页 1196 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S25FL064LABMFB011	Cypress Semiconductor Corp	IC FLASH NOR 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,376	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	108MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	-	-	-
W25Q64FVSSIP	Winbond Electronics	IC FLASH 64MBIT 104MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存3,184	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
CY7C1041DV33-10ZSXIT	Cypress Semiconductor Corp	IC SRAM 4MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存489,816	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS42S32800D-75EB-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: 90-TFBGA	库存4,768	DRAM	SDRAM	256Mb (8M x 32)	Parallel	133MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
M36P0R8060E0ZAQF TR	Micron Technology Inc.	IC FLASH PSRAM 320M Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,184	-	-	-	-	-	-	-	-	-	-	-	-
R1LV1616RSA-5SI#B0	Renesas Electronics America	IC SRAM 16MBIT 55NS 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 16Mb (2M x 8, 1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TSOP Supplier Device Package: 48-TSOP	封装: 48-TSOP	库存5,216	SRAM	SRAM	16Mb (2M x 8, 1M x 16)	Parallel	-	55ns	55ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TSOP	48-TSOP
AT24C04C-MAHM-T	Microchip Technology	IC EEPROM 4KBIT 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: 8-UFDFN Exposed Pad	库存42,540	EEPROM	EEPROM	4Kb (512 x 8)	I2C	1MHz	5ms	550ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
IDT71P71804S200BQG8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 200MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 7.88ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存5,136	SRAM	SRAM - Synchronous, DDR II	18Mb (1M x 18)	Parallel	200MHz	-	7.88ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
IS61NLF51236-7.5TQI-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存6,144	SRAM	SRAM - Synchronous	18Mb (512K x 36)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
DS1330ABP-70IND	Maxim Integrated	IC NVSRAM 256KBIT 70NS 34PCM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 34-PowerCap? Module Supplier Device Package: 34-PowerCap Module	封装: 34-PowerCap? Module	库存3,680	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	-40°C ~ 85°C (TA)	Surface Mount	34-PowerCap? Module	34-PowerCap Module
AT24C256W-10SI	Microchip Technology	IC EEPROM 256KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: 550ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存5,840	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	10ms	550ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
71342LA25JI	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 25NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封装: 52-LCC (J-Lead)	库存3,728	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
71V65603S133BQGI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存2,192	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
AT88SC0104CA-MJTG	Microchip Technology	IC EEPROM 1KBIT 4MHZ M2J Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 4MHz Write Cycle Time - Word, Page: 5ms Access Time: 250ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: M2 J, Smart Card Module (TWI) Supplier Device Package: M2 - J Module (TWI)	封装: M2 J, Smart Card Module (TWI)	库存4,240	EEPROM	EEPROM	1Kb (128 x 8)	I2C	4MHz	5ms	250ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	M2 J, Smart Card Module (TWI)	M2 - J Module (TWI)
IS43DR16320E-25DBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 400MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	封装: 84-TFBGA	库存6,588	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ns	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
MR4A16BMA35	Everspin Technologies Inc.	IC MRAM 16MBIT 35NS 48FBGA Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-LFBGA Supplier Device Package: 48-FBGA (10x10)	封装: 48-LFBGA	库存7,356	RAM	MRAM (Magnetoresistive RAM)	16Mb (1M x 16)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	48-LFBGA	48-FBGA (10x10)
24LC32A-I/ST	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存5,168	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
25LC1024-I/P	Microchip Technology	IC EEPROM 1MBIT 20MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Mb (128K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存8,964	EEPROM	EEPROM	1Mb (128K x 8)	SPI	20MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
S99GL128P10TFI010	Cypress Semiconductor Corp	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,072	-	-	-	-	-	-	-	-	-	-	-	-
IS43TR16128B-107MBLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 2G PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gb (128M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 195ps Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: 96-TFBGA	库存5,856	DRAM	SDRAM - DDR3	2Gb (128M x 16)	Parallel	933MHz	15ns	195ps	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
W631GG6KS15I	Winbond Electronics	IC SDRAM 1GBIT 96BGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,960	-	-	-	-	-	-	-	-	-	-	-	-
SM662GXC-BD	Silicon Motion, Inc.	IC FLASH 512GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	512Gbit	eMMC	-	-	-	-	-25°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
NSEC00K008-IT	Insignis Technology Corporation	IC FLASH 64GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 64Gbit Memory Interface: eMMC Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3.3V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封装: -	库存5,070	FLASH	FLASH - NAND (MLC)	64Gbit	eMMC	200 MHz	-	-	3.3V	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
MT62F2G32D4DS-023-FAAT-C-TR	Micron Technology Inc.	LPDDR5 64GBIT 32 315/315 TFBGA 4 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GS82582DT19GE-450I	GSI Technology Inc.	IC SRAM 288MBIT PAR 165FPBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Quad Port, Synchronous Memory Size: 288Mbit Memory Interface: Parallel Clock Frequency: 450 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 100°C (TJ) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FPBGA (15x17)	封装: -	Request a Quote	SRAM	SRAM - Quad Port, Synchronous	288Mbit	Parallel	450 MHz	-	-	1.7V ~ 1.9V	-40°C ~ 100°C (TJ)	Surface Mount	165-LBGA	165-FPBGA (15x17)
TH58BYG3S0HBAI6	Kioxia America, Inc.	IC FLASH 8GBIT 67VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 8Gbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 67-VFBGA Supplier Device Package: 67-VFBGA (6.5x8)	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	8Gbit	-	-	25ns	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	67-VFBGA	67-VFBGA (6.5x8)
S25FL132K0XBHIS2	Cypress Semiconductor Corp	IC FLASH 32MBIT SPI/QUAD 24BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 108 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	108 MHz	50µs, 3ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (6x8)
GD25Q128EBIRY	GigaDevice Semiconductor (HK) Limited	IC FLSH 128MBIT SPI/QUAD 24TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 70µs, 2.4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-TFBGA (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	128Mbit	SPI - Quad I/O	133 MHz	70µs, 2.4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-TFBGA (6x8)
AT25XE041D-SHN-B	Renesas Electronics Corporation	4 MBIT, WIDE VCC (1.65V TO 3.6V) Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 4ms, 30ms Access Time: 7 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Quad I/O	104 MHz	4ms, 30ms	7 ns	1.65V ~ 3.6V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
EMMC08G-MV28-01J10	Kingston Technology	LINEAR IC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

