Microsemi Corporation 产品 - 晶体管 - 双极 (BJT) - 射频 | 黑森尔电子
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Microsemi Corporation 产品 - 晶体管 - 双极 (BJT) - 射频

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图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
1004MP
Microsemi Corporation

TRANS RF BIPO 7W 300MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
封装: 55FW-1
库存5,984
50V
960MHz ~ 1.215GHz
-
7dB ~ 9dB
7W
20 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
MS1008
Microsemi Corporation

TRANS RF BIPO 233W 10A TO-220AC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 14dB
  • Power - Max: 233W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.4A, 6V
  • Current - Collector (Ic) (Max): 10A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M164
  • Supplier Device Package: M164
封装: M164
库存4,528
55V
30MHz
-
14dB
233W
15 @ 1.4A, 6V
10A
200°C (TJ)
Chassis Mount
M164
M164
MS1076
Microsemi Corporation

TRANS RF BIPO 320W 16A M174

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 320W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 7A, 5V
  • Current - Collector (Ic) (Max): 16A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M174
  • Supplier Device Package: M174
封装: M174
库存5,360
35V
30MHz
-
12dB
320W
15 @ 7A, 5V
16A
200°C (TJ)
Chassis Mount
M174
M174
UMIL3
Microsemi Corporation

TRANS RF BIPO 11W 700MA 55FT3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 225MHz ~ 400MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.8db ~ 13dB
  • Power - Max: 11W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 100A, 5V
  • Current - Collector (Ic) (Max): 700mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: 55FT
  • Supplier Device Package: 55FT
封装: 55FT
库存4,976
30V
225MHz ~ 400MHz
-
11.8db ~ 13dB
11W
10 @ 100A, 5V
700mA
150°C (TJ)
Chassis, Stud Mount
55FT
55FT
1002MP
Microsemi Corporation

TRANS RF BIPO 7W 250MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.24dB ~ 11dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
封装: 55FW-1
库存5,536
50V
960MHz ~ 1.215GHz
-
8.24dB ~ 11dB
7W
20 @ 100mA, 5V
250mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
MS1261
Microsemi Corporation

TRANS RF BIPO 34W 2.5A M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 34W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
封装: M122
库存4,112
18V
175MHz
-
12dB
34W
20 @ 250mA, 5V
2.5A
200°C (TJ)
Chassis, Stud Mount
M122
M122
1000MP
Microsemi Corporation

TRANS RF BIPO 5.3W 300MA 55FW

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10.8dB
  • Power - Max: 5.3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW
  • Supplier Device Package: 55FW
封装: 55FW
库存5,392
-
1.15GHz
-
10.8dB
5.3W
15 @ 100mA, 5V
300mA
-
Chassis Mount
55FW
55FW
MS1336
Microsemi Corporation

TRANS RF BIPO 70W 8A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 70W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M135
  • Supplier Device Package: M135
封装: M135
库存6,688
18V
175MHz
-
10dB
70W
20 @ 250mA, 5V
8A
200°C (TJ)
Chassis, Stud Mount
M135
M135
SD1526-01
Microsemi Corporation

TRANS RF BIPO 21.9W 1A M115

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 21.9W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M115
  • Supplier Device Package: M115
封装: M115
库存2,352
45V
960MHz ~ 1.215GHz
-
9.5dB
21.9W
-
1A
200°C (TJ)
Chassis Mount
M115
M115
MS1227
Microsemi Corporation

TRANS RF BIPO 80W 4.5A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 15dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
封装: M113
库存3,584
18V
30MHz
-
15dB
80W
200 @ 1A, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
JAN2N2857UB
Microsemi Corporation

TRANS NPN 15V 0.04A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 21dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存3,936
15V
-
4.5dB @ 450MHz
21dB
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
SD1224
Microsemi Corporation

TRANS RF BIPO 60W 5A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
封装: M135
库存5,328
35V
175MHz
-
7.6dB
60W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
M135
M135
MS652S
Microsemi Corporation

TRANS RF BIPO 25W 2A M123

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M123
  • Supplier Device Package: M123
封装: M123
库存3,584
16V
450MHz ~ 512MHz
-
10dB
25W
10 @ 200mA, 5V
2A
200°C (TJ)
Chassis Mount
M123
M123
MS1402
Microsemi Corporation

