* Please refer to the English Version as our Official Version.
| 零件编号 | SI4800BDY-T1-GE3 |
|---|---|
| 制造商 | Vishay Siliconix |
| 描述 | MOSFET N-CH 30V 6.5A 8-SOIC |
| 数据表 | |
| 封装 | 8-SOIC (0.154", 3.90mm Width) |
| ECAD |
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| 库存 | 648,240 piece(s) |
| 单价 | Request a Quote |
| 交货时间 | 可立即发货 |
| 预计送达时间 | 十一月 25 - 十一月 30 (选择速递服务) |
| 请求报价 |
|
| 支付方式 | |
| 送货服务 |
| 制造商 | Vishay Siliconix |
| 类别 | 分立半导体产品 - 晶体管 - FET，MOSFET - 单 |
| 封装 | 8-SOIC (0.154", 3.90mm Width) |
| ECAD |
|
| 系列 | TrenchFET? |
| FET类型 | N-Channel |
| 技术 | MOSFET (Metal Oxide) |
| 漏极到源极电压（Vdss） | 30V |
| 电流 - 连续漏极（Id）@ 25°C | 6.5A (Ta) |
| 驱动电压（Max Rds On，Min Rds On） | 4.5V, 10V |
| Vgs（th）（Max）@Id | 1.8V @ 250µA |
| 栅极电荷（Qg）（最大值）@Vgs | 13nC @ 5V |
| 输入电容（Ciss）（最大值）@ Vds | - |
| Vgs（最大） | ±25V |
| FET功能 | - |
| 功耗（最大值） | 1.3W (Ta) |
| Rds On（Max）@ Id，Vgs | 18.5 mOhm @ 9A, 10V |
| 工作温度 | -55°C ~ 150°C (TJ) |
| 安装类型 | Surface Mount |
| 供应商设备包 | 8-SO |
| 包/箱 | 8-SOIC (0.154", 3.90mm Width) |
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VS-HFA08TB60PBF | Vishay Semiconductor Diodes Division, DIODE GEN PURP 600V 8A TO220AC, TO-220-2, TrenchFET? | 查看 |
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MBRF400150R | GeneSiC Semiconductor, DIODE SCHOTTKY 150V 200A TO244AB, TO-244AB, TrenchFET? | 查看 |
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ISL6416IA-TK | Intersil, IC REG LIN 1.8V/2.8V/2.8V 16QSOP, 16-SSOP (0.154", 3.90mm Width), TrenchFET? | 查看 |
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LM3S5791-IBZ80-C1 | Texas Instruments, IC MCU 32BIT 128KB FLASH 108BGA, 108-LFBGA, TrenchFET? | 查看 |
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RWR81SR160DRB12 | Vishay Dale, RES 0.16 OHM 1W 0.5% WW AXIAL, Axial, TrenchFET? | 查看 |
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RG1005V-2261-B-T5 | Susumu, RES SMD 2.26KOHM 0.1% 1/16W 0402, 0402 (1005 Metric), TrenchFET? | 查看 |
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RNCF0402BTC10K0 | Stackpole Electronics Inc., RES SMD 10K OHM 0.1% 1/16W 0402, 0402 (1005 Metric), TrenchFET? | 查看 |
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CDRH125/LDNP-100NC | Sumida America Components Inc., FIXED IND 10UH 4.6A 29 MOHM SMD, Nonstandard, TrenchFET? | 查看 |
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1762073001 | Weidmuller, TERM BLOCK HDR 9POS 90DEG 3.5MM, -, TrenchFET? | 查看 |
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D38999/24ZG39PA-LC | Amphenol Aerospace Operations, CONN RCPT HSNG MALE 39POS PNL MT, -, TrenchFET? | 查看 |
我们保证100％的客户满意度。
我们经验丰富的销售团队和技术支持团队支持我们的服务以满足所有客户。
我们提供90天保修。
如果您收到的物品质量不合格，我们将负责您的退款或更换，但物品必须以原始状态退回。
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# V72:2272_09216570 |
Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant
|
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3) |
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) |
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R (Alt: SI4800BDY-T1-GE3) |
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies | 3089 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Siliconix |
MOSFET N-CH 30V 6.5A 8-SOIC |
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
N VDS=30V VGS=25V ID=6.5A P=1.3W |
6111 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDYT1GE3 |
Vishay Intertechnologies |
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant
|
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# SI4800BDY-T1-GE3CT-ND |
Vishay Siliconix |
MOSFET N-CH 30V 6.5A 8SO |
4513 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
In stock shipping within 2days |
18423 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
N-CH REDUCED QG, FAST SWITCHING MOSF RoHS: Compliant
pbFree: Yes
|
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDYT1GE3 |
Vishay Intertechnologies |
OEM/CM QUOTES ONLY | NO BROKERS |
8925 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
OEM/CM Immediate delivery |
76325 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# 781-SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V RoHS: Compliant
|
123 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# 16P3753 |
Vishay Intertechnologies |
N CHANNEL MOSFET, 30V, 9A, SOIC, Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, On Resistance Rds(on):0.03ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:25V RoHS Compliant: Yes RoHS: Compliant
Min Qty: 2500
Container: Cut Tape
|
0 |
SI4800BDY-T1-GE3. D# 16AC0256 |
Vishay Intertechnologies |
Transistor Polarity:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:9A, On Resistance Rds(on):0.03ohm, Transistor Mounting:Surface Mount, Rds(on) Test Voltage Vgs:25V, Threshold Voltage Vgs:25V, No. of Pins:8PinsRoHS Compliant: No RoHS: Not Compliant
Min Qty: 2500
Container: TAPE & REEL - FULL
|
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# NS-SI4800BDY-T1-GE3 |
Vishay Siliconix |
OEM/CM ONLY |
2596 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 30V, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA |
50 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDYT1GE3 |
Vishay Siliconix |
OEM/CM ONLY |
3155 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Intertechnologies |
IN stock Immediate delivery |
76310 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Huntington |
shipping today |
12496 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 D# 35140026 |
Vishay Intertechnologies |
Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R RoHS: Compliant
|
0 |
| 零件编号 | 制造商 | 描述 | 库存 |
SI4800BDY-T1-GE3 |
Vishay Huntington |
MOSFET N-CH 30V 6.5A 8-SOIC |
59243 |
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