Diodes Incorporated 产品

DMP3036SSS-13

Diodes Incorporated

MOSFET P-CH 30V 19.5A 8-SO

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 1.4W (Ta)
• Rds On (Max) @ Id, Vgs: 20 mOhm @ 9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

2N7002DWQ-7-F

Diodes Incorporated

MOSFET 2N-CH 60V 0.23A SOT363

• FET Type: 2 N-Channel (Dual)
• FET Feature: Standard
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 230mA
• Rds On (Max) @ Id, Vgs: 7.5 Ohm @ 50mA, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Power - Max: 310mW
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

DMP3085LSD-13

Diodes Incorporated

MOSFET 2P-CH 30V 3.9A 8SO

• FET Type: 2 P-Channel (Dual)
• FET Feature: Logic Level Gate
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 3.9A
• Rds On (Max) @ Id, Vgs: 70 mOhm @ 5.3A, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 563pF @ 25V
• Power - Max: 1.1W
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

2DB1132P-13

Diodes Incorporated

TRANS PNP 32V 1A SOT89-3

• Transistor Type: PNP
• Current - Collector (Ic) (Max): 1A
• Voltage - Collector Emitter Breakdown (Max): 32V
• Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 3V
• Power - Max: 1W
• Frequency - Transition: 190MHz
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: TO-243AA
• Supplier Device Package: SOT-89-3

封装: TO-243AA

DDTB142JC-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 500mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 470
• Resistor - Emitter Base (R2) (Ohms): 10k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 50mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

DDTA143ECA-7

Diodes Incorporated

TRANS PREBIAS PNP 200MW SOT23-3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): 4.7k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

DDTC114YE-7-F

Diodes Incorporated

TRANS PREBIAS NPN 150MW SOT523

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 10k
• Resistor - Emitter Base (R2) (Ohms): 47k
• DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (Max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Supplier Device Package: SOT-523

封装: SOT-523

DDTC143TUA-7-F

Diodes Incorporated

TRANS PREBIAS NPN 200MW SOT323

• Transistor Type: NPN - Pre-Biased
• Current - Collector (Ic) (Max): 100mA
• Voltage - Collector Emitter Breakdown (Max): 50V
• Resistor - Base (R1) (Ohms): 4.7k
• Resistor - Emitter Base (R2) (Ohms): -
• DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
• Current - Collector Cutoff (Max): 500nA (ICBO)
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: SC-70, SOT-323

DDZ9713T-7

Diodes Incorporated

DIODE ZENER 30V 150MW SOD523

• Voltage - Zener (Nom) (Vz): 30V
• Tolerance: ±5%
• Power - Max: 150mW
• Impedance (Max) (Zzt): -
• Current - Reverse Leakage @ Vr: 50nA @ 22.8V
• Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
• Operating Temperature: -65°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: SC-79, SOD-523
• Supplier Device Package: SOD-523

封装: SC-79, SOD-523

BAS40W-06-7

Diodes Incorporated

DIODE ARRAY SCHOTTKY 40V SOT323

• Diode Configuration: 1 Pair Common Anode
• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40V
• Current - Average Rectified (Io) (per Diode): 200mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 40mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): 5ns
• Current - Reverse Leakage @ Vr: 200nA @ 30V
• Operating Temperature - Junction: -55°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Supplier Device Package: SOT-323

封装: SC-70, SOT-323

AP7346D-3330FS6-7

Diodes Incorporated

IC REG LINEAR 3V/3.3V X2-DFN1212

• Output Configuration: Positive
• Output Type: Fixed
• Number of Regulators: 2
• Voltage - Input (Max): 5.25V
• Voltage - Output (Min/Fixed): 3V, 3.3V
• Voltage - Output (Max): -
• Voltage Dropout (Max): 0.29V @ 120mA, 0.29V @ 120mA
• Current - Output: 130mA, 130mA
• Current - Quiescent (Iq): -
• Current - Supply (Max): 100µA
• PSRR: 75dB (1kHz)
• Control Features: Enable
• Protection Features: Over Current
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 6-XFDFN Exposed Pad
• Supplier Device Package: X2-DFN1212-6

封装: 6-XFDFN Exposed Pad

ZR40401F25TC

Diodes Incorporated

IC VREF SHUNT 2.5V SOT23

• Reference Type: Shunt
• Output Type: Fixed
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): -
• Current - Output: 15mA
• Tolerance: ±1%
• Temperature Coefficient: 100ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: 45µVrms
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 60µA
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23