TRANS RF BIPO 5W 750MA M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 750mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M122
  • Supplier Device Package: M122
封装: M122
库存2,896
16V
450MHz ~ 512MHz
-
10dB
5W
20 @ 100mA, 5V
750mA
200°C (TJ)
Chassis Mount
M122
M122
MS1512
Microsemi Corporation

TRANS BIPO NPN M122

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 860MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 19.4W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 1.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: M122
  • Supplier Device Package: M122
封装: M122
库存7,984
25V
860MHz
-
10dB
19.4W
-
1.2A
200°C (TJ)
Chassis, Stud Mount
M122
M122
MS1226
Microsemi Corporation

TRANS BIPO NPN M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 36V
  • Frequency - Transition: 30MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 18dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 4.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
封装: M113
库存7,824
36V
30MHz
-
18dB
80W
10 @ 500mA, 5V
4.5A
200°C (TJ)
Chassis Mount
M113
M113
SD1224-02
Microsemi Corporation

TRANS RF BIPO 60W 5A M113

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.6dB
  • Power - Max: 60W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 500mA, 5V
  • Current - Collector (Ic) (Max): 5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M113
  • Supplier Device Package: M113
封装: M113
库存3,648
35V
175MHz
-
7.6dB
60W
20 @ 500mA, 5V
5A
200°C (TJ)
Chassis Mount
M113
M113
JANTX2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存7,248
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANTX2N4957
Microsemi Corporation

TRANS PNP 30V 30MA TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
封装: TO-72-3 Metal Can
库存3,216
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
JAN2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存6,032
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
JANTX2N2857
Microsemi Corporation

TRANS NPN 15V 0.04A TO-72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 450MHz
  • Gain: 12.5dB ~ 21dB @ 450MHz
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72
封装: TO-72-3 Metal Can
库存3,712
15V
500MHz
4.5dB @ 450MHz
12.5dB ~ 21dB @ 450MHz
200mW
30 @ 3mA, 1V
40mA
-65°C ~ 200°C (TJ)
Through Hole
TO-72-3 Metal Can
TO-72
2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存6,768
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
SD1444
Microsemi Corporation

TRANS RF BIPO 5W 400MA TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 450MHz ~ 512MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: TO-205AD, TO-39-3 Metal Can
库存5,168
16V
450MHz ~ 512MHz
-
8dB
5W
20 @ 50mA, 5V
400mA
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
SD1127
Microsemi Corporation

TRANSISTOR BIPO TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 640mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: TO-205AD, TO-39-3 Metal Can
库存3,968
18V
175MHz
-
12dB
8W
10 @ 50mA, 5V
640mA
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
MS1649
Microsemi Corporation

TRANS RF BIPO 7.8W 470MHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 470MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 7.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: TO-205AD, TO-39-3 Metal Can
库存3,456
16V
470MHz
-
9.5dB
7.8W
20 @ 100mA, 5V
1A
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
MS1409
Microsemi Corporation

TRANS RF BIPO 7W 1A TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: TO-205AD, TO-39-3 Metal Can
库存3,520
40V
175MHz
-
10dB
7W
20 @ 100mA, 5V
1A
200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
hot 2N5179
Microsemi Corporation

TRANS RF NPN 12V 50MA TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 200MHz
  • Noise Figure (dB Typ @ f): 4.5dB @ 200MHz
  • Gain: 20dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封装: TO-206AF, TO-72-4 Metal Can
库存17,928
12V
200MHz
4.5dB @ 200MHz
20dB
300mW
25 @ 3mA, 1V
50mA
-
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
MRF586G
Microsemi Corporation

TRANS BIPO NPN TO-39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 17V
  • Frequency - Transition: 3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 1W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: TO-205AD, TO-39-3 Metal Can
库存4,208
17V
3GHz
-
13.5dB
1W
40 @ 50mA, 5V
200mA
-
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
SRF4427
Microsemi Corporation

TRANS RF BIPO 1.5W 400MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 1.3GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 17dB ~ 18dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 150mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,672
18V
1.3GHz
-
17dB ~ 18dB
1.5W
20 @ 150mA, 5V
400mA
-
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot MRF5812R2
Microsemi Corporation

RF TRANS NPN 18V 200MA 8SOIC

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 2dB @ 500MHz
  • Gain: 15.5dB
  • Power - Max: 1.25W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存266,268
18V
5GHz
2dB @ 500MHz
15.5dB
1.25W
50 @ 50mA, 5V
200mA
150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO