Name: GS120R045Q4
Brand: Goford Semiconductor
SKU: GS120R045Q4
Availability: InStock
Rating: 5 (126 reviews)

GS120R045Q4

仅供参考

零件编号	GS120R045Q4
制造商	Goford Semiconductor
描述	SiC MOSFET N-CH 1200V 60A TO-24
数据表
封装	-
ECAD
库存	0 piece(s)
单价	Request a Quote
交货时间	待确认
预计送达时间	十一月 3 - 十一月 8 (选择速递服务)
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GS120R045Q4参数

制造商	Goford Semiconductor
类别	分立半导体产品 - 晶体管 - FET，MOSFET - 单
封装	-
ECAD
系列	-
FET类型	N-Channel
技术	SiCFET (Silicon Carbide)
漏极到源极电压（Vdss）	1200 V
电流 - 连续漏极（Id）@ 25°C	60A (Tc)
驱动电压（Max Rds On，Min Rds On）	18V
Vgs（th）（Max）@Id	4V @ 10mA
栅极电荷（Qg）（最大值）@Vgs	-
输入电容（Ciss）（最大值）@ Vds	2565 pF @ 1000 V
Vgs（最大）	-10V, +20V
FET功能	-
功耗（最大值）	395W (Tc)
Rds On（Max）@ Id，Vgs	52mOhm @ 20A, 18V
工作温度	-55°C ~ 175°C (TJ)
安装类型	Through Hole
供应商设备包	TO-247-4L
包/箱	TO-247-4

GS120R045Q4 Packaging

GS120R045Q4 FAQ

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6. What is the process for return or replacement of GS120R045Q4?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GS120R045Q4 we delivered, we will accept the replacement or return of the GS120R045Q4 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GS120R045Q4.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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