Microsemi Corporation 产品 - 晶体管 - FET,MOSFET - 阵列 | 黑森尔电子
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Microsemi Corporation 产品 - 晶体管 - FET,MOSFET - 阵列

记录 236
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描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
APTC80DDA15T3G
Microsemi Corporation

MOSFET 2N-CH 800V 28A SP3

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 28A
  • Rds On (Max) @ Id, Vgs: 150 mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2mA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
  • Power - Max: 277W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存6,752
Standard
800V
28A
150 mOhm @ 14A, 10V
3.9V @ 2mA
180nC @ 10V
4507pF @ 25V
277W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM60A11FT1G
Microsemi Corporation

MOSFET 2N-CH 600V 40A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 40A
  • Rds On (Max) @ Id, Vgs: 132 mOhm @ 33A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 330nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10552pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存6,448
Standard
600V
40A
132 mOhm @ 33A, 10V
5V @ 2.5mA
330nC @ 10V
10552pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM60H23FT1G
Microsemi Corporation

MOSFET 4N-CH 600V 20A SP1

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 276 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存6,176
Standard
600V
20A
276 mOhm @ 17A, 10V
5V @ 1mA
165nC @ 10V
5316pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM50H15FT1G
Microsemi Corporation

MOSFET 4N-CH 500V 25A SP1

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 25A
  • Rds On (Max) @ Id, Vgs: 180 mOhm @ 21A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5448pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存2,976
Standard
500V
25A
180 mOhm @ 21A, 10V
5V @ 1mA
170nC @ 10V
5448pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC60DSKM70T1G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

  • FET Type: 2 N Channel (Dual Buck Chopper)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存3,840
Super Junction
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
700pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC60DDAM70T1G
Microsemi Corporation

MOSFET 2N-CH 600V 39A SP1

  • FET Type: 2 N Channel (Dual Buck Chopper)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 39A
  • Rds On (Max) @ Id, Vgs: 70 mOhm @ 39A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 2.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 259nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存3,856
Logic Level Gate
600V
39A
70 mOhm @ 39A, 10V
3.9V @ 2.7mA
259nC @ 10V
7000pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTC80H29T3G
Microsemi Corporation

MOSFET 4N-CH 800V 15A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 800V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2254pF @ 25V
  • Power - Max: 156W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存4,080
Standard
800V
15A
290 mOhm @ 7.5A, 10V
3.9V @ 1mA
90nC @ 10V
2254pF @ 25V
156W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTMC120AM25CT3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 105A SP3F

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 105A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 80A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 4mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 197nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 3800pF @ 1000V
  • Power - Max: 500W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存3,424
Standard
1200V (1.2kV)
105A
25 mOhm @ 80A, 20V
2.2V @ 4mA (Typ)
197nC @ 20V
3800pF @ 1000V
500W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM10AM02FG
Microsemi Corporation

MOSFET 2N-CH 100V 495A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 495A
  • Rds On (Max) @ Id, Vgs: 2.5 mOhm @ 200A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存4,144
Standard
100V
495A
2.5 mOhm @ 200A, 10V
4V @ 10mA
1360nC @ 10V
40000pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM20AM04FG
Microsemi Corporation

MOSFET 2N-CH 200V 372A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 372A
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 186A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 560nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28900pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存7,456
Standard
200V
372A
5 mOhm @ 186A, 10V
5V @ 10mA
560nC @ 10V
28900pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC60AM45BC1G
Microsemi Corporation

MOSFET 3N-CH 600V 49A SP1

  • FET Type: 3 N Channel (Phase Leg + Boost Chopper)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存3,488
Standard
600V
49A
45 mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTMC120AM08CD3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 250A D3

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 250A
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 200A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 10mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 490nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 9500pF @ 1000V
  • Power - Max: 1100W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
封装: D-3 Module
库存6,352
Standard
1200V (1.2kV)
250A
10 mOhm @ 200A, 20V
2.2V @ 10mA (Typ)
490nC @ 20V
9500pF @ 1000V
1100W
-40°C ~ 150°C (TJ)
Chassis Mount
D-3 Module
D3
APTMC120TAM33CTPAG
Microsemi Corporation

MOSFET 6N-CH 1200V 78A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 78A
  • Rds On (Max) @ Id, Vgs: 33 mOhm @ 60A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 3mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 148nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 1000V
  • Power - Max: 370W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
封装: SP6
库存7,152
Standard
1200V (1.2kV)
78A
33 mOhm @ 60A, 20V
2.2V @ 3mA (Typ)
148nC @ 20V
2850pF @ 1000V
370W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTMC120AM16CD3AG
Microsemi Corporation

MOSFET 2N-CH 1200V 131A D3

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 131A
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 5mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4750pF @ 1000V
  • Power - Max: 625W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: D-3 Module
  • Supplier Device Package: D3
封装: D-3 Module
库存6,640
Standard
1200V (1.2kV)
131A
20 mOhm @ 100A, 20V
2.2V @ 5mA (Typ)
246nC @ 20V
4750pF @ 1000V
625W
-40°C ~ 150°C (TJ)
Chassis Mount
D-3 Module
D3
APTM120H29FG
Microsemi Corporation

MOSFET 4N-CH 1200V 34A SP6

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 34A
  • Rds On (Max) @ Id, Vgs: 348 mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 374nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 10300pF @ 25V
  • Power - Max: 780W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存7,072
Standard
1200V (1.2kV)
34A
348 mOhm @ 17A, 10V
5V @ 5mA
374nC @ 10V
10300pF @ 25V
780W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC60TDUM35PG
Microsemi Corporation

