页 966 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT44K16M36RB-107:A TR	Micron Technology Inc.	IC RLDRAM 576MBIT 933MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (16M x 36) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 10ns Voltage - Supply: 1.28 V ~ 1.42 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 168-TBGA Supplier Device Package: 168-BGA	封装: 168-TBGA	库存5,888	DRAM	DRAM	576Mb (16M x 36)	Parallel	933MHz	-	10ns	1.28 V ~ 1.42 V	0°C ~ 95°C (TC)	Surface Mount	168-TBGA	168-BGA
71V432S6PFGI	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 6NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mb (32K x 32) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: 6ns Voltage - Supply: 3.135 V ~ 3.63 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP	封装: 100-LQFP	库存2,608	SRAM	SRAM - Synchronous	1Mb (32K x 32)	Parallel	83MHz	-	6ns	3.135 V ~ 3.63 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP
MT29C2G24MAABAKAMD-5 IT	Micron Technology Inc.	IC FLASH/LPDRAM 3GBIT 130VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 130-VFBGA Supplier Device Package: 130-VFBGA (8x9)	封装: 130-VFBGA	库存4,032	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)	Parallel	200MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	130-VFBGA	130-VFBGA (8x9)
MT46H16M16LFBF-5 IT:H TR	Micron Technology Inc.	IC SDRAM 256MBIT 200MHZ 60VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-VFBGA Supplier Device Package: 60-VFBGA (8x9)	封装: 60-VFBGA	库存3,520	DRAM	SDRAM - Mobile LPDDR	256Mb (16M x 16)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	60-VFBGA	60-VFBGA (8x9)
IDT71V67903S75PFI8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 9Mb (512K x 18) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存5,040	SRAM	SRAM - Synchronous	9Mb (512K x 18)	Parallel	117MHz	-	7.5ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CY22E016L-SZ45XC	Cypress Semiconductor Corp	IC NVSRAM 16KBIT 45NS 28SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封装: 28-SOIC (0.295", 7.50mm Width)	库存4,048	NVSRAM	NVSRAM (Non-Volatile SRAM)	16Kb (2K x 8)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
AT24C256W-10SI-2.7-T	Microchip Technology	IC EEPROM 256KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: 550ns Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存4,640	EEPROM	EEPROM	256Kb (32K x 8)	I2C	1MHz	10ms	550ns	2.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AT28C16-20PI	Microchip Technology	IC EEPROM 16KBIT 200NS 24DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 1ms Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 24-DIP (0.600", 15.24mm) Supplier Device Package: 24-PDIP	封装: 24-DIP (0.600", 15.24mm)	库存2,656	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	1ms	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	24-DIP (0.600", 15.24mm)	24-PDIP
AT29C512-70JC	Microchip Technology	IC FLASH 512KBIT 70NS 32PLCC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存60,288	FLASH	FLASH	512Kb (64K x 8)	Parallel	-	10ms	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
7130LA55TF8	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 55NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (10x10)	封装: 64-LQFP	库存6,256	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (10x10)
S29GL032N11FFI020	Cypress Semiconductor Corp	NOR Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存2,992	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	-	-	-
W9812G6KH-5 TR	Winbond Electronics	IC SDRAM 128MBIT 200MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 4.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存5,648	DRAM	SDRAM	128Mb (8M x 16)	Parallel	200MHz	-	4.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
AT88SC0204C-MJTG	Microchip Technology	IC EEPROM 2KBIT 5MHZ M2J Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: 35µs Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: M2 J, Smart Card Module (TWI) Supplier Device Package: M2 - J Module (TWI)	封装: M2 J, Smart Card Module (TWI)	库存6,912	EEPROM	EEPROM	2Kb (256 x 8)	I2C	5MHz	5ms	35µs	2.7 V ~ 5.5 V	0°C ~ 70°C (TC)	Surface Mount	M2 J, Smart Card Module (TWI)	M2 - J Module (TWI)
25LC080B-I/ST	Microchip Technology	IC EEPROM 8KBIT 10MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kb (1K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存2,640	EEPROM	EEPROM	8Kb (1K x 8)	SPI	10MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT24C512C-SHD-B	Microchip Technology	IC EEPROM 512KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 550ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存11,520	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	550ns	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
