页 440 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS43DR16160A-5BBLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 200MHZ 84BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 600ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-TWBGA (8x12.5)	封装: 84-TFBGA	库存3,520	DRAM	SDRAM - DDR2	256Mb (16M x 16)	Parallel	200MHz	15ns	600ps	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	84-TFBGA	84-TWBGA (8x12.5)
MT42L256M64D4EV-25 WT:A	Micron Technology Inc.	IC SDRAM 16GBIT 400MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 16Gb (256M x 64) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.3 V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 253-TFBGA Supplier Device Package: 253-FBGA (11x11)	封装: 253-TFBGA	库存2,992	DRAM	SDRAM - Mobile LPDDR2	16Gb (256M x 64)	Parallel	400MHz	-	-	1.14 V ~ 1.3 V	-30°C ~ 85°C (TC)	Surface Mount	253-TFBGA	253-FBGA (11x11)
M25PX80-VMW6TG TR	Micron Technology Inc.	IC FLASH 8MBIT 75MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W	封装: 8-SOIC (0.209", 5.30mm Width)	库存6,320	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	75MHz	15ms, 5ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO W
IDT71V416S10BEI8	IDT, Integrated Device Technology Inc	IC SRAM 4MBIT 10NS 48CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-CABGA (9x9)	封装: 48-TFBGA	库存6,736	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-CABGA (9x9)
M29F400BB70N3T	STMicroelectronics	IC FLASH 4MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存2,240	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
CY7C025-55JXC	Cypress Semiconductor Corp	IC SRAM 128KBIT 55NS 84PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 84-LCC (J-Lead) Supplier Device Package: 84-PLCC (29.31x29.31)	封装: 84-LCC (J-Lead)	库存4,848	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	84-LCC (J-Lead)	84-PLCC (29.31x29.31)
AT49F1025-70JC	Microchip Technology	IC FLASH 1MBIT 70NS 44PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 44-LCC (J-Lead) Supplier Device Package: 44-PLCC (16.59x16.59)	封装: 44-LCC (J-Lead)	库存2,544	FLASH	FLASH	1Mb (64K x 16)	Parallel	-	50µs	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	44-LCC (J-Lead)	44-PLCC (16.59x16.59)
AT27C010L-90JI	Microchip Technology	IC OTP 1MBIT 90NS 32PLCC Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存7,184	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT27BV010-90VI	Microchip Technology	IC OTP 1MBIT 90NS 32VSOP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.488", 12.40mm Width) Supplier Device Package: 32-VSOP	封装: 32-TFSOP (0.488", 12.40mm Width)	库存5,408	EPROM	EPROM - OTP	1Mb (128K x 8)	Parallel	-	-	90ns	2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	32-TFSOP (0.488", 12.40mm Width)	32-VSOP
70V7339S166BFG	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 166MHZ 208CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-LFBGA Supplier Device Package: 208-CABGA (15x15)	封装: 208-LFBGA	库存6,320	SRAM	SRAM - Dual Port, Synchronous	9Mb (512K x 18)	Parallel	166MHz	-	3.6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-LFBGA	208-CABGA (15x15)
MT49H32M18SJ-25E:B TR	Micron Technology Inc.	IC RLDRAM 576MBIT 400MHZ 144FBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-FBGA (18.5x11)	封装: 144-TFBGA	库存5,696	DRAM	DRAM	576Mb (32M x 18)	Parallel	400MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-FBGA (18.5x11)
MT53B384M32D2NP-062 WT:B TR	Micron Technology Inc.	IC SDRAM 12GBIT 1.6GHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 12Gb (384M x 32) Memory Interface: - Clock Frequency: 1600MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,416	DRAM	SDRAM - Mobile LPDDR4	12Gb (384M x 32)	-	1600MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
IS61WV10248BLL-10MLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT 10NS 48MINIBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mb (1M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-miniBGA (9x11)	封装: 48-TFBGA	库存3,664	SRAM	SRAM - Asynchronous	8Mb (1M x 8)	Parallel	-	10ns	10ns	2.4 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFBGA	48-miniBGA (9x11)
MT47H32M16NF-25E IT:H	Micron Technology Inc.	IC SDRAM 512MBIT 400MHZ 84FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	封装: 84-TFBGA	库存3,936	DRAM	SDRAM - DDR2	512Mb (32M x 16)	Parallel	400MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
IS42S16160G-6TL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存3,504	DRAM	SDRAM	256Mb (16M x 16)	Parallel	166MHz	-	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
