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Infineon Technologies |
IGBT 600V 20A 150W PG-TO252-3
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 20A
- Current - Collector Pulsed (Icm): 30A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 10A
- Power - Max: 150W
- Switching Energy: 190µJ (on), 160µJ (off)
- Input Type: Standard
- Gate Charge: 64nC
- Td (on/off) @ 25°C: 12ns/168ns
- Test Condition: 400V, 10A, 26 Ohm, 15V
- Reverse Recovery Time (trr): 72ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: PG-TO252-3
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,864 |
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Infineon Technologies |
MOSFET N-CH 100V 67A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 83µA
- Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 12.4 mOhm @ 67A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,456 |
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Infineon Technologies |
MOSFET N-CH 25V 80A D2PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 94W (Tc)
- Rds On (Max) @ Id, Vgs: 4.6 mOhm @ 55A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO263-3-2
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,240 |
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Infineon Technologies |
MOSFET N-CH 30V 38A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 26nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 68W (Tc)
- Rds On (Max) @ Id, Vgs: 26 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存5,216 |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
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封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存67,800 |
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Infineon Technologies |
MOSFET N-CH 40V 160A D2PAK7
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 6930pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 330W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 160A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (7-Lead)
- Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB
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封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB |
库存296,940 |
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Infineon Technologies |
MOSFET N-CH 40V 375A
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 375A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 330nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 20082pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 341W (Tc)
- Rds On (Max) @ Id, Vgs: 0.59 mOhm @ 195A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: DIRECTFET L8
- Package / Case: DirectFET? Isometric L8
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封装: DirectFET? Isometric L8 |
库存3,408 |
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Infineon Technologies |
MOSFET N-CH 150V 5.1A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1647pF @ 75V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 43 mOhm @ 3.1A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存134,748 |
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Infineon Technologies |
MOSFET N-CH 600V TO247-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 219W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 11.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存7,856 |
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Infineon Technologies |
MOSFET N-CH 600V TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 960µA
- Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2660pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 219W (Tc)
- Rds On (Max) @ Id, Vgs: 125 mOhm @ 11.6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存12,060 |
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Infineon Technologies |
DIODE RF SW 50V 50MA SOD-323
- Diode Type: PIN - Single
- Voltage - Peak Reverse (Max): 50V
- Current - Max: 50mA
- Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
- Resistance @ If, F: 7 Ohm @ 10mA, 100MHz
- Power Dissipation (Max): -
- Operating Temperature: 150°C (TJ)
- Package / Case: SC-76, SOD-323
- Supplier Device Package: PG-SOD323-2
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封装: SC-76, SOD-323 |
库存4,208 |
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Infineon Technologies |
IC REG CTRLR DL BUCK PWM 40QFN
- Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
- Voltage - Input: 3.3V
- Number of Outputs: 2
- Voltage - Output: -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 40-VFQFN Exposed Pad
- Supplier Device Package: 40-QFN (5x5)
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封装: 40-VFQFN Exposed Pad |
库存2,592 |
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Infineon Technologies |
IC MOTOR DRIVER SPI 20DSO
- Motor Type - Stepper: -
- Motor Type - AC, DC: Brushed DC
- Function: Driver - Fully Integrated, Control and Power Stage
- Output Configuration: Half Bridge (2)
- Interface: SPI
- Technology: CMOS
- Step Resolution: -
- Applications: General Purpose
- Current - Output: 5A
- Voltage - Supply: 5 V ~ 28 V
- Voltage - Load: 5 V ~ 28 V
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 20-PowerSOIC (0.433", 11.00mm Width)
- Supplier Device Package: PG-DSO-20-37
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封装: 20-PowerSOIC (0.433", 11.00mm Width) |
库存3,364,368 |
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Infineon Technologies |
IC TXRX HIGH-END LIN 8DSOP
- Type: Transceiver
- Protocol: LIN
- Number of Drivers/Receivers: 1/1
- Duplex: -
- Receiver Hysteresis: 120mV
- Data Rate: 20kbps
- Voltage - Supply: 5.5 V ~ 27 V
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: PG-DSO-8-16
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,424 |
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Infineon Technologies |
IC MCU 32BIT 256KB FLASH 100LQFP
- Core Processor: ARM? Cortex?-M4
- Core Size: 32-Bit
- Speed: 120MHz
- Connectivity: CAN, Ethernet, I2C, LIN, SPI, UART, USB
- Peripherals: DMA, I2S, LED, POR, PWM, WDT
- Number of I/O: 55
- Program Memory Size: 256KB (256K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 80K x 8
- Voltage - Supply (Vcc/Vdd): 3.13 V ~ 3.63 V
- Data Converters: A/D 24x12b, D/A 2x12b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 100-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-100-11
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封装: 100-LQFP Exposed Pad |
库存3,840 |
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Infineon Technologies |
IC SPEED SENSOR MAGN PG-SSO-3
- Type: -
- Technology: -
- Axis: -
- Output Type: -
- Sensing Range: -
- Voltage - Supply: -
- Current - Supply (Max): -
- Current - Output (Max): -
- Resolution: -
- Bandwidth: -
- Operating Temperature: -
- Features: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存2,070 |
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Infineon Technologies |
