页 1194 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
GP08JHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 800MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,520	600V	800mA	1.3V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 600V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
QRS0620T30	Powerex Inc.	DIODE MODULE 600V 97A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 97A Voltage - Forward (Vf) (Max) @ If: 2.8V @ 200A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110ns Current - Reverse Leakage @ Vr: 1mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module Operating Temperature - Junction: -	封装: Module	库存4,672	600V	97A	2.8V @ 200A	Fast Recovery =< 500ns, > 200mA (Io)	110ns	1mA @ 600V	-	Chassis Mount	Module	Module	-
FES16BTR	Fairchild/ON Semiconductor	DIODE GEN PURP 100V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 170pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2	库存5,056	100V	16A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	170pF @ 4V, 1MHz	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
R5001610XXWA	Powerex Inc.	DIODE GEN PURP 1.6KV 100A DO205 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 1600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存7,072	1600V	100A	1.55V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 1600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
VS-5EWH06FNTRLHM3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存2,912	600V	5A	1.85V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	5µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-PAK (TO-252AA)	-65°C ~ 175°C
AS1PK-M3/85A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 800V 1.5A DO220 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A (DC) Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存4,576	800V	1.5A (DC)	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 800V	10.4pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
S3AHM6G	TSC America Inc.	DIODE, 3A, 50V, AEC-Q101, DO-214 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5µs Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存5,616	50V	3A	1.15V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	5µA @ 50V	30pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
HT14G A1G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 300V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 300V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: T-18, Axial	库存4,512	300V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
S2J-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 1µA @ 600V Capacitance @ Vr, F: 16pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存5,824	600V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	2µs	1µA @ 600V	16pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SD103AW-G3-08	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 350MA 40V SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 350mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10ns Current - Reverse Leakage @ Vr: 5µA @ 30V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123	库存4,560	40V	350mA (DC)	600mV @ 200mA	Fast Recovery =< 500ns, > 200mA (Io)	10ns	5µA @ 30V	50pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 150°C
BAV101 L0G	TSC America Inc.	DIODE, SWITCHING & ARRAY, 0.2A, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-213AC, MINI-MELF, SOD-80	库存7,824	250V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	100nA @ 200V	4pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-65°C ~ 200°C
SS320LWHRVG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD123W Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123W	库存2,016	200V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	10µA @ 200V	-	Surface Mount	SOD-123W	SOD123W	-55°C ~ 150°C
MBRD320G	ON Semiconductor	DIODE SCHOTTKY 20V 3A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 20V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK-3 Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存166,380	20V	3A	600mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 20V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK-3	-65°C ~ 150°C
STTH802BY-TR	STMicroelectronics	DIODE GEN PURP 200V 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 6µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,664	200V	8A	1.05V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	6µA @ 200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	-40°C ~ 175°C
MBRD5150TR	SMC Diode Solutions	DIODE SCHOTTKY 150V 5A DPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 150V Capacitance @ Vr, F: 150pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,792	150V	5A	900mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 150V	150pF @ 5V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	DPAK	-55°C ~ 150°C
CDBURT0530LL-HF	Comchip Technology	DIODE SCHOTTKY 20V 500MA 0603 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 460mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: 30pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 0603/SOD-523F Operating Temperature - Junction: -55°C ~ 125°C	封装: 2-SMD, No Lead	库存76,800	20V	500mA	460mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 20V	30pF @ 1V, 1MHz	Surface Mount	2-SMD, No Lead	0603/SOD-523F	-55°C ~ 125°C
BAV103-GS18	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 250MA SOD80 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 250mA (DC) Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 200V Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: SOD-80 MiniMELF Operating Temperature - Junction: 175°C (Max)	封装: DO-213AC, MINI-MELF, SOD-80	库存22,206,000	200V	250mA (DC)	1V @ 100mA	Fast Recovery =< 500ns, > 200mA (Io)	50ns	100nA @ 200V	1.5pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	SOD-80 MiniMELF	175°C (Max)
VS-STPS20L15GPBF	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 20A D2PAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10mA @ 15V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 125°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存55,308	15V	20A	410mV @ 19A	Fast Recovery =< 500ns, > 200mA (Io)	-	10mA @ 15V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 125°C
UFR7130R	Microchip Technology	DIODE GEN PURP 300V 70A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 25 µA @ 300 V Capacitance @ Vr, F: 150pF @ 10V, 1MHz Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	300 V	70A	1.25 V @ 70 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	25 µA @ 300 V	150pF @ 10V, 1MHz	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 175°C
SURS8220T3G-IR01	onsemi	DIODE GEN PURP 200V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	2 µA @ 200 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 175°C
JANTX1N4153UR-1-TR	Microchip Technology	DIODE GEN PURP 50V 150MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 µA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	150mA	550 mV @ 100 µA	Small Signal =< 200mA (Io), Any Speed	4 ns	-	2pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 175°C
TRS10E65H-S1Q	Toshiba Semiconductor and Storage	G3 SIC-SBD 650V 10A TO-220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 649pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: 175°C	封装: -	库存876	650 V	10A	1.35 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	649pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	175°C
S4D40120H	SMC Diode Solutions	DIODE SIC 1.2KV 128A TO247AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 128A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 30 µA @ 1200 V Capacitance @ Vr, F: 3227pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	128A	1.8 V @ 40 A	No Recovery Time > 500mA (Io)	0 ns	30 µA @ 1200 V	3227pF @ 0V, 1MHz	Through Hole	TO-247-2	TO-247AC	-55°C ~ 175°C
SFT17GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 500V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 500 V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	500 V	1A	1.7 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 500 V	10pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
UTR40-TR	Microchip Technology	DIODE GP 400V 500MA A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350 ns Current - Reverse Leakage @ Vr: 3 µA @ 400 V Capacitance @ Vr, F: 60pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	500mA	1.1 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	350 ns	3 µA @ 400 V	60pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
V15PM103-M3-I	Vishay	15A, 100V, SMPC TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 4.5A Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 380 µA @ 100 V Capacitance @ Vr, F: 2350pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存19,500	100 V	4.5A	690 mV @ 15 A	Fast Recovery =< 500ns, > 200mA (Io)	-	380 µA @ 100 V	2350pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
JAN1N6662US	Microchip Technology	DIODE GEN PURP 400V A SQ-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 nA @ 400 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	400 V	-	1 V @ 400 mA	Standard Recovery >500ns, > 200mA (Io)	-	50 nA @ 400 V	-	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C
UES706R	Microchip Technology	DIODE GEN PURP 400V 20A DO203AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -	封装: -	Request a Quote	400 V	20A	1.25 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-