W9412G6KH-5	Winbond Electronics	IC SDRAM 128MBIT 200MHZ 66TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 50ns Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 66-TSSOP (0.400", 10.16mm Width) Supplier Device Package: 66-TSOP II	封装: 66-TSSOP (0.400", 10.16mm Width)	库存6,192	DRAM	SDRAM - DDR	128Mb (8M x 16)	Parallel	200MHz	15ns	50ns	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	66-TSSOP (0.400", 10.16mm Width)	66-TSOP II
AT45DB161E-SHD-T	Adesto Technologies	IC FLASH 16MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 4ms Access Time: - Voltage - Supply: 2.5 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存2,243,892	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	85MHz	8µs, 4ms	-	2.5 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
AS7C31026B-12TCN	Alliance Memory, Inc.	IC SRAM 1MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存7,488	SRAM	SRAM - Asynchronous	1Mb (64K x 16)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
MT41K512M8DA-107:P	Micron Technology Inc.	IC SDRAM 4GBIT 933MHZ 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存163,584	DRAM	SDRAM - DDR3L	4Gb (512M x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
CY7C1315KV18-250BZIT	Cypress Semiconductor Corp	IC SRAM 18M PARALLEL 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 18Mb (512K x 36) Memory Interface: Parallel Clock Frequency: 250MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存6,000	SRAM	SRAM - Synchronous, QDR II	18Mb (512K x 36)	Parallel	250MHz	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
S34ML01G200TFV003	Cypress Semiconductor Corp	IC FLASH 1G PARALLEL 48TSOP I Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存7,072	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
7133SA45JI	IDT, Integrated Device Technology Inc	IC SRAM 32K PARALLEL 68PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (2K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 68-LCC (J-Lead) Supplier Device Package: 68-PLCC (24.21x24.21)	封装: 68-LCC (J-Lead)	库存3,616	SRAM	SRAM - Dual Port, Asynchronous	32Kb (2K x 16)	Parallel	-	45ns	45ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	68-LCC (J-Lead)	68-PLCC (24.21x24.21)
CG8328AMT	Cypress Semiconductor Corp	IC SRAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存120,000	-	-	-	-	-	-	-	-	-	-	-	-
MT40A512M16HA-083E IT:A	Micron Technology Inc.	IC DRAM 8G PARALLEL 1.2GHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 8Gb (512M x 16) Memory Interface: Parallel Clock Frequency: 1.2GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,112	DRAM	SDRAM - DDR4	8Gb (512M x 16)	Parallel	1.2GHz	-	-	1.14 V ~ 1.26 V	-40°C ~ 95°C (TC)	-	-	-
EM6GD08EWAHH-10IH	Etron Technology, Inc.	IC DRAM 2GBIT PARALLEL 78FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 2Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (7.5x10.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	2Gbit	Parallel	933 MHz	15ns	20 ns	1.425V ~ 1.575V	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (7.5x10.5)
MT53E256M32D2FW-046-AUT-B	Micron Technology Inc.	LPDDR4 8G 256MX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 125°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4	8Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 125°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)
TMS48C121-10DZ	Texas Instruments	VIDEO DRAM, 128KX8, CMOS, PDSO40 Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S78HL512TC0BHB003	Infineon Technologies	IC FLASH RAM 512MBIT SPI 24FBGA Memory Type: Non-Volatile, Volatile Memory Format: FLASH, RAM Technology: FLASH, RAM Memory Size: 512Mbit (FLASH), 64Mbit (RAM) Memory Interface: SPI - Octal I/O Clock Frequency: 166 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	库存6,000	FLASH, RAM	FLASH, RAM	512Mbit (FLASH), 64Mbit (RAM)	SPI - Octal I/O	166 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	24-TBGA	24-FBGA (8x8)
M5M5V108DVP-70H-BT	Renesas	STANDARD SRAM, 128KX8, 70NS, CMO Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S26HS01GTFPBHM020	Infineon Technologies	IC FLASH 1GBIT HYPERBUS 24FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 1Gbit Memory Interface: HyperBus Clock Frequency: 166 MHz Write Cycle Time - Word, Page: 1.7ms Access Time: 5.45 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (8x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	1Gbit	HyperBus	166 MHz	1.7ms	5.45 ns	1.7V ~ 2V	-40°C ~ 125°C (TA)	Surface Mount	24-VBGA	24-FBGA (8x8)

