晶体管 - FET,MOSFET - 阵列 | 分立半导体产品 | 黑森尔电子
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晶体管 - FET,MOSFET - 阵列

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描述
封装
库存
数量
FET Feature
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Power - Max
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
hot IRF7756TR
Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8-TSSOP

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.3A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
  • Vgs(th) (Max) @ Id: 900mV @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
  • Power - Max: 1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存189,432
Logic Level Gate
12V
4.3A
40 mOhm @ 4.3A, 4.5V
900mV @ 250µA
18nC @ 4.5V
1400pF @ 10V
1W
-55°C ~ 150°C (TJ)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
QJD1210011
Powerex Inc.

MOSFET 2N-CH 1200V 100A SIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 100A, 20V
  • Vgs(th) (Max) @ Id: 5V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 500nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 10200pF @ 800V
  • Power - Max: 900W
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: Module
封装: Module
库存5,200
Standard
1200V (1.2kV)
100A
25 mOhm @ 100A, 20V
5V @ 10mA
500nC @ 20V
10200pF @ 800V
900W
-40°C ~ 175°C (TJ)
Chassis Mount
Module
Module
SMMA511DJ-T1-GE3
Vishay Siliconix

MOSFET N/P-CH 12V 4.5A SC70-6L

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.2A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
  • Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
  • Power - Max: 6.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: PowerPAK? SC-70-6 Dual
  • Supplier Device Package: PowerPAK? SC-70-6 Dual
封装: PowerPAK? SC-70-6 Dual
库存7,712
Logic Level Gate
12V
4.5A
40 mOhm @ 4.2A, 4.5V
1V @ 250µA
12nC @ 8V
400pF @ 6V
6.5W
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SC-70-6 Dual
PowerPAK? SC-70-6 Dual
hot SI5975DC-T1-E3
Vishay Siliconix

MOSFET 2P-CH 12V 3.1A CHIPFET

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 12V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A
  • Rds On (Max) @ Id, Vgs: 86 mOhm @ 3.1A, 4.5V
  • Vgs(th) (Max) @ Id: 450mV @ 1mA (Min)
  • Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SMD, Flat Lead
  • Supplier Device Package: 1206-8 ChipFET?
封装: 8-SMD, Flat Lead
库存44,400
Logic Level Gate
12V
3.1A
86 mOhm @ 3.1A, 4.5V
450mV @ 1mA (Min)
9nC @ 4.5V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SMD, Flat Lead
1206-8 ChipFET?
hot SI4814BDY-T1-E3
Vishay Siliconix

MOSFET 2N-CH 30V 10A 8SOIC

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 10.5A
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 3.3W, 3.5W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存123,552
Logic Level Gate
30V
10A, 10.5A
18 mOhm @ 10A, 10V
3V @ 250µA
10nC @ 4.5V
-
3.3W, 3.5W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot SI4973DY-T1-E3
Vishay Siliconix

MOSFET 2P-CH 30V 5.8A 8-SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 5.8A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 7.6A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: 1.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存569,688
Logic Level Gate
30V
5.8A
23 mOhm @ 7.6A, 10V
3V @ 250µA
56nC @ 10V
-
1.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
APTC60VDAM45T1G
Microsemi Corporation

MOSFET 2N-CH 600V 49A SP1

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Super Junction
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 49A
  • Rds On (Max) @ Id, Vgs: 45 mOhm @ 24.5A, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 3mA
  • Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
  • Power - Max: 250W
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: SP1
  • Supplier Device Package: SP1
封装: SP1
库存3,568
Super Junction
600V
49A
45 mOhm @ 24.5A, 10V
3.9V @ 3mA
150nC @ 10V
7200pF @ 25V
250W
-40°C ~ 150°C (TJ)
Chassis Mount
SP1
SP1
AON6926
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 11A/12A 8DFN

