页 883 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
VS-8EWS10STRRPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 8A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存6,976	1000V	8A	1.1V @ 8A	Standard Recovery >500ns, > 200mA (Io)	-	50µA @ 1000V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252	-55°C ~ 150°C
SBH15-03-TR-E	ON Semiconductor	DIODE SCHOTTKY 1.5A 30V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,400	-	-	-	-	-	-	-	-	-	-	-
IRD3901R	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 20A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 350ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存5,504	200V	20A	1.65V @ 62.8A	Fast Recovery =< 500ns, > 200mA (Io)	350ns	50µA @ 200V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 125°C
LLSD101B-7	Diodes Incorporated	DIODE SCHOTTKY 50V 15MA MINIMELF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15mA (DC) Voltage - Forward (Vf) (Max) @ If: 950mV @ 15A Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1ns Current - Reverse Leakage @ Vr: 200nA @ 40V Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AC, MINI-MELF, SOD-80 Supplier Device Package: Mini MELF Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-213AC, MINI-MELF, SOD-80	库存6,752	50V	15mA (DC)	950mV @ 15A	Small Signal =< 200mA (Io), Any Speed	1ns	200nA @ 40V	2.1pF @ 0V, 1MHz	Surface Mount	DO-213AC, MINI-MELF, SOD-80	Mini MELF	-55°C ~ 125°C
SRAF840HC0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 125°C	封装: TO-220-2 Full Pack	库存7,872	40V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
MBRS1690 MNG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 16A, Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,304	90V	16A	850mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 90V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
NTS10100EMFST1G	ON Semiconductor	DIODE SCHOTTKY 100V 10A 5DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Supplier Device Package: 5-DFN (5x6) (8-SOFL) Operating Temperature - Junction: -55°C ~ 175°C	封装: 8-PowerTDFN, 5 Leads	库存6,976	100V	10A	720mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 100V	-	Surface Mount	8-PowerTDFN, 5 Leads	5-DFN (5x6) (8-SOFL)	-55°C ~ 175°C
SF43GHR0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 150V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 150V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存4,656	150V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RD0306T-TL-H	ON Semiconductor	DIODE GEN PURP 600V 3A TPFA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: TP-FA Operating Temperature - Junction: 150°C (Max)	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,488	600V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 600V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TP-FA	150°C (Max)
DB2U30900L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 100MA USSMINI Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1.3ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 3pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-923 Supplier Device Package: USSMINI2-F2-B Operating Temperature - Junction: 125°C (Max)	封装: SOD-923	库存6,576	30V	100mA	580mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	1.3ns	2µA @ 30V	3pF @ 10V, 1MHz	Surface Mount	SOD-923	USSMINI2-F2-B	125°C (Max)
GF1B-E3/5CA	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214BA Supplier Device Package: DO-214BA (GF1) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214BA	库存6,832	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 100V	-	Surface Mount	DO-214BA	DO-214BA (GF1)	-65°C ~ 175°C
GP10GE-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,840	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	3µs	5µA @ 400V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RMPG06K-E3/73	Vishay Semiconductor Diodes Division	DIODE GPP 1A 800V 250NS MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	封装: MPG06, Axial	库存5,920	800V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 800V	6.6pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
CGRMT4005-HF	Comchip Technology	DIODE GEN PURP 600V 1A SOD123H Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123H Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123H	库存4,560	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123H	-55°C ~ 150°C
UF4005 R0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 600V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存7,632	600V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
STPS1045DEE-TR	STMicroelectronics	DIODE SCHOTTKY 45V 10A POWERFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 590mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PowerFlat? (3.3x3.3) Operating Temperature - Junction: 175°C (Max)	封装: 8-PowerTDFN	库存19,200	45V	10A	590mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 45V	-	Surface Mount	8-PowerTDFN	PowerFlat? (3.3x3.3)	175°C (Max)
LFUSCD08065A	Littelfuse Inc.	DIODE SIC SCHOTTKY 650V 8A TO220 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 230µA @ 650V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: TO-220-2	库存14,916	650V	8A (DC)	1.7V @ 8A	No Recovery Time > 500mA (Io)	0ns	230µA @ 650V	260pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
NXPSC08650D6J	WeEn Semiconductors	DIODE SIL CARBIDE 650V 8A DPAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 230 µA @ 650 V Capacitance @ Vr, F: 260pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max)	封装: -	库存21,552	650 V	8A	1.7 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	230 µA @ 650 V	260pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	DPAK	175°C (Max)
JANTXV1N6940UTK3	Microchip Technology	DIODE SCHOTTKY 15V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 15 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	15 V	150A	500 mV @ 150 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 15 V	-	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
CD3A30	Microchip Technology	DIODE SCHOTTKY 30V 3A DIE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	30 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 30 V	-	Surface Mount	Die	Die	-65°C ~ 125°C
R5000-AP	Micro Commercial Co	DIODE GEN PURP 5KV 200MA DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 5000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 5000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	5000 V	200mA	5 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 5000 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
HER301G-AP	Micro Commercial Co	DIODE GEN PURP 50V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 50 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 50 V	80pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
VS-STPS20L15GR-M3	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 15V 20A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 mA @ 15 V Capacitance @ Vr, F: 2000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	15 V	20A	520 mV @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	-	10 mA @ 15 V	2000pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 125°C
RB751VM-40FHTE-17	Rohm Semiconductor	DIODE SCHOTTKY 30V 30MA UMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 30mA Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 nA @ 30 V Capacitance @ Vr, F: 2pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SC-90, SOD-323F Supplier Device Package: UMD2 Operating Temperature - Junction: 150°C (Max)	封装: -	库存59,325	30 V	30mA	370 mV @ 1 mA	Small Signal =< 200mA (Io), Any Speed	-	500 nA @ 30 V	2pF @ 1V, 1MHz	Surface Mount	SC-90, SOD-323F	UMD2	150°C (Max)
BAS16-13-F	Diodes Incorporated	DIODE GEN PURP 75V 200MA SOT23-3 Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
NRVTS860PFST3G	onsemi	DIODE SCHOTTKY 60V 8A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 70 µA @ 60 V Capacitance @ Vr, F: 870pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存43,200	60 V	8A	640 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	70 µA @ 60 V	870pF @ 1V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-55°C ~ 175°C
SB60-05J	onsemi	RECTIFIER DIODE, SCHOTTKY, 1 PHA Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SR010H	Taiwan Semiconductor Corporation	DIODE SCHOTT 100V 500MA DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	500mA	850 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	65pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C

