页 14 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品 | 黑森尔电子
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晶体管 - 双极 (BJT) - 射频

记录 1,633
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零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR92WH6327XTSA1
Infineon Technologies

TRANS RF NPN 15V 45MA SOT323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 11.5dB ~ 17dB
  • Power - Max: 280mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 45mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存3,680
15V
5GHz
1.4dB ~ 2dB @ 900MHz ~ 1.8GHz
11.5dB ~ 17dB
280mW
70 @ 15mA, 8V
45mA
-
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BFP460E6433HTMA1
Infineon Technologies

TRANS RF NPN 4.5V 50MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.8V
  • Frequency - Transition: 22GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
  • Gain: 12.5dB ~ 26.5dB
  • Power - Max: 230mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 3V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存7,056
5.8V
22GHz
0.7dB ~ 1.2dB @ 100MHz ~ 3GHz
12.5dB ~ 26.5dB
230mW
90 @ 20mA, 3V
70mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP620E7764BTSA1
Infineon Technologies

TRANSISTOR RF NPN 2.3V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 65GHz
  • Noise Figure (dB Typ @ f): 0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
  • Gain: 21.5dB
  • Power - Max: 185mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 50mA, 1.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存3,792
2.8V
65GHz
0.7dB ~ 1.3dB @ 1.8GHz ~ 6GHz
21.5dB
185mW
110 @ 50mA, 1.5V
80mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP 540F E6327
Infineon Technologies

TRANSISTOR RF NPN 4.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 30GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.4dB @ 1.8GHz
  • Gain: 20dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 3.5V
  • Current - Collector (Ic) (Max): 80mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封装: 4-SMD, Flat Leads
库存4,464
5V
30GHz
0.9dB ~ 1.4dB @ 1.8GHz
20dB
250mW
50 @ 20mA, 3.5V
80mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
BFS 360L6 E6327
Infineon Technologies

TRANSISTOR NPN 6V 35MA TSLP-6

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 9V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
  • Gain: 10dB ~ 14.5dB
  • Power - Max: 210mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-XFDFN
  • Supplier Device Package: PG-TSLP-6
封装: 6-XFDFN
库存6,640
9V
14GHz
1dB ~ 1.5dB @ 1.8GHz ~ 3GHz
10dB ~ 14.5dB
210mW
60 @ 15mA, 3V
35mA
150°C (TJ)
Surface Mount
6-XFDFN
PG-TSLP-6
BFP520E6327BTSA1
Infineon Technologies

TRANS NPN RF 2.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 24dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存7,232
3.5V
45GHz
0.95dB @ 1.8GHz
24dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP405E6327BTSA1
Infineon Technologies

TRANS NPN RF 4.5V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存4,048
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
MRF553GT
Microsemi Corporation

TRANS NPN 16V 500MA POWERMACRO

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 175MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 11.5dB
  • Power - Max: 3W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Power Macro
  • Supplier Device Package: Power Macro
封装: Power Macro
库存5,952
16V
175MHz
-
11.5dB
3W
30 @ 250mA, 5V
500mA
-
Surface Mount
Power Macro
Power Macro
2SA1977-T1B-A
CEL

RF TRANSISTOR PNP SOT-23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存4,048
12V
8.5GHz
1.5dB @ 1GHz
12dB
200mW
20 @ 20mA, 8V
50mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
RX1214B300Y,114
Ampleon USA Inc.

TRANSISTOR RF LBAND SOT439A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 570W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 21A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-439A
  • Supplier Device Package: CDFM2
封装: SOT-439A
库存6,992
60V
1.4GHz
-
8dB
570W
-
21A
200°C (TJ)
Surface Mount
SOT-439A
CDFM2
BLS3135-20,114
NXP

TRANSISTOR RF POWER SOT422A

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 80W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
  • Current - Collector (Ic) (Max): 2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-422A
  • Supplier Device Package: CDFM2
封装: SOT-422A
库存4,912
75V
3.5GHz
-
8dB
80W
40 @ 1.5A, 5V
2A
200°C (TJ)
Surface Mount
SOT-422A
CDFM2
NE68530-A
CEL

TRANSISTOR NPN 2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.5dB @ 2GHz
  • Gain: 7dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封装: SC-70, SOT-323
库存7,712
6V
12GHz
1.5dB ~ 2.5dB @ 2GHz
7dB
150mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
NE68118-A
CEL