GP08JHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 800MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,520

600V

800mA

1.3V @ 800mA

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 600V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

QRS0620T30

Powerex Inc.

DIODE MODULE 600V 97A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 97A
Voltage - Forward (Vf) (Max) @ If: 2.8V @ 200A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110ns
Current - Reverse Leakage @ Vr: 1mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Operating Temperature - Junction: -

封装: Module

库存4,672

600V

97A

2.8V @ 200A

Fast Recovery =< 500ns, > 200mA (Io)

110ns

1mA @ 600V

-

Chassis Mount

Module

-

FES16BTR

Fairchild/ON Semiconductor

DIODE GEN PURP 100V 16A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 170pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2

库存5,056

100V

16A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

170pF @ 4V, 1MHz

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

R5001610XXWA

Powerex Inc.

DIODE GEN PURP 1.6KV 100A DO205

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 30mA @ 1600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存7,072

1600V

100A

1.55V @ 470A

Standard Recovery >500ns, > 200mA (Io)

7µs

30mA @ 1600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

VS-5EWH06FNTRLHM3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.85V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存2,912

600V

5A

1.85V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

5µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-PAK (TO-252AA)

-65°C ~ 175°C

AS1PK-M3/85A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 800V 1.5A DO220

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 10.4pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存4,576

800V

1.5A (DC)

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 800V

10.4pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

S3AHM6G

TSC America Inc.

DIODE, 3A, 50V, AEC-Q101, DO-214

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5µs
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存5,616

50V

3A

1.15V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.5µs

5µA @ 50V

30pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

HT14G A1G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 300V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 300V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: T-18, Axial

库存4,512

300V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 300V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

S2J-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 1µA @ 600V
Capacitance @ Vr, F: 16pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存5,824

600V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

2µs

1µA @ 600V

16pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SD103AW-G3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 350MA 40V SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 350mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10ns
Current - Reverse Leakage @ Vr: 5µA @ 30V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123

库存4,560

40V

350mA (DC)

600mV @ 200mA

Fast Recovery =< 500ns, > 200mA (Io)

10ns

5µA @ 30V

50pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 150°C

BAV101 L0G

TSC America Inc.