MT44K16M36RB-107:A TR

Micron Technology Inc.

IC RLDRAM 576MBIT 933MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (16M x 36)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 10ns
Voltage - Supply: 1.28 V ~ 1.42 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-TBGA
Supplier Device Package: 168-BGA

封装: 168-TBGA

库存5,888

DRAM

576Mb (16M x 36)

Parallel

933MHz

-

10ns

1.28 V ~ 1.42 V

0°C ~ 95°C (TC)

Surface Mount

168-TBGA

168-BGA

71V432S6PFGI

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 6NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mb (32K x 32)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: 6ns
Voltage - Supply: 3.135 V ~ 3.63 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP

封装: 100-LQFP

库存2,608

SRAM

SRAM - Synchronous

1Mb (32K x 32)

Parallel

83MHz

-

6ns

3.135 V ~ 3.63 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP

MT29C2G24MAABAKAMD-5 IT

Micron Technology Inc.

IC FLASH/LPDRAM 3GBIT 130VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 130-VFBGA
Supplier Device Package: 130-VFBGA (8x9)

封装: 130-VFBGA

库存4,032

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

2Gb (128M x 16)(NAND), 1Gb (32M x 32)(LPDRAM)

Parallel

200MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

130-VFBGA

130-VFBGA (8x9)

MT46H16M16LFBF-5 IT:H TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 60VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-VFBGA
Supplier Device Package: 60-VFBGA (8x9)

封装: 60-VFBGA

库存3,520

DRAM

SDRAM - Mobile LPDDR

256Mb (16M x 16)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

60-VFBGA

60-VFBGA (8x9)

IDT71V67903S75PFI8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 9Mb (512K x 18)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存5,040

SRAM

SRAM - Synchronous

9Mb (512K x 18)

Parallel

117MHz

-

7.5ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CY22E016L-SZ45XC

Cypress Semiconductor Corp

IC NVSRAM 16KBIT 45NS 28SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

库存4,048

NVSRAM

NVSRAM (Non-Volatile SRAM)

16Kb (2K x 8)

Parallel

-

45ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

AT24C256W-10SI-2.7-T

Microchip Technology

IC EEPROM 256KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 550ns
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存4,640

EEPROM

256Kb (32K x 8)

I2C

1MHz

10ms

550ns

2.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AT28C16-20PI

Microchip Technology

IC EEPROM 16KBIT 200NS 24DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 1ms
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 24-DIP (0.600", 15.24mm)
Supplier Device Package: 24-PDIP

封装: 24-DIP (0.600", 15.24mm)

库存2,656

EEPROM

16Kb (2K x 8)

Parallel

-

1ms

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

24-DIP (0.600", 15.24mm)

24-PDIP

AT29C512-70JC

Microchip Technology

IC FLASH 512KBIT 70NS 32PLCC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存60,288

FLASH

512Kb (64K x 8)

Parallel

-

10ms

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

7130LA55TF8

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (10x10)

封装: 64-LQFP

库存6,256

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (10x10)

S29GL032N11FFI020

Cypress Semiconductor Corp

NOR

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,992

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

-

W9812G6KH-5 TR

Winbond Electronics

IC SDRAM 128MBIT 200MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 4.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存5,648

DRAM

SDRAM

128Mb (8M x 16)

Parallel

200MHz

-

4.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

AT88SC0204C-MJTG

Microchip Technology

IC EEPROM 2KBIT 5MHZ M2J

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 35µs
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: M2 J, Smart Card Module (TWI)
Supplier Device Package: M2 - J Module (TWI)

封装: M2 J, Smart Card Module (TWI)

库存6,912

EEPROM

2Kb (256 x 8)

I2C

5MHz

5ms

35µs

2.7 V ~ 5.5 V

0°C ~ 70°C (TC)

Surface Mount

M2 J, Smart Card Module (TWI)

M2 - J Module (TWI)

25LC080B-I/ST

Microchip Technology

IC EEPROM 8KBIT 10MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kb (1K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存2,640

EEPROM

8Kb (1K x 8)

SPI

10MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT24C512C-SHD-B

Microchip Technology

IC EEPROM 512KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 550ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存11,520

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

550ns

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

W9412G6KH-5

Winbond Electronics

IC SDRAM 128MBIT 200MHZ 66TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 50ns
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP II

封装: 66-TSSOP (0.400", 10.16mm Width)

库存6,192

DRAM

SDRAM - DDR

128Mb (8M x 16)

Parallel

200MHz

15ns

50ns

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

66-TSSOP (0.400", 10.16mm Width)

66-TSOP II

AT45DB161E-SHD-T

Adesto Technologies

IC FLASH 16MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 4ms
Access Time: -
Voltage - Supply: 2.5 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存2,243,892

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

85MHz

8µs, 4ms

-

2.5 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

AS7C31026B-12TCN

Alliance Memory, Inc.

IC SRAM 1MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存7,488

SRAM

SRAM - Asynchronous

1Mb (64K x 16)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

MT41K512M8DA-107:P

Micron Technology Inc.

IC SDRAM 4GBIT 933MHZ 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存163,584

DRAM

SDRAM - DDR3L

4Gb (512M x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

CY7C1315KV18-250BZIT

Cypress Semiconductor Corp

IC SRAM 18M PARALLEL 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 18Mb (512K x 36)
Memory Interface: Parallel
Clock Frequency: 250MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存6,000

SRAM

SRAM - Synchronous, QDR II

18Mb (512K x 36)

Parallel

250MHz

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

S34ML01G200TFV003

Cypress Semiconductor Corp

IC FLASH 1G PARALLEL 48TSOP I

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存7,072

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

7133SA45JI

IDT, Integrated Device Technology Inc

IC SRAM 32K PARALLEL 68PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (2K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 68-LCC (J-Lead)
Supplier Device Package: 68-PLCC (24.21x24.21)

封装: 68-LCC (J-Lead)

库存3,616

SRAM

SRAM - Dual Port, Asynchronous

32Kb (2K x 16)

Parallel

-

45ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

68-LCC (J-Lead)

68-PLCC (24.21x24.21)

CG8328AMT

Cypress Semiconductor Corp

IC SRAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存120,000

-

MT40A512M16HA-083E IT:A

Micron Technology Inc.

IC DRAM 8G PARALLEL 1.2GHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 8Gb (512M x 16)
Memory Interface: Parallel
Clock Frequency: 1.2GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,112

DRAM

SDRAM - DDR4

8Gb (512M x 16)

Parallel

1.2GHz

-

1.14 V ~ 1.26 V

-40°C ~ 95°C (TC)

-

EM6GD08EWAHH-10IH

Etron Technology, Inc.

IC DRAM 2GBIT PARALLEL 78FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 2Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (7.5x10.5)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

2Gbit

Parallel

933 MHz

15ns

20 ns

1.425V ~ 1.575V

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (7.5x10.5)

MT53E256M32D2FW-046-AUT-B

Micron Technology Inc.

LPDDR4 8G 256MX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 125°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4

8Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 125°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)

TMS48C121-10DZ

Texas Instruments

VIDEO DRAM, 128KX8, CMOS, PDSO40

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

S78HL512TC0BHB003

Infineon Technologies

IC FLASH RAM 512MBIT SPI 24FBGA

Memory Type: Non-Volatile, Volatile
Memory Format: FLASH, RAM
Technology: FLASH, RAM
Memory Size: 512Mbit (FLASH), 64Mbit (RAM)
Memory Interface: SPI - Octal I/O
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

库存6,000

FLASH, RAM

512Mbit (FLASH), 64Mbit (RAM)

SPI - Octal I/O

166 MHz

-

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

24-TBGA

24-FBGA (8x8)

M5M5V108DVP-70H-BT

Renesas

STANDARD SRAM, 128KX8, 70NS, CMO

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

S26HS01GTFPBHM020

Infineon Technologies

IC FLASH 1GBIT HYPERBUS 24FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 1Gbit
Memory Interface: HyperBus
Clock Frequency: 166 MHz
Write Cycle Time - Word, Page: 1.7ms
Access Time: 5.45 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (8x8)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

1Gbit

HyperBus

166 MHz

1.7ms

5.45 ns

1.7V ~ 2V

-40°C ~ 125°C (TA)

Surface Mount

24-VBGA

24-FBGA (8x8)