页 916 - 存储器 | 集成电路(IC) | 黑森尔电子
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存储器

记录 62,144
页  916/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
CB867-80053
Cypress Semiconductor Corp

IC FLASH NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,736
-
-
-
-
-
-
-
-
-
-
-
-
W632GU6KB-12
Winbond Electronics

IC SDRAM 2GBIT 800MHZ 96BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 20ns
  • Voltage - Supply: 1.283 V ~ 1.45 V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-TFBGA
  • Supplier Device Package: 96-WBGA (9x13)
封装: 96-TFBGA
库存3,856
DRAM
SDRAM - DDR3L
2Gb (128M x 16)
Parallel
800MHz
-
20ns
1.283 V ~ 1.45 V
0°C ~ 95°C (TC)
Surface Mount
96-TFBGA
96-WBGA (9x13)
hot MT46H128M16LFB7-5 IT:B
Micron Technology Inc.

IC SDRAM 2GBIT 200MHZ 60VFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gb (128M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: 200MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 60-VFBGA
  • Supplier Device Package: 60-VFBGA (10x10)
封装: 60-VFBGA
库存15,000
DRAM
SDRAM - Mobile LPDDR
2Gb (128M x 16)
Parallel
200MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
60-VFBGA
60-VFBGA (10x10)
93LC86BT-E/MS
Microchip Technology

IC EEPROM 16KBIT 3MHZ 8MSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (1K x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
  • Supplier Device Package: 8-MSOP
封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
库存2,544
EEPROM
EEPROM
16Kb (1K x 16)
SPI
3MHz
5ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
8-MSOP
AT25160BY6-YH-T
Microchip Technology

IC EEPROM 16KBIT 20MHZ 8MINIMAP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 20MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFDFN Exposed Pad
  • Supplier Device Package: 8-Mini Map (2x3)
封装: 8-UFDFN Exposed Pad
库存7,376
EEPROM
EEPROM
16Kb (2K x 8)
SPI
20MHz
5ms
-
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFDFN Exposed Pad
8-Mini Map (2x3)
W25Q16VSSIG
Winbond Electronics

IC FLASH 16MBIT 80MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: SPI
  • Clock Frequency: 80MHz
  • Write Cycle Time - Word, Page: 3ms
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.209", 5.30mm Width)
库存7,232
FLASH
FLASH - NOR
16Mb (2M x 8)
SPI
80MHz
3ms
-
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
IS42S32200C1-6TLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 166MHZ 86TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.5ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 86-TFSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 86-TSOP II
封装: 86-TFSOP (0.400", 10.16mm Width)
库存2,192
DRAM
SDRAM
64Mb (2M x 32)
Parallel
166MHz
-
5.5ns
3.15 V ~ 3.45 V
-40°C ~ 85°C (TA)
Surface Mount
86-TFSOP (0.400", 10.16mm Width)
86-TSOP II
hot M29W800DT70N1
Micron Technology Inc.

IC FLASH 8MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 8Mb (1M x 8, 512K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存95,460
FLASH
FLASH - NOR
8Mb (1M x 8, 512K x 16)
Parallel
-
70ns
70ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
hot M29F400BB70N6
Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 70ns
  • Access Time: 70ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存6,972
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
70ns
70ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
CY7C09389V-9AXCT
Cypress Semiconductor Corp

IC SRAM 1.152MBIT 9NS 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Synchronous
  • Memory Size: 1.152Mb (64K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 67MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 9ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存3,248
SRAM
SRAM - Dual Port, Synchronous
1.152Mb (64K x 18)
Parallel
67MHz
-
9ns
3 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
AT49BV4096A-15TC
Microchip Technology

IC FLASH 4MBIT 150NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 30µs
  • Access Time: 150ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存5,920
FLASH
FLASH
4Mb (512K x 8, 256K x 16)
Parallel
-
30µs
150ns
2.7 V ~ 3.6 V
0°C ~ 70°C (TC)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
70V639S15PRF
IDT, Integrated Device Technology Inc

