页 1147 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
BAS 3005A-02V E6327	Infineon Technologies	DIODE SCHOTTKY 30V 500MA SC79-2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 30V Capacitance @ Vr, F: 15pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: PG-SC79-2 Operating Temperature - Junction: -55°C ~ 125°C	封装: SC-79, SOD-523	库存7,264	30V	500mA (DC)	500mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 30V	15pF @ 5V, 1MHz	Surface Mount	SC-79, SOD-523	PG-SC79-2	-55°C ~ 125°C
DSB2I60SB	IXYS	DIODE SCHOTTKY 60V 2A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存3,328	60V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	-	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 150°C
SMB5819	Micro Commercial Co	DIODE SCHOTTKY 40V 1A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMBJ) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存3,664	40V	1A	600mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMBJ)	-55°C ~ 125°C
JAN1N3671R	Microsemi Corporation	DIODE GEN PURP 800V 12A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存7,536	800V	12A	1.35V @ 38A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 150°C
1N3166R	Powerex Inc.	DIODE STUD MNT 240A 300V DO-9 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,776	-	-	-	-	-	-	-	-	-	-	-
183NQ080-1	SMC Diode Solutions	DIODE SCHOTTKY 80V 180A PRM1-1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 180A Voltage - Forward (Vf) (Max) @ If: 950mV @ 180A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5mA @ 80V Capacitance @ Vr, F: 4150pF @ 5V, 1MHz Mounting Type: Chassis Mount Package / Case: HALF-PAK Supplier Device Package: PRM1-1 (Half Pak Module) Operating Temperature - Junction: -55°C ~ 175°C	封装: HALF-PAK	库存6,416	80V	180A	950mV @ 180A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5mA @ 80V	4150pF @ 5V, 1MHz	Chassis Mount	HALF-PAK	PRM1-1 (Half Pak Module)	-55°C ~ 175°C
MBRH120150	GeneSiC Semiconductor	DIODE MODULE 150V 120A D-67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 120A Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存3,328	150V	120A	880mV @ 120A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 150V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
VS-20ETS16-M3	Vishay Semiconductor Diodes Division	DIODE INPUT RECT 20A TO-220AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 1600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220AB Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-3	库存4,688	1600V	20A	1.1V @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	100µA @ 1600V	-	Through Hole	TO-220-3	TO-220AB	-40°C ~ 150°C
S12GR	GeneSiC Semiconductor	DIODE GEN PURP REV 400V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-203AA, DO-4, Stud	库存5,776	400V	12A	1.1V @ 12A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 175°C
VI30100S-M3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 30A 100V TO-262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存3,040	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
SRA820HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	封装: TO-220-2	库存4,784	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
AS3PJHM3_A/I	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 600V 2.1A TO277A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2µs Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: 37pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存7,392	600V	2.1A	1.1V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	1.2µs	10µA @ 600V	37pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
UPS5817E3/TR13	Microsemi Corporation	DIODE SCHOTTKY 20V 1A POWERMITE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 105pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-216AA Supplier Device Package: Powermite Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-216AA	库存7,424	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	105pF @ 5V, 1MHz	Surface Mount	DO-216AA	Powermite	-55°C ~ 150°C
1N4934GP-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存7,424	100V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 100V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
GP10J-4005-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	封装: DO-204AL, DO-41, Axial	库存4,912	600V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
S1DL RUG	TSC America Inc.	DIODE, 1A, 200V, SUB SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.8µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-219AB	库存7,472	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.8µs	5µA @ 200V	9pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 175°C
1N5402	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存77,916	200V	3A	1.2V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	30pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
1N5396GP-AP	Micro Commercial Co	DIODE GEN PURP 500V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	500 V	1.5A	1.4 V @ 1.5 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 500 V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
SD175SB45A-T1	SMC Diode Solutions	DIODE SCHOTTKY 45V 30A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 800 µA @ 45 V Capacitance @ Vr, F: 1600pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	45 V	30A	640 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	800 µA @ 45 V	1600pF @ 5V, 1MHz	Surface Mount	Die	Die	-55°C ~ 175°C
BYM12-50HE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 50V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 50 V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
ESH1BHE3_A-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 100V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 100 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	1A	900 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 100 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
R34120	Microchip Technology	RECTIFIER Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 45A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1200 V	45A	1.15 V @ 90 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 200°C
1N1205B	Microchip Technology	STANDARD RECTIFIER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 500 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	500 V	12A	1.2 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 500 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
HVC142A-NKRF-E	Renesas Electronics Corporation	DIODE FOR ANTENNA SWITCHING Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
CLL459A-TR	Central Semiconductor Corp	DIODE GEN PURP 200V 200MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 nA @ 200 V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	200 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	25 nA @ 200 V	6pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80	-65°C ~ 200°C
XNRVBAF1540T3G	onsemi	DIODE SCHOTTKY 40V 1.5A SMA-FL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMA-FL Operating Temperature - Junction: 150°C	封装: -	Request a Quote	40 V	1.5A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 40 V	-	Surface Mount	DO-221AC, SMA Flat Leads	SMA-FL	150°C
RB168VWM-40TR	Rohm Semiconductor	DIODE SCHOTTKY 40V 1A PMDE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: PMDE Operating Temperature - Junction: 175°C	封装: -	库存6,096	40 V	1A	690 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 nA @ 40 V	-	Surface Mount	2-SMD, Flat Lead	PMDE	175°C
RB510VM-40TE-17	Rohm Semiconductor	DIODE SCHOTTKY 40V 100MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C	封装: -	库存8,316	40 V	100mA	480 mV @ 10 mA	Small Signal =< 200mA (Io), Any Speed	-	2 µA @ 40 V	-	Surface Mount	SC-90, SOD-323F	UMD2	150°C

