页 63 - 晶体管 - 双极 (BJT) - 阵列 - 预偏置 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1) (Ohms)	Resistor - Emitter Base (R2) (Ohms)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
RN2961FE(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.1W ES6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: SOT-563, SOT-666	库存7,744	100mA	50V	4.7k	4.7k	30 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
NSBC143ZPDXV6T5G	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存6,752	100mA	50V	4.7k	47k	80 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
NSBC114YPDXV6T1	ON Semiconductor	TRANS PREBIAS NPN/PNP SOT563 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 500mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SOT-563	封装: SOT-563, SOT-666	库存391,680	100mA	50V	10k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	500mW	Surface Mount	SOT-563, SOT-666	SOT-563
UP0411M00L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SSMINI6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMINI6-F1	封装: SOT-563, SOT-666	库存6,736	100mA	50V	2.2k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	125mW	Surface Mount	SOT-563, SOT-666	SSMINI6-F1
XP0111500L	Panasonic Electronic Components	TRANS PREBIAS DUAL PNP SMINI5 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 80MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: SMini5-G1	封装: 5-TSSOP, SC-70-5, SOT-353	库存4,176	100mA	50V	10k	-	160 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	80MHz	150mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	SMini5-G1
IMD14T108	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.3W SMT6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 220 Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SMT6	封装: SC-74, SOT-457	库存17,904	500mA	50V	220	10k	82 @ 100mA, 5V	300mV @ 5mA, 100mA	500nA	250MHz	300mW	Surface Mount	SC-74, SOT-457	SMT6
UMF4NTR	Rohm Semiconductor	TRANS NPN PREBIAS/PNP 0.15W UMT6 Transistor Type: 1 NPN Pre-Biased, 1 PNP Current - Collector (Ic) (Max): 100mA, 500mA Voltage - Collector Emitter Breakdown (Max): 50V, 12V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 260MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封装: 6-TSSOP, SC-88, SOT-363	库存3,216,000	100mA, 500mA	50V, 12V	2.2k	2.2k	20 @ 20mA, 5V / 270 @ 10mA, 2V	300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA	500nA	250MHz, 260MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
NSBC115TPDP6T5G	ON Semiconductor	TRANS NPN/PNP PREBIAS SOT963 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 100k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 339mW Mounting Type: Surface Mount Package / Case: SOT-963 Supplier Device Package: SOT-963	封装: SOT-963	库存3,344	100mA	50V	100k	-	160 @ 5mA, 10V	250mV @ 1mA, 10mA	500nA	-	339mW	Surface Mount	SOT-963	SOT-963
FMG5AT148	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.3W SMT5 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMT5	封装: SC-74A, SOT-753	库存180,408	100mA	50V	10k	47k	68 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	300mW	Surface Mount	SC-74A, SOT-753	SMT5
SMUN5313DW1T3G	ON Semiconductor	TRANS NPN/PNP PREBIAS SOT363 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 187mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: 6-TSSOP, SC-88, SOT-363	库存5,792	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	-	187mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
DMC561030R	Panasonic Electronic Components	TRANS 2NPN PREBIAS 0.15W SMINI5 Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-SMD, Flat Leads Supplier Device Package: SMini5-F3-B	封装: 5-SMD, Flat Leads	库存5,088	100mA	50V	47k	47k	80 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	5-SMD, Flat Leads	SMini5-F3-B
PUMB14,115	Nexperia USA Inc.	TRANS 2PNP PREBIAS 0.3W 6TSSOP Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存6,320	100mA	50V	47k	-	100 @ 1mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN2967(TE85L,F)	Toshiba Semiconductor and Storage	TRANS 2PNP PREBIAS 0.2W US6 Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: US6	封装: SC-101, SOT-883	库存26,088	100mA	50V	10k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	SC-101, SOT-883	US6
UP0421100L	Panasonic Electronic Components	TRANS PREBIAS DUAL NPN SSMINI6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 150MHz Power - Max: 125mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SSMINI6-F1	封装: SOT-563, SOT-666	库存5,117,604	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 300µA, 10mA	500nA	150MHz	125mW	Surface Mount	SOT-563, SOT-666	SSMINI6-F1
