页 179 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH240200	GeneSiC Semiconductor	DIODE SCHOTTKY 200V 240A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 240A Voltage - Forward (Vf) (Max) @ If: 920mV @ 240A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存3,312	200V	240A	920mV @ 240A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 200V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
FGP20BHE3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 2µA @ 100V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AC, DO-15, Axial	库存2,016	100V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	2µA @ 100V	45pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-65°C ~ 175°C
UFS580G/TR13	Microsemi Corporation	DIODE GEN PURP 800V 5A DO215AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-215AB, SMC Gull Wing Supplier Device Package: DO-215AB Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-215AB, SMC Gull Wing	库存3,216	800V	5A	1.35V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 800V	-	Surface Mount	DO-215AB, SMC Gull Wing	DO-215AB	-55°C ~ 175°C
B390Q-13-F	Diodes Incorporated	DIODE SCHOTTKY 90V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 90V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AB, SMC	库存6,768	90V	3A	790mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 90V	100pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 125°C
SK34B M4G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 3A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AA, SMB	库存3,824	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 125°C
VSSB310-M3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 1.9A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1.9A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 100V Capacitance @ Vr, F: 230pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-214AA, SMB	库存3,328	100V	1.9A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 100V	230pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-40°C ~ 150°C
1N4937GPE-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存4,832	600V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
HER103G-TP	Micro Commercial Co	DIODE GEN PURPOSE 200V DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-204AC, DO-15, Axial	库存3,744	200V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 200V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-41	-55°C ~ 125°C
SRT12HA1G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 125°C	封装: T-18, Axial	库存6,096	20V	1A	550mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 125°C
NSRLL30XV2T1G	ON Semiconductor	DIODE SCHOTTKY 30V 200MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-79, SOD-523	库存74,400	30V	200mA (DC)	600mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	-	1µA @ 10V	-	Surface Mount	SC-79, SOD-523	SOD-523	-55°C ~ 150°C
MBRB1645-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 16A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,832	45V	16A	630mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
PMEG2010EPK,315	Nexperia USA Inc.	DIODE SCHOTTKY 20V 1A 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 415mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 600µA @ 20V Capacitance @ Vr, F: 65pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-XDFN Supplier Device Package: DFN1608D-2 Operating Temperature - Junction: 150°C (Max)	封装: 2-XDFN	库存7,840	20V	1A	415mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	4ns	600µA @ 20V	65pF @ 1V, 1MHz	Surface Mount	2-XDFN	DFN1608D-2	150°C (Max)
STPS160AY	STMicroelectronics	DIODE SCHOTTKY 60V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 670mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-214AC, SMA	库存142,800	60V	1A	670mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	4µA @ 60V	-	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-40°C ~ 150°C
EP01CV1	Sanken	DIODE GEN PURP 1KV 200MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存3,584	1000V	200mA	4V @ 200mA	Small Signal =< 200mA (Io), Any Speed	200ns	5µA @ 1000V	-	Through Hole	Axial	-	-40°C ~ 150°C
SMLJ60S05-TP	Micro Commercial Co	DIODE GEN PURP 50V 6A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存150,000	50V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	150pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
D950N22TB01XPSA1	Infineon Technologies	DIODE GEN PURP 2.2KV 1024A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2200 V Current - Average Rectified (Io): 1024A Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40 mA @ 2200 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AA, APuk Supplier Device Package: - Operating Temperature - Junction: 180°C	封装: -	Request a Quote	2200 V	1024A	1.12 V @ 650 A	Standard Recovery >500ns, > 200mA (Io)	-	40 mA @ 2200 V	-	Chassis Mount	DO-200AA, APuk	-	180°C
V30K202HM3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 200V 3.4A FLATPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3.4A Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 200 V Capacitance @ Vr, F: 1250pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: FlatPAK (5x6) Operating Temperature - Junction: -40°C ~ 165°C	封装: -	Request a Quote	200 V	3.4A	1.04 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 200 V	1250pF @ 4V, 1MHz	Surface Mount	8-PowerTDFN	FlatPAK (5x6)	-40°C ~ 165°C
VSSAF3103-M3-H	Vishay	3A, 100V, SLIM SMA TRENCH SKY RE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.1A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 170 µA @ 100 V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	100 V	2.1A	650 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	170 µA @ 100 V	450pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
LSIC2SD065A06A	Littelfuse Inc.	DIODE SIL CARB 650V 18.5A TO220L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 18.5A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 50 µA @ 650 V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存2,274	650 V	18.5A	1.8 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 650 V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C
HER603GP-TP	Micro Commercial Co	DIODE GEN PURP 200V 6A R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R-6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	6A	1.1 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 200 V	100pF @ 4V, 1MHz	Through Hole	R-6, Axial	R-6	-55°C ~ 150°C
CMR1F-06M-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 600V 1A SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	库存26,550	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
JANTX1N5711UB-TR	Microchip Technology	DIODE SCHOTTKY 50V UB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 nA @ 50 V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 4-SMD, No Lead Supplier Device Package: UB Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	-	1 V @ 15 mA	Small Signal =< 200mA (Io), Any Speed	-	200 nA @ 50 V	2pF @ 0V, 1MHz	Surface Mount	4-SMD, No Lead	UB	-65°C ~ 150°C
D121N12BXPSA1	Infineon Technologies	DIODE GEN PURP 1.2KV 230A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 230A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 mA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	封装: -	Request a Quote	1200 V	230A	-	Standard Recovery >500ns, > 200mA (Io)	-	20 mA @ 1200 V	-	Stud Mount	DO-205AA, DO-8, Stud	-	-40°C ~ 180°C
F1T5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A TS-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: T-18, Axial Supplier Device Package: TS-1 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存15,000	600 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	15pF @ 4V, 1MHz	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
JAN1N5822US-TR	Microchip Technology	DIODE SCHOTTKY 40V 3A B SQ-MELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	40 V	3A	500 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 150°C
ER3K-TPS01	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 5 µA @ 800 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 175°C	封装: -	Request a Quote	800 V	3A	1.7 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	5 µA @ 800 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-50°C ~ 175°C
ADE4D20120G	Analog Power Inc.	DIODE SIL SIC 1200V 56A TO263-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 56A Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 20 µA @ 1200 V Capacitance @ Vr, F: 12pF @ 0V, 100kHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	56A	1.85 V @ 20 A	No Recovery Time > 500mA (Io)	-	20 µA @ 1200 V	12pF @ 0V, 100kHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263-2	-55°C ~ 175°C
ES3BC-HF	Comchip Technology	DIODE GEN PURP 100V 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 100 V	40pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C

