Infineon Technologies 产品

IRG4BC20U

Infineon Technologies

IGBT 600V 13A 60W TO220AB

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 600V
• Current - Collector (Ic) (Max): 13A
• Current - Collector Pulsed (Icm): 52A
• Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6.5A
• Power - Max: 60W
• Switching Energy: 100µJ (on), 120µJ (off)
• Input Type: Standard
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 21ns/86ns
• Test Condition: 480V, 6.5A, 50 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

IRG7CH44K10EF

Infineon Technologies

IGBT CHIP WAFER

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 25A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
• Power - Max: -
• Switching Energy: -
• Input Type: Standard
• Gate Charge: 160nC
• Td (on/off) @ 25°C: 60ns/230ns
• Test Condition: 600V, 25A, 10 Ohm, 15V
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: Die
• Supplier Device Package: Die

封装: Die

IRGS14C40LPBF

Infineon Technologies

IGBT 430V 20A 125W D2PAK

• IGBT Type: -
• Voltage - Collector Emitter Breakdown (Max): 430V
• Current - Collector (Ic) (Max): 20A
• Current - Collector Pulsed (Icm): -
• Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
• Power - Max: 125W
• Switching Energy: -
• Input Type: Logic
• Gate Charge: 27nC
• Td (on/off) @ 25°C: 900ns/6µs
• Test Condition: -
• Reverse Recovery Time (trr): -
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: D2PAK

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRL1404STRLPBF

Infineon Technologies

MOSFET N-CH 40V 160A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 4 mOhm @ 95A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IRFR13N20DTRLP

Infineon Technologies

MOSFET N-CH 200V 13A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 110W (Tc)
• Rds On (Max) @ Id, Vgs: 235 mOhm @ 8A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

BSZ060NE2LS

Infineon Technologies

MOSFET N-CH 25V 12A TSDSON-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 26W (Tc)
• Rds On (Max) @ Id, Vgs: 6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8-FL
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IPD80R450P7ATMA1

Infineon Technologies

MOSFET N-CH 800V 11A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 800V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 220µA
• Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 500V
• Vgs (Max): ±20V
• FET Feature: Super Junction
• Power Dissipation (Max): 73W (Tc)
• Rds On (Max) @ Id, Vgs: 450 mOhm @ 4.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRFH8334TRPBF

Infineon Technologies

MOSFET N-CH 30V 44A 5X6 PQFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.35V @ 25µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1180pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 30W (Tc)
• Rds On (Max) @ Id, Vgs: 9 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PQFN (5x6)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

BAT15099E6433HTMA1

Infineon Technologies

DIODE SCHOTTKY 4V 110MA SOT-143

• Diode Type: Schottky - 2 Independent
• Voltage - Peak Reverse (Max): 4V
• Current - Max: 110mA
• Capacitance @ Vr, F: 0.35pF @ 0V, 1MHz
• Resistance @ If, F: -
• Power Dissipation (Max): 100mW
• Operating Temperature: 150°C (TJ)
• Package / Case: TO-253-4, TO-253AA
• Supplier Device Package: PG-SOT143-4

封装: TO-253-4, TO-253AA

BA595E6327HTSA1

Infineon Technologies

DIODE RF SW 50V 50MA SOD-323

• Diode Type: PIN - Single
• Voltage - Peak Reverse (Max): 50V
• Current - Max: 50mA
• Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
• Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
• Power Dissipation (Max): -
• Operating Temperature: 150°C (TJ)
• Package / Case: SC-76, SOD-323
• Supplier Device Package: PG-SOD323-2

封装: SC-76, SOD-323

BAS4002S02LRHE6327XTSA1

Infineon Technologies

DIODE SCHOTTKY 40V 200MA TSLP-2

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 40V
• Capacitance @ Vr, F: 12pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2
• Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-882

IRS25751LTRPBF

Infineon Technologies

IC GATE DVR UHVIC 1CH SOT23-5

• Applications: High-Voltage Start-Up
• Current - Supply: -
• Voltage - Supply: 0 V ~ 480 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-23-5

封装: SC-74A, SOT-753

AUIPS7111STRL

Infineon Technologies

IC DVR CURRENT SENSE 1CH D2PAK-5

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 8 V ~ 50 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 10A
• Rds On (Typ): 6 mOhm
• Input Type: Non-Inverting
• Features: -
• Fault Protection: Current Limiting (Fixed), Over Temperature
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
• Supplier Device Package: D2PAK

封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB

IR2108

Infineon Technologies

IC DRIVER HALF BRIDGE 8DIP

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.9V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 150ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

IRS2336DJPBF

Infineon Technologies

IC DRIVER BRIDGE 3-PHASE 44-PLCC

• Driven Configuration: Half-Bridge
• Channel Type: 3-Phase
• Number of Drivers: 6
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 200mA, 350mA
• Input Type: Inverting
• High Side Voltage - Max (Bootstrap): 600V
• Rise / Fall Time (Typ): 125ns, 50ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 44-LCC (J-Lead), 32 Leads
• Supplier Device Package: 44-PLCC, 32 Leads (16.58x16.58)