DMG563H10R	Panasonic Electronic Components	TRANS PREBIAS NPN/PNP SMINI5 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k, 4.7k Resistor - Emitter Base (R2) (Ohms): 47k, 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 5-SMD, Flat Leads Supplier Device Package: SMini5-F3-B	封装: 5-SMD, Flat Leads	库存7,600	100mA	50V	47k, 4.7k	47k, 10k	80 @ 5mA, 10V / 30 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	150mW	Surface Mount	5-SMD, Flat Leads	SMini5-F3-B
EMH75T2R	Rohm Semiconductor	TRANS 2NPN PREBIAS 0.15W EMT6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: SOT-563, SOT-666	库存3,760	100mA	50V	4.7k	47k	80 @ 5mA, 10V	150mV @ 500µA, 5mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
RN1605TE85LF	Toshiba Semiconductor and Storage	TRANS 2NPN PREBIAS 0.3W SM6 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	封装: SC-74, SOT-457	库存26,016	100mA	50V	2.2k	47k	80 @ 10mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	300mW	Surface Mount	SC-74, SOT-457	SM6
PUMH20,115	Nexperia USA Inc.	TRANS 2NPN PREBIAS 0.3W 6TSSOP Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 2.2k DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 1µA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: 6-TSSOP, SC-88, SOT-363	库存28,272	100mA	50V	2.2k	2.2k	30 @ 20mA, 5V	150mV @ 500µA, 10mA	1µA	-	300mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
DMG264010R	Panasonic Electronic Components	TRANS NPN/PNP PREBIAS 0.3W MINI6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10k Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: - Power - Max: 300mW Mounting Type: Surface Mount Package / Case: SOT-23-6 Supplier Device Package: Mini6-G4-B	封装: SOT-23-6	库存47,274	100mA	50V	10k	10k	35 @ 5mA, 10V	250mV @ 500µA, 10mA	500nA	-	300mW	Surface Mount	SOT-23-6	Mini6-G4-B
UMD12NTR	Rohm Semiconductor	TRANS NPN/PNP PREBIAS 0.15W UMT6 Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: UMT6	封装: 6-TSSOP, SC-88, SOT-363	库存6,674,424	100mA	50V	47k	47k	68 @ 5mA, 5V	300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	6-TSSOP, SC-88, SOT-363	UMT6
RN2710-LF	Toshiba Semiconductor and Storage	PNPX2 BRT Q1BSR47KOHM Q1BER22KOH Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: -	库存18,000	100mA	50V	4.7kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	200MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
EMD38T2R	Rohm Semiconductor	PNP+NPN DIGITAL TRANSISTOR (WITH Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms, 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: EMT6	封装: -	库存48,000	100mA	50V	1kOhms	47kOhms, 10kOhms	68 @ 5mA, 5V	300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA	500nA	250MHz	150mW	Surface Mount	SOT-563, SOT-666	EMT6
RN4988FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q TR NPN+PNP Q1BSR=22KO Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 22kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存24,000	100mA	50V	22kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz, 200MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
PUMD6H-QX	Nexperia USA Inc.	PUMD6H-QX Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 4.7kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA Frequency - Transition: 230MHz, 180MHz Power - Max: 240mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: 6-TSSOP	封装: -	Request a Quote	100mA	50V	4.7kOhms	-	200 @ 1mA, 5V	100mV @ 500µA, 10mA	100nA	230MHz, 180MHz	240mW	Surface Mount	6-TSSOP, SC-88, SOT-363	6-TSSOP
RN1704-LF	Toshiba Semiconductor and Storage	NPNX2 BRT Q1BSR47KOHM Q1BER47KOH Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	封装: -	库存630	100mA	50V	47kOhms	47kOhms	80 @ 10mA, 5V	300mV @ 250µA, 5mA	500nA	250MHz	200mW	Surface Mount	5-TSSOP, SC-70-5, SOT-353	USV
RN1911FE-LXHF-CT	Toshiba Semiconductor and Storage	AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	封装: -	库存23,940	100mA	50V	10kOhms	-	120 @ 1mA, 5V	300mV @ 250µA, 5mA	100nA (ICBO)	250MHz	100mW	Surface Mount	SOT-563, SOT-666	ES6
DDC114YUQ-13-F	Diodes Incorporated	PREBIAS TRANSISTOR SOT363 T&R 10 Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 10kOhms Resistor - Emitter Base (R2) (Ohms): 47kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA Current - Collector Cutoff (Max): 500nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	Request a Quote	100mA	50V	10kOhms	47kOhms	80 @ 5mA, 5V	300mV @ 250µA, 5mA	500nA (ICBO)	250MHz	200mW	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
CPH5514-TL-E	onsemi	PNP+PNP 0.1A 50V BIAS R Transistor Type: - Current - Collector (Ic) (Max): - Voltage - Collector Emitter Breakdown (Max): - Resistor - Base (R1) (Ohms): - Resistor - Emitter Base (R2) (Ohms): - DC Current Gain (hFE) (Min) @ Ic, Vce: - Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): - Frequency - Transition: - Power - Max: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

