* Please refer to the English Version as our Official Version.
| 零件编号 | IPD65R660CFDBTMA1 |
|---|---|
| 制造商 | Infineon Technologies |
| 描述 | MOSFET N-CH 650V 6A TO252 |
| 数据表 | |
| 封装 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| ECAD |
|
| 库存 | 2,208 piece(s) |
| 单价 | Request a Quote |
| 交货时间 | 待确认 |
| 预计送达时间 | 二月 12 - 二月 17 (选择速递服务) |
| 请求报价 |
|
| 支付方式 | |
| 送货服务 |
| 制造商 | Infineon Technologies |
| 类别 | 分立半导体产品 - 晶体管 - FET，MOSFET - 单 |
| 封装 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| ECAD |
|
| 系列 | CoolMOS? |
| FET类型 | N-Channel |
| 技术 | MOSFET (Metal Oxide) |
| 漏极到源极电压（Vdss） | 650V |
| 电流 - 连续漏极（Id）@ 25°C | 6A (Tc) |
| 驱动电压（Max Rds On，Min Rds On） | 10V |
| Vgs（th）（Max）@Id | 4.5V @ 200µA |
| 栅极电荷（Qg）（最大值）@Vgs | 22nC @ 10V |
| 输入电容（Ciss）（最大值）@ Vds | 615pF @ 100V |
| Vgs（最大） | ±20V |
| FET功能 | - |
| 功耗（最大值） | 62.5W (Tc) |
| Rds On（Max）@ Id，Vgs | 660 mOhm @ 2.1A, 10V |
| 工作温度 | -55°C ~ 150°C (TJ) |
| 安装类型 | Surface Mount |
| 供应商设备包 | PG-TO252-3 |
| 包/箱 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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|
381EL271M450A452 | Cornell Dubilier Electronics (CDE), CAP ALUM 270UF 20% 450V SNAP, Radial, Can - Snap-In, CoolMOS? | 查看 |
|
MCZ33905CS3EK | NXP, IC SBC CAN HS 3.3V 32SOIC, 32-SSOP (0.295", 7.50mm Width) Exposed Pad, CoolMOS? | 查看 |
 
|
MAX4567ESE | Maxim Integrated, IC SW DUAL VIDEO BIDIRECT 16SOIC, 16-SOIC (0.154", 3.90mm Width), CoolMOS? | 查看 |
|
80010300333504 | Dialight, INDICATOR PRESS TO TEST, -, CoolMOS? | 查看 |
|
87900-150HLF | Amphenol FCI, HEADER BERGSTIK, -, CoolMOS? | 查看 |
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86-553159-19P | Amphenol Aerospace Operations, LJT 19C 19#12 PIN RECP, -, CoolMOS? | 查看 |
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MS3470W12-10S-LC | TE Connectivity Deutsch Connectors, CONN RCPT HSG FMALE 10POS PNL MT, -, CoolMOS? | 查看 |
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BACC63CB18-8P6H | Cinch Connectivity Solutions, CONN PLUG HSG MALE 8POS INLINE, -, CoolMOS? | 查看 |
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ABM25DRTH-S13 | Sullins Connector Solutions, CONN EDGE DUAL FMALE 50POS 0.156, -, CoolMOS? | 查看 |
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SI5338H-B06945-GMR | Silicon Labs, I2C CONTROL, 4-OUTPUT, ANY FREQU, 24-VFQFN Exposed Pad, CoolMOS? | 查看 |
我们保证100％的客户满意度。
我们经验丰富的销售团队和技术支持团队支持我们的服务以满足所有客户。
我们提供90天保修。
如果您收到的物品质量不合格，我们将负责您的退款或更换，但物品必须以原始状态退回。
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 D# IPD65R660CFDBTMA1 |
Infineon Technologies AG |
Trans MOSFET N-CH 700V 6A 3-Pin TO-252 T/R - Bulk (Alt: IPD65R660CFDBTMA1) |
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 D# 2156-IPD65R660CFDBTMA1-ND |
Rochester Electronics LLC |
MOSFET N-CH 650V 6A TO252-3 |
2500 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 D# 2726057RL |
Infineon Technologies AG |
MOSFET, N-CH, 650V, 6A, TO-252-3 RoHS: Compliant
Min Qty: 1
Container: Reel
|
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 |
Infineon Technologies AG |
OEM/CM QUOTES ONLY | NO BROKERS |
72500 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFD D# 726-IPD65R660CFD |
Infineon Technologies AG |
MOSFET N-Ch 650V 6A DPAK-2 CoolMOS CFD2 RoHS: Compliant
|
2908 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 D# 13AC9050 |
Infineon Technologies AG |
MOSFET, N-CH, 650V, 6A, TO-252-3, Transistor Polarity:N Channel, Continuous Drain Current Id:6A, Drain Source Voltage Vds:650V, On Resistance Rds(on):0.594ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power DissipationRoHS Compliant: Yes RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1304 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 |
Infineon Technologies AG |
IPD65R660 - 650V and 700V CoolMOS N-Channel Power MOSFET RoHS: Compliant
|
2500 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 |
Infineon Technologies AG |
OEM/CM ONLY |
62516 |
| 零件编号 | 制造商 | 描述 | 库存 |
IPD65R660CFDBTMA1 D# 2726057 |
Infineon Technologies AG |
MOSFET, N-CH, 650V, 6A, TO-252-3 RoHS: Compliant
Min Qty: 1
Container: Cut Tape
|
1310 |
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