STMicroelectronics Introduces Page EEPROM 2-in-1 Memory - 行业趋势 | 黑森尔电子
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STMicroelectronics Introduces Page EEPROM 2-in-1 Memory

发表于 十月 16, 2024

STMicroelectronics has introduced its new Page EEPROM, which combines the energy efficiency and durability of EEPROM technology with the storage capacity and read/write speed of flash memory. This hybrid memory solution is ideal for applications that face extreme space and power constraints, providing embedded systems with storage options that meet rising demands for both capacity and performance.
Embedded systems increasingly support complex functionalities and run data-intensive edge AI algorithms. ST's new memory addresses the growing storage needs in embedded applications. For example, in behind-the-ear hearing aids, Page EEPROM reduces the bill of materials cost, making the devices thinner and more comfortable to wear.
Beyond wearable devices, Page EEPROM is also well-suited for use in medical devices, asset trackers, e-bikes, and other industrial and consumer products. Philippe Ganivet, STMicroelectronics' EEPROM Product Line Manager, noted, “As smart edge technologies rapidly advance, the market is evolving in its need for embedded memory with high capacity, performance, and power efficiency. Our new Page EEPROM is an ultra-low-power memory solution that pairs perfectly with battery-powered IoT modules and microcontrollers.”
BitFlip Engineering is one of the first users of the new memory chip series. The company's owner, Patrick Kusbel, shared, “ST's Page EEPROM is a truly versatile non-volatile memory solution. As we develop our next-generation flagship products, including GPS trackers, IoT devices, and designs demanding high performance, reliability, small size, and low power, the new series helps us reach our ambitious goals. The M95P’s read speed is 50 times that of previous memory we used, while its power consumption is reduced by 90%, reliability has increased fourfold, and endurance has reached 500,000 write cycles, compared to just 100,000 with our prior solution—a revolutionary improvement.”
The Page EEPROM series offers capacities of 8Mbit, 16Mbit, and 32Mbit, significantly higher than standard EEPROM products. Its embedded intelligent page management allows byte-level writes, suitable for data logging, while also supporting page/sector/block erasure and up to 512-byte page write operations, ideal for efficient Over-the-Air (OTA) firmware updates. It also enables cache loading with simultaneous writing to multiple pages, which reduces software installation time during production. The memory boasts a read speed of 320 Mbit/s—about 16 times faster than standard EEPROM—and an endurance of 500,000 write cycles, several times greater than conventional serial flash.
Page EEPROM also features innovative peak current control, reducing power supply noise and extending battery life in