页 52 - 二极管 - 桥式整流器 | 分立半导体产品 | 黑森尔电子
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二极管 - 桥式整流器

记录 7,565
页  52/271
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Voltage - Peak Reverse (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Current - Reverse Leakage @ Vr
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2KBP10ML-5/22
Vishay Semiconductor Diodes Division

BRIDGE RECT 1PHASE 1KV 2A KBPM

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3.14A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 165°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, KBPM
  • Supplier Device Package: KBPM
封装: 4-SIP, KBPM
库存7,536
Standard
1000V
2A
1.1V @ 3.14A
5µA @ 1000V
-55°C ~ 165°C (TJ)
Through Hole
4-SIP, KBPM
KBPM
MSD100-18
Microsemi Corporation

DIODE BRIDGE 1800V 100A M3

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1800V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
  • Current - Reverse Leakage @ Vr: 300µA @ 1800V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M3
  • Supplier Device Package: -
封装: M3
库存4,416
Standard
1800V
100A
1.9V @ 300A
300µA @ 1800V
-40°C ~ 150°C (TJ)
Chassis Mount
M3
-
VSIB10A40-E3/45
Vishay Semiconductor Diodes Division

DIODE 10A 400V SGL BRIDGE 4SIP

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 5A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GSIB-5S
  • Supplier Device Package: GSIB-5S
封装: 4-SIP, GSIB-5S
库存2,784
Standard
400V
10A
1V @ 5A
10µA @ 400V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GSIB-5S
GSIB-5S
hot RS405L
Micro Commercial Co

RECTIFIER BRIDGE 4A 600V RS-4L

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, RS-4L
  • Supplier Device Package: RS-4L
封装: 4-SIP, RS-4L
库存34,800
Standard
600V
4A
1V @ 3A
10µA @ 600V
-55°C ~ 125°C (TJ)
Through Hole
4-SIP, RS-4L
RS-4L
T483A
Crydom Co.

MODULE POWER

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存3,424
Standard
200V
10A
-
25µA @ 100V
-
Surface Mount
Module
Module
BR50504W-G
Comchip Technology

BRIDGE DIODE 50A 400V BR-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, BR-W
  • Supplier Device Package: BR-W
封装: 4-Square, BR-W
库存3,088
Standard
400V
50A
1.1V @ 25A
10µA @ 400V
-
Through Hole
4-Square, BR-W
BR-W
TS50P05GHD2G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 50A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, TS-6P
  • Supplier Device Package: TS-6P
封装: 4-SIP, TS-6P
库存2,032
Standard
600V
50A
1.1V @ 25A
10µA @ 600V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, TS-6P
TS-6P
GBPC3508WTA
SMC Diode Solutions

BRIDGE RECT 1PH 800V 35A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 35A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 17.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封装: 4-Square, GBPC-W
库存7,888
Standard
800V
35A
1.1V @ 17.5A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBPC1502W
GeneSiC Semiconductor

DIODE BRIDGE 200V 15A GBPC-W

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 7.5A
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, GBPC-W
  • Supplier Device Package: GBPC-W
封装: 4-Square, GBPC-W
库存5,216
Standard
200V
15A
1.1V @ 7.5A
5µA @ 200V
-55°C ~ 150°C (TJ)
Through Hole
4-Square, GBPC-W
GBPC-W
GBU8K-M3/51
Vishay Semiconductor Diodes Division

BRIDGE RECT GPP 8A 800V GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 8A
  • Current - Reverse Leakage @ Vr: 5µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封装: 4-SIP, GBU
库存7,456
Standard
800V
8A
1V @ 8A
5µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBL10-M3/45
Vishay Semiconductor Diodes Division

BRIDGE RECT 4A GPP 1000V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封装: 4-SIP, GBL
库存5,808
Standard
1000V
4A
1.1V @ 4A
5µA @ 1000V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
hot GBL08-E3/51
Vishay Semiconductor Diodes Division

DIODE GPP 1PH 4A 800V GBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBL
  • Supplier Device Package: GBL
封装: 4-SIP, GBL
库存215,520
Standard
800V
3A
1V @ 2A
10µA @ 800V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBL
GBL
RDBLS207G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, FAST, 2A, 1000

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1000V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 2A
  • Current - Reverse Leakage @ Vr: 2µA @ 1000V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Gull Wing
  • Supplier Device Package: DBLS
封装: 4-SMD, Gull Wing
库存3,456
Standard
1000V
2A
1.15V @ 2A
2µA @ 1000V
-55°C ~ 150°C (TJ)
Surface Mount
4-SMD, Gull Wing
DBLS
DBL102G C1G
Taiwan Semiconductor Corporation

BRIDGE RECTIFIER, STANDARD, 1A,

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Current - Reverse Leakage @ Vr: 2µA @ 100V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
封装: 4-DIP (0.300", 7.62mm)
库存3,104
Standard
100V
1A
1.1V @ 1A
2µA @ 100V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
VS-KBPC602
Vishay Semiconductor Diodes Division