S25FL064LABMFB011

Cypress Semiconductor Corp

IC FLASH NOR 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,376

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

108MHz

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

-

W25Q64FVSSIP

Winbond Electronics

IC FLASH 64MBIT 104MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存3,184

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

CY7C1041DV33-10ZSXIT

Cypress Semiconductor Corp

IC SRAM 4MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存489,816

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS42S32800D-75EB-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: 90-TFBGA

库存4,768

DRAM

SDRAM

256Mb (8M x 32)

Parallel

133MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

M36P0R8060E0ZAQF TR

Micron Technology Inc.

IC FLASH PSRAM 320M

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,184

-

R1LV1616RSA-5SI#B0

Renesas Electronics America

IC SRAM 16MBIT 55NS 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 16Mb (2M x 8, 1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TSOP
Supplier Device Package: 48-TSOP

封装: 48-TSOP

库存5,216

SRAM

16Mb (2M x 8, 1M x 16)

Parallel

-

55ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TSOP

AT24C04C-MAHM-T

Microchip Technology

IC EEPROM 4KBIT 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: 8-UFDFN Exposed Pad

库存42,540

EEPROM

4Kb (512 x 8)

I2C

1MHz

5ms

550ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

IDT71P71804S200BQG8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 200MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 7.88ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存5,136

SRAM

SRAM - Synchronous, DDR II

18Mb (1M x 18)

Parallel

200MHz

-

7.88ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

IS61NLF51236-7.5TQI-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存6,144

SRAM

SRAM - Synchronous

18Mb (512K x 36)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

DS1330ABP-70IND

Maxim Integrated

IC NVSRAM 256KBIT 70NS 34PCM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap? Module
Supplier Device Package: 34-PowerCap Module

封装: 34-PowerCap? Module

库存3,680

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

70ns

4.75 V ~ 5.25 V

-40°C ~ 85°C (TA)

Surface Mount

34-PowerCap? Module

34-PowerCap Module

AT24C256W-10SI

Microchip Technology

IC EEPROM 256KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 550ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存5,840

