页 1088 - 二极管 - 整流器 - 单 | 分立半导体产品 | 黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SK38B/TR13
Microsemi Corporation

DIODE SCHOTTKY 80V 3A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 80V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-214AA, SMB
库存6,272
80V
3A
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 80V
-
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-55°C ~ 125°C
FGP10D-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 2µA @ 200V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-204AL, DO-41, Axial
库存4,176
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
2µA @ 200V
25pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot RD0506LS-SB5
ON Semiconductor

DIODE GEN PURP 5A TO220FI

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220FI(LS)-SB
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-220-2 Full Pack
库存16,704
-
5A
1.6V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
50µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220FI(LS)-SB
150°C (Max)
D921S45T
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 4500V 890A 2560A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存3,440
-
-
-
-
-
-
-
-
-
-
-
VS-VSKE250-20PBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 2KV 250A MAGNAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2000V
  • Current - Average Rectified (Io): 250A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50mA @ 2000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: MAGN-A-PAK (3)
  • Supplier Device Package: MAGN-A-PAK?
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: MAGN-A-PAK (3)
库存5,760
2000V
250A
-
Standard Recovery >500ns, > 200mA (Io)
-
50mA @ 2000V
-
Chassis Mount
MAGN-A-PAK (3)
MAGN-A-PAK?
-40°C ~ 150°C
D820N28T
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 2000V 1273A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存2,272
-
-
-
-
-
-
-
-
-
-
-
R6221455ESOO
Powerex Inc.

DIODE MODULE 1.4KV 550A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400V
  • Current - Average Rectified (Io): 550A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 800A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 50mA @ 1400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
封装: DO-200AA, A-PUK
库存5,264
1400V
550A
1.5V @ 800A
Standard Recovery >500ns, > 200mA (Io)
2µs
50mA @ 1400V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
FR6D05
GeneSiC Semiconductor

DIODE GEN PURP 200V 16A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 500ns
  • Current - Reverse Leakage @ Vr: 25µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-203AA, DO-4, Stud
库存5,232
200V
16A
1.4V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
500ns
25µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
FR16BR02
GeneSiC Semiconductor

DIODE GEN PURP REV 100V 16A DO4

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 25µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-203AA, DO-4, Stud
库存5,440
100V
16A
900mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
25µA @ 100V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 150°C
GDP12S060D
Global Power Technologies Group

DIODE SCHOTTKY 600V 12A TO263-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 100µA @ 600V
  • Capacitance @ Vr, F: 487pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263-2
  • Operating Temperature - Junction: -55°C ~ 135°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,840
600V
12A (DC)
1.7V @ 12A
No Recovery Time > 500mA (Io)
0ns
100µA @ 600V
487pF @ 1V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263-2
-55°C ~ 135°C
VS-20ETF10S-M3
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A TO263AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 100µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,304
1000V
20A
1.31V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
100µA @ 1000V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-40°C ~ 150°C
HERAF1601G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 16A, 50V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2 Full Pack
库存6,960
50V
16A
1V @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 50V
150pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
UGF5HT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 5A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 30µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2 Full Pack, Isolated Tab
库存7,456
500V
5A
1.75V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 500V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-55°C ~ 150°C
VSB3200-E3/73
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 200V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: 175pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: DO-201AD, Axial
库存2,976
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
-
175pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-40°C ~ 150°C
NRVB120VLSFT1G
ON Semiconductor

DIODE SCHOTTKY 20V 1A SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 300mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: SOD-123F
库存2,064
20V
1A
300mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
15mA @ 20V
-
Surface Mount
SOD-123F
SOD-123FL
-65°C ~ 125°C
UG1D-M3/73
Vishay Semiconductor Diodes Division

DIODE 1A 200V 15NS DO-204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存3,664
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
7pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S10KC R7G
TSC America Inc.

DIODE, 10A, 800V, DO-214AB (SMC)

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 800V
  • Capacitance @ Vr, F: 60pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AB, SMC
库存2,320
800V
10A
1.1V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
TSS42U RGG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 0.2A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0201 (0603 Metric)
  • Supplier Device Package: 0603
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: 0201 (0603 Metric)
库存5,824
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
-
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
0201 (0603 Metric)
0603
-55°C ~ 125°C
hot STPS2H100A
STMicroelectronics

DIODE SCHOTTKY 100V 2A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-214AC, SMA
库存2,987,040
100V
2A
790mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
1µA @ 100V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
175°C (Max)
SCS212AMC
Rohm Semiconductor

DIODE SCHOTTKY 650V 12A TO220FM

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 12A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 240µA @ 600V
  • Capacitance @ Vr, F: 438pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220FM
  • Operating Temperature - Junction: 175°C (Max)
封装: TO-220-2
库存13,728
650V
12A
1.55V @ 12A
No Recovery Time > 500mA (Io)
0ns
240µA @ 600V
438pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220FM
175°C (Max)
hot RS3D-E3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 44pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AB, SMC
库存371,400
200V
3A
1.3V @ 2.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 200V
44pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SDT3A40SAFS-13
Diodes Incorporated

DIODE SCHOTTKY 40V 3A SMA-FS

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA Flat Leads
  • Supplier Device Package: SMA-FS
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
40 V
3A
450 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 40 V
-
Surface Mount
DO-214AC, SMA Flat Leads
SMA-FS
-65°C ~ 150°C
TPUH6D
Taiwan Semiconductor Corporation

25NS, 6A, 200V, ULTRA FAST RECOV

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
200 V
6A
1.05 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
10 µA @ 200 V
50pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
RL201-AP
Micro Commercial Co

DIODE GEN PURP 50V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
50 V
2A
1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 50 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
MBR0530L2-TP
Micro Commercial Co

SCHOTTKY DIODES

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 30 V
  • Capacitance @ Vr, F: 32pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 0402 (1006 Metric)
  • Supplier Device Package: 2-DFN1006
  • Operating Temperature - Junction: -55°C ~ 100°C
封装: -
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30 V
500mA
540 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 30 V
32pF @ 0V, 1MHz
Surface Mount
0402 (1006 Metric)
2-DFN1006
-55°C ~ 100°C
TCF20B60
KYOCERA AVX

DIODE GEN PURP 600V 20A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 30 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
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600 V
20A
1.8 V @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
30 µA @ 600 V
-
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
-40°C ~ 150°C
SDT5A100SAF-13
Diodes Incorporated

DIODE SCHOTTKY 100V 5A SMAF

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 660 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMAF
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存24,480
100 V
5A
660 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 100 V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMAF
-55°C ~ 150°C
JANS1N5621-TR
Microchip Technology

DIODE GEN PURP 800V 1A A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300 ns
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: A, Axial
  • Supplier Device Package: A, Axial
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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800 V
1A
1.6 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
300 ns
-
-
Through Hole
A, Axial
A, Axial
-65°C ~ 200°C