封装: TO-236-3, SC-59, SOT-23-3

ZHT431C02L

Diodes Incorporated

IC VREF SHUNT ADJ TO92-3

• Reference Type: Shunt
• Output Type: Adjustable
• Voltage - Output (Min/Fixed): 2.5V
• Voltage - Output (Max): 20V
• Current - Output: 100mA
• Tolerance: ±2%
• Temperature Coefficient: 67ppm/°C
• Noise - 0.1Hz to 10Hz: -
• Noise - 10Hz to 10kHz: -
• Voltage - Input: -
• Current - Supply: -
• Current - Cathode: 50µA
• Operating Temperature: -55°C ~ 125°C (TA)
• Mounting Type: Through Hole
• Package / Case: TO-226-3, TO-92-3 (TO-226AA)
• Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

APX803S05-44SA-7

Diodes Incorporated

RESET GENERATOR SOT23

• Type: Simple Reset/Power-On Reset
• Number of Voltages Monitored: 1
• Output: Open Drain or Open Collector
• Reset: Active Low
• Reset Timeout: 20 ms Minimum
• Voltage - Threshold: 4.38V
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

AP22814AW5-7

Diodes Incorporated

IC LOAD SWITCH SOT25

• Switch Type: USB Switch
• Number of Outputs: 1
• Ratio - Input:Output: 1:1
• Output Configuration: High Side
• Output Type: P-Channel
• Interface: On/Off
• Voltage - Load: 2.7 V ~ 5.5 V
• Voltage - Supply (Vcc/Vdd): Not Required
• Current - Output (Max): 3A
• Rds On (Typ): 50 mOhm
• Input Type: Non-Inverting
• Features: Load Discharge, Status Flag
• Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SC-74A, SOT-753
• Supplier Device Package: SOT-25

封装: SC-74A, SOT-753

AP3033KTTR-G1

Diodes Incorporated

IC LED DRIVER RGLTR DIM

• Type: DC DC Regulator
• Topology: Step-Up (Boost)
• Internal Switch(s): Yes
• Number of Outputs: 1
• Voltage - Supply (Min): 3V
• Voltage - Supply (Max): 16V
• Voltage - Output: 38V
• Current - Output / Channel: 1.3A (Switch)
• Frequency: 1MHz
• Dimming: PWM
• Applications: Backlight
• Operating Temperature: -40°C ~ 85°C (TA)
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6 Thin, TSOT-23-6
• Supplier Device Package: TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

AP9101CAK6-AHTRG1

Diodes Incorporated

IC BATT PROT LI-ION 1-CELL SOT26

• Function: Battery Protection
• Battery Chemistry: Lithium-Ion/Polymer
• Number of Cells: 1
• Fault Protection: Over Current, Over Voltage
• Interface: -
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: SOT-23-6
• Supplier Device Package: SOT-26

封装: SOT-23-6

PI5A392AQEX

Diodes Incorporated

IC SWITCH QUAD SPST 16QSOP

• Switch Circuit: SPST - NO
• Multiplexer/Demultiplexer Circuit: 1:1
• Number of Circuits: 4
• On-State Resistance (Max): 18 Ohm
• Channel-to-Channel Matching (ΔRon): 400 mOhm
• Voltage - Supply, Single (V+): 2 V ~ 6 V
• Voltage - Supply, Dual (V±): -
• Switch Time (Ton, Toff) (Max): 20ns, 10ns
• -3db Bandwidth: 200MHz
• Charge Injection: 5pC
• Channel Capacitance (CS(off), CD(off)): 13pF
• Current - Leakage (IS(off)) (Max): 30nA
• Crosstalk: -72dB @ 30MHz
• Operating Temperature: -40°C ~ 85°C (TA)
• Package / Case: 16-SSOP (0.154", 3.90mm Width)
• Supplier Device Package: 16-QSOP

封装: 16-SSOP (0.154", 3.90mm Width)

PI6C20400BLE

Diodes Incorporated

IC CLOCK BUFFER 1:4 28TSSOP

• PLL: Yes
• Main Purpose: PCI Express (PCIe)
• Input: HCSL
• Output: HCSL
• Number of Circuits: 1
• Ratio - Input:Output: 1:4
• Differential - Input:Output: Yes/Yes
• Frequency - Max: 400MHz
• Voltage - Supply: 3.135 V ~ 3.465 V
• Operating Temperature: -40°C ~ 85°C
• Mounting Type: Surface Mount
• Package / Case: 28-TSSOP (0.173", 4.40mm Width)
• Supplier Device Package: 28-TSSOP

封装: 28-TSSOP (0.173", 4.40mm Width)

