Infineon Technologies 产品

IRGB4060DPBF

Infineon Technologies

IGBT 600V 16A 99W TO220AB

• IGBT Type: Trench
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 16A
• Current - Collector Pulsed (Icm): 32A
• Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 8A
• Power - Max: 99W
• Switching Energy: 70µJ (on), 145µJ (off)
• Input Type: Standard
• Gate Charge: 19nC
• Td (on/off) @ 25°C: 30ns/95ns
• Test Condition: 400V, 8A, 47 Ohm, 15V
• Reverse Recovery Time (trr): 60ns
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IRF9332PBF

Infineon Technologies

MOSFET P-CH 30V 9.8A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 9.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta)
• Rds On (Max) @ Id, Vgs: 17.5 mOhm @ 9.8A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRLR7807ZCTRRP

Infineon Technologies

MOSFET N-CH 30V 43A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 40W (Tc)
• Rds On (Max) @ Id, Vgs: 13.8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BSS123L6327HTSA1

Infineon Technologies

MOSFET N-CH 100V 170MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 50µA
• Gate Charge (Qg) (Max) @ Vgs: 2.67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 69pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360mW (Ta)
• Rds On (Max) @ Id, Vgs: 6 Ohm @ 170mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-SOT23-3
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

IPW65R150CFDAFKSA1

Infineon Technologies

MOSFET N-CH 650V TO247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 22.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 900µA
• Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2340pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 195.3W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 9.3A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO247-3
• Package / Case: TO-247-3

封装: TO-247-3

IPI086N10N3GXKSA1

Infineon Technologies

MOSFET N-CH 100V 80A TO262-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 75µA
• Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 8.6 mOhm @ 73A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFI1310NPBF

Infineon Technologies

MOSFET N-CH 100V 24A TO220FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 56W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 13A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB Full-Pak
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

BDP950E6327HTSA1

Infineon Technologies

TRANS PNP 60V 3A SOT-223

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 3A
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
• Current - Collector Cutoff (Max): 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
• Power - Max: 5W
• Frequency - Transition: 100MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

BAS7006WE6327HTSA1

Infineon Technologies

DIODE ARRAY SCHOTTKY 70V SOT323

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 70V
• Current - Average Rectified (Io) (per Diode): 70mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 100ps
• Current - Reverse Leakage @ Vr: 100nA @ 50V
• Operating Temperature - Junction: 150°C (Max)
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: PG-SOT323-3

封装: SC-70, SOT-323

TLE4264G

Infineon Technologies

IC REG LINEAR 5V 120MA SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 45V
• Voltage - Output (Min/Fixed): 5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.5V @ 100mA
• Current - Output: 120mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 400µA ~ 15mA
• PSRR: 54dB (100Hz)
• Control Features: -
• Protection Features: Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

封装: TO-261-4, TO-261AA

ITS621L1HKSA1

Infineon Technologies

IC SWITCH HISIDE SMART TO220-7

• Switch Type: General Purpose
• Number of Outputs: 2
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5 V ~ 34 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3.5A
• Rds On (Typ): 80 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart, Status Flag
• Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
• Operating Temperature: -30°C ~ 85°C (TA)
• Package / Case: TO-220-7 (Formed Leads)
• Supplier Device Package: TO-220AB/7

封装: TO-220-7 (Formed Leads)

IRSM506-076PA

Infineon Technologies

IC MOTOR DRIVER 23SOP

• Output Configuration: Half Bridge (3)
• Applications: AC Motors
• Interface: Logic
• Load Type: Inductive
• Technology: IGBT
• Rds On (Typ): -
• Current - Output / Channel: 4A
• Current - Peak Output: 15A
• Voltage - Supply: 13.5 V ~ 16.5 V
• Voltage - Load: 480V (Max)
• Operating Temperature: -40°C ~ 150°C (TJ)
• Features: Bootstrap Circuit
• Fault Protection: UVLO
• Mounting Type: Surface Mount
• Package / Case: 32-PowerSMD Module, 23 Leads
• Supplier Device Package: 23-SOP

封装: 32-PowerSMD Module, 23 Leads

ICE3RBR4765JZXKLA1

Infineon Technologies

IC OFFLINE CTRLR SMPS CM DIP7

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 25 V
• Duty Cycle: 75%
• Frequency - Switching: 65kHz
• Power (Watts): 26W
• Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 130°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
• Supplier Device Package: PG-DIP-7
• Mounting Type: Through Hole

封装: 8-DIP (0.300", 7.62mm), 7 Leads

SAK-CIC751-EOM16T BA

Infineon Technologies

IC COMPANION ICS TSSOP-38-1

• Applications: Automotive
• Interface: SPI Serial
• Voltage - Supply: 5V
• Package / Case: 38-TFSOP (0.173", 4.40mm Width)
• Supplier Device Package: P-TSSOP-38
• Mounting Type: Surface Mount

封装: 38-TFSOP (0.173", 4.40mm Width)

ADM3120BX-AB-T-2-G

Infineon Technologies

IC NETWORK CTRLR SOC 225-LFBGA

• Protocol: -
• Function: -
• Interface: -
• Standards: -
• Voltage - Supply: 1.8V, 3.3V
• Current - Supply: -
• Operating Temperature: -
• Package / Case: 225-LFBGA
• Supplier Device Package: PG-LFBGA-225

