页 1301 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IDT71V67802S133PF8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,288	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V3556S166BGI8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 166MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存6,560	SRAM	SRAM - Synchronous ZBT	4.5Mb (128K x 36)	Parallel	166MHz	-	3.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IDT71P72804S167BQ8	IDT, Integrated Device Technology Inc	IC SRAM 18MBIT 167MHZ 165CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 8.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-TBGA Supplier Device Package: 165-CABGA (13x15)	封装: 165-TBGA	库存5,376	SRAM	SRAM - Synchronous, QDR II	18Mb (1M x 18)	Parallel	167MHz	-	8.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-TBGA	165-CABGA (13x15)
TE28F256P30B95A	Micron Technology Inc.	IC FLASH 256MBIT 95NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 40MHz Write Cycle Time - Word, Page: 95ns Access Time: 95ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封装: 56-TFSOP (0.724", 18.40mm Width)	库存5,360	FLASH	FLASH - NOR	256Mb (16M x 16)	Parallel	40MHz	95ns	95ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
AT49BV001NT-90VI	Microchip Technology	IC FLASH 1MBIT 90NS 32VSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	封装: 32-TFSOP (0.488", 12.40mm Width)	库存7,424	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
MTFC32GJDDQ-4M IT	Micron Technology Inc.	IC FLASH 256GBIT 100LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 256Gb (32G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	封装: 100-LBGA	库存5,024	FLASH	FLASH - NAND	256Gb (32G x 8)	MMC	-	-	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
70261L15PF8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 15NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (16K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存5,760	SRAM	SRAM - Dual Port, Asynchronous	256Kb (16K x 16)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY7C1145KV18-400BZXI	Cypress Semiconductor Corp	IC SRAM 18MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存4,368	SRAM	SRAM - Synchronous, QDR II+	18Mb (512K x 36)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
MT28HL04GABB1EPG-0GCT	Micron Technology Inc.	NOR FLASH 256MX16 PLASTIC 3.3V Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,616	-	-	-	-	-	-	-	-	-	-	-	-
71V321S35J	IDT, Integrated Device Technology Inc	IC SRAM 16KBIT 35NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封装: 52-LCC (J-Lead)	库存3,280	SRAM	SRAM - Dual Port, Asynchronous	16Kb (2K x 8)	Parallel	-	35ns	35ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
MT29RZ4B2DZZHHPS-18I.84F TR	Micron Technology Inc.	MASSFLASH/LPDDR2 6G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,920	-	-	-	-	-	-	-	-	-	-	-	-
W9812G6KH-5	Winbond Electronics	IC SDRAM 128MBIT 200MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 4.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存6,928	DRAM	SDRAM	128Mb (8M x 16)	Parallel	200MHz	-	4.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
25LC040A-E/MS	Microchip Technology	IC EEPROM 4KBIT 10MHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存5,712	EEPROM	EEPROM	4Kb (512 x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S25FL116K0XNFI011	Cypress Semiconductor Corp	IC FLASH 16MBIT 108MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 16Mb (2M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 108MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (5x6)	封装: 8-WDFN Exposed Pad	库存7,264	FLASH	FLASH - NOR	16Mb (2M x 8)	SPI - Quad I/O	108MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (5x6)
24AA01-I/P	Microchip Technology	IC EEPROM 1KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 3500ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存28,020	EEPROM	EEPROM	1Kb (128 x 8)	I2C	400kHz	5ms	3500ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
S29GL064S70TFI040	Cypress Semiconductor Corp	IC FLASH 64MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 70ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存3,872	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	60ns	70ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
AS7C32096A-10TIN	Alliance Memory, Inc.	IC SRAM 2MBIT 10NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存7,216	SRAM	SRAM - Asynchronous	2Mb (256K x 8)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AS4C8M16MSA-6BINTR	Alliance Memory, Inc.	IC DRAM 128M PARALLEL 54FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-VFBGA Supplier Device Package: 54-FBGA (8x8)	封装: 54-VFBGA	库存4,656	DRAM	SDRAM - Mobile	128Mb (8M x 16)	Parallel	166MHz	-	5ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	54-VFBGA	54-FBGA (8x8)
MT29TZZZ7D6EKKFB-107 W.96V	Micron Technology Inc.	MLC EMMC/LPDDR3 152G Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,280	-	-	-	-	-	-	-	-	-	-	-	-
MT29F4G16ABADAWP-AIT:D	Micron Technology Inc.	IC FLASH 4G PARALLEL TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存6,688	FLASH	FLASH - NAND	4Gb (256M x 16)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MT29F4G01ADAGDWB-IT:G	Micron Technology Inc.	IC FLASH 4G SPI UPDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (4G x 1) Memory Interface: SPI Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,760	FLASH	FLASH - NAND	4Gb (4G x 1)	SPI	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
S29GL032N90TFA040	Infineon Technologies	IC FLASH 32MBIT PARALLEL 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: -	Request a Quote	FLASH	FLASH - NOR	32Mbit	Parallel	-	90ns	90 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MX25UM25645GXDI00	Macronix	MEMORY Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 256Mbit Memory Interface: SPI - Octal I/O, DTR Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 60µs, 750µs Access Time: 5 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA, CSPBGA Supplier Device Package: 24-CSPBGA (6x8)	封装: -	库存630	FLASH	FLASH - NOR (SLC)	256Mbit	SPI - Octal I/O, DTR	200 MHz	60µs, 750µs	5 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA, CSPBGA	24-CSPBGA (6x8)
MT61M256M32KPA-14-AAT-C-TR	Micron Technology Inc.	IC DRAM 8GBIT PAR 180FBGA Memory Type: Volatile Memory Format: DRAM Technology: SGRAM - GDDR6 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 1.5 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.21V ~ 1.29V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 180-TFBGA Supplier Device Package: 180-FBGA (12x14)	封装: -	Request a Quote	DRAM	SGRAM - GDDR6	8Gbit	Parallel	1.5 GHz	-	-	1.21V ~ 1.29V	-40°C ~ 105°C (TC)	Surface Mount	180-TFBGA	180-FBGA (12x14)
S25HL01GTFABHI033	Infineon Technologies	IC FLASH 1GBIT SPI/QUAD 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-BGA (8x6)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	SPI - Quad I/O, QPI	166 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-BGA (8x6)
NDQ86PFI-6NIT	Insignis Technology Corporation	DDR4 8GB X16 FBGA 7.5X13 (X1.2) Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gbit Memory Interface: POD Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 15ns Access Time: 18 ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR4	8Gbit	POD	1.6 GHz	15ns	18 ns	1.14V ~ 1.26V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13)
IS25LP128-JMLE-TY	Ledil	IC FLASH 128MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mbit Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 40µs, 1ms Access Time: 7 ns Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR	128Mbit	SPI - Quad I/O, QPI, DTR	133 MHz	40µs, 1ms	7 ns	2.3V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
TMS55166-60DGH	Texas Instruments	VIDEO DRAM, 256KX16, 60NS PDSO64 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
HN58X25128FPIAG-S1	Renesas Electronics Corporation	SPI 128K EEPROM (16K X 8-BIT) Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
FM93C06EM8X	Fairchild Semiconductor	IC EEPROM 256BIT MICROWIRE 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256bit Memory Interface: Microwire Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	EEPROM	EEPROM	256bit	Microwire	1 MHz	10ms	-	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC

IDT71V67802S133PF8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,288

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V3556S166BGI8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 166MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存6,560

SRAM

SRAM - Synchronous ZBT

4.5Mb (128K x 36)

Parallel

166MHz

-

3.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IDT71P72804S167BQ8

IDT, Integrated Device Technology Inc

IC SRAM 18MBIT 167MHZ 165CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 8.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-TBGA
Supplier Device Package: 165-CABGA (13x15)

封装: 165-TBGA

库存5,376

SRAM

SRAM - Synchronous, QDR II

18Mb (1M x 18)

Parallel

167MHz

-

8.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-TBGA

165-CABGA (13x15)

TE28F256P30B95A

Micron Technology Inc.

IC FLASH 256MBIT 95NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 95ns
Access Time: 95ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

库存5,360

FLASH

FLASH - NOR

256Mb (16M x 16)

Parallel

40MHz

95ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

AT49BV001NT-90VI

Microchip Technology

IC FLASH 1MBIT 90NS 32VSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

封装: 32-TFSOP (0.488", 12.40mm Width)

库存7,424

FLASH

1Mb (128K x 8)

Parallel

-

50µs

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

MTFC32GJDDQ-4M IT

Micron Technology Inc.

IC FLASH 256GBIT 100LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 256Gb (32G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

封装: 100-LBGA

库存5,024

FLASH

FLASH - NAND

256Gb (32G x 8)

MMC

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

70261L15PF8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (16K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存5,760

SRAM

SRAM - Dual Port, Asynchronous

256Kb (16K x 16)

Parallel

-

15ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY7C1145KV18-400BZXI

Cypress Semiconductor Corp

IC SRAM 18MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存4,368

SRAM

SRAM - Synchronous, QDR II+

18Mb (512K x 36)

Parallel

400MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

MT28HL04GABB1EPG-0GCT

Micron Technology Inc.

NOR FLASH 256MX16 PLASTIC 3.3V

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,616

-

71V321S35J

IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 35NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封装: 52-LCC (J-Lead)

库存3,280

SRAM

SRAM - Dual Port, Asynchronous

16Kb (2K x 8)

Parallel

-

35ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

MT29RZ4B2DZZHHPS-18I.84F TR

Micron Technology Inc.