  • FET Type: 2 N-Channel (Half Bridge)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 11A, 12A
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 1.9W, 2.1W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: 8-DFN (5x6)
封装: 8-PowerVDFN
库存2,496
Logic Level Gate
30V
11A, 12A
11 mOhm @ 20A, 10V
2.5V @ 250µA
24nC @ 10V
1380pF @ 15V
1.9W, 2.1W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
8-DFN (5x6)
hot IRF9358TRPBF
Infineon Technologies

MOSFET 2P-CH 30V 9.2A 8SOIC

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 9.2A
  • Rds On (Max) @ Id, Vgs: 16.3 mOhm @ 9.2A, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 25V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,000
Logic Level Gate
30V
9.2A
16.3 mOhm @ 9.2A, 10V
2.4V @ 25µA
38nC @ 10V
1740pF @ 25V
2W
-55°C ~ 150°C (TJ)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
hot NTJD4152PT1G
ON Semiconductor

MOSFET 2P-CH 20V 0.88A SOT-363

  • FET Type: 2 P-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 880mA
  • Rds On (Max) @ Id, Vgs: 260 mOhm @ 880mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 155pF @ 20V
  • Power - Max: 272mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SC-88/SC70-6/SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存1,730,580
Logic Level Gate
20V
880mA
260 mOhm @ 880mA, 4.5V
1.2V @ 250µA
2.2nC @ 4.5V
155pF @ 20V
272mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SC-88/SC70-6/SOT-363
DMG6301UDW-7
Diodes Incorporated

MOSFET 2N-CH 25V 0.24A SOT363

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 240mA
  • Rds On (Max) @ Id, Vgs: 4 Ohm @ 400mA, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.36nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 27.9pF @ 10V
  • Power - Max: 300mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存3,088
Standard
25V
240mA
4 Ohm @ 400mA, 4.5V
1.5V @ 250µA
0.36nC @ 4.5V
27.9pF @ 10V
300mW
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
CMLDM3757 TR
Central Semiconductor Corp

MOSFET N/P-CH 20V SOT563

  • FET Type: N and P-Channel
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 540mA, 430mA
  • Rds On (Max) @ Id, Vgs: 550 mOhm @ 540mA, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
  • Power - Max: 350mW
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-563, SOT-666
  • Supplier Device Package: SOT-563
封装: SOT-563, SOT-666
库存25,146
Logic Level Gate
20V
540mA, 430mA
550 mOhm @ 540mA, 4.5V
1V @ 250µA
1.58nC @ 4.5V
150pF @ 16V
350mW
-65°C ~ 150°C (TJ)
Surface Mount
SOT-563, SOT-666
SOT-563
AON6816
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 17A DFN5X6

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A
  • Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 16A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1540pF @ 15V
  • Power - Max: 2.8W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (5x6)
封装: 8-PowerSMD, Flat Leads
库存27,648
Logic Level Gate
30V
17A
6.2 mOhm @ 16A, 10V
2.2V @ 250µA
45nC @ 10V
1540pF @ 15V
2.8W
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
DMG8601UFG-7
Diodes Incorporated

MOSFET 2N-CH 20V 6.1A DFN

  • FET Type: 2 N-Channel (Dual) Common Drain
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 6.1A
  • Rds On (Max) @ Id, Vgs: 23 mOhm @ 6.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.05V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 8.8nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 920mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerUDFN
  • Supplier Device Package: U-DFN3030-8
封装: 8-PowerUDFN
库存27,360
Logic Level Gate
20V
6.1A
23 mOhm @ 6.5A, 4.5V
1.05V @ 250µA
8.8nC @ 4.5V
143pF @ 10V
920mW
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerUDFN
U-DFN3030-8
DMT4015LDV-13
Diodes Incorporated

MOSFET 2N-CH 40V 7.8A PWRDI3333

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 21.2A (Tc)
  • Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 15.7nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 808pF @ 30V
  • Power - Max: 1.1W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerDI3333-8 (Type UXC)
封装: -
Request a Quote
-
40V
7.8A (Ta), 21.2A (Tc)
20mOhm @ 8A, 10V
2.5V @ 250µA
15.7nC @ 10V
808pF @ 30V
1.1W (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerVDFN
PowerDI3333-8 (Type UXC)
TSM300NB06LDCR-RLG
Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 5A/24A 8PDFNU

