FMMT718TA

Diodes Incorporated

TRANS PNP 20V 1.5A SOT23-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1.5A
• Voltage - Collector Emitter Breakdown (Max): 20V
• Vce Saturation (Max) @ Ib, Ic: 220mV @ 50mA, 1.5A
• Current - Collector Cutoff (Max): 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
• Power - Max: 625mW
• Frequency - Transition: 180MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

MMBT3904LT1G

ON Semiconductor

TRANS NPN 40V 0.2A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 300mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)

封装: TO-236-3, SC-59, SOT-23-3

MMBT2222ALT1G

ON Semiconductor

TRANS NPN 40V 0.6A SOT23

• Transistor Type: NPN
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 225mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

MMBT2907ALT1G

ON Semiconductor

TRANS PNP 60V 0.6A SOT23

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 600mA
• Voltage - Collector Emitter Breakdown (Max): 60V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
• Current - Collector Cutoff (Max): 10nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
• Power - Max: 300mW
• Frequency - Transition: 200MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3 (TO-236)

封装: TO-236-3, SC-59, SOT-23-3

DTC114EM3T5G

ON Semiconductor

TRANS PREBIAS NPN 260MW SOT723

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: -
• Power - Max: 260mW
• Mounting Type: Surface Mount
• Package / Case: SOT-723
• Supplier Device Package: SOT-723

封装: SOT-723

DTC114EETL

Rohm Semiconductor

TRANS PREBIAS NPN 150MW EMT3

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 50mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75, SOT-416
• Supplier Device Package: EMT3

封装: SC-75, SOT-416

PDTC143ZT,235

Nexperia USA Inc.

TRANS PREBIAS NPN 250MW TO236AB

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 1µA
• Frequency - Transition: 230MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: TO-236AB (SOT23)

封装: TO-236-3, SC-59, SOT-23-3

SD1127

Microsemi Corporation

TRANSISTOR BIPO TO-39

• Transistor Type: NPN
• Voltage - Collector Emitter Breakdown (Max): 18V
• Frequency - Transition: 175MHz
• Noise Figure (dB Typ @ f): -
• Gain: 12dB
• Power - Max: 8W
• DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
• Current - Collector (Ic) (Max): 640mA
• Operating Temperature: 200°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-205AD, TO-39-3 Metal Can
• Supplier Device Package: TO-39

封装: TO-205AD, TO-39-3 Metal Can

L6221AD

STMicroelectronics

TRANS 4NPN DARL 50V 1.8A 20SOIC

• Transistor Type: 4 NPN Darlington (Quad)
• Current - Collector (Ic) (Max): 1.8A
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 1.8A
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: -
• Power - Max: 1W
• Frequency - Transition: -
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (0.295", 7.50mm Width)
• Supplier Device Package: 20-SO

封装: 20-SOIC (0.295", 7.50mm Width)

MD2369A

Central Semiconductor Corp

TRANS 2NPN 40V 0.5A TO-78

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: -
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: -
• Frequency - Transition: 500MHz
• Operating Temperature: -
• Mounting Type: Through Hole
• Package / Case: TO-78-6 Metal Can
• Supplier Device Package: TO-78-6

封装: TO-78-6 Metal Can

PMBT3904VS,115

Nexperia USA Inc.

TRANS 2NPN 40V 0.2A SOT666

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 360mW
• Frequency - Transition: 300MHz
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-666
• Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

MPQ7053

Central Semiconductor Corp

TRANS 2NPN/2PNP 250V 0.5A

• Transistor Type: 2 NPN, 2 PNP
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 250V
• Vce Saturation (Max) @ Ib, Ic: 700mV @ 2mA, 20mA
• Current - Collector Cutoff (Max): 250nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
• Power - Max: 750mW
• Frequency - Transition: 50MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 14-DIP (0.300", 7.62mm)
• Supplier Device Package: TO-116

封装: 14-DIP (0.300", 7.62mm)

BC847PN-7-F

Diodes Incorporated

TRANS NPN/PNP 45V 0.1A SOT363

• Transistor Type: NPN, PNP
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 45V
• Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA / 650mV @ 5mA, 100mA
• Current - Collector Cutoff (Max): 15nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 300MHz, 200MHz
• Operating Temperature: -65°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

MBT3904DW1T1G

ON Semiconductor

TRANS 2NPN 40V 0.2A SC88

• Transistor Type: 2 NPN (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

MBT3906DW1T1G

ON Semiconductor

TRANS 2PNP 40V 0.2A SC88

• Transistor Type: 2 PNP (Dual)
• Current - Collector (Ic) (Max): 200mA
• Voltage - Collector Emitter Breakdown (Max): 40V
• Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 250MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

ULN2804A

STMicroelectronics

TRANS 8NPN DARL 50V 0.5A 18DIP

• Transistor Type: 8 NPN Darlington
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500µA, 350mA
• Current - Collector Cutoff (Max): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V
• Power - Max: 2.25W
• Frequency - Transition: -
• Operating Temperature: -20°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Package / Case: 18-DIP (0.300", 7.62mm)
• Supplier Device Package: 18-DIP

封装: 18-DIP (0.300", 7.62mm)

TIC246M-S

Bourns Inc.