DIODE, SWITCHING & ARRAY, 0.2A,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-213AC, MINI-MELF, SOD-80

库存7,824

250V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

100nA @ 200V

4pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-65°C ~ 200°C

SS320LWHRVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD123W
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123W

库存2,016

200V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

10µA @ 200V

-

Surface Mount

SOD-123W

SOD123W

-55°C ~ 150°C

MBRD320G

ON Semiconductor

DIODE SCHOTTKY 20V 3A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK-3
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存166,380

20V

3A

600mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 20V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK-3

-65°C ~ 150°C

STTH802BY-TR

STMicroelectronics

DIODE GEN PURP 200V 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 6µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,664

200V

8A

1.05V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

6µA @ 200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

-40°C ~ 175°C

MBRD5150TR

SMC Diode Solutions

DIODE SCHOTTKY 150V 5A DPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 150V
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,792

150V

5A

900mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 150V

150pF @ 5V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

DPAK

-55°C ~ 150°C

CDBURT0530LL-HF

Comchip Technology

DIODE SCHOTTKY 20V 500MA 0603

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 460mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: 30pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 0603/SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C

封装: 2-SMD, No Lead

库存76,800

20V

500mA

460mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 20V

30pF @ 1V, 1MHz

Surface Mount

2-SMD, No Lead

0603/SOD-523F

-55°C ~ 125°C

BAV103-GS18

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 250MA SOD80

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 250mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 200V
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)

封装: DO-213AC, MINI-MELF, SOD-80

库存22,206,000

200V

250mA (DC)

1V @ 100mA

Fast Recovery =< 500ns, > 200mA (Io)

50ns

100nA @ 200V

1.5pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

SOD-80 MiniMELF

175°C (Max)

VS-STPS20L15GPBF

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 20A D2PAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 410mV @ 19A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 125°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存55,308

15V

20A

410mV @ 19A

Fast Recovery =< 500ns, > 200mA (Io)

-

10mA @ 15V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 125°C

UFR7130R

Microchip Technology

DIODE GEN PURP 300V 70A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 25 µA @ 300 V
Capacitance @ Vr, F: 150pF @ 10V, 1MHz
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

300 V

70A

1.25 V @ 70 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

25 µA @ 300 V

150pF @ 10V, 1MHz

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 175°C

SURS8220T3G-IR01

onsemi

DIODE GEN PURP 200V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

2 µA @ 200 V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 175°C

JANTX1N4153UR-1-TR

Microchip Technology

DIODE GEN PURP 50V 150MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 µA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

150mA

550 mV @ 100 µA

Small Signal =< 200mA (Io), Any Speed

4 ns

-

2pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 175°C

TRS10E65H-S1Q

Toshiba Semiconductor and Storage

G3 SIC-SBD 650V 10A TO-220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 649pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: 175°C

封装: -

库存876

650 V

10A

1.35 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 650 V

649pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220-2L

175°C

S4D40120H

SMC Diode Solutions

DIODE SIC 1.2KV 128A TO247AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 128A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 40 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 30 µA @ 1200 V
Capacitance @ Vr, F: 3227pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

128A

1.8 V @ 40 A

No Recovery Time > 500mA (Io)

0 ns

30 µA @ 1200 V

3227pF @ 0V, 1MHz

Through Hole

TO-247-2

TO-247AC

-55°C ~ 175°C

SFT17GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 500V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 500 V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

500 V

1A

1.7 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 500 V

10pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

UTR40-TR

Microchip Technology

DIODE GP 400V 500MA A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350 ns
Current - Reverse Leakage @ Vr: 3 µA @ 400 V
Capacitance @ Vr, F: 60pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

500mA

1.1 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

350 ns

3 µA @ 400 V

60pF @ 0V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

V15PM103-M3-I

Vishay

15A, 100V, SMPC TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 4.5A
Voltage - Forward (Vf) (Max) @ If: 690 mV @ 15 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 380 µA @ 100 V
Capacitance @ Vr, F: 2350pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

库存19,500

100 V

4.5A

690 mV @ 15 A

Fast Recovery =< 500ns, > 200mA (Io)

-

380 µA @ 100 V

2350pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

JAN1N6662US

Microchip Technology

DIODE GEN PURP 400V A SQ-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 nA @ 400 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

400 V

-

1 V @ 400 mA

Standard Recovery >500ns, > 200mA (Io)

-

50 nA @ 400 V

-

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 175°C

UES706R

Microchip Technology

DIODE GEN PURP 400V 20A DO203AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -

封装: -

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400 V

20A

1.25 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

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