MASSFLASH/LPDDR2 6G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,920

-

W9812G6KH-5

Winbond Electronics

IC SDRAM 128MBIT 200MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 4.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存6,928

DRAM

SDRAM

128Mb (8M x 16)

Parallel

200MHz

-

4.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

25LC040A-E/MS

Microchip Technology

IC EEPROM 4KBIT 10MHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存5,712

EEPROM

4Kb (512 x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S25FL116K0XNFI011

Cypress Semiconductor Corp

IC FLASH 16MBIT 108MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 16Mb (2M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (5x6)

封装: 8-WDFN Exposed Pad

库存7,264

FLASH

FLASH - NOR

16Mb (2M x 8)

SPI - Quad I/O

108MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (5x6)

24AA01-I/P

Microchip Technology

IC EEPROM 1KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 3500ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存28,020

EEPROM

1Kb (128 x 8)

I2C

400kHz

5ms

3500ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

S29GL064S70TFI040

Cypress Semiconductor Corp

IC FLASH 64MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 70ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存3,872

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

60ns

70ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

AS7C32096A-10TIN

Alliance Memory, Inc.

IC SRAM 2MBIT 10NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存7,216

SRAM

SRAM - Asynchronous

2Mb (256K x 8)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AS4C8M16MSA-6BINTR

Alliance Memory, Inc.

IC DRAM 128M PARALLEL 54FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-VFBGA
Supplier Device Package: 54-FBGA (8x8)

封装: 54-VFBGA

库存4,656

DRAM

SDRAM - Mobile

128Mb (8M x 16)

Parallel

166MHz

-

5ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

54-VFBGA

54-FBGA (8x8)

MT29TZZZ7D6EKKFB-107 W.96V

Micron Technology Inc.

MLC EMMC/LPDDR3 152G

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,280

-

MT29F4G16ABADAWP-AIT:D

Micron Technology Inc.

IC FLASH 4G PARALLEL TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存6,688

FLASH

FLASH - NAND

4Gb (256M x 16)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MT29F4G01ADAGDWB-IT:G

Micron Technology Inc.

IC FLASH 4G SPI UPDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (4G x 1)
Memory Interface: SPI
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,760

FLASH

FLASH - NAND

4Gb (4G x 1)

SPI

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

S29GL032N90TFA040

Infineon Technologies

IC FLASH 32MBIT PARALLEL 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: -

Request a Quote

FLASH

FLASH - NOR

32Mbit

Parallel

-

90ns

90 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MX25UM25645GXDI00

Macronix

MEMORY

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 256Mbit
Memory Interface: SPI - Octal I/O, DTR
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 60µs, 750µs
Access Time: 5 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA, CSPBGA
Supplier Device Package: 24-CSPBGA (6x8)

封装: -

库存630

FLASH

FLASH - NOR (SLC)

256Mbit

SPI - Octal I/O, DTR

200 MHz

60µs, 750µs

5 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA, CSPBGA

24-CSPBGA (6x8)

MT61M256M32KPA-14-AAT-C-TR

Micron Technology Inc.

IC DRAM 8GBIT PAR 180FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SGRAM - GDDR6
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 1.5 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.21V ~ 1.29V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 180-TFBGA
Supplier Device Package: 180-FBGA (12x14)

封装: -

Request a Quote

DRAM

SGRAM - GDDR6

8Gbit

Parallel

1.5 GHz

-

1.21V ~ 1.29V

-40°C ~ 105°C (TC)

Surface Mount

180-TFBGA

180-FBGA (12x14)

S25HL01GTFABHI033

Infineon Technologies

IC FLASH 1GBIT SPI/QUAD 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-BGA (8x6)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

SPI - Quad I/O, QPI

166 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-BGA (8x6)

NDQ86PFI-6NIT

Insignis Technology Corporation

DDR4 8GB X16 FBGA 7.5X13 (X1.2)

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gbit
Memory Interface: POD
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 18 ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13)

封装: -

Request a Quote

DRAM

SDRAM - DDR4

8Gbit

POD

1.6 GHz

15ns

18 ns

1.14V ~ 1.26V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13)

IS25LP128-JMLE-TY

Ledil

IC FLASH 128MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 40µs, 1ms
Access Time: 7 ns
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR

128Mbit

SPI - Quad I/O, QPI, DTR

133 MHz

40µs, 1ms

7 ns

2.3V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

TMS55166-60DGH

Texas Instruments

VIDEO DRAM, 256KX16, 60NS PDSO64

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

HN58X25128FPIAG-S1

Renesas Electronics Corporation

SPI 128K EEPROM (16K X 8-BIT)

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

FM93C06EM8X

Fairchild Semiconductor

IC EEPROM 256BIT MICROWIRE 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256bit
Memory Interface: Microwire
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

EEPROM

256bit

Microwire

1 MHz

10ms

-

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC