Infineon Technologies 产品

IRG5K200HF12B

Infineon Technologies

MOD IGBT 1200V 200A POWIR 62

• IGBT Type: -
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200V
• Current - Collector (Ic) (Max): 400A
• Power - Max: 1250W
• Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 200A
• Current - Collector Cutoff (Max): 2mA
• Input Capacitance (Cies) @ Vce: 26nF @ 25V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POWIR? 62 Module
• Supplier Device Package: POWIR? 62

封装: POWIR? 62 Module

IRF7704TRPBF

Infineon Technologies

MOSFET P-CH 40V 4.6A 8-TSSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 38nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 3150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 46 mOhm @ 4.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

封装: 8-TSSOP (0.173", 4.40mm Width)

IRFZ46ZSPBF

Infineon Technologies

MOSFET N-CH 55V 51A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1460pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 82W (Tc)
• Rds On (Max) @ Id, Vgs: 13.6 mOhm @ 31A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPB407N30NATMA1

Infineon Technologies

MOSFET N-CH TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 300V
• Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 87nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 7180pF @ 100V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 44A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPP70N10SL16AKSA1

Infineon Technologies

MOSFET N-CH 100V 70A TO220-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 2mA
• Gate Charge (Qg) (Max) @ Vgs: 240nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4540pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 16 mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3-1
• Package / Case: TO-220-3

封装: TO-220-3

IRL2910STRLPBF

Infineon Technologies

MOSFET N-CH 100V 55A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 140nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 3700pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
• Rds On (Max) @ Id, Vgs: 26 mOhm @ 29A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IPD90N03S4L03ATMA1

Infineon Technologies

MOSFET N-CH 30V 90A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 45µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 94W (Tc)
• Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 90A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IRF5850TR

Infineon Technologies

MOSFET 2P-CH 20V 2.2A 6-TSOP

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.2A
• Rds On (Max) @ Id, Vgs: 135 mOhm @ 2.2A, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 15V
• Power - Max: 960mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: 6-TSOP

封装: SOT-23-6 Thin, TSOT-23-6

BCR108E6433HTMA1

Infineon Technologies

TRANS PREBIAS NPN 200MW SOT23-3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 2.2k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 100nA (ICBO)
• Frequency - Transition: 170MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

BFR 360F E6327

Infineon Technologies

TRANSISTOR RF NPN 6V TSFP-3

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 9V
• Frequency - Transition: 14GHz
• Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
• Gain: 15.5dB
• Power - Max: 210mW
• DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 15mA, 3V
• Current - Collector (Ic) (Max): 35mA
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: PG-TSFP-3

封装: SOT-723

BBY5202LE6327XTMA1

Infineon Technologies

DIODE TUNING 7V 20MA TSLP-2

• Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
• Capacitance Ratio: 2.1
• Capacitance Ratio Condition: C1/C4
• Voltage - Peak Reverse (Max): 7V
• Diode Type: Single
• Q @ Vr, F: -
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOD-882
• Supplier Device Package: PG-TSLP-2

封装: SOD-882

BAR 88-07LRH E6327

Infineon Technologies

DIODE PIN PAR 80V 100MA TSLP-4-7

• Diode Type: PIN - 2 Independent
• Voltage - Peak Reverse (Max): 80V
• Current - Max: 100mA
• Capacitance @ Vr, F: 0.4pF @ 1V, 1MHz
• Resistance @ If, F: 600 mOhm @ 10mA, 100MHz
• Power Dissipation (Max): 250mW
• Operating Temperature: 150°C (TJ)
• Package / Case: 4-XFDFN
• Supplier Device Package: PG-TSLP-4

封装: 4-XFDFN

BTS6144B

Infineon Technologies

IC SWITCH PWR HISIDE TO220-7 SMD

• Switch Type: General Purpose
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: N-Channel
• Interface: On/Off
• Voltage - Load: 5.5 V ~ 38 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 9.5A
• Rds On (Typ): 7 mOhm
• Input Type: Non-Inverting
• Features: Auto Restart
• Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
• Supplier Device Package: P-TO-220-7-180

封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA

AUIRS4428S

Infineon Technologies

IC DRIVER LOW SIDE DUAL 8SOIC

• Driven Configuration: Low-Side
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel, P-Channel MOSFET
• Voltage - Supply: 6 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.7V
• Current - Peak Output (Source, Sink): 2.3A, 3.3A
• Input Type: Inverting, Non-Inverting
• High Side Voltage - Max (Bootstrap): -
• Rise / Fall Time (Typ): 15ns, 25ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

IRS2004STRPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 8-SOIC

• Driven Configuration: Half-Bridge
• Channel Type: Synchronous
• Number of Drivers: 2
• Gate Type: IGBT, N-Channel MOSFET
• Voltage - Supply: 10 V ~ 20 V
• Logic Voltage - VIL, VIH: 0.8V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 200V
• Rise / Fall Time (Typ): 70ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

ICE2QR1765

Infineon Technologies

IC CRTLR SMPS QUASI-RESON 8DIP

• Output Isolation: Isolated
• Internal Switch(s): Yes
• Voltage - Breakdown: 650V
• Topology: Flyback
• Voltage - Start Up: 18V
• Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
• Duty Cycle: 50%
• Frequency - Switching: 52kHz
• Power (Watts): 56.4W
• Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
• Control Features: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Package / Case: 8-DIP (0.300", 7.62mm)
• Supplier Device Package: PG-DIP-8-6
• Mounting Type: Through Hole

封装: 8-DIP (0.300", 7.62mm)