封装: 44-LCC (J-Lead), 32 Leads

TLE7182EMXUMA1

Infineon Technologies

IC DRIVER N-BRIDGE 24SSOP

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 4
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 7 V ~ 34 V
• Logic Voltage - VIL, VIH: 1V, 2V
• Current - Peak Output (Source, Sink): -
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): 55V
• Rise / Fall Time (Typ): 250ns, 200ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad
• Supplier Device Package: PG-SSOP-24-4

封装: 24-LSSOP (0.154", 3.90mm Width) Exposed Pad

PEF 24911 H V2.2

Infineon Technologies

IC NETWORK TERMINATOR MQFP-64

• Function: Echo Cancellation
• Interface: IOM-2, ISDN
• Number of Circuits: 4
• Voltage - Supply: 3.3V
• Current - Supply: -
• Power (Watts): -
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 64-QFP
• Supplier Device Package: P-64-MQFP

封装: 64-QFP

XE167FH200F100LABFXUMA1

Infineon Technologies

IC MCU 16BIT 1.56MB FLSH 144LQFP

• Core Processor: C166SV2
• Core Size: 16-Bit
• Speed: 100MHz
• Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
• Peripherals: I2S, POR, PWM, WDT
• Number of I/O: 118
• Program Memory Size: 1.56MB (1.56M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 138K x 8
• Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
• Data Converters: A/D 24x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: 144-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-144-13

封装: 144-LQFP Exposed Pad

XMC4300F100K256AAXQMA1

Infineon Technologies

IC MCU 32BIT 256KB FLASH 100LQFP

• Core Processor: ARM? Cortex?-M4
• Core Size: 32-Bit
• Speed: 144MHz
• Connectivity: CAN, Ethernet, I2C, LIN, MMC/SD, SPI, UART/USART, USB OTG, USIC
• Peripherals: DMA, I2S, LED, POR, Touch-Sense, WDT
• Number of I/O: 73
• Program Memory Size: 256KB (256K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 128K x 8
• Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
• Data Converters: A/D 16x12b, D/A 2x12b
• Oscillator Type: External
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: -
• Package / Case: 100-LQFP Exposed Pad
• Supplier Device Package: PG-LQFP-100-25

封装: 100-LQFP Exposed Pad

SLB9635TT12FW316NOXUMA1

Infineon Technologies

SECURITY IC'S/AUTHENTICATION IC'

• Applications: Embedded Security Trusted Computing
• Core Processor: 16-Bit
• Program Memory Type: -
• Controller Series: -
• RAM Size: -
• Interface: LPC
• Number of I/O: 2
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

40060430

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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S6J329CKSPSE20000

Infineon Technologies

TRAVEO-55NM

• Core Processor: ARM® Cortex®-R5F
• Core Size: 32-Bit
• Speed: 240MHz
• Connectivity: CANbus, CSIO, Ethernet, I2C, LINbus, SPI, UART/USART
• Peripherals: DMA, I2S, LCD, LVD, POR, PWM, WDT
• Number of I/O: 120
• Program Memory Size: 2.0625MB (2.0625M x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 2.25K x 8
• Voltage - Supply (Vcc/Vdd): 1.15V ~ 5.5V
• Data Converters: A/D 50x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 208-LQFP Exposed Pad
• Supplier Device Package: 208-TEQFP (28x28)

封装: -

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IPP08CNE8NG

Infineon Technologies

N-CHANNEL POWER MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 85 V
• Current - Continuous Drain (Id) @ 25°C: 95A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 130µA
• Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6690 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 167W (Tc)
• Rds On (Max) @ Id, Vgs: 6.4mOhm @ 95A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

封装: -

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PEB2266HV2-2

Infineon Technologies

SICOFI TWO CHANNEL CODEC FILTER

• Type: -
• Data Interface: -
• Resolution (Bits): -
• Number of ADCs / DACs: -
• Sigma Delta: -
• S/N Ratio, ADCs / DACs (db) Typ: -
• Dynamic Range, ADCs / DACs (db) Typ: -
• Voltage - Supply, Analog: -
• Voltage - Supply, Digital: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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CG8888AM

Infineon Technologies

IC

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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TLE4274GSV25HTMA1

Infineon Technologies

IC REG LIN 2.5V 400MA SOT223-4

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 1
• Voltage - Input (Max): 40V
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 2V @ 300mA
• Current - Output: 400mA
• Current - Quiescent (Iq): 220 µA
• Current - Supply (Max): 30 mA
• PSRR: 60dB (100Hz)
• Control Features: -
• Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA
• Supplier Device Package: PG-SOT223-4

封装: -

IRLB3034PBFXKMA1

Infineon Technologies

TRENCH <= 40V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 10315 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.7mOhm @ 195A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: -

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GATELEAD1110008XPSA1

Infineon Technologies

HIGH POWER THYR / DIO

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

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S70FL01GSAGBAEC13

Infineon Technologies

STD SPI

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 1Gbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 133 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (8x6)

封装: -

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FS150R12KT4PBPSA1

Infineon Technologies

IGBT MODULE LOW PWR ECONO3-4

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

Request a Quote