RN2961FE(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.1W ES6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: SOT-563, SOT-666

库存7,744

100mA

50V

4.7k

30 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

NSBC143ZPDXV6T5G

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存6,752

100mA

50V

4.7k

47k

80 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

NSBC114YPDXV6T1

ON Semiconductor

TRANS PREBIAS NPN/PNP SOT563

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 500mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SOT-563

封装: SOT-563, SOT-666

库存391,680

100mA

50V

10k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

500mW

Surface Mount

SOT-563, SOT-666

SOT-563

UP0411M00L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SSMINI6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1

封装: SOT-563, SOT-666

库存6,736

100mA

50V

2.2k

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

125mW

Surface Mount

SOT-563, SOT-666

SSMINI6-F1

XP0111500L

Panasonic Electronic Components

TRANS PREBIAS DUAL PNP SMINI5

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 80MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: SMini5-G1

封装: 5-TSSOP, SC-70-5, SOT-353

库存4,176

100mA

50V

10k

-

160 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

80MHz

150mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

SMini5-G1

IMD14T108

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.3W SMT6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 220
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 82 @ 100mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SMT6

封装: SC-74, SOT-457

库存17,904

500mA

50V

220

10k

82 @ 100mA, 5V

300mV @ 5mA, 100mA

500nA

250MHz

300mW

Surface Mount

SC-74, SOT-457

SMT6

UMF4NTR

Rohm Semiconductor

TRANS NPN PREBIAS/PNP 0.15W UMT6

Transistor Type: 1 NPN Pre-Biased, 1 PNP
Current - Collector (Ic) (Max): 100mA, 500mA
Voltage - Collector Emitter Breakdown (Max): 50V, 12V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V / 270 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 260MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封装: 6-TSSOP, SC-88, SOT-363

库存3,216,000

100mA, 500mA

50V, 12V

2.2k

20 @ 20mA, 5V / 270 @ 10mA, 2V

300mV @ 500µA, 10mA / 250mV @ 10mA, 200mA

500nA

250MHz, 260MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

NSBC115TPDP6T5G

ON Semiconductor

TRANS NPN/PNP PREBIAS SOT963

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 100k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 339mW
Mounting Type: Surface Mount
Package / Case: SOT-963
Supplier Device Package: SOT-963

封装: SOT-963

库存3,344

100mA

50V

100k

-

160 @ 5mA, 10V

250mV @ 1mA, 10mA

500nA

-

339mW

Surface Mount

SOT-963

FMG5AT148

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.3W SMT5

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SMT5

封装: SC-74A, SOT-753

库存180,408

100mA

50V

10k

47k

68 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

300mW

Surface Mount

SC-74A, SOT-753

SMT5

SMUN5313DW1T3G

ON Semiconductor

TRANS NPN/PNP PREBIAS SOT363

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 187mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: 6-TSSOP, SC-88, SOT-363

库存5,792

100mA

50V

47k

80 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

-

187mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

DMC561030R

Panasonic Electronic Components

TRANS 2NPN PREBIAS 0.15W SMINI5

Transistor Type: 2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B

封装: 5-SMD, Flat Leads

库存5,088

100mA

50V

47k

80 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

5-SMD, Flat Leads

SMini5-F3-B

PUMB14,115

Nexperia USA Inc.

TRANS 2PNP PREBIAS 0.3W 6TSSOP

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存6,320

100mA

50V

47k

-

100 @ 1mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN2967(TE85L,F)

Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W US6

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Supplier Device Package: US6

封装: SC-101, SOT-883

库存26,088

100mA

50V

10k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

SC-101, SOT-883

US6

UP0421100L

Panasonic Electronic Components

TRANS PREBIAS DUAL NPN SSMINI6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1

封装: SOT-563, SOT-666

库存5,117,604

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 300µA, 10mA

500nA

150MHz

125mW

Surface Mount

SOT-563, SOT-666

SSMINI6-F1

DMG563H10R

Panasonic Electronic Components

TRANS PREBIAS NPN/PNP SMINI5

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k, 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k, 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 30 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 5-SMD, Flat Leads
Supplier Device Package: SMini5-F3-B

