页 48 - 晶体管 - 双极 (BJT) - 阵列 - 预偏置 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN49A1(T5L,F,T)	Toshiba Semiconductor and Storage	TRANS NPN/PNP PREBIAS 0.2W US6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存3,104	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
BCR133SH6433XTMA1	Infineon Technologies	TRANS 2NPN PREBIAS 0.25W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): - Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	封装: 6-VSSOP, SC-88, SOT-363	库存6,496	100mA	50V	10k	10k	30 @ 5mA, 5V	300mV @ 500µA, 10mA	-	130MHz	250mW	Surface Mount	6-VSSOP, SC-88, SOT-363	PG-SOT363-6
EMF8T2R	Rohm Semiconductor	TRANS NPN PREBIAS/NPN 0.15W EMT6 Transistor Type: 1 NPN Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 320MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: SOT-563, SOT-666	库存7,776	100mA, 500mA	50V, 12V	47k	47k	68 @ 5mA, 5V / 270 @ 10mA, 2V	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA	500nA	250MHz, 320MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
PUMD18,115	Nexperia USA Inc.	TRANS PREBIAS NPN/PNP 6TSSOP Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存2,688	100mA	50V	4.7k	10k	50 @ 10mA, 5V	100mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
PEMD2,315	Nexperia USA Inc.	TRANS PREBIAS NPN/PNP SOT666 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-666	封装: SOT-563, SOT-666	库存4,128	100mA	50V	22k	22k	60 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	SOT-563, SOT-666	SOT-666
NSBC114TDP6T5G	ON Semiconductor	TRANS 2NPN PREBIAS 0.339W SOT963 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 339mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: SOT-963	库存4,208	100mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	339mW	Surface Mount	SOT-963	SOT-963
ACX124EUQ-13R	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k, 22k Resistor - Emitter Base (R2) (Ohms): 22k, 22k DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: 250MHz Power - Max: 270mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存7,728	100mA	50V	22k, 22k	22k, 22k	-	-	-	250MHz	270mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
RN1961(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.2W US6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存7,568	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
DMC964070R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SSMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMini6-F3-B	封装: SOT-563, SOT-666	库存3,264	100mA	50V	22k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-563, SOT-666	SSMini6-F3-B
DMG963020R	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SSMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-665 Supplier Device Package: SSMini5-F4-B	封装: SOT-665	库存3,104	100mA	50V	22k	22k	60 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	125mW	Surface Mount	SOT-665	SSMini5-F4-B
DMG214010R	Panasonic Electronic Components	TRANS PNP PREBIAS/NPN 0.3W MINI6 Transistor Type: 1 PNP Pre-Biased, 1 NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 210 @ 2mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 500nA, 100µA Frequency - Transition: 150MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	封装: SOT-23-6	库存2,976	100mA	50V	-	4.7k	20 @ 5mA, 10V / 210 @ 2mA, 10V	250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA	500nA, 100µA	150MHz	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
DMA561050R	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-SMD, Flat Leads Supplier Device Package: SMini5-F3-B	封装: 5-SMD, Flat Leads	库存3,088	100mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	5-SMD, Flat Leads	SMini5-F3-B
DMC266040R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN MINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	封装: SOT-23-6	库存5,664	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
RN2903,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存52,122	100mA	50V	22k	22k	70 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
RN2911,LF	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: 6-TSSOP, SC-88, SOT-363	库存98,616	100mA	50V	10k	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
SMUN5237DW1T1G	ON Semiconductor	TRANS 2NPN PREBIAS 0.187W SOT363 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 22k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 187mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存86,580	100mA	50V	47k	22k	80 @ 5mA, 10V	250mV @ 5mA, 10mA	500nA	-	187mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
PBLS2002D,115	Nexperia USA Inc.	TRANS NPN PREBIAS/PNP 0.6W 6TSOP Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 1A Voltage - Collector Emitter Breakdown (Max): 50V, 20V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A Current - Collector Cutoff (Max): 1µA, 100nA Frequency - Transition: 185MHz Power - Max: 600mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: 6-TSOP	封装: SC-74, SOT-457	库存28,140	100mA, 1A	50V, 20V	4.7k	4.7k	30 @ 10mA, 5V / 220 @ 500mA, 2V	150mV @ 500µA, 10mA / 280mV @ 100mA, 1A	1µA, 100nA	185MHz	600mW	Surface Mount	SC-74, SOT-457	6-TSOP
DMC564000R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: SMini6-F3-B	封装: 6-SMD, Flat Leads	库存53,580	100mA	50V	47k	-	160 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	6-SMD, Flat Leads	SMini6-F3-B
DMC2640L0R	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN MINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	封装: SOT-23-6	库存28,278	100mA	50V	4.7k	4.7k	20 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
EMG8T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-SMD (5 Leads), Flat Lead Supplier Device Package: EMT5	封装: 6-SMD (5 Leads), Flat Lead	库存1,251,060	100mA	50V	4.7k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	150mW	Surface Mount	6-SMD (5 Leads), Flat Lead	EMT5
PIMP31PAX	Nexperia USA Inc.	PIMP31PA/SOT1118/HUSON6 Transistor Type: 2 PNP Pre-Biased (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1kOhms Resistor - Emitter Base (R2) (Ohms): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 360mW Mounting Type: Surface Mount Package / Case: 6-UFDFN Exposed Pad Supplier Device Package: 6-HUSON (2x2)	封装: -	库存9,000	500mA	50V	1kOhms	10kOhms	70 @ 50mA, 5V	100mV @ 2.5mA, 50mA	500nA	150MHz	360mW	Surface Mount	6-UFDFN Exposed Pad	6-HUSON (2x2)
DDA143TUQ-13-F	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 T&R 10 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	100mA	50V	4.7kOhms	-	160 @ 1mA, 5V	300mV @ 250µA, 2.5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
PUMH9-QH	Nexperia USA Inc.	TRANS PREBIAS 2NPN 50V 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: -	Request a Quote	100mA	50V	10kOhms	47kOhms	100 @ 5mA, 5V	100mV @ 250µA, 5mA	100nA	230MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN1708JE-TE85L-F	Toshiba Semiconductor and Storage	NPN X 2 BRT Q1BSR=22KOHM Q1BER=4 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-553 Supplier Device Package: ESV	封装: -	库存270	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	100mW	Surface Mount	SOT-553	ESV
RN2705-LF	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: -	库存7,896	100mA	50V	2.2kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
PUMB2-DG-B4X	Nexperia USA Inc.	TRANS PREBIAS 2PNP 50V 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 180MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: -	Request a Quote	100mA	50V	47kOhms	47kOhms	80 @ 5mA, 5V	150mV @ 500µA, 10mA	1µA	180MHz	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN4908-LF-CT	Toshiba Semiconductor and Storage	PNP + NPN BRT Q1BSR10KOHM Q1BER4 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz, 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	封装: -	库存9,000	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	200MHz, 250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	US6
PUMD13-QF	Nexperia USA Inc.	PUMD13-Q/SOT363/SC-88 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: 230MHz, 180MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: -	Request a Quote	100mA	50V	4.7kOhms	47kOhms	100 @ 10mA, 5V	100mV @ 250µA, 5mA	1µA	230MHz, 180MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP