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 24A (Tc)
  • Rds On (Max) @ Id, Vgs: 30mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 30V
  • Power - Max: 2W (Ta), 40W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: 8-PDFNU (5x6)
封装: -
库存15,000
Logic Level Gate
60V
5A (Ta), 24A (Tc)
30mOhm @ 5A, 10V
2.5V @ 250µA
17nC @ 10V
966pF @ 30V
2W (Ta), 40W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerTDFN
8-PDFNU (5x6)
IAUC45N04S6N070HATMA1
Infineon Technologies

MOSFET 2N-CH 40V 45A 8TDSON

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tj)
  • Rds On (Max) @ Id, Vgs: 7mOhm @ 22A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 9µA
  • Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 701pF @ 25V
  • Power - Max: 41W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PG-TDSON-8-57
封装: -
库存60,237
-
40V
45A (Tj)
7mOhm @ 22A, 10V
3V @ 9µA
12nC @ 10V
701pF @ 25V
41W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
8-PowerVDFN
PG-TDSON-8-57
MSCSM70DUM07T3AG
Microchip Technology

SIC 2N-CH 700V 353A SP3F

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 700V
  • Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
  • Rds On (Max) @ Id, Vgs: 6.4mOhm @ 120A, 20V
  • Vgs(th) (Max) @ Id: 2.4V @ 12mA
  • Gate Charge (Qg) (Max) @ Vgs: 645nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 13500pF @ 700V
  • Power - Max: 988W (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: SP3F
封装: -
Request a Quote
-
700V
353A (Tc)
6.4mOhm @ 120A, 20V
2.4V @ 12mA
645nC @ 20V
13500pF @ 700V
988W (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
SP3F
AONY36302
Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 30V 20A/51A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 51A (Tc), 30A (Ta), 85A (Tc)
  • Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 15V
  • Power - Max: 3.1W (Ta), 21W (Tc), 3.1W (Ta), 44.5W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerSMD, Flat Leads
  • Supplier Device Package: 8-DFN (5x6)
封装: -
Request a Quote
-
30V
20A (Ta), 51A (Tc), 30A (Ta), 85A (Tc)
5.2mOhm @ 20A, 10V
2.2V @ 250µA
30nC @ 10V
1000pF @ 15V
3.1W (Ta), 21W (Tc), 3.1W (Ta), 44.5W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
8-PowerSMD, Flat Leads
8-DFN (5x6)
F411MR12W2M1B76BOMA1
Infineon Technologies

SIC 4N-CH 1200V AG-EASY1B-2

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tj)
  • Rds On (Max) @ Id, Vgs: 11.3mOhm @ 100A, 15V
  • Vgs(th) (Max) @ Id: 5.55V @ 40mA
  • Gate Charge (Qg) (Max) @ Vgs: 248nC @ 15V
  • Input Capacitance (Ciss) (Max) @ Vds: 7360pF @ 800V
  • Power - Max: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: AG-EASY1B-2
封装: -
Request a Quote
-
1200V (1.2kV)
100A (Tj)
11.3mOhm @ 100A, 15V
5.55V @ 40mA
248nC @ 15V
7360pF @ 800V
-
-40°C ~ 150°C (TJ)
Chassis Mount
Module
AG-EASY1B-2
BUK9MGP-55PTS-518
Nexperia USA Inc.

