Maxim DS TVS DIODE

DS2433+

Maxim Integrated

IC EEPROM 4KBIT 1WIRE TO92-3

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 Long Body
• Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 Long Body

DS2423P+T&R

Maxim Integrated

IC SRAM 4KBIT 6TSOC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 4Kb (256 x 16 pages)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-LSOJ (0.148", 3.76mm Width)
• Supplier Device Package: 6-TSOC

封装: 6-LSOJ (0.148", 3.76mm Width)

DS2016R-100+

Maxim Integrated

IC SRAM 16KBIT 100NS 24SOIC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 24-SOIC

封装: 24-SOIC (0.295", 7.50mm Width)

DS1609-50+

Maxim Integrated

IC SRAM 2KBIT 50NS 24DIP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 2Kb (256 x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 50ns
• Access Time: 50ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-DIP (0.600", 15.24mm)
• Supplier Device Package: 24-PDIP

封装: 24-DIP (0.600", 15.24mm)

DS1350YP-100+

Maxim Integrated

IC NVSRAM 4MBIT 100NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

封装: 34-PowerCap? Module

DS1330ABP-100+

Maxim Integrated

IC NVSRAM 256KBIT 100NS 34PCM

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 34-PowerCap? Module
• Supplier Device Package: 34-PowerCap Module

封装: 34-PowerCap? Module

DS1220Y-200IND+

Maxim Integrated

IC NVSRAM 16KBIT 200NS 24EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 200ns
• Access Time: 200ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 24-EDIP

封装: 24-DIP Module (0.600", 15.24mm)

DS1220Y-200+

Maxim Integrated

IC NVSRAM 16KBIT 200NS 24DIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 200ns
• Access Time: 200ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 24-EDIP

封装: 24-DIP Module (0.600", 15.24mm)

DS2016-100+

Maxim Integrated

IC SRAM 16KBIT 100NS 24DIP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 2.7 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-DIP (0.600", 15.24mm)
• Supplier Device Package: 24-PDIP

封装: 24-DIP (0.600", 15.24mm)

DS2433S+T&R

Maxim Integrated

IC EEPROM 4KBIT 1WIRE 8SO

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.209", 5.30mm Width)

DS1609S-50+

Maxim Integrated

IC SRAM 2KBIT 50NS 24SOIC

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM - Dual Port, Asynchronous
• Memory Size: 2Kb (256 x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 50ns
• Access Time: 50ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 24-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 24-SOIC

封装: 24-SOIC (0.295", 7.50mm Width)

DS2433S+

Maxim Integrated

IC EEPROM 4KBIT 1WIRE 8SO

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.209", 5.30mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.209", 5.30mm Width)

DS1270W-100IND

Maxim Integrated

IC NVSRAM 16MBIT 100NS 36EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Mb (2M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 36-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 36-EDIP

封装: 36-DIP Module (0.600", 15.24mm)

DS1265W-100IND

Maxim Integrated

IC NVSRAM 8MBIT 100NS 36EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 8Mb (1M x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 36-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 36-EDIP

封装: 36-DIP Module (0.600", 15.24mm)

DS1250Y-100IND

Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 32-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

DS1250W-100IND

Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 32-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

DS1250AB-100IND

Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 4Mb (512K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 32-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

DS1249W-100IND

Maxim Integrated

IC NVSRAM 2MBIT 100NS 32EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 2Mb (256K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 32-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

DS1245W-100IND

Maxim Integrated

IC NVSRAM 1MBIT 100NS 32EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 1Mb (128K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 32-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

DS1230W-100IND

Maxim Integrated

IC NVSRAM 256KBIT 100NS 28EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 256Kb (32K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 100ns
• Access Time: 100ns
• Voltage - Supply: 3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

DS1225AD-70IND

Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

DS1225AD-70

Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.5 V ~ 5.5 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

DS1225AB-70IND

Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

DS1225AB-70

Maxim Integrated

IC NVSRAM 64KBIT 70NS 28EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 64Kb (8K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 70ns
• Access Time: 70ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: 0°C ~ 70°C (TA)
• Mounting Type: Through Hole
• Package / Case: 28-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

DS1220AB-150IND

Maxim Integrated

IC NVSRAM 16KBIT 150NS 24EDIP

• Memory Type: Non-Volatile
• Memory Format: NVSRAM
• Technology: NVSRAM (Non-Volatile SRAM)
• Memory Size: 16Kb (2K x 8)
• Memory Interface: Parallel
• Clock Frequency: -
• Write Cycle Time - Word, Page: 150ns
• Access Time: 150ns
• Voltage - Supply: 4.75 V ~ 5.25 V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Through Hole
• Package / Case: 24-DIP Module (0.600", 15.24mm)
• Supplier Device Package: 24-EDIP

封装: 24-DIP Module (0.600", 15.24mm)

DS2433D/T&R

Maxim Integrated

IC EEPROM 4KBIT 6FLIPCHIP

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 4Kb (256 x 16)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XBGA, FCBGA
• Supplier Device Package: 6-FlipChip (2.82x2.54)

封装: 6-XBGA, FCBGA

DS2430AP/T&R

Maxim Integrated

IC EEPROM 256BIT 1WIRE 6TSOC

• Memory Type: Non-Volatile
• Memory Format: EEPROM
• Technology: EEPROM
• Memory Size: 256b (32 x 8)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 15µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-LSOJ (0.148", 3.76mm Width)
• Supplier Device Package: 6-TSOC

封装: 6-LSOJ (0.148", 3.76mm Width)

DS2423D/T&R

Maxim Integrated

IC SRAM 4KBIT 6FLIPCHIP

• Memory Type: Volatile
• Memory Format: SRAM
• Technology: SRAM
• Memory Size: 4Kb (256 x 16 pages)
• Memory Interface: 1-Wire?
• Clock Frequency: -
• Write Cycle Time - Word, Page: -
• Access Time: 2µs
• Voltage - Supply: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-XBGA, FCBGA
• Supplier Device Package: 6-FlipChip (2.82x2.54)

封装: 6-XBGA, FCBGA