RN49A1(T5L,F,T)

Toshiba Semiconductor and Storage

TRANS NPN/PNP PREBIAS 0.2W US6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存3,104

100mA

50V

2.2k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

BCR133SH6433XTMA1

Infineon Technologies

TRANS 2NPN PREBIAS 0.25W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): -
Frequency - Transition: 130MHz
Power - Max: 250mW
Mounting Type: Surface Mount
Package / Case: 6-VSSOP, SC-88, SOT-363
Supplier Device Package: PG-SOT363-6

封装: 6-VSSOP, SC-88, SOT-363

库存6,496

100mA

50V

10k

30 @ 5mA, 5V

300mV @ 500µA, 10mA

-

130MHz

250mW

Surface Mount

6-VSSOP, SC-88, SOT-363

PG-SOT363-6

EMF8T2R

Rohm Semiconductor

TRANS NPN PREBIAS/NPN 0.15W EMT6

Transistor Type: 1 NPN Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 320MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: SOT-563, SOT-666

库存7,776

100mA, 500mA

50V, 12V

47k

68 @ 5mA, 5V / 270 @ 10mA, 2V

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

500nA

250MHz, 320MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

PUMD18,115

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP 6TSSOP

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存2,688

100mA

50V

4.7k

10k

50 @ 10mA, 5V

100mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

PEMD2,315

Nexperia USA Inc.

TRANS PREBIAS NPN/PNP SOT666

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-666

封装: SOT-563, SOT-666

库存4,128

100mA

50V

22k

60 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

SOT-563, SOT-666

SOT-666

NSBC114TDP6T5G

ON Semiconductor

TRANS 2NPN PREBIAS 0.339W SOT963

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 339mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: SOT-963

库存4,208

100mA

50V

10k

-

160 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

339mW

Surface Mount

SOT-963

ACX124EUQ-13R

Diodes Incorporated

PREBIAS TRANSISTOR SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k, 22k
Resistor - Emitter Base (R2) (Ohms): 22k, 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: 250MHz
Power - Max: 270mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存7,728

100mA

50V

22k, 22k

-

250MHz

270mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

RN1961(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.2W US6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存7,568

100mA

50V

4.7k

30 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

DMC964070R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SSMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMini6-F3-B

封装: SOT-563, SOT-666

库存3,264

100mA

50V

22k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-563, SOT-666

SSMini6-F3-B

DMG963020R

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SSMINI5

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-665
Supplier Device Package: SSMini5-F4-B