TRIAC 600V 16A TO220

• Triac Type: Standard
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 16A
• Voltage - Gate Trigger (Vgt) (Max): 2V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 125A @ 50Hz
• Current - Gate Trigger (Igt) (Max): 50mA
• Current - Hold (Ih) (Max): 40mA
• Configuration: Single
• Operating Temperature: -40°C ~ 110°C (TC)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220

封装: TO-220-3

BTA10-700BRG

STMicroelectronics

TRIAC 700V 10A TO220AB

• Triac Type: Standard
• Voltage - Off State: 700V
• Current - On State (It (RMS)) (Max): 10A
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 100A, 105A
• Current - Gate Trigger (Igt) (Max): 50mA
• Current - Hold (Ih) (Max): 50mA
• Configuration: Single
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

BTB06-600SWRG

STMicroelectronics

TRIAC SENS GATE 600V 6A TO220AB

• Triac Type: Logic - Sensitive Gate
• Voltage - Off State: 600V
• Current - On State (It (RMS)) (Max): 6A
• Voltage - Gate Trigger (Vgt) (Max): 1.3V
• Current - Non Rep. Surge 50, 60Hz (Itsm): 60A, 63A
• Current - Gate Trigger (Igt) (Max): 10mA
• Current - Hold (Ih) (Max): 15mA
• Configuration: Single
• Operating Temperature: -40°C ~ 125°C (TJ)
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB

封装: TO-220-3

S6010RTP

Littelfuse Inc.

SCR SENS 600V 10A TO220

• Voltage - Off State: 600V
• Voltage - Gate Trigger (Vgt) (Max): 1.5V
• Current - Gate Trigger (Igt) (Max): 15mA
• Voltage - On State (Vtm) (Max): 1.6V
• Current - On State (It (AV)) (Max): 6.4A
• Current - On State (It (RMS)) (Max): 10A
• Current - Hold (Ih) (Max): 30mA
• Current - Off State (Max): 10µA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 83A, 100A
• SCR Type: Standard Recovery
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Through Hole
• Package / Case: TO-220-3
• Supplier Device Package: TO-220AB-R

封装: TO-220-3

ND431825

Powerex Inc.

SCR MOD ISO DUAL 1800V 250A

• Structure: Series Connection - All SCRs
• Number of SCRs, Diodes: 2 SCRs
• Voltage - Off State: 1800V
• Current - On State (It (AV)) (Max): 250A
• Current - On State (It (RMS)) (Max): 393A
• Voltage - Gate Trigger (Vgt) (Max): 3V
• Current - Gate Trigger (Igt) (Max): 150mA
• Current - Non Rep. Surge 50, 60Hz (Itsm): 8800A @ 60Hz
• Current - Hold (Ih) (Max): -
• Operating Temperature: -40°C ~ 130°C (TJ)
• Mounting Type: Chassis Mount
• Package / Case: POW-R-BLOK? Module

封装: POW-R-BLOK? Module

K1300E70

Littelfuse Inc.

SIDAC 120-138V 1A TO92

• Voltage - Breakover: 120 ~ 138V
• Current - Breakover: 10µA
• Current - Hold (Ih) (Max): 150mA
• Current - Peak Output: 1A
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: TO-226-2, TO-92-2 (TO-226AC)
• Supplier Device Package: TO-92

封装: TO-226-2, TO-92-2 (TO-226AC)

SMDB3

STMicroelectronics

DIAC 28-36V 1A SOT23-3

• Voltage - Breakover: 28 ~ 36V
• Current - Breakover: 10µA
• Current - Hold (Ih) (Max): -
• Current - Peak Output: 1A
• Operating Temperature: -40°C ~ 125°C (TJ)
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

PM200DV1A120

Powerex Inc.

MOD IPM V1 DUAL 200A 1200V

• Type: IGBT
• Configuration: 1 Phase Inverter
• Current: 200A
• Voltage: 1200V
• Voltage - Isolation: 2500Vrms
• Package / Case: Power Module

封装: Power Module

PS22056

Powerex Inc.

MOD IPM 1200V 25A DIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 25A
• Voltage: 1200V
• Voltage - Isolation: 2500VDC
• Package / Case: 28-PowerDIP Module (1.882", 47.80mm)

封装: 28-PowerDIP Module (1.882", 47.80mm)

PS21A79

Powerex Inc.

MOD IPM 600V 50A LARGE DIP

• Type: IGBT
• Configuration: 3 Phase
• Current: 50A
• Voltage: 600V
• Voltage - Isolation: 2500VDC
• Package / Case: 42-PowerDip Module (1.404", 35.67mm)

封装: 42-PowerDip Module (1.404", 35.67mm)

FSAM30SH60A

Fairchild/ON Semiconductor

SMART POWER MODULE 30A SPM32-AA

• Type: IGBT
• Configuration: 3 Phase
• Current: 30A
• Voltage: 600V
• Voltage - Isolation: 2500Vrms
• Package / Case: 32-PowerDIP Module (1.370", 34.80mm)

封装: 32-PowerDIP Module (1.370", 34.80mm)

BZV55C5V1

Microsemi Corporation

DIODE ZENER 5.1V DO213AA

• Voltage - Zener (Nom) (Vz): 5.1V
• Tolerance: ±6%
• Power - Max: -
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 2µA @ 2V
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 200mA
• Operating Temperature: -65°C ~ 175°C
• Mounting Type: Surface Mount
• Package / Case: DO-213AA (Glass)
• Supplier Device Package: DO-213AA

封装: DO-213AA (Glass)