封装: 5-SMD, Flat Leads

库存7,600

100mA

50V

47k, 4.7k

47k, 10k

80 @ 5mA, 10V / 30 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

150mW

Surface Mount

5-SMD, Flat Leads

SMini5-F3-B

EMH75T2R

Rohm Semiconductor

TRANS 2NPN PREBIAS 0.15W EMT6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: SOT-563, SOT-666

库存3,760

100mA

50V

4.7k

47k

80 @ 5mA, 10V

150mV @ 500µA, 5mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

RN1605TE85LF

Toshiba Semiconductor and Storage

TRANS 2NPN PREBIAS 0.3W SM6

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Supplier Device Package: SM6

封装: SC-74, SOT-457

库存26,016

100mA

50V

2.2k

47k

80 @ 10mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

300mW

Surface Mount

SC-74, SOT-457

SM6

PUMH20,115

Nexperia USA Inc.

TRANS 2NPN PREBIAS 0.3W 6TSSOP

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 2.2k
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 5V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: 6-TSSOP, SC-88, SOT-363

库存28,272

100mA

50V

2.2k

30 @ 20mA, 5V

150mV @ 500µA, 10mA

1µA

-

300mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

DMG264010R

Panasonic Electronic Components

TRANS NPN/PNP PREBIAS 0.3W MINI6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: -
Power - Max: 300mW
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: Mini6-G4-B

封装: SOT-23-6

库存47,274

100mA

50V

10k

35 @ 5mA, 10V

250mV @ 500µA, 10mA

500nA

-

300mW

Surface Mount

SOT-23-6

Mini6-G4-B

UMD12NTR

Rohm Semiconductor

TRANS NPN/PNP PREBIAS 0.15W UMT6

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: UMT6

封装: 6-TSSOP, SC-88, SOT-363

库存6,674,424

100mA

50V

47k

68 @ 5mA, 5V

300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

6-TSSOP, SC-88, SOT-363

UMT6

RN2710-LF

Toshiba Semiconductor and Storage

PNPX2 BRT Q1BSR47KOHM Q1BER22KOH

Transistor Type: 2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: -

库存18,000

100mA

50V

4.7kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

200MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

EMD38T2R

Rohm Semiconductor

PNP+NPN DIGITAL TRANSISTOR (WITH

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 1kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms, 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 150mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: EMT6

封装: -

库存48,000

100mA

50V

1kOhms

47kOhms, 10kOhms

68 @ 5mA, 5V

300mV @ 250µA, 5mA / 300mV @ 500µA, 10mA

500nA

250MHz

150mW

Surface Mount

SOT-563, SOT-666

EMT6

RN4988FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q TR NPN+PNP Q1BSR=22KO

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 22kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存24,000

100mA

50V

22kOhms

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz, 200MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

PUMD6H-QX

Nexperia USA Inc.

PUMD6H-QX

Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 4.7kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 100mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
Frequency - Transition: 230MHz, 180MHz
Power - Max: 240mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: 6-TSSOP

封装: -

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100mA

50V

4.7kOhms

-

200 @ 1mA, 5V

100mV @ 500µA, 10mA

100nA

230MHz, 180MHz

240mW

Surface Mount

6-TSSOP, SC-88, SOT-363

6-TSSOP

RN1704-LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR47KOHM Q1BER47KOH

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Supplier Device Package: USV

封装: -

库存630

100mA

50V

47kOhms

80 @ 10mA, 5V

300mV @ 250µA, 5mA

500nA

250MHz

200mW

Surface Mount

5-TSSOP, SC-70-5, SOT-353

USV

RN1911FE-LXHF-CT

Toshiba Semiconductor and Storage

AUTO AEC-Q NPN X 2 Q1BSR=10K, Q2

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 100mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: ES6

封装: -

库存23,940

100mA

50V

10kOhms

-

120 @ 1mA, 5V

300mV @ 250µA, 5mA

100nA (ICBO)

250MHz

100mW

Surface Mount

SOT-563, SOT-666

ES6

DDC114YUQ-13-F

Diodes Incorporated

PREBIAS TRANSISTOR SOT363 T&R 10

Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 10kOhms
Resistor - Emitter Base (R2) (Ohms): 47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA (ICBO)
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

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100mA

50V

10kOhms

47kOhms

80 @ 5mA, 5V

300mV @ 250µA, 5mA

500nA (ICBO)

250MHz

200mW

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

CPH5514-TL-E

onsemi

PNP+PNP 0.1A 50V BIAS R

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Resistor - Base (R1) (Ohms): -
Resistor - Emitter Base (R2) (Ohms): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
Frequency - Transition: -
Power - Max: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-