EEPROM

256Kb (32K x 8)

I2C

1MHz

10ms

550ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

71342LA25JI

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封装: 52-LCC (J-Lead)

库存3,728

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

71V65603S133BQGI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存2,192

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

AT88SC0104CA-MJTG

Microchip Technology

IC EEPROM 1KBIT 4MHZ M2J

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 4MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 250ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: M2 J, Smart Card Module (TWI)
Supplier Device Package: M2 - J Module (TWI)

封装: M2 J, Smart Card Module (TWI)

库存4,240

EEPROM

1Kb (128 x 8)

I2C

4MHz

5ms

250ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

M2 J, Smart Card Module (TWI)

M2 - J Module (TWI)

IS43DR16320E-25DBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 400MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

封装: 84-TFBGA

库存6,588

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ns

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

MR4A16BMA35

Everspin Technologies Inc.

IC MRAM 16MBIT 35NS 48FBGA

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-LFBGA
Supplier Device Package: 48-FBGA (10x10)

封装: 48-LFBGA

库存7,356

RAM

MRAM (Magnetoresistive RAM)

16Mb (1M x 16)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

48-LFBGA

48-FBGA (10x10)

24LC32A-I/ST

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存5,168

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

25LC1024-I/P

Microchip Technology

IC EEPROM 1MBIT 20MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Mb (128K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存8,964

EEPROM

1Mb (128K x 8)

SPI

20MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

S99GL128P10TFI010

Cypress Semiconductor Corp

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,072

-

IS43TR16128B-107MBLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 2G PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gb (128M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 195ps
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

库存5,856

DRAM

SDRAM - DDR3

2Gb (128M x 16)

Parallel

933MHz

15ns

195ps

1.425 V ~ 1.575 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

W631GG6KS15I

Winbond Electronics

IC SDRAM 1GBIT 96BGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,960

-

SM662GXC-BD

Silicon Motion, Inc.

IC FLASH 512GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

512Gbit

eMMC

-

-25°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

NSEC00K008-IT

Insignis Technology Corporation

IC FLASH 64GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 64Gbit
Memory Interface: eMMC
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3.3V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封装: -

库存5,070

FLASH

FLASH - NAND (MLC)

64Gbit

eMMC

200 MHz

-

3.3V

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

MT62F2G32D4DS-023-FAAT-C-TR

Micron Technology Inc.

LPDDR5 64GBIT 32 315/315 TFBGA 4

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

GS82582DT19GE-450I

GSI Technology Inc.

IC SRAM 288MBIT PAR 165FPBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Quad Port, Synchronous
Memory Size: 288Mbit
Memory Interface: Parallel
Clock Frequency: 450 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 100°C (TJ)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FPBGA (15x17)

封装: -

Request a Quote

SRAM

SRAM - Quad Port, Synchronous

288Mbit

Parallel

450 MHz

-

1.7V ~ 1.9V

-40°C ~ 100°C (TJ)

Surface Mount

165-LBGA

165-FPBGA (15x17)

TH58BYG3S0HBAI6

Kioxia America, Inc.

IC FLASH 8GBIT 67VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 8Gbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 67-VFBGA
Supplier Device Package: 67-VFBGA (6.5x8)

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

8Gbit

-

25ns

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

67-VFBGA

67-VFBGA (6.5x8)

S25FL132K0XBHIS2

Cypress Semiconductor Corp

IC FLASH 32MBIT SPI/QUAD 24BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (6x8)

封装: -

Request a Quote

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

108 MHz

50µs, 3ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (6x8)

GD25Q128EBIRY

GigaDevice Semiconductor (HK) Limited

IC FLSH 128MBIT SPI/QUAD 24TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 70µs, 2.4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-TFBGA (6x8)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

128Mbit

SPI - Quad I/O

133 MHz

70µs, 2.4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-TFBGA (6x8)

AT25XE041D-SHN-B

Renesas Electronics Corporation

4 MBIT, WIDE VCC (1.65V TO 3.6V)

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 4ms, 30ms
Access Time: 7 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Quad I/O

104 MHz

4ms, 30ms

7 ns

1.65V ~ 3.6V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

EMMC08G-MV28-01J10

Kingston Technology

LINEAR IC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-