Name: SCT2280KEHRC11
Brand: Rohm Semiconductor
SKU: SCT2280KEHRC11
Availability: InStock
Rating: 5 (71 reviews)

SCT2280KEHRC11

仅供参考

零件编号	SCT2280KEHRC11
制造商	Rohm Semiconductor
描述	1200V, 14A, THD, SILICON-CARBIDE
数据表
封装	-
ECAD
库存	1,350 piece(s)
单价	Request a Quote
交货时间	待确认
预计送达时间	十二月 30 - 一月 4 (选择速递服务)
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SCT2280KEHRC11参数

制造商	Rohm Semiconductor
类别	分立半导体产品 - 晶体管 - FET，MOSFET - 单
封装	-
ECAD
系列	-
FET类型	N-Channel
技术	SiCFET (Silicon Carbide)
漏极到源极电压（Vdss）	1200 V
电流 - 连续漏极（Id）@ 25°C	14A (Tc)
驱动电压（Max Rds On，Min Rds On）	18V
Vgs（th）（Max）@Id	4V @ 1.4mA
栅极电荷（Qg）（最大值）@Vgs	36 nC @ 400 V
输入电容（Ciss）（最大值）@ Vds	667 pF @ 800 V
Vgs（最大）	+22V, -6V
FET功能	-
功耗（最大值）	108W (Tc)
Rds On（Max）@ Id，Vgs	364mOhm @ 4A, 18V
工作温度	175°C (TJ)
安装类型	Through Hole
供应商设备包	TO-247N
包/箱	TO-247-3

SCT2280KEHRC11 Packaging

SCT2280KEHRC11 FAQ

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We have a professional and experienced quality control team to strictly verify and test the SCT2280KEHRC11. All suppliers must pass our qualification reviews before they can publish their products including SCT2280KEHRC11 on Heisener; we pay more attention to the channels and quality of SCT2280KEHRC11 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.
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6. What is the process for return or replacement of SCT2280KEHRC11?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SCT2280KEHRC11.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations
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