Name: GT025N06AM6
Brand: Goford Semiconductor
SKU: GT025N06AM6
Availability: InStock
Rating: 5 (170 reviews)

GT025N06AM6

仅供参考

零件编号	GT025N06AM6
制造商	Goford Semiconductor
描述	N60V,170A,RD<2.0M@10V,VTH1.2V~2.
数据表
封装	-
ECAD
库存	0 piece(s)
单价	Request a Quote
交货时间	待确认
预计送达时间	二月 13 - 二月 18 (选择速递服务)
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GT025N06AM6参数

制造商	Goford Semiconductor
类别	分立半导体产品 - 晶体管 - FET，MOSFET - 单
封装	-
ECAD
系列	-
FET类型	N-Channel
技术	MOSFET (Metal Oxide)
漏极到源极电压（Vdss）	60 V
电流 - 连续漏极（Id）@ 25°C	170A (Tc)
驱动电压（Max Rds On，Min Rds On）	4.5V, 10V
Vgs（th）（Max）@Id	2.5V @ 250µA
栅极电荷（Qg）（最大值）@Vgs	70 nC @ 10 V
输入电容（Ciss）（最大值）@ Vds	5058 pF @ 30 V
Vgs（最大）	±20V
FET功能	-
功耗（最大值）	215W (Tc)
Rds On（Max）@ Id，Vgs	2mOhm @ 20A, 10V
工作温度	-55°C ~ 150°C (TJ)
安装类型	Surface Mount
供应商设备包	TO-263-6
包/箱	TO-263-7, D2PAK (6 Leads + Tab)

GT025N06AM6 Packaging

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GT025N06AM6.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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