VS-8EWS10STRRPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 8A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存6,976

1000V

8A

1.1V @ 8A

Standard Recovery >500ns, > 200mA (Io)

-

50µA @ 1000V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TO-252

-55°C ~ 150°C

SBH15-03-TR-E

ON Semiconductor

DIODE SCHOTTKY 1.5A 30V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,400

-

IRD3901R

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 20A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.65V @ 62.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 350ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存5,504

200V

20A

1.65V @ 62.8A

Fast Recovery =< 500ns, > 200mA (Io)

350ns

50µA @ 200V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 125°C

LLSD101B-7

Diodes Incorporated

DIODE SCHOTTKY 50V 15MA MINIMELF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15mA (DC)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 15A
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1ns
Current - Reverse Leakage @ Vr: 200nA @ 40V
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-213AC, MINI-MELF, SOD-80

库存6,752

50V

15mA (DC)

950mV @ 15A

Small Signal =< 200mA (Io), Any Speed

1ns

200nA @ 40V

2.1pF @ 0V, 1MHz

Surface Mount

DO-213AC, MINI-MELF, SOD-80

Mini MELF

-55°C ~ 125°C

SRAF840HC0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

封装: TO-220-2 Full Pack

库存7,872

40V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 125°C

MBRS1690 MNG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,304

90V

16A

850mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 90V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

NTS10100EMFST1G

ON Semiconductor

DIODE SCHOTTKY 100V 10A 5DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 720mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Operating Temperature - Junction: -55°C ~ 175°C

封装: 8-PowerTDFN, 5 Leads

库存6,976

100V

10A

720mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 100V

-

Surface Mount

8-PowerTDFN, 5 Leads

5-DFN (5x6) (8-SOFL)

-55°C ~ 175°C

SF43GHR0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 150V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 150V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存4,656

150V

4A

1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 150V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

RD0306T-TL-H

ON Semiconductor

DIODE GEN PURP 600V 3A TPFA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TP-FA
Operating Temperature - Junction: 150°C (Max)

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,488

600V

3A

1.5V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 600V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

TP-FA

150°C (Max)

DB2U30900L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA USSMINI

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 100mA
Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.3ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 3pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-923
Supplier Device Package: USSMINI2-F2-B
Operating Temperature - Junction: 125°C (Max)