MOSFET 2N-CH 55V 16.9A 20SO

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 16.9A (Tc), 9.16A (Tc)
  • Rds On (Max) @ Id, Vgs: 9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V
  • Vgs(th) (Max) @ Id: 2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 54nC @ 5V, 23nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5178pF @ 25V, 2315pF @ 25V
  • Power - Max: 5.2W (Tc), 3.9W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 20-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 20-SO
封装: -
Request a Quote
Logic Level Gate
55V
16.9A (Tc), 9.16A (Tc)
9mOhm @ 10A, 10V, 22.6mOhm @ 5A, 10V
2V @ 1mA
54nC @ 5V, 23nC @ 5V
5178pF @ 25V, 2315pF @ 25V
5.2W (Tc), 3.9W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
20-SOIC (0.295", 7.50mm Width)
20-SO
FDU6670AS
Fairchild Semiconductor

MOSFET N-CH 30V

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
VEC2303-TL-E
onsemi

PCH+PCH 1.8V DRIVE SERIES

  • FET Type: -
  • FET Feature: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Rds On (Max) @ Id, Vgs: -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
MSCSM120AM027T6AG
Microchip Technology

SIC 2N-CH 1200V 733A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 733A (Tc)
  • Rds On (Max) @ Id, Vgs: 3.5mOhm @ 360A, 20V
  • Vgs(th) (Max) @ Id: 2.8V @ 27mA
  • Gate Charge (Qg) (Max) @ Vgs: 2088nC @ 20V
  • Input Capacitance (Ciss) (Max) @ Vds: 27000pF @ 1000V
  • Power - Max: 2.97kW (Tc)
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: Module
  • Supplier Device Package: -
封装: -
Request a Quote
-
1200V (1.2kV)
733A (Tc)
3.5mOhm @ 360A, 20V
2.8V @ 27mA
2088nC @ 20V
27000pF @ 1000V
2.97kW (Tc)
-40°C ~ 175°C (TJ)
Chassis Mount
Module
-
NVMJD010N10MCLTWG
onsemi

PTNG 100V N-CH LL IN LFPAK56 DUA

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
  • Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
  • Vgs(th) (Max) @ Id: 3V @ 97µA
  • Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
  • Power - Max: 3.1W (Ta), 84W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-1205, 8-LFPAK56
  • Supplier Device Package: 8-LFPAK
封装: -
Request a Quote
-
100V
11.8A (Ta), 62A (Tc)
10mOhm @ 17A, 10V
3V @ 97µA
26.4nC @ 10V
1795pF @ 50V
3.1W (Ta), 84W (Tc)
-55°C ~ 175°C (TJ)
Surface Mount
SOT-1205, 8-LFPAK56
8-LFPAK
MCACD20N10Y-TP
Micro Commercial Co

MOSFET 2N-CH 100V 20A 8DFN

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 20A
  • Rds On (Max) @ Id, Vgs: 22mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1051pF @ 50V
  • Power - Max: 17W
  • Operating Temperature: -55°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: DFN5060-8D
封装: -
Request a Quote
-
100V
20A
22mOhm @ 15A, 10V
2.5V @ 250µA
16nC @ 10V
1051pF @ 50V
17W
-55°C ~ 150°C
Surface Mount
8-PowerVDFN
DFN5060-8D
FS13MR12W2M1HB70BPSA1
Infineon Technologies

SIC 6N-CH 1200V 62.5A

  • FET Type: Silicon Carbide (SiC)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 1200V (1.2kV)
  • Current - Continuous Drain (Id) @ 25°C: 62.5A (Tc)
  • Rds On (Max) @ Id, Vgs: 11.7mOhm @ 62.5A, 18V
  • Vgs(th) (Max) @ Id: 5.15V @ 28mA
  • Gate Charge (Qg) (Max) @ Vgs: 200nC @ 18V
  • Input Capacitance (Ciss) (Max) @ Vds: 6050pF @ 800V
  • Power - Max: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存36
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1200V (1.2kV)
62.5A (Tc)
11.7mOhm @ 62.5A, 18V
5.15V @ 28mA
200nC @ 18V
6050pF @ 800V
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-
-
-
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PJT7800_R1_00001
Panjit International Inc.

MOSFET 2N-CH 20V 1A SOT363

  • FET Type: MOSFET (Metal Oxide)
  • FET Feature: -
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
  • Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
  • Power - Max: 350mW (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: -
库存47,775
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20V
1A (Ta)
150mOhm @ 1A, 4.5V
1V @ 250µA
1.6nC @ 4.5V
92pF @ 10V
350mW (Ta)
-55°C ~ 150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363