IC SRAM 2.25MBIT 15NS 128TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 2.25Mb (128K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 128-LQFP
  • Supplier Device Package: 128-TQFP (14x20)
封装: 128-LQFP
库存4,032
SRAM
SRAM - Dual Port, Asynchronous
2.25Mb (128K x 18)
Parallel
-
15ns
15ns
3.15 V ~ 3.45 V
0°C ~ 70°C (TA)
Surface Mount
128-LQFP
128-TQFP (14x20)
7142SA55L48B
IDT, Integrated Device Technology Inc

IC SRAM 16KBIT 55NS 48LCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 16Kb (2K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-LCC
  • Supplier Device Package: 48-LCC (14.22x14.22)
封装: 48-LCC
库存2,704
SRAM
SRAM - Dual Port, Asynchronous
16Kb (2K x 8)
Parallel
-
55ns
55ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
48-LCC
48-LCC (14.22x14.22)
MT46H256M32L4SA-48 WT:C
Micron Technology Inc.

IC SDRAM 8GBIT 208MHZ 168TFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 8Gb (256M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 208MHz
  • Write Cycle Time - Word, Page: 14.4ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-TFBGA
  • Supplier Device Package: 168-TFBGA (12x12)
封装: 168-TFBGA
库存5,040
DRAM
SDRAM - Mobile LPDDR
8Gb (256M x 32)
Parallel
208MHz
14.4ns
5.0ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
168-TFBGA
168-TFBGA (12x12)
IS42VM32200M-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 64MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 64Mb (2M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 6ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存6,512
DRAM
SDRAM - Mobile
64Mb (2M x 32)
Parallel
133MHz
-
6ns
1.7 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
93LC66BT-E/OT
Microchip Technology

IC EEPROM 4KBIT 2MHZ SOT23-6

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 2MHz
  • Write Cycle Time - Word, Page: 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6
  • Supplier Device Package: SOT-23-6
封装: SOT-23-6
库存3,184
EEPROM
EEPROM
4Kb (256 x 16)
SPI
2MHz
6ms
-
2.5 V ~ 5.5 V
-40°C ~ 125°C (TA)
Surface Mount
SOT-23-6
SOT-23-6
hot DS1250Y-100+
Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 32-DIP Module (0.600", 15.24mm)
  • Supplier Device Package: 32-EDIP
封装: 32-DIP Module (0.600", 15.24mm)
库存3,312
NVSRAM
NVSRAM (Non-Volatile SRAM)
4Mb (512K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Through Hole
32-DIP Module (0.600", 15.24mm)
32-EDIP
AS4C512M8D3A-12BAN
Alliance Memory, Inc.

IC SDRAM 4GBIT 800MHZ 78BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3
  • Memory Size: 4Gb (512M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 800MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 20ns
  • Voltage - Supply: 1.425 V ~ 1.575 V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 78-VFBGA
  • Supplier Device Package: 78-FBGA (10.5x9)
封装: 78-VFBGA
库存7,360
DRAM
SDRAM - DDR3
4Gb (512M x 8)
Parallel
800MHz
15ns
20ns
1.425 V ~ 1.575 V
-40°C ~ 105°C (TC)
Surface Mount
78-VFBGA
78-FBGA (10.5x9)
BR93G66FVT-3GE2
Rohm Semiconductor

MICROWIRE BUS 4KBIT(256X16BIT) E

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 4Kb (256 x 16)
  • Memory Interface: SPI
  • Clock Frequency: 3MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP-B
封装: 8-TSSOP (0.173", 4.40mm Width)
库存28,104
EEPROM
EEPROM
4Kb (256 x 16)
SPI
3MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP-B
S29GL01GT11DHB010
Cypress Semiconductor Corp

IC 1 GB FLASH MEMORY

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,376
-
-
-
-
-
-
-
-
-
-
-
-
IS25LP512M-RGLE
ISSI, Integrated Silicon Solution Inc

