Name: RD3L08BGNTL
Brand: Rohm Semiconductor
SKU: RD3L08BGNTL
Availability: InStock
Rating: 5 (151 reviews)

RD3L08BGNTL

仅供参考

零件编号	RD3L08BGNTL
制造商	Rohm Semiconductor
描述	MOSFET N-CH 60V 80A TO252
数据表
封装	-
ECAD
库存	4,239 piece(s)
单价	Request a Quote
交货时间	待确认
预计送达时间	七月 1 - 七月 6 (选择速递服务)
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RD3L08BGNTL参数

制造商	Rohm Semiconductor
类别	分立半导体产品 - 晶体管 - FET，MOSFET - 单
封装	-
ECAD
系列	-
FET类型	N-Channel
技术	MOSFET (Metal Oxide)
漏极到源极电压（Vdss）	60 V
电流 - 连续漏极（Id）@ 25°C	80A (Tc)
驱动电压（Max Rds On，Min Rds On）	4.5V, 10V
Vgs（th）（Max）@Id	2.5V @ 100µA
栅极电荷（Qg）（最大值）@Vgs	71 nC @ 10 V
输入电容（Ciss）（最大值）@ Vds	3620 pF @ 30 V
Vgs（最大）	±20V
FET功能	-
功耗（最大值）	119W (Tc)
Rds On（Max）@ Id，Vgs	5.5mOhm @ 80A, 10V
工作温度	150°C (TJ)
安装类型	Surface Mount
供应商设备包	TO-252
包/箱	TO-252-3, DPAK (2 Leads + Tab), SC-63

RD3L08BGNTL Packaging

RD3L08BGNTL FAQ

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RD3L08BGNTL.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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