IC MCU 16BIT 128KB FLASH 100QFP
- Core Processor: F²MC-16LX
- Core Size: 16-Bit
- Speed: 24MHz
- Connectivity: EBI/EMI, I2C, LINbus, SCI, UART/USART
- Peripherals: DMA, POR, WDT
- Number of I/O: 82
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 6K x 8
- Voltage - Supply (Vcc/Vdd): 3.5V ~ 5.5V
- Data Converters: A/D 24x8/10b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-BQFP
- Supplier Device Package: 100-QFP (14x20)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC FRAM 8MBIT SPI 20MHZ 8GQFN
- Memory Type: Non-Volatile
- Memory Format: FRAM
- Technology: FRAM (Ferroelectric RAM)
- Memory Size: 8Mbit
- Memory Interface: SPI
- Clock Frequency: 20 MHz
- Write Cycle Time - Word, Page: -
- Access Time: 20 ns
- Voltage - Supply: 1.71V ~ 1.89V
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 8-UQFN
- Supplier Device Package: 8-GQFN (3.23x3.28)
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封装: - |
Request a Quote |
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Infineon Technologies |
OFF-LINE SMPS CURRENT MODE CONTR
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 18 V
- Voltage - Supply (Vcc/Vdd): 10.3V ~ 26V
- Duty Cycle: 75%
- Frequency - Switching: 67kHz
- Power (Watts): 22 W
- Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
- Control Features: Soft Start
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
- Mounting Type: Through Hole
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封装: - |
Request a Quote |
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Infineon Technologies |
TRENCH <= 40V PG-VSON-6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 15 V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 11W (Tc)
- Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-VSON-6-1
- Package / Case: 6-PowerVDFN
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封装: - |
Request a Quote |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT323
- Diode Configuration: 1 Pair Common Anode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80 V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4 ns
- Current - Reverse Leakage @ Vr: 150 nA @ 70 V
- Operating Temperature - Junction: 150°C
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封装: - |
Request a Quote |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 54
- Program Memory Size: 128KB (128K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10/16x12b SAR; D/A 2x7b
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 105°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
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封装: - |
Request a Quote |
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Infineon Technologies |
IC MCU 32BIT 96KB FLASH 96FBGA
- Core Processor: ARM® Cortex®-M3
- Core Size: 32-Bit
- Speed: 40MHz
- Connectivity: CSIO, EBI/EMI, I2C, UART/USART, USB
- Peripherals: DMA, LVD, POR, PWM, WDT
- Number of I/O: 66
- Program Memory Size: 96KB (96K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 16K x 8
- Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
- Data Converters: A/D 17x12b SAR
- Oscillator Type: External, Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 96-LFBGA
- Supplier Device Package: 96-FBGA (6x6)
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封装: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE LOW POWER ECONO
- IGBT Type: -
- Configuration: -
- Voltage - Collector Emitter Breakdown (Max): -
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: -
- NTC Thermistor: -
- Operating Temperature: -
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
Request a Quote |
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Infineon Technologies |
DIODE GEN PURP 650V 20A DIE
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 650 V
- Current - Average Rectified (Io): 20A
- Voltage - Forward (Vf) (Max) @ If: 1.87 V @ 20 A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 240 nA @ 650 V
- Capacitance @ Vr, F: -
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
- Operating Temperature - Junction: -40°C ~ 175°C
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封装: - |
Request a Quote |
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Infineon Technologies |
IGBT MODULE 1200V 50A
- IGBT Type: -
- Configuration: 3 Phase Inverter
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 80 A
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 50A
- Current - Collector Cutoff (Max): 500 µA
- Input Capacitance (Cies) @ Vce: 3.3 pF @ 25 V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: - |
Request a Quote |
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Infineon Technologies |
BSM300GB120 - INSULATED GATE BIP
- IGBT Type: -
- Configuration: 2 Independent
- Voltage - Collector Emitter Breakdown (Max): 1200 V
- Current - Collector (Ic) (Max): 625 A
- Power - Max: 2500 W
- Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 300A
- Current - Collector Cutoff (Max): 5 mA
- Input Capacitance (Cies) @ Vce: 21 nF @ 25 V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: - |
Request a Quote |
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Infineon Technologies |
PXE1610CDN - DIGITAL DUAL OUTPUT
- Applications: Controller, Intel VR12.5
- Voltage - Input: 3V ~ 3.6V
- Number of Outputs: 6
- Voltage - Output: Programmable
- Operating Temperature: -5°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 48-VFQFN Exposed Pad
- Supplier Device Package: 48-VQFN (6x6)
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封装: - |
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Infineon Technologies |
MOSFET 650V NCH SIC TRENCH
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Vgs(th) (Max) @ Id: 5.7V @ 3mA
- Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 18 V
- Input Capacitance (Ciss) (Max) @ Vds: 496 pF @ 400 V
- Vgs (Max): +23V, -5V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Rds On (Max) @ Id, Vgs: 142mOhm @ 8.9A, 18V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO247-3-41
- Package / Case: TO-247-3
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封装: - |
库存1,287 |
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Infineon Technologies |
PSOC4 - GENERAL
- Core Processor: ARM® Cortex®-M0+
- Core Size: 32-Bit
- Speed: 24MHz
- Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
- Peripherals: Brown-out Detect/Reset, CapSense, LCD, LVD, POR, PWM, WDT
- Number of I/O: 24
- Program Memory Size: 16KB (16K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 4K x 8
- Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
- Data Converters: A/D 16x10b, 12x12b SAR; D/A 2x7b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 28-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 28-SSOP
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封装: - |
Request a Quote |
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