W9751G8KB25I	Winbond Electronics	IC SDRAM 512MBIT 400MHZ 60BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 512Mb (64M x 8) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 400ps Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-WBGA (8x12.5)	封装: 60-TFBGA	库存6,432	DRAM	SDRAM - DDR2	512Mb (64M x 8)	Parallel	200MHz	15ns	400ps	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	Surface Mount	60-TFBGA	60-WBGA (8x12.5)
24AA256-E/MF	Microchip Technology	IC EEPROM 256KBIT 400KHZ 8DFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN-S (6x5)	封装: 8-VDFN Exposed Pad	库存7,904	EEPROM	EEPROM	256Kb (32K x 8)	I2C	400kHz	5ms	900ns	1.7 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-DFN-S (6x5)
24LC32AFT-E/SN	Microchip Technology	IC EEPROM 32KBIT 400KHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,488	EEPROM	EEPROM	32Kb (4K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
70V25L20PFI	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (8K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存7,344	SRAM	SRAM - Dual Port, Asynchronous	128Kb (8K x 16)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IS21ES08G-JCLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 64G EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (MLC) Memory Size: 64Gb (8G x 8) Memory Interface: eMMC Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: 153-VFBGA	库存7,232	FLASH	FLASH - NAND (MLC)	64Gb (8G x 8)	eMMC	200MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
MT38M4041A3034EZZI.XK6	Micron Technology Inc.	IC FLASH RAM 256M PARALLEL Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH, PSRAM Memory Size: 256Mb (16M x 16), 128M (8M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,000	FLASH, RAM	FLASH, PSRAM	256Mb (16M x 16), 128M (8M x 16)	Parallel	133MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	-	-	-
MT29F128G08AECBBH6-6IT:B	Micron Technology Inc.	IC FLASH 128G PARALLEL VBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,788	FLASH	FLASH - NAND	128Gb (16G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
MT40A512M16LY-062E AAT:E TR	Micron Technology Inc.	IC SDRAM DDR4 8G 96FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.6GHz Write Cycle Time - Word, Page: 15ns Access Time: 19ns Voltage - Supply: 1.14V ~ 1.26V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (7.5x13.5)	封装: 96-TFBGA	库存4,208	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.6GHz	15ns	19ns	1.14V ~ 1.26V	-40°C ~ 105°C (TC)	Surface Mount	96-TFBGA	96-FBGA (7.5x13.5)
GVT71128D32T-5	Galvantech	IC SRAM 4MBIT 100MHZ Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 4Mbit Memory Interface: - Clock Frequency: 100 MHz Write Cycle Time - Word, Page: - Access Time: 5 ns Voltage - Supply: 3.3V Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 100-TQFP Supplier Device Package: -	封装: -	Request a Quote	SRAM	SRAM	4Mbit	-	100 MHz	-	5 ns	3.3V	0°C ~ 70°C	Surface Mount	100-TQFP	-
IS46TR16128D-125KBLA1-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 2GBIT PARALLEL 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
FEMC128GBB-E540	Flexxon Pte Ltd	IC FLASH 1TBIT EMMC 5.1 153FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-FBGA (11.5x13)	封装: -	库存240	FLASH	FLASH - NAND (TLC)	1Tbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C	Surface Mount	153-VFBGA	153-FBGA (11.5x13)
EM6GE08EW8D-10H	Etron Technology, Inc.	IC DRAM 4GBIT PAR 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 4Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (9x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	4Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (9x10.5)
CY7C1312SV18-167BZXC	Cypress Semiconductor Corp	IC SRAM 18MBIT PAR 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mbit Memory Interface: Parallel Clock Frequency: 167 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous, QDR II	18Mbit	Parallel	167 MHz	-	-	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
K6R1008V1C-JC12T00	Samsung	SRAM ASYNC FAST 1MB 128Kx8 3.3V Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: - Voltage - Supply: 3.3V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: 32-SOJ	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	12ns	-	3.3V	0°C ~ 70°C (TA)	Surface Mount	-	32-SOJ
M30082040108X0PSAR	Renesas Electronics Corporation	IC RAM 8MBIT 108MHZ 8SOIC Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 8Mbit Memory Interface: - Clock Frequency: 108 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	8Mbit	-	108 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC

