Micron Technology Inc. 产品

M25PX80-VMP6TG0U TR

Micron Technology Inc.

IC FLASH 8MBIT 75MHZ 8VFDFPN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 8Mb (1M x 8)
• Memory Interface: SPI
• Clock Frequency: 75MHz
• Write Cycle Time - Word, Page: 15ms, 5ms
• Access Time: -
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-VFQFPN (6x5)

封装: 8-VDFN Exposed Pad

EDW2032BBBG-7A-F-R TR

Micron Technology Inc.

IC SGRAM 2GBIT 1.75GHZ 170FBGA

• Memory Type: Volatile
• Memory Format: RAM
• Technology: SGRAM - GDDR5
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 1.75GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.31 V ~ 1.65 V
• Operating Temperature: 0°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 170-TFBGA
• Supplier Device Package: 170-FBGA (12x14)

封装: 170-TFBGA

M29W128GL7AZS6E

Micron Technology Inc.

IC FLASH 128MBIT 70NS 64FBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 128Mb (16M x 8, 8M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-LBGA
• Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

M29W640GL70ZF3F TR

Micron Technology Inc.

IC FLASH 64MBIT 70NS 64TBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (8M x 8, 4M x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 64-TBGA
• Supplier Device Package: 64-TBGA (10x13)

封装: 64-TBGA

MT46H64M32LFCX-6 WT:B TR

Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 90VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR
• Memory Size: 2Gb (64M x 32)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 5.0ns
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -25°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 90-VFBGA
• Supplier Device Package: 90-VFBGA (9x13)

封装: 90-VFBGA

MT29C1G12MAACAEAML-6 IT

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 153VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH, RAM
• Technology: FLASH - NAND, Mobile LPDRAM
• Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
• Memory Interface: Parallel
• Clock Frequency: 166MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.7 V ~ 1.95 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 153-VFBGA
• Supplier Device Package: 153-VFBGA

封装: 153-VFBGA

MT41K128M16HA-15E IT:D

Micron Technology Inc.

IC SDRAM 2GBIT 667MHZ 96FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR3L
• Memory Size: 2Gb (128M x 16)
• Memory Interface: Parallel
• Clock Frequency: 667MHz
• Write Cycle Time - Word, Page: -
• Access Time: 13.5ns
• Voltage - Supply: 1.283 V ~ 1.45 V
• Operating Temperature: -40°C ~ 95°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 96-TFBGA
• Supplier Device Package: 96-FBGA (9x14)

封装: 96-TFBGA

NAND01GW3B2BZA6E

Micron Technology Inc.

IC FLASH 1GBIT 30NS 63VFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 1Gb (128M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 30ns
• Access Time: 30ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 63-TFBGA
• Supplier Device Package: 63-VFBGA (9x11)

封装: 63-TFBGA

MT48LC8M16LFB4-10 IT:G TR

Micron Technology Inc.

IC SDRAM 128MBIT 100MHZ 54VFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPSDR
• Memory Size: 128Mb (8M x 16)
• Memory Interface: Parallel
• Clock Frequency: 100MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 7ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 54-VFBGA
• Supplier Device Package: 54-VFBGA (8x8)

封装: 54-VFBGA

MT28F004B3VG-8 T

Micron Technology Inc.

IC FLASH 4MBIT 80NS 40TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 80ns
• Access Time: 80ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 40-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 40-TSOP I

封装: 40-TFSOP (0.724", 18.40mm Width)

MT46V64M4P-5B:G TR

Micron Technology Inc.

IC SDRAM 256MBIT 200MHZ 66TSOP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR
• Memory Size: 256Mb (64M x 4)
• Memory Interface: Parallel
• Clock Frequency: 200MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 700ps
• Voltage - Supply: 2.5 V ~ 2.7 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 66-TSSOP (0.400", 10.16mm Width)
• Supplier Device Package: 66-TSOP

封装: 66-TSSOP (0.400", 10.16mm Width)

MT47H1G4WTR-25E:C TR

Micron Technology Inc.

IC SDRAM 4GBIT 400MHZ 63BGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - DDR2
• Memory Size: 4Gb (1G x 4)
• Memory Interface: Parallel
• Clock Frequency: 400MHz
• Write Cycle Time - Word, Page: 15ns
• Access Time: 400ps
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 63-FBGA
• Supplier Device Package: 63-FBGA (9x11.5)

封装: 63-FBGA

EDF8164A3PK-JD-F-R TR

Micron Technology Inc.