BRIDGE RECTIFIER 200V 6.0A D-72

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 200V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square, D-72
  • Supplier Device Package: D-72
封装: 4-Square, D-72
库存4,752
Standard
200V
6A
1.2V @ 3A
-
-40°C ~ 150°C (TJ)
Through Hole
4-Square, D-72
D-72
GBPC5004-BP
Micro Commercial Co

RECT BRIDGE 400V 50A GBPC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400V
  • Current - Average Rectified (Io): 50A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 25A
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: QC Terminal
  • Package / Case: 4-Square, GBPC
  • Supplier Device Package: GBPC
封装: 4-Square, GBPC
库存8,088
Standard
400V
50A
1.1V @ 25A
5µA @ 400V
-55°C ~ 150°C (TJ)
QC Terminal
4-Square, GBPC
GBPC
NTE5332
NTE Electronics, Inc

R-SI BRIDGE 600V 1A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 1 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: -
封装: -
Request a Quote
Standard
600 V
1 A
1.2 V @ 1 A
10 µA @ 600 V
-65°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
-
MSCDC50X1201AG
Microchip Technology

PM-DIODE-SIC-SBD-SP1F

  • Diode Type: Three Phase
  • Technology: Silicon Carbide Schottky
  • Voltage - Peak Reverse (Max): 1.2 kV
  • Current - Average Rectified (Io): 50 A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 50 A
  • Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
库存18
Silicon Carbide Schottky
1.2 kV
50 A
1.8 V @ 50 A
200 µA @ 1200 V
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
NTE5327W
NTE Electronics, Inc

R-SI BRIDGE 800V 25A

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 25 A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 12.5 A
  • Current - Reverse Leakage @ Vr: 10 µA @ 800 V
  • Operating Temperature: -55°C ~ 125°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-Square
  • Supplier Device Package: -
封装: -
Request a Quote
Standard
800 V
25 A
1.2 V @ 12.5 A
10 µA @ 800 V
-55°C ~ 125°C (TJ)
Through Hole
4-Square
-
GBU4KL-6437E3-51
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 800V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 800 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封装: -
Request a Quote
Standard
800 V
3 A
1 V @ 4 A
5 µA @ 800 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
RS801
JATTA

BRIDGE RECT 1P 600V 8.0A RS-8

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
GBI20A
Diotec Semiconductor

IC

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 50 V
  • Current - Average Rectified (Io): 3.6 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Operating Temperature: -50°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBI
  • Supplier Device Package: GBI
封装: -
Request a Quote
Standard
50 V
3.6 A
1.1 V @ 10 A
5 µA @ 50 V
-50°C ~ 150°C (TJ)
Through Hole
4-SIP, GBI
GBI
GBU4JL-5303E3-45
Vishay General Semiconductor - Diodes Division

BRIDGE RECT 1PHASE 600V 3A GBU

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 3 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBU
  • Supplier Device Package: GBU
封装: -
Request a Quote
Standard
600 V
3 A
1 V @ 4 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBU
GBU
GBJL15J
SMC Diode Solutions

600V, 15A, GBJL, BRIDGE RECTIFIE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 600 V
  • Current - Average Rectified (Io): 15 A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 7.5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-SIP, GBJL
  • Supplier Device Package: GBJL
封装: -
库存4,302
Standard
600 V
15 A
1 V @ 7.5 A
5 µA @ 600 V
-55°C ~ 150°C (TJ)
Through Hole
4-SIP, GBJL
GBJL
MT330CB16T3-BP
Micro Commercial Co

DISCRETE SEMICONDUCTOR MODULES T

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
DBL202GH
Taiwan Semiconductor Corporation

DIODE BRIDGE 2A 100V DBL

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 100 V
  • Current - Average Rectified (Io): 2 A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Current - Reverse Leakage @ Vr: 2 µA @ 100 V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: 4-DIP (0.300", 7.62mm)
  • Supplier Device Package: DBL
封装: -
Request a Quote
Standard
100 V
2 A
1.15 V @ 2 A
2 µA @ 100 V
-55°C ~ 150°C (TJ)
Through Hole
4-DIP (0.300", 7.62mm)
DBL
GBPC1004W
Surge

10A -400V - GBPC-W - BRIDGE

  • Diode Type: Single Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 400 V
  • Current - Average Rectified (Io): 10 A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
Standard
400 V
10 A
1.1 V @ 5 A
5 µA @ 400 V
-65°C ~ 150°C (TJ)
-
-
-
SM520C
JATTA

BRIDGE RECT 1P 600V 5.0A DO-214A

  • Diode Type: -
  • Technology: -
  • Voltage - Peak Reverse (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Current - Reverse Leakage @ Vr: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-