IS43DR16160A-5BBLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 200MHZ 84BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 600ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-TWBGA (8x12.5)

封装: 84-TFBGA

库存3,520

DRAM

SDRAM - DDR2

256Mb (16M x 16)

Parallel

200MHz

15ns

600ps

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

84-TFBGA

84-TWBGA (8x12.5)

MT42L256M64D4EV-25 WT:A

Micron Technology Inc.

IC SDRAM 16GBIT 400MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 16Gb (256M x 64)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.3 V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 253-TFBGA
Supplier Device Package: 253-FBGA (11x11)

封装: 253-TFBGA

库存2,992

DRAM

SDRAM - Mobile LPDDR2

16Gb (256M x 64)

Parallel

400MHz

-

1.14 V ~ 1.3 V

-30°C ~ 85°C (TC)

Surface Mount

253-TFBGA

253-FBGA (11x11)

M25PX80-VMW6TG TR

Micron Technology Inc.

IC FLASH 8MBIT 75MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W

封装: 8-SOIC (0.209", 5.30mm Width)

库存6,320

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

75MHz

15ms, 5ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO W

IDT71V416S10BEI8

IDT, Integrated Device Technology Inc

IC SRAM 4MBIT 10NS 48CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-CABGA (9x9)

封装: 48-TFBGA

库存6,736

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-CABGA (9x9)

M29F400BB70N3T

STMicroelectronics

IC FLASH 4MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存2,240

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

CY7C025-55JXC

Cypress Semiconductor Corp

IC SRAM 128KBIT 55NS 84PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-LCC (J-Lead)
Supplier Device Package: 84-PLCC (29.31x29.31)

封装: 84-LCC (J-Lead)

库存4,848

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

84-LCC (J-Lead)

84-PLCC (29.31x29.31)

AT49F1025-70JC

Microchip Technology

IC FLASH 1MBIT 70NS 44PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Supplier Device Package: 44-PLCC (16.59x16.59)

封装: 44-LCC (J-Lead)

库存2,544

FLASH

1Mb (64K x 16)

Parallel

-

50µs

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

44-LCC (J-Lead)

44-PLCC (16.59x16.59)

AT27C010L-90JI

Microchip Technology

IC OTP 1MBIT 90NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存7,184

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT27BV010-90VI

Microchip Technology

IC OTP 1MBIT 90NS 32VSOP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.488", 12.40mm Width)
Supplier Device Package: 32-VSOP

封装: 32-TFSOP (0.488", 12.40mm Width)

库存5,408

EPROM

EPROM - OTP

1Mb (128K x 8)

Parallel

-

90ns

2.7 V ~ 3.6 V, 4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

32-TFSOP (0.488", 12.40mm Width)

32-VSOP

70V7339S166BFG

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 208CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-LFBGA
Supplier Device Package: 208-CABGA (15x15)

封装: 208-LFBGA

库存6,320

SRAM

SRAM - Dual Port, Synchronous

9Mb (512K x 18)

Parallel

166MHz

-

3.6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-LFBGA

208-CABGA (15x15)

MT49H32M18SJ-25E:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 400MHZ 144FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-FBGA (18.5x11)

封装: 144-TFBGA

库存5,696

DRAM

576Mb (32M x 18)

Parallel

400MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-FBGA (18.5x11)

MT53B384M32D2NP-062 WT:B TR

Micron Technology Inc.

IC SDRAM 12GBIT 1.6GHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 12Gb (384M x 32)
Memory Interface: -
Clock Frequency: 1600MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,416

DRAM

SDRAM - Mobile LPDDR4

12Gb (384M x 32)

-

1600MHz

-

1.1V

-30°C ~ 85°C (TC)

-

IS61WV10248BLL-10MLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT 10NS 48MINIBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mb (1M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-miniBGA (9x11)

封装: 48-TFBGA

库存3,664

SRAM

SRAM - Asynchronous

8Mb (1M x 8)

Parallel

-

10ns

2.4 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFBGA

48-miniBGA (9x11)

MT47H32M16NF-25E IT:H

Micron Technology Inc.

IC SDRAM 512MBIT 400MHZ 84FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

封装: 84-TFBGA

库存3,936

DRAM

SDRAM - DDR2

512Mb (32M x 16)

Parallel

400MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

IS42S16160G-6TL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存3,504

DRAM

SDRAM

256Mb (16M x 16)

Parallel

166MHz

-

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

W9751G8KB25I

Winbond Electronics

IC SDRAM 512MBIT 400MHZ 60BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 512Mb (64M x 8)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 400ps
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-WBGA (8x12.5)

封装: 60-TFBGA

库存6,432

DRAM

SDRAM - DDR2

512Mb (64M x 8)

Parallel

200MHz

15ns

400ps

1.7 V ~ 1.9 V

-40°C ~ 95°C (TC)

Surface Mount

60-TFBGA

60-WBGA (8x12.5)

24AA256-E/MF

Microchip Technology

IC EEPROM 256KBIT 400KHZ 8DFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN-S (6x5)

封装: 8-VDFN Exposed Pad

库存7,904

EEPROM

256Kb (32K x 8)

I2C

400kHz

5ms

900ns

1.7 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-DFN-S (6x5)

24LC32AFT-E/SN

Microchip Technology

IC EEPROM 32KBIT 400KHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,488

EEPROM

32Kb (4K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

70V25L20PFI

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (8K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存7,344

SRAM

SRAM - Dual Port, Asynchronous

128Kb (8K x 16)

Parallel

-

20ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IS21ES08G-JCLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 64G EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (MLC)
Memory Size: 64Gb (8G x 8)
Memory Interface: eMMC
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: 153-VFBGA

库存7,232

FLASH

FLASH - NAND (MLC)

64Gb (8G x 8)

eMMC

200MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

MT38M4041A3034EZZI.XK6

Micron Technology Inc.

IC FLASH RAM 256M PARALLEL

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH, PSRAM
Memory Size: 256Mb (16M x 16), 128M (8M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,000

FLASH, RAM

FLASH, PSRAM

256Mb (16M x 16), 128M (8M x 16)

Parallel

133MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

-

MT29F128G08AECBBH6-6IT:B

Micron Technology Inc.

IC FLASH 128G PARALLEL VBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,788

FLASH

FLASH - NAND

128Gb (16G x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

MT40A512M16LY-062E AAT:E TR

Micron Technology Inc.

IC SDRAM DDR4 8G 96FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.6GHz
Write Cycle Time - Word, Page: 15ns
Access Time: 19ns
Voltage - Supply: 1.14V ~ 1.26V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (7.5x13.5)

封装: 96-TFBGA

库存4,208

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.6GHz

15ns

19ns

1.14V ~ 1.26V

-40°C ~ 105°C (TC)

Surface Mount

96-TFBGA

96-FBGA (7.5x13.5)

GVT71128D32T-5

Galvantech

IC SRAM 4MBIT 100MHZ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 4Mbit
Memory Interface: -
Clock Frequency: 100 MHz
Write Cycle Time - Word, Page: -
Access Time: 5 ns
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 100-TQFP
Supplier Device Package: -

封装: -

Request a Quote

SRAM

4Mbit

-

100 MHz

-

5 ns

3.3V

0°C ~ 70°C

Surface Mount

100-TQFP

-

IS46TR16128D-125KBLA1-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 2GBIT PARALLEL 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

FEMC128GBB-E540

Flexxon Pte Ltd

IC FLASH 1TBIT EMMC 5.1 153FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-FBGA (11.5x13)

封装: -

库存240

FLASH

FLASH - NAND (TLC)

1Tbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C

Surface Mount

153-VFBGA

153-FBGA (11.5x13)

EM6GE08EW8D-10H

Etron Technology, Inc.

IC DRAM 4GBIT PAR 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 4Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (9x10.5)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

4Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (9x10.5)

CY7C1312SV18-167BZXC

Cypress Semiconductor Corp

IC SRAM 18MBIT PAR 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mbit
Memory Interface: Parallel
Clock Frequency: 167 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: -

Request a Quote

SRAM

SRAM - Synchronous, QDR II

18Mbit

Parallel

167 MHz

-

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

K6R1008V1C-JC12T00

Samsung

SRAM ASYNC FAST 1MB 128Kx8 3.3V

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: -
Voltage - Supply: 3.3V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: 32-SOJ

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

12ns

-

3.3V

0°C ~ 70°C (TA)

Surface Mount

-

32-SOJ

M30082040108X0PSAR

Renesas Electronics Corporation

IC RAM 8MBIT 108MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 8Mbit
Memory Interface: -
Clock Frequency: 108 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

8Mbit

-

108 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC