页 113 - 二极管 - 整流器 - 单 | 分立半导体产品 | 黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
页  113/1,760
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot ES1DHE3/61T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AC, SMA
库存86,400
200V
1A
920mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
MBRF750-E3/45
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 7.5A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 7.5A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-220-2 Full Pack, Isolated Tab
库存7,456
50V
7.5A
750mV @ 7.5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
TO-220-2 Full Pack, Isolated Tab
ITO-220AC
-65°C ~ 150°C
hot DSEP60-03A
IXYS

DIODE GEN PURP 300V 60A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.71V @ 60A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 650µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247 (HA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-247-2
库存103,464
300V
60A
1.71V @ 60A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
650µA @ 300V
-
Through Hole
TO-247-2
TO-247 (HA)
-55°C ~ 175°C
IRKE236/12
Vishay Semiconductor Diodes Division

DIODE MODULE 1.2KV 230A INTAPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 230A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 20mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: INT-A-PAK (2)
  • Supplier Device Package: Module
  • Operating Temperature - Junction: -
封装: INT-A-PAK (2)
库存2,992
1200V
230A
-
Standard Recovery >500ns, > 200mA (Io)
-
20mA @ 1200V
-
Chassis Mount
INT-A-PAK (2)
Module
-
1N1204A
GeneSiC Semiconductor

DIODE GEN PURP 400V 12A DO4

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: DO-203AA, DO-4, Stud
库存7,040
400V
12A
1.1V @ 12A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-4
-65°C ~ 200°C
STPSC6C065DY
STMicroelectronics

DIODE SCHOTTKY 650V TO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 6A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60µA @ 650V
  • Capacitance @ Vr, F: 270pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: TO-220-2
库存6,160
650V
6A
1.75V @ 6A
Fast Recovery =< 500ns, > 200mA (Io)
-
60µA @ 650V
270pF @ 0V, 1MHz
Through Hole
TO-220-2
TO-220AC
-40°C ~ 175°C
12TQ200STR
SMC Diode Solutions

DIODE SCHOTTKY 200V 15A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 920mV @ 15A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 200V
  • Capacitance @ Vr, F: 300pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,296
200V
15A
920mV @ 15A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 200V
300pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 175°C
SJPD-L5V
Sanken

DIODE GEN PURP 500V 3A SJP

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 500V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 15µA @ 500V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 2-SMD, J-Lead
  • Supplier Device Package: SJP
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: 2-SMD, J-Lead
库存4,912
500V
3A
1.4V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
15µA @ 500V
-
Surface Mount
2-SMD, J-Lead
SJP
-40°C ~ 150°C
SDT5H100P5-13
Diodes Incorporated

SCHOTTKY RECTIFIER PDI5

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 620mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI? 5
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: PowerDI? 5
库存2,560
100V
5A
620mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
PowerDI? 5
PowerDI? 5
-55°C ~ 150°C
BYM07-200HE3/98
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 500MA DO213

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA (Glass)
  • Supplier Device Package: DO-213AA (GL34)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-213AA (Glass)
库存5,824
200V
500mA
1.25V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
7pF @ 4V, 1MHz
Surface Mount
DO-213AA (Glass)
DO-213AA (GL34)
-65°C ~ 175°C
hot XBS104S14R-G
Torex Semiconductor Ltd

DIODE SCHOTTKY 40V 1A SOD123A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 540mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 200µA @ 40V
  • Capacitance @ Vr, F: 35pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123A
  • Operating Temperature - Junction: 125°C (Max)
封装: SOD-123
库存1,469,508
40V
1A
540mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
200µA @ 40V
35pF @ 10V, 1MHz
Surface Mount
SOD-123
SOD-123A
125°C (Max)
6A4TA
SMC Diode Solutions

DIODE GEN PURP 400V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 6A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 150pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: R6, Axial
库存3,664
400V
6A
950mV @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 400V
150pF @ 4V, 1MHz
Through Hole
R6, Axial
R-6
-65°C ~ 175°C
HS1JL MHG
TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-219AB
库存7,808
600V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
15pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
hot 1N5399-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1.5A DO204

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1000V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存522,000
1000V
1.5A
1.4V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
2µs
5µA @ 1000V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-50°C ~ 150°C
UG2JA R3G
TSC America Inc.

