ROHM – New SiC power module achieves high level of reliability in extreme environments | 黑森尔电子
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ROHM – New SiC power module achieves high level of reliability in extreme environments

Technology Cover
发布日期: 2019-02-22, Rohm Semiconductor
ROHM has developed a SiC power module with a rated power of 1700V / 250A. This module has the highest level of reliability in the industry and can be optimized for inverter and converter applications, including outdoor power generation systems and industrial high-power power supplies. BSM250D17P2E004 uses new construction methods and coatings to stop dielectric breakdown and suppress the increase in leakage current. Therefore, even after 1000 hours under the high temperature and high humidity bias test, high reliability can be obtained, and the dielectric breakdown can be prevented even after 1000 hours. Ensures high voltage (1700V) operation even in severe temperature and humidity environments. By integrating the company's SiC MOSFET and SiC Schottky barrier diode into the same module and optimizing the internal structure, the on-resistance can be reduced by 10% compared to other SiC products of the same level. In any application, this can increase energy efficiency and reduce heat dissipation.

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