MBRH240200

GeneSiC Semiconductor

DIODE SCHOTTKY 200V 240A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 240A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 240A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存3,312

200V

240A

920mV @ 240A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 200V

-

Chassis Mount

D-67

-55°C ~ 150°C

FGP20BHE3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 2µA @ 100V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AC, DO-15, Axial

库存2,016

100V

2A

950mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

2µA @ 100V

45pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-65°C ~ 175°C

UFS580G/TR13

Microsemi Corporation

DIODE GEN PURP 800V 5A DO215AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-215AB, SMC Gull Wing
Supplier Device Package: DO-215AB
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-215AB, SMC Gull Wing

库存3,216

800V

5A

1.35V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 800V

-

Surface Mount

DO-215AB, SMC Gull Wing

DO-215AB

-55°C ~ 175°C

B390Q-13-F

Diodes Incorporated

DIODE SCHOTTKY 90V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 90V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AB, SMC

库存6,768

90V

3A

790mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 90V

100pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 125°C

SK34B M4G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AA, SMB

库存3,824

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 125°C

VSSB310-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 1.9A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1.9A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 100V
Capacitance @ Vr, F: 230pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-214AA, SMB

库存3,328

100V

1.9A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 100V

230pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-40°C ~ 150°C

1N4937GPE-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存4,832

600V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

HER103G-TP

Micro Commercial Co

DIODE GEN PURPOSE 200V DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-204AC, DO-15, Axial

库存3,744

200V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 200V

20pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-41

-55°C ~ 125°C

SRT12HA1G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 125°C

封装: T-18, Axial

库存6,096

20V

1A

550mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

T-18, Axial

TS-1

-55°C ~ 125°C

NSRLL30XV2T1G

ON Semiconductor

DIODE SCHOTTKY 30V 200MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 600mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-79, SOD-523

库存74,400

30V

200mA (DC)

600mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

-

1µA @ 10V

-

Surface Mount

SC-79, SOD-523

SOD-523

-55°C ~ 150°C

MBRB1645-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 16A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 630mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,832

45V

16A

630mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

PMEG2010EPK,315

Nexperia USA Inc.

DIODE SCHOTTKY 20V 1A 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 415mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 600µA @ 20V
Capacitance @ Vr, F: 65pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Supplier Device Package: DFN1608D-2
Operating Temperature - Junction: 150°C (Max)

封装: 2-XDFN

库存7,840

20V

1A

415mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

4ns

600µA @ 20V

65pF @ 1V, 1MHz

Surface Mount

2-XDFN

DFN1608D-2

150°C (Max)

STPS160AY

STMicroelectronics

DIODE SCHOTTKY 60V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-214AC, SMA

库存142,800

60V

1A

670mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

4µA @ 60V

-

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-40°C ~ 150°C

EP01CV1

Sanken

DIODE GEN PURP 1KV 200MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存3,584

1000V

200mA

4V @ 200mA

Small Signal =< 200mA (Io), Any Speed

200ns

5µA @ 1000V

-

Through Hole

Axial

-

-40°C ~ 150°C

SMLJ60S05-TP

Micro Commercial Co

DIODE GEN PURP 50V 6A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存150,000

50V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 50V

150pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

D950N22TB01XPSA1

Infineon Technologies

DIODE GEN PURP 2.2KV 1024A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2200 V
Current - Average Rectified (Io): 1024A
Voltage - Forward (Vf) (Max) @ If: 1.12 V @ 650 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AA, APuk
Supplier Device Package: -
Operating Temperature - Junction: 180°C

封装: -

Request a Quote

2200 V

1024A

1.12 V @ 650 A

Standard Recovery >500ns, > 200mA (Io)

-

40 mA @ 2200 V

-

Chassis Mount

DO-200AA, APuk

-

180°C

V30K202HM3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 200V 3.4A FLATPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3.4A
Voltage - Forward (Vf) (Max) @ If: 1.04 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 200 V
Capacitance @ Vr, F: 1250pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: FlatPAK (5x6)
Operating Temperature - Junction: -40°C ~ 165°C

封装: -

Request a Quote

200 V

3.4A

1.04 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 200 V

1250pF @ 4V, 1MHz

Surface Mount

8-PowerTDFN

FlatPAK (5x6)

-40°C ~ 165°C

VSSAF3103-M3-H

Vishay

3A, 100V, SLIM SMA TRENCH SKY RE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.1A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 170 µA @ 100 V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

100 V

2.1A

650 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

170 µA @ 100 V

450pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

LSIC2SD065A06A

Littelfuse Inc.

DIODE SIL CARB 650V 18.5A TO220L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 18.5A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 50 µA @ 650 V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存2,274

650 V

18.5A

1.8 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

50 µA @ 650 V

300pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C

HER603GP-TP

Micro Commercial Co

DIODE GEN PURP 200V 6A R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R-6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

6A

1.1 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 200 V

100pF @ 4V, 1MHz

Through Hole

R-6, Axial

R-6

-55°C ~ 150°C

CMR1F-06M-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 600V 1A SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

库存26,550

600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

JANTX1N5711UB-TR

Microchip Technology

DIODE SCHOTTKY 50V UB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Supplier Device Package: UB
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

50 V

-

1 V @ 15 mA

Small Signal =< 200mA (Io), Any Speed

-

200 nA @ 50 V

2pF @ 0V, 1MHz

Surface Mount

4-SMD, No Lead

UB

-65°C ~ 150°C

D121N12BXPSA1

Infineon Technologies

DIODE GEN PURP 1.2KV 230A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 230A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

封装: -

Request a Quote

1200 V

230A

-

Standard Recovery >500ns, > 200mA (Io)

-

20 mA @ 1200 V

-

Stud Mount

DO-205AA, DO-8, Stud

-

-40°C ~ 180°C

F1T5G

Taiwan Semiconductor Corporation

DIODE GEN PURP 600V 1A TS-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: T-18, Axial
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存15,000

600 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

15pF @ 4V, 1MHz

Through Hole

T-18, Axial

TS-1

-55°C ~ 150°C

JAN1N5822US-TR

Microchip Technology

DIODE SCHOTTKY 40V 3A B SQ-MELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

40 V

3A

500 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 150°C

ER3K-TPS01

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

Request a Quote

800 V

3A

1.7 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

5 µA @ 800 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-50°C ~ 175°C

ADE4D20120G

Analog Power Inc.

DIODE SIL SIC 1200V 56A TO263-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 56A
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
Capacitance @ Vr, F: 12pF @ 0V, 100kHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

56A

1.85 V @ 20 A

No Recovery Time > 500mA (Io)

-

20 µA @ 1200 V

12pF @ 0V, 100kHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263-2

-55°C ~ 175°C

ES3BC-HF

Comchip Technology

DIODE GEN PURP 100V 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 100 V

40pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C