封装: 225-LFBGA

C167CRL33MHAKXUMA2

Infineon Technologies

IC MCU 16BIT ROMLESS 144MQFP

• Core Processor: C166
• Core Size: 16-Bit
• Speed: 33MHz
• Connectivity: CAN, EBI/EMI, SPI, UART/USART
• Peripherals: POR, PWM, WDT
• Number of I/O: 113
• Program Memory Size: -
• Program Memory Type: ROMless
• EEPROM Size: -
• RAM Size: 4K x 8
• Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
• Data Converters: A/D 16x10b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 144-BQFP
• Supplier Device Package: PG-MQFP-144

封装: 144-BQFP

CHL8326-02CRT

Infineon Technologies

IC REG BUCK 48VQFN

• Output Type: -
• Function: -
• Output Configuration: -
• Topology: -
• Number of Outputs: -
• Output Phases: -
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: -
• Clock Sync: -
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IRFU2405PBFAKLA1

Infineon Technologies

MOSFET N-CH

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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TT122N18KOFHPSA1

Infineon Technologies

SCR MODULE 1.8KV 160A MODULE

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1.8 kV
• Current - On State (It (AV)) (Max): 104 A
• Current - On State (It (RMS)) (Max): 160 A
• Voltage - Gate Trigger (Vgt) (Max): 1.4 V
• Current - Gate Trigger (Igt) (Max): 120 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 1050A @ 50Hz
• Current - Hold (Ih) (Max): 200 mA
• Operating Temperature: -40°C ~ 140°C
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

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TD320N16SOFHPSA1

Infineon Technologies

THYRISTOR MODULE 1600V 320A

• Structure: Series Connection - SCR/Diode
• Number of SCRs, Diodes: 1 SCR, 1 Diode
• Voltage - Off State: 1.6 kV
• Current - On State (It (AV)) (Max): 320 A
• Current - On State (It (RMS)) (Max): 520 A
• Voltage - Gate Trigger (Vgt) (Max): 2 V
• Current - Gate Trigger (Igt) (Max): 150 mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• Current - Hold (Ih) (Max): 150 mA
• Operating Temperature: 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module

封装: -

D711N65TXPSA1

Infineon Technologies

DIODE GEN PURP 6.5KV 1070A

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 6500 V
• Current - Average Rectified (Io): 1070A
• Voltage - Forward (Vf) (Max) @ If: 1.9 V @ 1200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 mA @ 6500 V
• Capacitance @ Vr, F: -
• Mounting Type: Clamp On
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: -
• Operating Temperature - Junction: -40°C ~ 160°C

封装: -

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FS200R12N3T7BPSA1

Infineon Technologies

LOW POWER ECONO AG-ECONO3-4

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 200 A
• Power - Max: 20 mW
• Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 200A
• Current - Collector Cutoff (Max): 16 µA
• Input Capacitance (Cies) @ Vce: 40.3 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: AG-ECONO3B

封装: -

CY27410LTXI-013T

Infineon Technologies

IC SS CLOCK GENERATOR 48QFN

• Type: Spread Spectrum Clock Generator
• PLL: Yes with Bypass
• Input: LVCMOS, Crystal
• Output: CML, HCSL, LVCMOS, LVDS, LVPECL
• Number of Circuits: 1
• Ratio - Input:Output: 3:12
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 700MHz
• Divider/Multiplier: Yes/No
• Voltage - Supply: 1.71V ~ 3.46V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 48-VFQFN Exposed Pad
• Supplier Device Package: 48-QFN (7x7)

封装: -

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BSM200GD60DLCBOSA1

Infineon Technologies

IGBT MOD 600V 226A 700W

• IGBT Type: -
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 226 A
• Power - Max: 700 W
• Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 200A
• Current - Collector Cutoff (Max): 500 µA
• Input Capacitance (Cies) @ Vce: 9 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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IAUCN04S6N007TATMA1

Infineon Technologies

MOSFET_(20V 40V)

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

IPD25DP06LMSAUMA1

Infineon Technologies

MOSFET P-CH 60V 6.5A TO252-3

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 28W (Tc)
• Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3-313
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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AIDK10S65C5ATMA1

Infineon Technologies

DISCRETE DIODES

• Diode Type: SiC (Silicon Carbide) Schottky
• Voltage - DC Reverse (Vr) (Max): 650 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
• Speed: No Recovery Time > 500mA (Io)
• Reverse Recovery Time (trr): 0 ns
• Current - Reverse Leakage @ Vr: 60 µA @ 650 V
• Capacitance @ Vr, F: 303pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
• Supplier Device Package: PG-TO263-2
• Operating Temperature - Junction: -40°C ~ 175°C

封装: -

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CY9AFA44LAQN-G-AVE2

Infineon Technologies

MULTI-MARKET MCUS

• Core Processor: ARM® Cortex®-M3
• Core Size: 32-Bit
• Speed: 40MHz
• Connectivity: CSIO, I2C, UART/USART
• Peripherals: DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 51
• Program Memory Size: 288KB (288K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
• Data Converters: A/D 12x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-VFQFN Exposed Pad
• Supplier Device Package: 64-QFN (9x9)

封装: -

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S80KS5123GABHB020

Infineon Technologies

IC PSRAM 512MBIT SPI/OCTL 24FBGA

• Memory Type: Volatile
• Memory Format: PSRAM
• Technology: PSRAM (Pseudo SRAM)
• Memory Size: 512Mbit
• Memory Interface: SPI - Octal I/O
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: 35ns
• Access Time: 35 ns
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-VBGA
• Supplier Device Package: 24-FBGA (6x8)

封装: -

IPA65R110CFDXKSA2

Infineon Technologies

MOSFET N-CH 650V 31.2A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 31.2A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 1.3mA
• Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3240 pF @ 100 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 34.7W (Tc)
• Rds On (Max) @ Id, Vgs: 110mOhm @ 12.7A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

封装: -

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