封装: SOT-665

库存3,104

100mA

50V

22k

60 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

125mW

Surface Mount

SOT-665

SSMini5-F4-B

DMG214010R

Panasonic Electronic Components

TRANS PNP PREBIAS/NPN 0.3W MINI6

Transistor Type: 1 PNP Pre-Biased, 1 NPN
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V / 210 @ 2mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 500nA, 100µA
Frequency - Transition: 150MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

封装: SOT-23-6

库存2,976

100mA

50V

-

4.7k

20 @ 5mA, 10V / 210 @ 2mA, 10V

250mV @ 500µA, 10mA / 300mV @ 10mA, 100mA

500nA, 100µA

150MHz

300mW

Surface Mount

SOT-23-6

Mini6-G4-B

DMA561050R

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B

封装: 5-SMD, Flat Leads

库存3,088

100mA

50V

10k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

5-SMD, Flat Leads

SMini5-F3-B

DMC266040R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN MINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

封装: SOT-23-6

库存5,664

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

300mW

Surface Mount

SOT-23-6

Mini6-G4-B

RN2903,LF

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存52,122

100mA

50V

22k

70 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

RN2911,LF

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: 6-TSSOP, SC-88, SOT-363

库存98,616

100mA

50V

10k

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

SMUN5237DW1T1G

ON Semiconductor

TRANS 2NPN PREBIAS 0.187W SOT363

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 22k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 187mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存86,580

100mA

50V

47k

22k

80 @ 5mA, 10V

250mV @ 5mA, 10mA

500nA

-

187mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

PBLS2002D,115

Nexperia USA Inc.

TRANS NPN PREBIAS/PNP 0.6W 6TSOP

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 1A
Voltage - Collector Emitter Breakdown (Max): 50V, 20V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V / 220 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
Current - Collector Cutoff (Max): 1µA, 100nA
Frequency - Transition: 185MHz
Power - Max: 600mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: 6-TSOP

封装: SC-74, SOT-457

库存28,140

100mA, 1A

50V, 20V

4.7k

30 @ 10mA, 5V / 220 @ 500mA, 2V

150mV @ 500µA, 10mA / 280mV @ 100mA, 1A

1µA, 100nA

185MHz

600mW

Surface Mount

SC-74, SOT-457

6-TSOP

DMC564000R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD, Flat Leads
Supplier Device Package: SMini6-F3-B

封装: 6-SMD, Flat Leads

库存53,580

100mA

50V

47k

-

160 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

6-SMD, Flat Leads

SMini6-F3-B

DMC2640L0R

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN MINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

封装: SOT-23-6

库存28,278

100mA

50V

4.7k

20 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

300mW

Surface Mount

SOT-23-6

Mini6-G4-B

EMG8T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT5

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-SMD (5 Leads), Flat Lead
Supplier Device Package: EMT5

封装: 6-SMD (5 Leads), Flat Lead

库存1,251,060

100mA

50V

4.7k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

150mW

Surface Mount

6-SMD (5 Leads), Flat Lead

EMT5

PIMP31PAX

Nexperia USA Inc.

PIMP31PA/SOT1118/HUSON6

Transistor Type: 2 PNP Pre-Biased (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1kOhms
Resistor - Emitter Base (R2) (Ohms): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 360mW
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Supplier Device Package: 6-HUSON (2x2)

封装: -

库存9,000

500mA

50V

1kOhms

10kOhms

70 @ 50mA, 5V

100mV @ 2.5mA, 50mA

500nA

150MHz

360mW

Surface Mount

6-UFDFN Exposed Pad

6-HUSON (2x2)

DDA143TUQ-13-F

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 2.5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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100mA

50V

4.7kOhms

-

160 @ 1mA, 5V

300mV @ 250µA, 2.5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

PUMH9-QH

Nexperia USA Inc.

TRANS PREBIAS 2NPN 50V 6TSSOP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 230MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: -

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100mA

50V

10kOhms

47kOhms

100 @ 5mA, 5V

100mV @ 250µA, 5mA

100nA

230MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN1708JE-TE85L-F

Toshiba Semiconductor and Storage

NPN X 2 BRT Q1BSR=22KOHM Q1BER=4

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-553
Supplier Device Package: ESV

封装: -

库存270

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

100mW

Surface Mount

SOT-553

ESV

RN2705-LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR2.2KOHM Q1BER47KO

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: -

库存7,896

100mA

50V

2.2kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

PUMB2-DG-B4X

Nexperia USA Inc.

TRANS PREBIAS 2PNP 50V 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 180MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: -

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100mA

50V

47kOhms

80 @ 5mA, 5V

150mV @ 500µA, 10mA

1µA

180MHz

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN4908-LF-CT

Toshiba Semiconductor and Storage

PNP + NPN BRT Q1BSR10KOHM Q1BER4

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 200MHz, 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6

封装: -

库存9,000

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

200MHz, 250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

US6

PUMD13-QF

Nexperia USA Inc.

PUMD13-Q/SOT363/SC-88

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: -

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100mA

50V

4.7kOhms

47kOhms

100 @ 10mA, 5V

100mV @ 250µA, 5mA

1µA

230MHz, 180MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP