBLL-55TLI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT PARALLEL 44TSOP II

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Asynchronous
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 55ns
• Access Time: 55 ns
• Voltage - Supply: 2.2V ~ 3.6V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 44-TSOP (0.400", 10.16mm Width)
• Supplier Device Package: 44-TSOP II

封装: -

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IS46TR16128DL-107MBLA2

ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 2

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gbit
• Memory Interface: Parallel
• Clock Frequency: 933 MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 20 ns
• Voltage - Supply: 1.283V ~ 1.45V
• Operating Temperature: -40°C ~ 105°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-TWBGA (9x13)

封装: -

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