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NVMFS5832NLWFT1G

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NVMFS5832NLWFT1G

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零件编号 NVMFS5832NLWFT1G
制造商 ON Semiconductor
描述 MOSFET N-CH 40V 120A SO8FL
数据表
封装 8-PowerTDFN
ECAD
库存 18,000 piece(s)
单价 Request a Quote
交货时间 可立即发货
预计送达时间 十二月 4 - 十二月 9 (选择速递服务)
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NVMFS5832NLWFT1G参数

制造商ON Semiconductor
类别分立半导体产品 - 晶体管 - FET,MOSFET - 单
封装8-PowerTDFN
ECAD
系列-
FET类型N-Channel
技术MOSFET (Metal Oxide)
漏极到源极电压(Vdss)40V
电流 - 连续漏极(Id)@ 25°C21A (Ta)
驱动电压(Max Rds On,Min Rds On)4.5V, 10V
Vgs(th)(Max)@Id2.4V @ 250µA
栅极电荷(Qg)(最大值)@Vgs51nC @ 10V
输入电容(Ciss)(最大值)@ Vds2700pF @ 25V
Vgs(最大)±20V
FET功能-
功耗(最大值)3.7W (Ta), 127W (Tc)
Rds On(Max)@ Id,Vgs4.2 mOhm @ 20A, 10V
工作温度-55°C ~ 175°C (TJ)
安装类型Surface Mount
供应商设备包5-DFN (5x6) (8-SOFL)
包/箱8-PowerTDFN

NVMFS5832NLWFT1G Packaging

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