1.5KE30A-B

Diodes Incorporated

TVS DIODE 25.6VWM 41.4VC DO201

• Type: Zener
• Unidirectional Channels: 1
• Bidirectional Channels: -
• Voltage - Reverse Standoff (Typ): 25.6V
• Voltage - Breakdown (Min): 28.5V
• Voltage - Clamping (Max) @ Ipp: 41.4V
• Current - Peak Pulse (10/1000µs): 36A
• Power - Peak Pulse: 1500W (1.5kW)
• Power Line Protection: No
• Applications: General Purpose
• Capacitance @ Frequency: -
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Package / Case: DO-201AA, DO-27, Axial
• Supplier Device Package: DO-201

封装: DO-201AA, DO-27, Axial

PI3USB32212ZLEX

Diodes Incorporated

USB3 SWITCH W-QFN3060-32 T&R 3.5

• Applications: USB
• Multiplexer/Demultiplexer Circuit: 1:2
• Switch Circuit: -
• Number of Channels: 2
• On-State Resistance (Max): 13 Ohm
• Voltage - Supply, Single (V+): 2.97 V ~ 3.63 V
• Voltage - Supply, Dual (V±): -
• -3db Bandwidth: 10.6GHz
• Features: USB 2.0, USB 3.0
• Operating Temperature: -
• Package / Case: 32-WFQFN Exposed Pad
• Supplier Device Package: 32-TQFN (3x6)

封装: 32-WFQFN Exposed Pad

DGD2005S8-13

Diodes Incorporated

IC GATE DRVR HALF-BRIDG 8SO 2.5K

• Driven Configuration: Half-Bridge
• Channel Type: Independent
• Number of Drivers: 2
• Gate Type: N-Channel MOSFET
• Voltage - Supply: 10V ~ 20V
• Logic Voltage - VIL, VIH: 0.6V, 2.5V
• Current - Peak Output (Source, Sink): 290mA, 600mA
• Input Type: Non-Inverting
• High Side Voltage - Max (Bootstrap): 200V
• Rise / Fall Time (Typ): 100ns, 35ns
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

PI3DPX1225ZLBEX

Diodes Incorporated

ACTIVE DISPLAY W-QFN6040-40 T&R

• Type: Buffer, ReDriver
• Applications: USB Type C
• Input: DisplayPort
• Output: DisplayPort
• Data Rate (Max): 13.5Gbps
• Number of Channels: 1 x 6:4
• Delay Time: -
• Signal Conditioning: Input Equalization
• Capacitance - Input: -
• Voltage - Supply: 3.3V
• Current - Supply: -
• Operating Temperature: -
• Mounting Type: Surface Mount
• Package / Case: 40-WFQFN Exposed Pad
• Supplier Device Package: 40-TQFN (4x6)

封装: -

Request a Quote

SD1A200A

Diodes Incorporated

THYRISTOR SMA T&R 5K

• Voltage - Off State: -
• Voltage - Gate Trigger (Vgt) (Max): -
• Current - Gate Trigger (Igt) (Max): -
• Voltage - On State (Vtm) (Max): -
• Current - On State (It (AV)) (Max): -
• Current - On State (It (RMS)) (Max): -
• Current - Hold (Ih) (Max): -
• Current - Off State (Max): -
• Current - Non Rep. Surge 50, 60Hz (Itsm): -
• SCR Type: -
• Operating Temperature: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -

封装: -

ZXCT213QCDW-7

Diodes Incorporated

CM VOLTAGE OUTPUT SOT363 T&R 3K

• Function: Current Monitor
• Sensing Method: High/Low-Side
• Accuracy: ±0.5%
• Voltage - Input: 2.7V ~ 26V
• Current - Output: -
• Operating Temperature: -40°C ~ 125°C (TA)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: -

DMT12H060LFDF-13

Diodes Incorporated

MOSFET BVDSS: 101V~250V U-DFN202

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 115 V
• Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 475 pF @ 50 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.1W (Ta)
• Rds On (Max) @ Id, Vgs: 65mOhm @ 3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

封装: -

Request a Quote

DMN31D5UDW-7

Diodes Incorporated

MOSFET BVDSS: 25V~30V SOT363 T&R

• FET Type: MOSFET (Metal Oxide)
• FET Feature: -
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 430mA (Ta)
• Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
• Vgs(th) (Max) @ Id: 0.9V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.3nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 15.4pF @ 15V
• Power - Max: 330mW (Ta)
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Supplier Device Package: SOT-363

封装: -

Request a Quote

RS1MSWFM-7

Diodes Incorporated

DIODE GEN PURP 1KV 1A SOD123F

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1000 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 500 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
• Capacitance @ Vr, F: 4.7pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123F
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -