页 1841 - 二极管 - 整流器 - 单 | 分立半导体产品 | 黑森尔电子
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二极管 - 整流器 - 单

记录 52,788
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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
RGP10JEHE3/91
Vishay Semiconductor Diodes Division

DIODE SW 1A 600V 250NS DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-204AL, DO-41, Axial
库存2,160
600V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 600V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 175°C
hot MR851
ON Semiconductor

DIODE GEN PURP 100V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AA, DO-27, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: DO-201AA, DO-27, Axial
库存28,560
100V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
10µA @ 100V
-
Through Hole
DO-201AA, DO-27, Axial
DO-201AD
-65°C ~ 125°C
R7S02208XX
Powerex Inc.

DIODE MODULE 2.2KV 800A DO200AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2200V
  • Current - Average Rectified (Io): 800A
  • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 10µs
  • Current - Reverse Leakage @ Vr: 50mA @ 2200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AA, A-PUK
  • Supplier Device Package: DO-200AA, R62
  • Operating Temperature - Junction: -
封装: DO-200AA, A-PUK
库存2,944
2200V
800A
1.8V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
10µs
50mA @ 2200V
-
Chassis Mount
DO-200AA, A-PUK
DO-200AA, R62
-
VS-T70HF100
Vishay Semiconductor Diodes Division

DIODE MODULE 1KV 70A D-55

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15mA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: D-55 T-Module
  • Supplier Device Package: D-55
  • Operating Temperature - Junction: -
封装: D-55 T-Module
库存6,208
1000V
70A
-
Standard Recovery >500ns, > 200mA (Io)
-
15mA @ 1000V
-
Chassis Mount
D-55 T-Module
D-55
-
LSM540JE3/TR13
Microsemi Corporation

DIODE SCHOTTKY 40V 5A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 520mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2mA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AB, SMC
库存2,656
40V
5A
520mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
2mA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB
-55°C ~ 150°C
V20PL60-M3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 5.5A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5.5A
  • Voltage - Forward (Vf) (Max) @ If: 590mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 4mA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存3,440
60V
5.5A
590mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
4mA @ 60V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
SF15G A0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存5,184
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
RSFDLHRFG
TSC America Inc.

DIODE, FAST, 0.5A, 200V, 150NS,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 4pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-219AB
库存4,160
200V
500mA
1.3V @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
4pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
PMEG6010ETR,115
Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOD123W

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 530mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4.4ns
  • Current - Reverse Leakage @ Vr: 60µA @ 60V
  • Capacitance @ Vr, F: 120pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: CFP3
  • Operating Temperature - Junction: 175°C (Max)
封装: SOD-123W
库存2,912
60V
1A
530mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
4.4ns
60µA @ 60V
120pF @ 1V, 1MHz
Surface Mount
SOD-123W
CFP3
175°C (Max)
BYS12-90-E3/TR3
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 90V 1.5A DO214AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AC, SMA
库存6,752
90V
1.5A
750mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 90V
-
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
1N4933-T
Diodes Incorporated

DIODE GEN PURP 50V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200ns
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存51,336
50V
1A
1.2V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
200ns
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
CMPSH-3E TR
Central Semiconductor Corp

DIODE SCHOTTKY 40V 200MA SOT23

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 7pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-236-3, SC-59, SOT-23-3
库存55,374
40V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
7pF @ 1V, 1MHz
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
-65°C ~ 150°C
CD1408-FU1400
Bourns Inc.

DIODE GEN PURP 400V 1A 1408

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Chip, Concave Terminals
  • Supplier Device Package: 1408
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: Chip, Concave Terminals
库存199,494
400V
1A
1.05V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
Chip, Concave Terminals
1408
-65°C ~ 175°C
1N4136
Microchip Technology

DIODE GEN PURP 200V 70A DO5

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 70A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-5 (DO-203AB)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
Request a Quote
200 V
70A
1.25 V @ 200 A
Standard Recovery >500ns, > 200mA (Io)
-
25 µA @ 200 V
-
Stud Mount
DO-203AB, DO-5, Stud
DO-5 (DO-203AB)
-65°C ~ 200°C
ES2CAH
Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 150 V
  • Capacitance @ Vr, F: 25pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
150 V
2A
950 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 150 V
25pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SBT250-10JS
onsemi

RECTIFIER DIODE, SCHOTTKY

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
UFA15M_R2_00001
Panjit International Inc.

DIODE GEN PURP 1KV 1.5A SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
  • Capacitance @ Vr, F: 10.7pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
1000 V
1.5A
1.7 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
100 ns
1 µA @ 1000 V
10.7pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
APT10SCE65B
Microsemi Corporation

DIODE SCHOTTKY 650V 10A TO247

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
US1004FL_R1_00001
Panjit International Inc.

DIODE GEN PURP 400V 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存26,640
400 V
1A
1.4 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
1 µA @ 400 V
9pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
SE20DLJHM3-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 3.9A TO263AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3.9A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 330 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 160pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
  • Supplier Device Package: TO-263AC (SMPD)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存12,000
600 V
3.9A
1 V @ 20 A
Fast Recovery =< 500ns, > 200mA (Io)
330 ns
5 µA @ 600 V
160pF @ 4V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), Variant
TO-263AC (SMPD)
-55°C ~ 175°C
GP10GE-167E3-93
Vishay General Semiconductor - Diodes Division

RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
V5N22-M3-H
Vishay

5A, 200V, DFN3820A TMBS RECT.

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 1.8A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: 285pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
200 V
1.8A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
285pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
GC9704-150A
Microchip Technology

DIODE SCHOTTKY 5V 10MA CHIP

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 5 V
  • Current - Average Rectified (Io): 10mA
  • Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 nA @ 1 V
  • Capacitance @ Vr, F: 0.8pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Chip
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
5 V
10mA
600 mV @ 1 mA
Small Signal =< 200mA (Io), Any Speed
-
100 nA @ 1 V
0.8pF @ 0V, 1MHz
Surface Mount
Die
Chip
-55°C ~ 150°C
JANKCA1N4148
Microchip Technology

DIODE GEN PURP 75V 200MA UB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75 V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5 ns
  • Current - Reverse Leakage @ Vr: 500 nA @ 75 V
  • Capacitance @ Vr, F: 4pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
75 V
200mA
1 V @ 10 mA
Small Signal =< 200mA (Io), Any Speed
5 ns
500 nA @ 75 V
4pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
FFSH5065A-F155
onsemi

DIODE SIL CARB 650V 60A TO247-3

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 650 V
  • Capacitance @ Vr, F: 2530pF @ 1V, 100kHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存285
650 V
60A
-
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 650 V
2530pF @ 1V, 100kHz
Through Hole
TO-247-3
TO-247-3
-55°C ~ 175°C
V2FM15-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 2A DO219AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.46 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存22,647
150 V
2A
1.46 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 150 V
90pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-40°C ~ 175°C
PG606R_R2_00001
Panjit International Inc.

DIODE GEN PURP 600V 6A P600

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 600 V
  • Capacitance @ Vr, F: 300pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P600
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
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600 V
6A
1.3 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
250 ns
1 µA @ 600 V
300pF @ 4V, 1MHz
Through Hole
P600, Axial
P600
-50°C ~ 150°C
SRAF5100
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 5A ITO220AC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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100 V
5A
850 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 100 V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C