页 1403 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S99FL132KBIS3	Cypress Semiconductor Corp	IC FLASH NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,584	-	-	-	-	-	-	-	-	-	-	-	-
CG8258AA	Cypress Semiconductor Corp	IC SRAM ASYNC 44TSOP II Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,352	-	-	-	-	-	-	-	-	-	-	-	-
M29F400FT55M32	Micron Technology Inc.	IC FLASH 4MBIT 55NS 44SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.496", 12.60mm Width) Supplier Device Package: 44-SO	封装: 44-SOIC (0.496", 12.60mm Width)	库存5,168	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	44-SOIC (0.496", 12.60mm Width)	44-SO
IS42S16320B-75ETLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存2,752	DRAM	SDRAM	512Mb (32M x 16)	Parallel	133MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AS4C256M8D3L-12BCN	Alliance Memory, Inc.	IC SDRAM 2GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存2,928	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
CAT28C16AWI20	ON Semiconductor	IC EEPROM 16KBIT 200NS 24SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-SOIC (0.295", 7.50mm Width) Supplier Device Package: 24-SOIC	封装: 24-SOIC (0.295", 7.50mm Width)	库存4,224	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	10ms	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	24-SOIC (0.295", 7.50mm Width)	24-SOIC
IDT71V67803S150PF8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存5,104	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CAT93C56YI-G	ON Semiconductor	IC EEPROM 2KBIT 2MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存7,072	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	-	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
MT46V16M16P-5B:F TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.5 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP	封装: 66-TSSOP (0.400", 10.16mm Width)	库存6,432	DRAM	SDRAM - DDR	256Mb (16M x 16)	Parallel	200MHz	15ns	700ps	2.5 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP
CY7C1347F-133AC	Cypress Semiconductor Corp	IC SRAM 4.5MBIT 133MHZ 100LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4ns Voltage - Supply: 3.15 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存12,360	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4ns	3.15 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT49LV002T-90TC	Microchip Technology	IC FLASH 2MBIT 90NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2Mb (256K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 90ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	封装: 32-TFSOP (0.724", 18.40mm Width)	库存5,856	FLASH	FLASH	2Mb (256K x 8)	Parallel	-	50µs	90ns	3 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
7007L25PF	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 25NS 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封装: 80-LQFP	库存2,336	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
71V65803S133BG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 133MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存4,240	SRAM	SRAM - Synchronous ZBT	9Mb (512K x 18)	Parallel	133MHz	-	4.2ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MTFC16GALAJEA-WT TR	Micron Technology Inc.	IC FLASH 128GBIT 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,312	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	-	-25°C ~ 85°C (TA)	-	-	-
IS43DR81280B-3DBLI-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 333MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 333MHz Write Cycle Time - Word, Page: 15ns Access Time: 450ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TWBGA (10.5x8)	封装: 60-TFBGA	库存2,560	DRAM	SDRAM - DDR2	1Gb (128M x 8)	Parallel	333MHz	15ns	450ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TWBGA (10.5x8)
AS4C128M8D3A-12BANTR	Alliance Memory, Inc.	IC SDRAM 1GBIT 800MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.425 V ~ 1.575 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (10.5x8)	封装: 78-VFBGA	库存5,328	DRAM	SDRAM - DDR3	1Gb (128M x 8)	Parallel	800MHz	15ns	20ns	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	Surface Mount	78-VFBGA	78-FBGA (10.5x8)
W988D2FBJX6I	Winbond Electronics	IC SDRAM 256MBIT 166MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 256Mb (8M x 32) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-VFBGA (8x13)	封装: 90-TFBGA	库存2,720	DRAM	SDRAM - Mobile LPSDR	256Mb (8M x 32)	Parallel	166MHz	15ns	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-VFBGA (8x13)
S29GL01GT10DHI020	Cypress Semiconductor Corp	IC FLASH 1GBIT 100NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	封装: 64-LBGA	库存6,264	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
BRCA016GWZ-WE2	Rohm Semiconductor	IC EEPROM 16KBIT 400KHZ 30UCSP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-XFBGA, CSPBGA Supplier Device Package: UCSP30L1	封装: 6-XFBGA, CSPBGA	库存25,944	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	-	1.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	6-XFBGA, CSPBGA	UCSP30L1
FT24C256A-USG-T	Fremont Micro Devices USA	IC EEPROM 256KBIT 1MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.154", 3.90mm Width)	库存23,430	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	5ms	550ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
93LC46B-I/WF15K	Microchip Technology	IC EEPROM 1K SPI 2MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存2,000	EEPROM	EEPROM	1Kb (64 x 16)	SPI	2MHz	6ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	Die	Die
7007L25PFI8	IDT, Integrated Device Technology Inc	IC SRAM 256K PARALLEL 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封装: 80-LQFP	库存4,032	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
GD25LD40EEIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 4MBIT SPI/DUAL 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 4Mbit Memory Interface: SPI - Dual I/O Clock Frequency: 50 MHz Write Cycle Time - Word, Page: 100µs, 6ms Access Time: 12 ns Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: 8-USON (3x2)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	4Mbit	SPI - Dual I/O	50 MHz	100µs, 6ms	12 ns	1.65V ~ 2V	-40°C ~ 85°C (TA)	Surface Mount	8-XFDFN Exposed Pad	8-USON (3x2)
W9812G6KB-6-TR	Winbond Electronics	IC DRAM 128MBIT LVTTL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	166 MHz	-	5 ns	3V ~ 3.6V	0°C ~ 70°C (TC)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
SM662GBC-BFST	Silicon Motion, Inc.	IC FLASH 512GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 512Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封装: -	库存15	FLASH	FLASH - NAND (TLC)	512Gbit	eMMC	-	-	-	-	-40°C ~ 105°C	Surface Mount	100-LBGA	100-BGA (14x18)
AS4C16M16SB-6BIN	Alliance Memory, Inc.	IC DRAM 256MBIT LVTTL 54TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mbit Memory Interface: LVTTL Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 12ns Access Time: 5 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: -	Request a Quote	DRAM	SDRAM	256Mbit	LVTTL	166 MHz	12ns	5 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
NM24C04ULM8X	Fairchild Semiconductor	IC EEPROM 4KBIT I2C 100KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 15ms Access Time: 3.5 µs Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	EEPROM	EEPROM	4Kbit	I2C	100 kHz	15ms	3.5 µs	2.7V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
MT62F1536M32D4DS-023-AIT-C	Micron Technology Inc.	LPDDR5 48GBIT 32 315/315 TFBGA 4 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5X Memory Size: 48Gbit Memory Interface: LVSTL Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.01V ~ 1.12V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 315-TFBGA Supplier Device Package: 315-TFBGA (12.4x15)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5X	48Gbit	LVSTL	4.266 GHz	-	-	1.01V ~ 1.12V	-40°C ~ 95°C (TC)	Surface Mount	315-TFBGA	315-TFBGA (12.4x15)
NM24C16LEN	Fairchild Semiconductor	IC EEPROM 16KBIT I2C 100KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 15ms Access Time: 3.5 µs Voltage - Supply: 2.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: -	Request a Quote	EEPROM	EEPROM	16Kbit	I2C	100 kHz	15ms	3.5 µs	2.7V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
MT62F1G128DAWA-031-XT-B-TR	Micron Technology Inc.	LPDDR5 128G 1GX128 FBGA 16DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