IC SDRAM 8GBIT 933MHZ FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR3
• Memory Size: 8Gb (128M x 64)
• Memory Interface: Parallel
• Clock Frequency: 933MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT29F128G08CEHGBJ4-3RES:G TR

Micron Technology Inc.

IC FLASH 128GBIT 132VBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 128Gb (16G x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.5 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

EDB4432BBBJ-1D-F-R

Micron Technology Inc.

DRAM LPDDR2 128MX32 FBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR2
• Memory Size: 4Gb (128M x 32)
• Memory Interface: Parallel
• Clock Frequency: 533MHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.14 V ~ 1.95 V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 134-WFBGA
• Supplier Device Package: 134-FBGA (10x11.5)

封装: 134-WFBGA

M29W400DT70ZE6E

Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TFBGA

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 4Mb (512K x 8, 256K x 16)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFBGA
• Supplier Device Package: 48-TFBGA (6x9)

封装: 48-TFBGA

MT29F4G08ABAEAWP:E TR

Micron Technology Inc.

IC FLASH 4GBIT 48TSOP

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NAND
• Memory Size: 4Gb (512M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 48-TFSOP (0.724", 18.40mm Width)
• Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

N25Q064A13EF8A0F TR

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8VDFPN

• Memory Type: Non-Volatile
• Memory Format: FLASH
• Technology: FLASH - NOR
• Memory Size: 64Mb (16M x 4)
• Memory Interface: SPI
• Clock Frequency: 108MHz
• Write Cycle Time - Word, Page: 8ms, 5ms
• Access Time: -
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-VDFN Exposed Pad
• Supplier Device Package: 8-VDFPN (6x5) (MLP8)

封装: 8-VDFN Exposed Pad

MTFC16GAPALNA-AIT

Micron Technology Inc.

EMMC 128G MMC5.1 J56X AT

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MTFC4GLWDM-4M AAT Z TR

Micron Technology Inc.

MODULE EMMC 4GB 100LBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53E128M16D1DS-046 AIT:A TR

Micron Technology Inc.

IC DRAM LPDDR4 WFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

MT53E256M32D2DS-046-WT-B

Micron Technology Inc.

IC DRAM 8GBIT 2.133GHZ 200WFBGA

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 8Gbit
• Memory Interface: -
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: 1.1V
• Operating Temperature: -30°C ~ 85°C (TC)
• Mounting Type: Surface Mount
• Package / Case: 200-WFBGA
• Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

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MT53E4G32D8CY-046-WT-C

Micron Technology Inc.

LPDDR4 128G 4GX32 FBGA 8DP

• Memory Type: Volatile
• Memory Format: DRAM
• Technology: SDRAM - Mobile LPDDR4
• Memory Size: 128Gbit
• Memory Interface: Parallel
• Clock Frequency: 2.133 GHz
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -25°C ~ 85°C
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT53E256M32D1KS-046-WT-L

Micron Technology Inc.

IC DRAM 8GBIT LPDDR4 TFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 200-VFBGA
• Supplier Device Package: 200-VFBGA (10x14.5)

封装: -

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MT62F2G64D8EK-023-FAIT-C

Micron Technology Inc.

LPDDR5 128GBIT 64 441/441 TFBGA

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT29GZ6A6BPIET-046IT-112-TR

Micron Technology Inc.

NAND MCP 16GB

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT29GZ9A9BPMET-046AIT-265

Micron Technology Inc.

NAND MCP 32GBIT 149/224 VFBGA AT

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT55L256L18P1F-10

Micron Technology Inc.

IC SRAM 4MBIT PAR 165FBGA

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - ZBT
• Memory Size: 4Mbit
• Memory Interface: Parallel
• Clock Frequency: 100 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 5 ns
• Voltage - Supply: 3.135V ~ 3.465V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 165-TBGA
• Supplier Device Package: 165-FBGA (13x15)

封装: -

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MT62F1G64D4CZ-023-AIT-C-TR

Micron Technology Inc.

LPDDR5 64GBIT 64 561/570 TFBGA 4

• Memory Type: -
• Memory Format: -
• Technology: -
• Memory Size: -
• Memory Interface: -
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: -
• Voltage - Supply: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

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MT58L64L36PT-5

Micron Technology Inc.

IC SRAM 2MBIT PARALLEL 100TQFP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 2Mbit
• Memory Interface: Parallel
• Clock Frequency: 200 MHz
• Write Cycle Time - Word, Page: -
• Access Time: 3.5 ns
• Voltage - Supply: 3.135V ~ 3.6V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 100-LQFP
• Supplier Device Package: 100-TQFP (14x20.1)

封装: -

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