IR3541MGB02TRP

Infineon Technologies

IC REGULATOR PG-VQFN-40-902

• Applications: Controller, DDR, Intel VR12, AMD SVI
• Voltage - Input: 3.3V
• Number of Outputs: 2
• Voltage - Output: -
• Operating Temperature: -20°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-VFQFN Exposed Pad
• Supplier Device Package: 40-QFN (6x6)

封装: 40-VFQFN Exposed Pad

TLE4274GSV33HTSA2

Infineon Technologies

IC REG LIN 3.3V 400MA SOT223-4

• Output Configuration: -
• Output Type: -
• Number of Regulators: -
• Voltage - Input (Max): -
• Voltage - Output (Min/Fixed): -
• Voltage - Output (Max): -
• Voltage Dropout (Max): -
• Current - Output: -
• Current - Quiescent (Iq): -
• Current - Supply (Max): -
• PSRR: -
• Control Features: -
• Protection Features: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

CY8C4149AZSS548XQLA1

Infineon Technologies

PSOC4 - GENERAL

• Core Processor: ARM® Cortex®-M0+
• Core Size: 32-Bit
• Speed: 48MHz
• Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
• Peripherals: Brown-out Detect/Reset, DMA, LCD, LVD, POR, PWM, WDT
• Number of I/O: 84
• Program Memory Size: 384KB (384K x 8)
• Program Memory Type: FLASH
• EEPROM Size: -
• RAM Size: 32K x 8
• Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
• Data Converters: A/D 16x12b SAR
• Oscillator Type: External, Internal
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x14)

封装: -

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S99-50539

Infineon Technologies

INFINEON

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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FS33MR12W1M1HB70BPSA1

Infineon Technologies

EASY STANDARD

• IGBT Type: -
• Configuration: -
• Voltage - Collector Emitter Breakdown (Max): -
• Current - Collector (Ic) (Max): -
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: -
• Current - Collector Cutoff (Max): -
• Input Capacitance (Cies) @ Vce: -
• Input: -
• NTC Thermistor: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

IQE004NE1LM7CGSCATMA1

Infineon Technologies

TRENCH <= 40V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 15 V
• Current - Continuous Drain (Id) @ 25°C: 58A (Ta), 379A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
• Vgs(th) (Max) @ Id: 2V @ 432µA
• Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 7 V
• Input Capacitance (Ciss) (Max) @ Vds: 6240 pF @ 7.5 V
• Vgs (Max): ±7V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 0.45mOhm @ 30A, 7V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-WHTFN-9
• Package / Case: 9-PowerWDFN

封装: -

IPA028N08N3GXKSA1

Infineon Technologies

MOSFET N-CH 80V 89A TO220-FP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.5V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 40 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 42W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8mOhm @ 89A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-FP
• Package / Case: TO-220-3 Full Pack

封装: -

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CYPET121XQMA1

Infineon Technologies

EZ-PD PAGXP-PAGXS PULSE EDGE TRA

• Output Type: PWM
• Function: -
• Output Configuration: Positive
• Topology: -
• Number of Outputs: 1
• Output Phases: 1
• Voltage - Supply (Vcc/Vdd): -
• Frequency - Switching: -
• Duty Cycle (Max): -
• Synchronous Rectifier: No
• Clock Sync: Yes
• Serial Interfaces: -
• Control Features: -
• Operating Temperature: -
• Package / Case: 4-DIP (0.315", 8.00mm)
• Supplier Device Package: -

封装: -

FP30R06W1E3BOMA1

Infineon Technologies

IGBT MODULE 600V 37A 115W

• IGBT Type: Trench Field Stop
• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (Max): 600 V
• Current - Collector (Ic) (Max): 37 A
• Power - Max: 115 W
• Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
• Current - Collector Cutoff (Max): 1 mA
• Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
• Input: Standard
• NTC Thermistor: Yes
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

FS50R12W2T7B11BOMA1

Infineon Technologies

IGBT MOD 1200V 50A

• IGBT Type: Trench Field Stop
• Configuration: Full Bridge
• Voltage - Collector Emitter Breakdown (Max): 1200 V
• Current - Collector (Ic) (Max): 50 A
• Power - Max: -
• Vce(on) (Max) @ Vge, Ic: 1.5V @ 15V, 50A (Typ)
• Current - Collector Cutoff (Max): 7.9 µA
• Input Capacitance (Cies) @ Vce: 11.1 nF @ 25 V
• Input: Standard
• NTC Thermistor: No
• Operating Temperature: -40°C ~ 175°C
• Mounting Type: Chassis Mount
• Package / Case: Module
• Supplier Device Package: Module

封装: -

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S25FL128SDPBHVC13

Infineon Technologies

STD SPI

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 128Mbit
• Memory Interface: SPI - Quad I/O
• Clock Frequency: 66 MHz
• Write Cycle Time - Word, Page: 750µs
• Access Time: 6.5 ns
• Voltage - Supply: 2.7V ~ 3.6V
• Operating Temperature: -40°C ~ 105°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-TBGA
• Supplier Device Package: 24-BGA (6x8)

封装: -

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BSB015N04NX3GXUMA1

Infineon Technologies

MOSFET N-CH 40V 36A/180A 2WDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5mOhm @ 30A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: MG-WDSON-2, CanPAK M™
• Package / Case: 3-WDSON

封装: -

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S25HS512TFAMHI013

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR (SLC)
• Memory Size: 512Mbit
• Memory Interface: SPI - Quad I/O, QPI
• Clock Frequency: 166 MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7V ~ 2V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 16-SOIC

封装: -

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D1721NH90TAOSA1

Infineon Technologies

DIODE GEN PURP 2160A D10026K-1

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): 2160A
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 150 mA @ 9000 V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200, Variant
• Supplier Device Package: BG-D10026K-1
• Operating Temperature - Junction: 0°C ~ 140°C

封装: -

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