封装: SOD-923

库存6,576

30V

100mA

580mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

1.3ns

2µA @ 30V

3pF @ 10V, 1MHz

Surface Mount

SOD-923

USSMINI2-F2-B

125°C (Max)

GF1B-E3/5CA

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214BA
Supplier Device Package: DO-214BA (GF1)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214BA

库存6,832

100V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 100V

-

Surface Mount

DO-214BA

DO-214BA (GF1)

-65°C ~ 175°C

GP10GE-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,840

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

3µs

5µA @ 400V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

RMPG06K-E3/73

Vishay Semiconductor Diodes Division

DIODE GPP 1A 800V 250NS MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

封装: MPG06, Axial

库存5,920

800V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 800V

6.6pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

CGRMT4005-HF

Comchip Technology

DIODE GEN PURP 600V 1A SOD123H

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123H

库存4,560

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Surface Mount

SOD-123H

-55°C ~ 150°C

UF4005 R0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 600V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存7,632

600V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 600V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

STPS1045DEE-TR

STMicroelectronics

DIODE SCHOTTKY 45V 10A POWERFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 590mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PowerFlat? (3.3x3.3)
Operating Temperature - Junction: 175°C (Max)

封装: 8-PowerTDFN

库存19,200

45V

10A

590mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 45V

-

Surface Mount

8-PowerTDFN

PowerFlat? (3.3x3.3)

175°C (Max)

LFUSCD08065A

Littelfuse Inc.

DIODE SIC SCHOTTKY 650V 8A TO220

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 230µA @ 650V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: TO-220-2

库存14,916

650V

8A (DC)

1.7V @ 8A

No Recovery Time > 500mA (Io)

0ns

230µA @ 650V

260pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

NXPSC08650D6J

WeEn Semiconductors

DIODE SIL CARBIDE 650V 8A DPAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 230 µA @ 650 V
Capacitance @ Vr, F: 260pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: DPAK
Operating Temperature - Junction: 175°C (Max)

封装: -

库存21,552

650 V

8A

1.7 V @ 8 A

No Recovery Time > 500mA (Io)

0 ns

230 µA @ 650 V

260pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

DPAK

175°C (Max)

JANTXV1N6940UTK3

Microchip Technology

DIODE SCHOTTKY 15V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 150 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 15 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

15 V

150A

500 mV @ 150 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 15 V

-

Surface Mount

ThinKey™3

-65°C ~ 150°C

CD3A30

Microchip Technology

DIODE SCHOTTKY 30V 3A DIE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

30 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 30 V

-

Surface Mount

Die

-65°C ~ 125°C

R5000-AP

Micro Commercial Co

DIODE GEN PURP 5KV 200MA DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 5000 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 5000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

5000 V

200mA

5 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 5000 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

HER301G-AP

Micro Commercial Co

DIODE GEN PURP 50V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 50 V

80pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

VS-STPS20L15GR-M3

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 15V 20A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 40 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 mA @ 15 V
Capacitance @ Vr, F: 2000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

15 V

20A

520 mV @ 40 A

Fast Recovery =< 500ns, > 200mA (Io)

-

10 mA @ 15 V

2000pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 125°C

RB751VM-40FHTE-17

Rohm Semiconductor

DIODE SCHOTTKY 30V 30MA UMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 30mA
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Capacitance @ Vr, F: 2pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-90, SOD-323F
Supplier Device Package: UMD2
Operating Temperature - Junction: 150°C (Max)

封装: -

库存59,325

30 V

30mA

370 mV @ 1 mA

Small Signal =< 200mA (Io), Any Speed

-

500 nA @ 30 V

2pF @ 1V, 1MHz

Surface Mount

SC-90, SOD-323F

UMD2

150°C (Max)

BAS16-13-F

Diodes Incorporated

DIODE GEN PURP 75V 200MA SOT23-3

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

NRVTS860PFST3G

onsemi

DIODE SCHOTTKY 60V 8A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 70 µA @ 60 V
Capacitance @ Vr, F: 870pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存43,200

60 V

8A

640 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

70 µA @ 60 V

870pF @ 1V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-55°C ~ 175°C

SB60-05J

onsemi

RECTIFIER DIODE, SCHOTTKY, 1 PHA

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

SR010H

Taiwan Semiconductor Corporation

DIODE SCHOTT 100V 500MA DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

500mA

850 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

65pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C