Name: TJ90S04M3L-LQ
Brand: Toshiba Semiconductor and Storage
SKU: TJ90S04M3L,LQ
Availability: InStock
Rating: 5 (183 reviews)

TJ90S04M3L-LQ

仅供参考

零件编号	TJ90S04M3L-LQ
制造商	Toshiba Semiconductor and Storage
描述	PB-F POWER MOSFET TRANSISTOR DPA
数据表
封装	-
ECAD
库存	504 piece(s)
单价	Request a Quote
交货时间	待确认
预计送达时间	一月 19 - 一月 24 (选择速递服务)
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TJ90S04M3L-LQ参数

制造商	Toshiba Semiconductor and Storage
类别	分立半导体产品 - 晶体管 - FET，MOSFET - 单
封装	-
ECAD
系列	U-MOSVI
FET类型	P-Channel
技术	MOSFET (Metal Oxide)
漏极到源极电压（Vdss）	40 V
电流 - 连续漏极（Id）@ 25°C	90A (Ta)
驱动电压（Max Rds On，Min Rds On）	4.5V, 10V
Vgs（th）（Max）@Id	2V @ 1mA
栅极电荷（Qg）（最大值）@Vgs	172 nC @ 10 V
输入电容（Ciss）（最大值）@ Vds	7700 pF @ 10 V
Vgs（最大）	+10V, -20V
FET功能	-
功耗（最大值）	180W (Tc)
Rds On（Max）@ Id，Vgs	4.3mOhm @ 45A, 10V
工作温度	175°C
安装类型	Surface Mount
供应商设备包	DPAK+
包/箱	TO-252-3, DPAK (2 Leads + Tab), SC-63

TJ90S04M3L-LQ Packaging

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6. What is the process for return or replacement of TJ90S04M3L-LQ?

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(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of TJ90S04M3L-LQ.

(3)The PartNo is unused and only in the original unpacked packaging.

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(1)Inform us within 90 days

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