DIODE, SUPER FAST, 2A, 600V, 40N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 55ns
  • Current - Reverse Leakage @ Vr: 2µA @ 600V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AC, SMA
库存5,536
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
2µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
UF5407-E3/54
Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 36pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-201AD, Axial
库存7,568
800V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 800V
36pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SE20PAJ-M3/I
Vishay Semiconductor Diodes Division

DIODE RECT 600V 1.6A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1.6A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 2A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.2µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 13pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-220AA
库存6,096
600V
1.6A
1.05V @ 2A
Standard Recovery >500ns, > 200mA (Io)
1.2µs
5µA @ 600V
13pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 175°C
NXPLQSC10650Q
WeEn Semiconductors

DIODE SCHOTTKY 650V 10A TO220-2

  • Diode Type: Silicon Carbide Schottky
  • Voltage - DC Reverse (Vr) (Max): 650V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.85V @ 10A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0ns
  • Current - Reverse Leakage @ Vr: 230µA @ 650V
  • Capacitance @ Vr, F: 250pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 175°C (Max)
封装: TO-220-2
库存46,644
650V
10A
1.85V @ 10A
No Recovery Time > 500mA (Io)
0ns
230µA @ 650V
250pF @ 1V, 1MHz
Through Hole
TO-220-2
TO-220AC
175°C (Max)
VS-EPH3006-F3
Vishay Semiconductor Diodes Division

DIODE HYPERFAST 30A TO-247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.65V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 26ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-247-2
库存17,064
600V
30A
2.65V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
26ns
30µA @ 600V
-
Through Hole
TO-247-2
TO-247AC Modified
-65°C ~ 175°C
FERD30H100SH
STMicroelectronics

DIODE GEN PURP 100V 30A IPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
  • Supplier Device Package: IPAK (TO-251)
  • Operating Temperature - Junction: 175°C (Max)
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存24,156
100V
30A
-
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
IPAK (TO-251)
175°C (Max)
FR1D
SMC Diode Solutions

DIODE GEN PURP 200V 1A SMB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB (DO-214AA)
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
Request a Quote
200 V
1A
1.3 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 200 V
10pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB (DO-214AA)
-50°C ~ 150°C
1N3595UR-1-TR
Microchip Technology

DIODE GP 125V 150MA DO213AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 1 nA @ 125 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AA
  • Supplier Device Package: DO-213AA
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
125 V
150mA
1 V @ 200 mA
Small Signal =< 200mA (Io), Any Speed
3 µs
1 nA @ 125 V
-
Surface Mount
DO-213AA
DO-213AA
-65°C ~ 175°C
MUR140-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
Request a Quote
400 V
1A
1.35 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
5 µA @ 400 V
20pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-50°C ~ 150°C
STPST3H100UF
STMicroelectronics

100 V, 3 A POWER SCHOTTKY TRENCH

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 755 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5.7 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMB, Flat Lead
  • Supplier Device Package: SMBflat-3L
  • Operating Temperature - Junction: 175°C
封装: -
库存28,251
100 V
3A
755 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
5.7 µA @ 100 V
-
Surface Mount
3-SMB, Flat Lead
SMBflat-3L
175°C
HER153-AP
Micro Commercial Co

DIODE GEN PURP 200V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
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200 V
1.5A
1 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
50pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 125°C
MUR440GP-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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400 V
4A
1.28 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
60 ns
10 µA @ 400 V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
JANTXV1N6638-TR
Microchip Technology

DIODE GEN PURP 125V 300MA D-5D

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125 V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 125 V
  • Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: D, Axial
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
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125 V
300mA
1.1 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
20 ns
500 nA @ 125 V
2.5pF @ 0V, 1MHz
Through Hole
D, Axial
D-5D
-65°C ~ 175°C
1N1196A
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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400 V
40A
1.19 V @ 90 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 400 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 200°C
S43140
Microchip Technology

DIODE GP 1.4KV 150A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1400 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 1400 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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1400 V
150A
1.1 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
50 µA @ 1400 V
-
Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-65°C ~ 200°C
JANTXV1N6911UTK2-TR
Microchip Technology

DIODE SCHOTTKY 30V 25A THINKEY2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 25A
  • Voltage - Forward (Vf) (Max) @ If: 540 mV @ 25 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.2 mA @ 30 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: ThinKey™2
  • Supplier Device Package: ThinKey™2
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
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30 V
25A
540 mV @ 25 A
No Recovery Time > 500mA (Io)
-
1.2 mA @ 30 V
-
Surface Mount
ThinKey™2
ThinKey™2
-65°C ~ 150°C