S99FL132KBIS3

Cypress Semiconductor Corp

IC FLASH NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,584

-

CG8258AA

Cypress Semiconductor Corp

IC SRAM ASYNC 44TSOP II

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,352

-

M29F400FT55M32

Micron Technology Inc.

IC FLASH 4MBIT 55NS 44SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.496", 12.60mm Width)
Supplier Device Package: 44-SO

封装: 44-SOIC (0.496", 12.60mm Width)

库存5,168

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

44-SOIC (0.496", 12.60mm Width)

44-SO

IS42S16320B-75ETLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存2,752

DRAM

SDRAM

512Mb (32M x 16)

Parallel

133MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AS4C256M8D3L-12BCN

Alliance Memory, Inc.

IC SDRAM 2GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存2,928

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

CAT28C16AWI20

ON Semiconductor

IC EEPROM 16KBIT 200NS 24SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 24-SOIC

封装: 24-SOIC (0.295", 7.50mm Width)

库存4,224

EEPROM

16Kb (2K x 8)

Parallel

-

10ms

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

24-SOIC (0.295", 7.50mm Width)

24-SOIC

IDT71V67803S150PF8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存5,104

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CAT93C56YI-G

ON Semiconductor

IC EEPROM 2KBIT 2MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存7,072

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

MT46V16M16P-5B:F TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

库存6,432

DRAM

SDRAM - DDR

256Mb (16M x 16)

Parallel

200MHz

15ns

700ps

2.5 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP

CY7C1347F-133AC

Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 100LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4ns
Voltage - Supply: 3.15 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存12,360

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4ns

3.15 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT49LV002T-90TC

Microchip Technology

IC FLASH 2MBIT 90NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2Mb (256K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 90ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

封装: 32-TFSOP (0.724", 18.40mm Width)

库存5,856

FLASH

2Mb (256K x 8)

Parallel

-

50µs

90ns

3 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

7007L25PF

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 25NS 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封装: 80-LQFP

库存2,336

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

71V65803S133BG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 133MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存4,240

SRAM

SRAM - Synchronous ZBT

9Mb (512K x 18)

Parallel

133MHz

-

4.2ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MTFC16GALAJEA-WT TR

Micron Technology Inc.

IC FLASH 128GBIT 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,312

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

-25°C ~ 85°C (TA)

-

IS43DR81280B-3DBLI-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 333MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 333MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TWBGA (10.5x8)

封装: 60-TFBGA

库存2,560

DRAM

SDRAM - DDR2

1Gb (128M x 8)

Parallel

333MHz

15ns

450ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TWBGA (10.5x8)

AS4C128M8D3A-12BANTR

Alliance Memory, Inc.

IC SDRAM 1GBIT 800MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.425 V ~ 1.575 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (10.5x8)

封装: 78-VFBGA

库存5,328

DRAM

SDRAM - DDR3

1Gb (128M x 8)

Parallel

800MHz

15ns

20ns

1.425 V ~ 1.575 V

-40°C ~ 105°C (TC)

Surface Mount

78-VFBGA

78-FBGA (10.5x8)

W988D2FBJX6I

Winbond Electronics

IC SDRAM 256MBIT 166MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 256Mb (8M x 32)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-VFBGA (8x13)

封装: 90-TFBGA

库存2,720

DRAM

SDRAM - Mobile LPSDR

256Mb (8M x 32)

Parallel

166MHz

15ns

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-VFBGA (8x13)

S29GL01GT10DHI020

Cypress Semiconductor Corp

IC FLASH 1GBIT 100NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

封装: 64-LBGA

库存6,264

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

BRCA016GWZ-WE2

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 30UCSP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, CSPBGA
Supplier Device Package: UCSP30L1

封装: 6-XFBGA, CSPBGA

库存25,944

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

-

1.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

6-XFBGA, CSPBGA

UCSP30L1

FT24C256A-USG-T

Fremont Micro Devices USA

IC EEPROM 256KBIT 1MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.154", 3.90mm Width)

库存23,430

EEPROM

256Kb (32K x 8)

I2C

1MHz

5ms

550ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

93LC46B-I/WF15K

Microchip Technology

IC EEPROM 1K SPI 2MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存2,000

EEPROM

1Kb (64 x 16)

SPI

2MHz

6ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

Die

7007L25PFI8

IDT, Integrated Device Technology Inc

IC SRAM 256K PARALLEL 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封装: 80-LQFP

库存4,032

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

GD25LD40EEIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/DUAL 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 4Mbit
Memory Interface: SPI - Dual I/O
Clock Frequency: 50 MHz
Write Cycle Time - Word, Page: 100µs, 6ms
Access Time: 12 ns
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (3x2)

封装: -

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FLASH

FLASH - NOR (SLC)

4Mbit

SPI - Dual I/O

50 MHz

100µs, 6ms

12 ns

1.65V ~ 2V

-40°C ~ 85°C (TA)

Surface Mount

8-XFDFN Exposed Pad

8-USON (3x2)

W9812G6KB-6-TR

Winbond Electronics

IC DRAM 128MBIT LVTTL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: -

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DRAM

SDRAM

128Mbit

LVTTL

166 MHz

-

5 ns

3V ~ 3.6V

0°C ~ 70°C (TC)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

SM662GBC-BFST

Silicon Motion, Inc.

IC FLASH 512GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 512Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封装: -

库存15

FLASH

FLASH - NAND (TLC)

512Gbit

eMMC

-

-40°C ~ 105°C

Surface Mount

100-LBGA

100-BGA (14x18)

AS4C16M16SB-6BIN

Alliance Memory, Inc.

IC DRAM 256MBIT LVTTL 54TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mbit
Memory Interface: LVTTL
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: -

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DRAM

SDRAM

256Mbit

LVTTL

166 MHz

12ns

5 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

NM24C04ULM8X

Fairchild Semiconductor

IC EEPROM 4KBIT I2C 100KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: 3.5 µs
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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EEPROM

4Kbit

I2C

100 kHz

15ms

3.5 µs

2.7V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

MT62F1536M32D4DS-023-AIT-C

Micron Technology Inc.

LPDDR5 48GBIT 32 315/315 TFBGA 4

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5X
Memory Size: 48Gbit
Memory Interface: LVSTL
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.01V ~ 1.12V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 315-TFBGA
Supplier Device Package: 315-TFBGA (12.4x15)

封装: -

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DRAM

SDRAM - Mobile LPDDR5X

48Gbit

LVSTL

4.266 GHz

-

1.01V ~ 1.12V

-40°C ~ 95°C (TC)

Surface Mount

315-TFBGA

315-TFBGA (12.4x15)

NM24C16LEN

Fairchild Semiconductor

IC EEPROM 16KBIT I2C 100KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 15ms
Access Time: 3.5 µs
Voltage - Supply: 2.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: -

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EEPROM

16Kbit

I2C

100 kHz

15ms

3.5 µs

2.7V ~ 5.5V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

MT62F1G128DAWA-031-XT-B-TR

Micron Technology Inc.

LPDDR5 128G 1GX128 FBGA 16DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

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