MOSFET 6N-CH 600V 72A SP6-P

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6-P
封装: SP6
库存7,056
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6-P
APTM50AM38STG
Microsemi Corporation

MOSFET 2N-CH 500V 90A SP4

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 90A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 45A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 246nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11200pF @ 25V
  • Power - Max: 694W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存6,080
Standard
500V
90A
45 mOhm @ 45A, 10V
5V @ 5mA
246nC @ 10V
11200pF @ 25V
694W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM100H45STG
Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 18A
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存7,776
Standard
1000V (1kV)
18A
540 mOhm @ 9A, 10V
5V @ 2.5mA
154nC @ 10V
4350pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTC60HM35T3G
Microsemi Corporation

MOSFET 4N-CH 600V 72A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 72A
  • Rds On (Max) @ Id, Vgs: 35 mOhm @ 72A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5.4mA
  • Gate Charge (Qg) (Max) @ Vgs: 518nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14000pF @ 25V
  • Power - Max: 416W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存6,928
Standard
600V
72A
35 mOhm @ 72A, 10V
3.9V @ 5.4mA
518nC @ 10V
14000pF @ 25V
416W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTC60DSKM24T3G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP3

  • FET Type: 2 N Channel (Dual Buck Chopper)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存4,720
Super Junction
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTC60AM242G
Microsemi Corporation

MOSFET 2N-CH 600V 95A SP2

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 95A
  • Rds On (Max) @ Id, Vgs: 24 mOhm @ 47.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 14400pF @ 25V
  • Power - Max: 462W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: Module
库存7,904
Standard
600V
95A
24 mOhm @ 47.5A, 10V
3.9V @ 5mA
300nC @ 10V
14400pF @ 25V
462W
-40°C ~ 150°C (TJ)
Chassis Mount
Module
-
APTM50H14FT3G
Microsemi Corporation

MOSFET 4N-CH 500V 26A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 26A
  • Rds On (Max) @ Id, Vgs: 168 mOhm @ 13A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V
  • Power - Max: 208W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存7,376
Standard
500V
26A
168 mOhm @ 13A, 10V
5V @ 1mA
72nC @ 10V
3259pF @ 25V
208W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM100A13SCG
Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存4,544
Standard
1000V (1kV)
65A
156 mOhm @ 32.5A, 10V
5V @ 6mA
562nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTC60AM18SCG
Microsemi Corporation

MOSFET 2N-CH 600V 143A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 143A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 71.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 1036nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
  • Power - Max: 833W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存7,376
Standard
600V
143A
18 mOhm @ 71.5A, 10V
3.9V @ 4mA
1036nC @ 10V
28000pF @ 25V
833W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTMC120AM55CT1AG
Microsemi Corporation

MOSFET 2N-CH 1200V 55A SP1

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 55A
  • Rds On (Max) @ Id, Vgs: 49 mOhm @ 40A, 20V
  • Vgs(th) (Max) @ Id: 2.2V @ 2mA (Typ)
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 1000V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存7,600
Standard
1200V (1.2kV)
55A
49 mOhm @ 40A, 20V
2.2V @ 2mA (Typ)
98nC @ 20V
1900pF @ 1000V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
APTM100A13SG
Microsemi Corporation

MOSFET 2N-CH 1000V 65A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 65A
  • Rds On (Max) @ Id, Vgs: 156 mOhm @ 32.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 562nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15200pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存6,864
Standard
1000V (1kV)
65A
156 mOhm @ 32.5A, 10V
5V @ 6mA
562nC @ 10V
15200pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6
APTM100H45SCTG
Microsemi Corporation

MOSFET 4N-CH 1000V 18A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1000V (1kV)
  • Current - Continuous Drain (Id) @ 25°C: 18A
  • Rds On (Max) @ Id, Vgs: 540 mOhm @ 9A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存5,776
Standard
1000V (1kV)
18A
540 mOhm @ 9A, 10V
5V @ 2.5mA
154nC @ 10V
4350pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM50HM65FT3G
Microsemi Corporation

MOSFET 4N-CH 500V 51A SP3

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 51A
  • Rds On (Max) @ Id, Vgs: 78 mOhm @ 25.5A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7000pF @ 25V
  • Power - Max: 390W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP3
  • Supplier Device Package: SP3
封装: SP3
库存6,720
Standard
500V
51A
78 mOhm @ 25.5A, 10V
5V @ 2.5mA
140nC @ 10V
7000pF @ 25V
390W
-40°C ~ 150°C (TJ)
Chassis Mount
SP3
SP3
APTM50HM75STG
Microsemi Corporation

MOSFET 4N-CH 500V 46A SP4

  • FET Type: 4 N-Channel (H-Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 46A
  • Rds On (Max) @ Id, Vgs: 90 mOhm @ 23A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
  • Power - Max: 357W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP4
  • Supplier Device Package: SP4
封装: SP4
库存6,016
Standard
500V
46A
90 mOhm @ 23A, 10V
5V @ 2.5mA
123nC @ 10V
5600pF @ 25V
357W
-40°C ~ 150°C (TJ)
Chassis Mount
SP4
SP4
APTM50AM24SG
Microsemi Corporation

MOSFET 2N-CH 500V 150A SP6

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 150A
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id: 5V @ 6mA
  • Gate Charge (Qg) (Max) @ Vgs: 434nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 19600pF @ 25V
  • Power - Max: 1250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP6
  • Supplier Device Package: SP6
封装: SP6
库存6,024
Standard
500V
150A
28 mOhm @ 75A, 10V
5V @ 6mA
434nC @ 10V
19600pF @ 25V
1250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP6
SP6