RF TRANSISTOR NPN SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 14dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存7,648
10V
9GHz
1.2dB @ 1GHz
14dB
150mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
hot KSC2756RMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 850MHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
  • Gain: 15dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封装: TO-236-3, SC-59, SOT-23-3
库存1,476,000
20V
850MHz
6.5dB @ 200MHz
15dB ~ 23dB
150mW
60 @ 5mA, 10V
30mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BFP405H6740XTSA1
Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 25GHz
  • Noise Figure (dB Typ @ f): 1.25dB @ 1.8GHz
  • Gain: 23dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存7,600
5V
25GHz
1.25dB @ 1.8GHz
23dB
75mW
60 @ 5mA, 4V
25mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
MS2209
Microsemi Corporation

TRANS RF BIPO 220W 7A M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 225MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 220W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
  • Current - Collector (Ic) (Max): 7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
封装: M218
库存5,776
65V
225MHz
-
8.4dB
220W
20 @ 2A, 5V
7A
200°C (TJ)
Chassis Mount
M218
M218
hot 2N2857
Fairchild/Micross Components

DIE RF TRANS NPN 15V

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存20,976
-
-
-
-
-
-
-
-
-
-
-
BFS17NQTA
Diodes Incorporated

TRANSISTOR RF NPN SOT23-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 11V
  • Frequency - Transition: 3.2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 310mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存5,792
11V
3.2GHz
-
-
310mW
56 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
AT-30533-BLKG
Broadcom Limited

TRANS NPN BIPO 5.5V 8MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 11dB ~ 13dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 8mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存6,944
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
11dB ~ 13dB
100mW
70 @ 1mA, 2.7V
8mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
hot 2SC5227A-4-TB-E
ON Semiconductor

TRANS NPN BIPO VHF-UHF CP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1GHz
  • Gain: 12dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 70mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-CP
封装: TO-236-3, SC-59, SOT-23-3
库存4,592
10V
7GHz
1dB @ 1GHz
12dB
200mW
90 @ 20mA, 5V
70mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-CP
BFU910FX
NXP

TRANS NPN WIDEBAND DFP4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 13.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
封装: SOT-343F
库存3,344
9.5V
-
-
13.5dB
300mW
-
15mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
BFU590GX
NXP

TRANS RF NPN 12V 200MA SOT223-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 80mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存68,220
12V
8.5GHz
-
8dB
2W
60 @ 80mA, 8V
200mA
-40°C ~ 150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
2SC5890FS-TL-E
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 7.8GHz
  • Noise Figure (dB Typ @ f): 1dB @ 900MHz
  • Gain: 12dB
  • Power - Max: 700mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V
  • Current - Collector (Ic) (Max): 75mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: 3-MPAK
封装: -
Request a Quote
12V
7.8GHz
1dB @ 900MHz
12dB
700mW
100 @ 20mA, 5V
75mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
3-MPAK
MPSH81-TRE
Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: -
Request a Quote
20V
600MHz
-
-
-
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SC6024-TL-E
onsemi

BIP NPN 35MA 3.5V FT=14G

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 14GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 2GHz
  • Gain: 9dB ~ 10.5dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 15mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: 3-SSFP
封装: -
Request a Quote
3.5V
14GHz
1.2dB @ 2GHz
9dB ~ 10.5dB
120mW
80 @ 15mA, 3V
35mA
-
Surface Mount
3-SMD, Flat Lead
3-SSFP
MS2244
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
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2N3866-PBFREE
Central Semiconductor Corp

RF TRANS NPN 30V 500MHZ TO39

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 400mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package: TO-39
封装: -
Request a Quote
30V
500MHz
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5W
10 @ 50mA, 5V
400mA
-65°C ~ 200°C (TJ)
Through Hole
TO-205AD, TO-39-3 Metal Can
TO-39
2SC4094-A
CEL

RF TRANS NPN 10V 9GHZ SOT143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 17dB ~ 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: -
封装: -
Request a Quote
10V
9GHz
1.2dB @ 1GHz
17dB ~ 23dB
200mW
50 @ 20mA, 8V
65mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
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MPSH10-BP
Micro Commercial Co

TRANSISTOR TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 4mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: -
Request a Quote
25V
650MHz
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350mW
60 @ 4mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
2SD438F-MP-AE
onsemi

2SD438 - BIPOLAR NPN TRANSISTOR,

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
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