IC FLASH 512M SPI 24TFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI - Quad I/O, QPI, DTR
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 1.6ms
  • Access Time: -
  • Voltage - Supply: 2.3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 105°C
  • Mounting Type: Surface Mount
  • Package / Case: 24-TBGA
  • Supplier Device Package: 24-TFBGA (6x8)
封装: 24-TBGA
库存4,176
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI - Quad I/O, QPI, DTR
133MHz
1.6ms
-
2.3 V ~ 3.6 V
-40°C ~ 105°C
Surface Mount
24-TBGA
24-TFBGA (6x8)
S29GL512S11TFIV23
Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 56TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (32M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 1.65 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 56-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 56-TSOP
封装: 56-TFSOP (0.724", 18.40mm Width)
库存4,560
FLASH
FLASH - NOR
512Mb (32M x 16)
Parallel
-
60ns
110ns
1.65 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
56-TFSOP (0.724", 18.40mm Width)
56-TSOP
IS64WV2568EDBLL-10BLA3-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 2M PARALLEL 36MBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 2Mb (256K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 2.4 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-TFBGA
  • Supplier Device Package: 36-TFBGA (6x8)
封装: 36-TFBGA
库存4,112
SRAM
SRAM - Asynchronous
2Mb (256K x 8)
Parallel
-
10ns
10ns
2.4 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
36-TFBGA
36-TFBGA (6x8)
MT53B4DCNQ-DC
Micron Technology Inc.

SPECIAL/CUSTOM LPDDR4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,904
DRAM
SDRAM - Mobile LPDDR4
-
-
-
-
-
-
-
-
-
-
71342SA35JI
IDT, Integrated Device Technology Inc

IC SRAM 32K PARALLEL 52PLCC

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 32Kb (4K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 35ns
  • Access Time: 35ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 52-LCC (J-Lead)
  • Supplier Device Package: 52-PLCC (19.13x19.13)
封装: 52-LCC (J-Lead)
库存6,896
SRAM
SRAM - Dual Port, Asynchronous
32Kb (4K x 8)
Parallel
-
35ns
35ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
52-LCC (J-Lead)
52-PLCC (19.13x19.13)
MT29F512G08EBHAFB17A3WC1-R
Micron Technology Inc.

IC FLASH NAND 512G TLC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (TLC)
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: 0°C ~ 70°C
  • Mounting Type: Surface Mount
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,160
FLASH
FLASH - NAND (TLC)
512Gb (64G x 8)
-
-
-
-
-
0°C ~ 70°C
Surface Mount
-
-
MT62F1536M64D8EK-023-WT-B-TR
Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 96Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -25°C ~ 85°C
  • Mounting Type: Surface Mount
  • Package / Case: 441-TFBGA
  • Supplier Device Package: 441-TFBGA (14x14)
封装: -
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DRAM
SDRAM - Mobile LPDDR5
96Gbit
Parallel
4.266 GHz
-
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-
-25°C ~ 85°C
Surface Mount
441-TFBGA
441-TFBGA (14x14)
M25PX64-VMF6TP-TR
Micron Technology Inc.

IC FLASH 64MBIT 75MHZ 16SO

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mbit
  • Memory Interface: SPI
  • Clock Frequency: 75 MHz
  • Write Cycle Time - Word, Page: 15ms, 5ms
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOP2
封装: -
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FLASH
FLASH - NOR
64Mbit
SPI
75 MHz
15ms, 5ms
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOP2
IS46LQ32128AL-062TBLA2
ISSI, Integrated Silicon Solution Inc

Automotive (Tc: -40 to +105C), 4

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4X
  • Memory Size: 4Gbit
  • Memory Interface: LVSTL
  • Clock Frequency: 1.6 GHz
  • Write Cycle Time - Word, Page: 18ns
  • Access Time: 3.5 ns
  • Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
  • Operating Temperature: -40°C ~ 105°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 200-VFBGA
  • Supplier Device Package: 200-VFBGA (10x14.5)
封装: -
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DRAM
SDRAM - Mobile LPDDR4X
4Gbit
LVSTL
1.6 GHz
18ns
3.5 ns
1.06V ~ 1.17V, 1.7V ~ 1.95V
-40°C ~ 105°C (TC)
Surface Mount
200-VFBGA
200-VFBGA (10x14.5)
S99GL01GT10TFI010
Infineon Technologies

INFINEON

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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