BAS 3005A-02V E6327

Infineon Technologies

DIODE SCHOTTKY 30V 500MA SC79-2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 500mA (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 30V
Capacitance @ Vr, F: 15pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: PG-SC79-2
Operating Temperature - Junction: -55°C ~ 125°C

封装: SC-79, SOD-523

库存7,264

30V

500mA (DC)

500mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 30V

15pF @ 5V, 1MHz

Surface Mount

SC-79, SOD-523

PG-SC79-2

-55°C ~ 125°C

DSB2I60SB

IXYS

DIODE SCHOTTKY 60V 2A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存3,328

60V

2A

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

-

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 150°C

SMB5819

Micro Commercial Co

DIODE SCHOTTKY 40V 1A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMBJ)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存3,664

40V

1A

600mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMBJ)

-55°C ~ 125°C

JAN1N3671R

Microsemi Corporation

DIODE GEN PURP 800V 12A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存7,536

800V

12A

1.35V @ 38A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 150°C

1N3166R

Powerex Inc.

DIODE STUD MNT 240A 300V DO-9

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,776

-

183NQ080-1

SMC Diode Solutions

DIODE SCHOTTKY 80V 180A PRM1-1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 180A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 180A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5mA @ 80V
Capacitance @ Vr, F: 4150pF @ 5V, 1MHz
Mounting Type: Chassis Mount
Package / Case: HALF-PAK
Supplier Device Package: PRM1-1 (Half Pak Module)
Operating Temperature - Junction: -55°C ~ 175°C

封装: HALF-PAK

库存6,416

80V

180A

950mV @ 180A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5mA @ 80V

4150pF @ 5V, 1MHz

Chassis Mount

HALF-PAK

PRM1-1 (Half Pak Module)

-55°C ~ 175°C

MBRH120150

GeneSiC Semiconductor

DIODE MODULE 150V 120A D-67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 120A
Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存3,328

150V

120A

880mV @ 120A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 150V

-

Chassis Mount

D-67

-55°C ~ 150°C

VS-20ETS16-M3

Vishay Semiconductor Diodes Division

DIODE INPUT RECT 20A TO-220AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-3

库存4,688

1600V

20A

1.1V @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

100µA @ 1600V

-

Through Hole

TO-220-3

TO-220AB

-40°C ~ 150°C

S12GR

GeneSiC Semiconductor

DIODE GEN PURP REV 400V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 12A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-203AA, DO-4, Stud

库存5,776

400V

12A

1.1V @ 12A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 175°C

VI30100S-M3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 100V TO-262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存3,040

100V

30A

910mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

SRA820HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

封装: TO-220-2

库存4,784

20V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 125°C

AS3PJHM3_A/I

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 600V 2.1A TO277A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2µs
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存7,392

600V

2.1A

1.1V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

1.2µs

10µA @ 600V

37pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

UPS5817E3/TR13

Microsemi Corporation

DIODE SCHOTTKY 20V 1A POWERMITE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 105pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-216AA
Supplier Device Package: Powermite
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-216AA

库存7,424

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

105pF @ 5V, 1MHz

Surface Mount

DO-216AA

Powermite

-55°C ~ 150°C

1N4934GP-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存7,424

100V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 100V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

GP10J-4005-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

封装: DO-204AL, DO-41, Axial

库存4,912

600V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

S1DL RUG

TSC America Inc.

DIODE, 1A, 200V, SUB SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.8µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-219AB

库存7,472

200V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.8µs

5µA @ 200V

9pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 175°C

1N5402

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存77,916

200V

3A

1.2V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 200V

30pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

1N5396GP-AP

Micro Commercial Co

DIODE GEN PURP 500V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

500 V

1.5A

1.4 V @ 1.5 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 500 V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

SD175SB45A-T1

SMC Diode Solutions

DIODE SCHOTTKY 45V 30A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 800 µA @ 45 V
Capacitance @ Vr, F: 1600pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

45 V

30A

640 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

800 µA @ 45 V

1600pF @ 5V, 1MHz

Surface Mount

Die

-55°C ~ 175°C

BYM12-50HE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 50 V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

ESH1BHE3_A-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 100V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

100 V

1A

900 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 100 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

R34120

Microchip Technology

RECTIFIER

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 45A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 90 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

1200 V

45A

1.15 V @ 90 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 200°C

1N1205B

Microchip Technology

STANDARD RECTIFIER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 500 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

500 V

12A

1.2 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 500 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

HVC142A-NKRF-E

Renesas Electronics Corporation

DIODE FOR ANTENNA SWITCHING

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

CLL459A-TR

Central Semiconductor Corp

DIODE GEN PURP 200V 200MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 nA @ 200 V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

200 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

25 nA @ 200 V

6pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80

-65°C ~ 200°C

XNRVBAF1540T3G

onsemi

DIODE SCHOTTKY 40V 1.5A SMA-FL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMA-FL
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

40 V

1.5A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 40 V

-

Surface Mount

DO-221AC, SMA Flat Leads

SMA-FL

150°C

RB168VWM-40TR

Rohm Semiconductor

DIODE SCHOTTKY 40V 1A PMDE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: PMDE
Operating Temperature - Junction: 175°C

封装: -

库存6,096

40 V

1A

690 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 nA @ 40 V

-

Surface Mount

2-SMD, Flat Lead

PMDE

175°C

RB510VM-40TE-17

Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C

封装: -

库存8,316

40 V

100mA

480 mV @ 10 mA

Small Signal =< 200mA (Io), Any Speed

-

2 µA @ 40 V

-

Surface Mount

SC-90, SOD-323F

UMD2

150°C